• Journal of the Korean Chemical Society
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• 제30권1호
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• pp.33-39
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• 1986

The x-values of nonstoichiometry chemical formulas, Sm$O_{1.5+x}$ and Zr$O_{2+x}$, have been measured in temperature range from 500$^{\circ}$C to 1000$^{\circ}$C under oxygen pressure of 2 ${\times}10^{-1}$ to 1 ${\times}10^{-5}$ atm by gravimetric method. The enthalpies of formation of defect in samarium sesquioxide and zirconium dioxide decrease with decreasing oxygen pressure and are all positive. The 1/n values calculated from the slopes of the plots of log x vs. log $PO_2$ increase with temperature and are positive values which mean the higher oxygen pressure dependence at higher temperature. From x-values and thermodynamic data, it is found out that the nonstoichiometric defect is fully ionized metal vacancy. The conduction mechanisms of the systems are also discussed with respect to the nonstoichiometric compositions.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2001년도 창립10주년 제20회 학술발표회
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• pp.204-204
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• 2001

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.331-331
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• 2012

In this study, we investigated morphology observation of nanostructured Ti-25Ta-xZr alloys. Ti-25Ta-(3wt%~15 wt%) Zr alloys were prepared by a vacuum arc-melting furnace. Formation of nanotubular structure was achieved by an electrochemical method in 1M $H_3PO_4$ electrolytes containing 0.8%wt.% NaF. Nanotube morphology depended on alloying elements.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.384-384
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• 2010

Zirconium oxynitride films were obtained by r.f. reactive magnetron sputtering of a zirconium target with nitrogen flow rate ranging from 0 to 60 sccm. The phases present in the films were determined by X-ray diffraction (XRD). Measurements of the oxidation state $ZrON_x$ films were investigated by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Thickness of these samples was estimated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). We found that the surface morphology of $ZrON_x$ films measured by atomic force microscopy (AFM) was also depended on the nitrogen gas flow.

• Applied Science and Convergence Technology
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• 제25권1호
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• pp.19-24
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• 2016

In this study, we evaluated the change of electronic structure during redox process in cerium-doped $ZrO_2$ grown by sol gel method. By sol-gel method, we could obtain cerium-doped $ZrO_2$ in high oxygen partial pressure and low temperature. After post annealing process in nitrogen ambient, the film is deoxidized. We used spectroscopic and theoretical methods to analysis change of electronic structure. X-ray absorption spectroscopy (XAS) for O K1-edge and Density Functional Theory (DFT) calculation using VASP code were performed to verify the electronic structure of the film. Also, high resolution x-ray photoelectron spectroscopy (HRXPS) for Ce 3d was carried out to confirm chemical bond of cerium doped $ZrO_2$. Through the investigation of the electronic structure, we verified as followings. (1) During reduction process, binding energy of oxygen is increase. Simultaneously, oxidation state of cerium was change to 4+ to 3+. (2) Cerium 4+ and cerium 3+ states were generated at different energy level. (3) Absorption states in O K edge were mainly originated by Ce 4+ $f_0$ and Ce 3+, while occupied states in valance band were mainly originated from Ce 4+ $f_2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제22권2호
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• pp.73-77
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• 2012

Co-(0.8 wt%) and Ce-(0.4 wt%) doped cubic zirconia ($ZrO_2$ : $Y_2O_3$ = 80 : 20, 70 : 30, 60 : 40, 50 : 50 wt%) single crystals grown by a skull melting method were heat-treated in $N_2$ at $1000^{\circ}C$ for 5 hrs. The orange, yellowish brown and brown colored as-grown single crystals were changed into either brownish red, yellow and green color after the heat treatment. Before and after the heat treatment, the YSZ (yttria-stabilized zirconia) single crystals were cut for wafer form (${\phi}6.5mm{\times}t2mm$). The optical and structural properties were examined by UV-VIS spectrophotometer and X-ray diffraction. Absorption by $Ce^{3+}(^2F_{5/2,7/2}(4f){\rightarrow}^2T_g(5d^1))$, $Co^{2+}(^4A_2(^4F){\rightarrow}^4T_1(^4F)$ or $^4T_1(^4P))$ and $Co^{3+}$, change of ionization energy and lattice parameter were confirmed.

