• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.279-282
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• 2003

For the millimeter-wave dielectrics, Forsterite-based ceramics were produced. Pure forsterite ceramics($Mg_2SiO_4$) shows porous micro-structure and very low Q*f values, which is not suitable for the dielectrics for the millimeter-wave band. Several sintering aids including $Al_2O_3$, $Li_2CO_3$, $Li_2SiO_4$, were added to the forsterite ceramics in order to produce dense low-loss dielectrics. Among these additives, $Li_2CO_3$ is the most effective sintering aids. Several sub-components including NiO, ZnO, $SnO_2$, $TiO_2$, were added to enhance the microwave dielectric properties. $TiO_2$ is the most effective additive to enhance the dielectric properties at microwave bands. The simultaneous addition of $TiO_2$ and $Li_2CO_3$ increases Q*f value over 170,000, which can be used as dielectrics in millimeter-wave bands.

• Journal of the Korean Ceramic Society
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• v.42 no.6 s.277
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• pp.384-390
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• 2005

[ ${\alpha}-Al_2O_3$ ] precursor was synthesised by sol-gel method using aluminum sulfate, sodium sulfate and sodium carbonate as law materials. The flaky ${\alpha}-Al_2O_3$ crystals were prepared by heating using precursor about $1,050^{\circ}C$. In this study, the effect of some transition-metal sulfate ($FeSO_4,\;SnSO_4,\;ZnSO_4$) addition have been investigated. When iron sulfate was added, it could see that act on impurities in crystal growth process. In case of tin sulfate, distribution of Platelets was very broad. When flaky ${\alpha}-Al_2O_3$ crystals were prepared zinc sulfate addition, thickness, size, and distribution of platelets was suited to industrial application. The average diameter of flaky ${\alpha}-Al_2O_3$ crystals was about 20 $\mu$m, and its thickness was about 0.3 $\mu$m. Increasing addition of zinc sulfate, thickness of ${\alpha}-Al_2O_3$ platelet was decreased.

• Restorative Dentistry and Endodontics
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• v.19 no.1
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• pp.1-26
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• 1994

The purpose of this study was to investigate the dissolution components during corrosion of amalgams and to identify surface corrosion products in the modified Fusayama artificial saliva. Four type of amalgam alloys were used: low copper lathe cut amalgam alloy (Cavex 68), low copper spherical amalgam alloy (Caulk Spherical Alloy), high copper admixed amalgam alloy (Dispersalloy) and high copper single composition amalgam alloy (Tytin). Each amalgam alloy and Hg were triturated according to the manufacturer's direction by means of mechanical amalgamator (Capmaster, S.S.White), and then the triturated mass was inserted into the cylindrical metal mold which was 10mm in diameter and 2.0mm in height and condensed with compression of 150kg/$cm^2$ using oil pressor. The specimens were removed from the mold and stored at room temperature for 7 days and cleansed with distiled water for 30 minutes in an ultrasonic cleaner. The specimens were immersed in the modified Fusayama artificial saliva for the periods of 1 month, 3 months and 6 months. The amounts of Hg, Cu, Sn and Zn dissolved from each amalgam specimen immersed in the artificial saliva for the periods of 1 month, 3 months and 6 months were measured using Inductivity Coupled Plasma Atomic Emission Spectrometry (ICPQ-1000, Shimadzu, Japan) and amount of Ag dissolved from amalgam specimen was measured using Atomic Absorption Spectrophotometry (Atomic Absorption/Flame emission spectrophotometer M-670, Shimadzu, Japan). A surface corrosion products of specimens were analysed using Electron Spectroscopy Chemical Analyser (ESCA PHI-558, PERKIN ELMER, U.S.A.). The secondary image and back scattered image of corroded surface of specimens was observed under the SEM, and the corroded surface of specimens was analysed with the EDX. The following results were obtained. 1. The dissolution amount of Cu was the most in high copper admixed amalgam(Dispersalloy) and the least in high copper single composition amalgam(Tytin). 2. Sn and Zn were dissolved during all the experiment periods, and dissolution amounts were decreased as the time elapsed. 3. Initial surface corrosion products were ZnO and SnO. 4. Corrosion of ${\gamma}$ and ${\gamma}_2$ phase in low copper amalgams was observed and Ag-Cu eutectic alloy phase was corroded in low copper spherical amalgam(Caulk Sperical Alloy). 5. Corrosion of ${\gamma}$ and $\eta$' phase in high copper amalgams was observed and Ag-Cu eutectic alloy phase was corroded in high copper admixed amalgam(Dispersalloy). 6. Sn-Cl was produced in the subsurface of low copper amalgams and high copper admixed amalgam.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.402.2-402.2
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• 2016