• Korean Journal of Mineralogy and Petrology
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• 제35권4호
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• pp.447-455
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• 2022

Fully dehydrated Tl₁₂-LTA (|Tl₁₂|[Si₁₂Al₁₂O₄₈]-LTA,Tl₁₂-A) was treated with 6.0×10³ Pa of ZrI₄ (g) at 623 K for 72 hr under anhydrous conditions. The crystal structure of product, |Zr_0.25I_1.5Tl₁₂|[Si₁₂Al₁₂O₄₈]-LTA, was determined by single-crystal crystallography using synchrotron X-radiation in the cubic space group Pm3m (a = 12.337(2) Å). It was refined using all data to the final error index (for the 712 unique reflections for which F_o> 4σ(F_o) R₁/wR₂= 0.055/0.189. In this structure, octahedral ZrI₆^2- ions center about 25% of the large cavities (Zr-I = 2.91(4) Å). Each coordinates to eight Tl⁺ ions and they are further bridged by Tl⁺ ions in the planes of 8-rings to form a cubic three-dimensional ZrI₆Tl₁₁⁹⁺ cationic cluster. About 1.5 Tl⁺ ions per unit cell moved to deeper side of sodalite cavity after reaction with ZrI₄(g). The remaining Tl⁺ ions occupy well-established cation positions near 6- and 8-rings.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제20권4호
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• pp.159-163
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• 2010

Co-(0.5 mol%) and Ce-(0~0.3 mol%) doped cubic zirconia ($ZrO_2:Y_2O_3$=64:36 mol%) single crystals grown by a skull melting method were heat-treated in $N_2$ at $1200^{\circ}C$ for 3 hrs. The brown-colored as-grown single crystals were changed into either green or blue color after the heat treatment. Before and after the heat treatment, the YSZ (yttriastabilized zirconia) single crystals were cut for wafer form (${\phi}7mm{\times}t2mm$) and round brilliant cut ($\phi$ 12 mm). The optical and structural properties were examined by UV-VIS spectrophotometer and X-ray diffraction. Absorption by $Ce^{3+}(^2F_{5/2},\;_{7/2}(4f){\rightarrow}^2T_g(5d^1)),\;Co^{2+}(^4A_2(^4F){\rightarrow}^4T_1(^4F)$ or $^4T_1(^4P))$ and $Co^{3+}$, change of ionization energy and lattice parameter were confirmed.

• Journal of the Korean Chemical Society
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• 제57권5호
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• pp.547-553
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• 2013

Zirconium oxide ($ZrO_2$) nano porous membranes were fabricated by electrochemical two-step anodization with an electropolished zirconium substrate in inorganic water-based and organic electrolyte systems containing small amounts of fluoride. Using two-step anodization and organic electrolytes, highly regular and ordered nanotubular $ZrO_2$ oxide layers can be compared with aqueous electrolytes. The morphology and size of the nano porous layers were characterized by FE-SEM (field emission scanning electron microscopy), XRD (X-ray diffraction), and EDS (energy dispersive spectroscopy). Luminescence properties were investigated by photoluminescence measurements.

• Journal of Powder Materials
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• 제8권3호
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• pp.163-167
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• 2001

A bulk porous $CaZrO_3/MgO$ composite with plantinum nano-dispersion was synthesized in air atmosphere through the combination of several in situ reactions, including the pyrolysis of $PtO_2$. A mixture of $CaMg(CO_3)_2$(dolomite), $ZrO_2$, $PtO_2$ and LiF (0.5 wt%, as an additive) was cold isostatically pressed at 200 MPa and sintered at $1100^{\circ}C$ for 2 h. The porous $CaZrO_3/MgO/Pt$ composite ($CaZrO_3/MgO$ : Pt=99 : 1 in volume) had a uniformly open-porous structure (porosity: 56%) with three-dimensional (3-D) network and a narrow pore-size distribution, similarly to the porous $CaZrO_3/MgO$ composites reported before. Catalytic Properties (viz., NO direct decomposition and NO reduction by $C_2H_4$) of the $CaZrO_3/MgO/Pt$ composite were investigated up to $900^{\circ}C$. In the absence of oxygen, the NO conversion rate reached ~52% for the direct decomposition and ~100% for the reduction by $C_2H_4$, respectively. The results suggest the possibility of the porous composite as a multifunctional filter, i.e., simultaneous hot gas-filtering and $de-NO_x$ in one component.