In photoelectrochemical (PEC) water splitting, Cu2ZnSnS4 (CZTS) compound has attracted intense attention as a photocathode due to not only large optical absorption coefficient, but also earth-abundance of constituent elements and suitable band alignment. With rapid development of nanotechnology, one-dimensional nanostructures of CZTS have been investigated as a potential form to achieve high efficiency because the nanostructures are expected to be capable of capturing more light and enhancing charge separation and transport. Here, we report a well-controlled fabrication route for vertically-aligned CZTS nanorod arrays on anodic aluminium oxide (AAO) template via simple sol-gel process followed by deposition of ZnS or CdS buffer layers on the CZTS nanorod to enhance charge separation. The structure, morphology, composition, optical absorption, and PEC properties of the resulting CZTS nanorod samples were characterized using X-ray diffraction, Raman spectroscopy, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy, and UV-vis spectroscopy.

• Archives of design research
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• v.17 no.4
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• pp.241-250
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• 2004

In this research, the copper alloy plates C2200, C5210, C7701, C8113 were selected to make datum and to identify further usage of metal craft experimentation. For its experimentation, the general welding and TIG welding methods were researched; for 2nd experimentation, the Reticulation and Electroforming skill's differences in color and temperature were researched. With these methods 3 different kinds of works are introduced for sample studies. For this research, Dr. Lee, Dong-Woo who works in Poongsan Metal Co, supported 4 kinds of copper alloy metals. Which are Commercial bronze (Cu-Zn), Deoxidiged Copper(Cu-Sn-P), Nickel Silver (Cu-Ni-Zn), and White Bronze (Cu-Ni); they were applied partly and wholly by the method of Laminatin, Reticulation, Fusing, and Electroforming skills. In case of C2200, the brass, the A. C. TIG welding method is better under 2mm slight plate; the D.C. TIG welding is better upper 2mm plate; and 250~300$^{\circ}C$ is recommended for remain heat treatment. In case of C5210, not having Hydrogen in high temperature return period, doesn't need Oxygen in high temperature and hardening in comparative high temperature neither, it is good for welding. It contains Sn 2-9% ad P 0.03-0.4% generally; and in accordance with the growth rate of Sn contain amount, the harden temperature boundary become broad. In case of cold moment after welding, they are recommended that higher speed TIG welding, smaller melting site and less than 200$^{\circ}C$ for pre-heating temperature. In case of C7701, the 10-20% Ni, 15-30% Zn are widely used.. If it is upper 30% Zn, it become (${\alpha}+{\beta}$) system and adhesive power rate become lower, and the productivity become lower in low temperature but the productivity become higher in high temperature. Nickel Silver's resistance of electricity is well; and the heatproof and incorrodibility is good, too. Lastly, in case of C8113, good at persistence in salty and grind; high in strength of high temperature. In case of white brass, contain 10-30% Nickel and hardened in high temperature and become single phrase. For these reason, the crystallization particles easily become large, if the resistance become higher small amount of Pb, P, S separation rate become higher.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.439-440
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• 2008

Indium Zinc Tin Oxide (IZTO) thin films for transparent thin film transistor (TTFT) were deposited on glass substrate at room temperature by facing targets sputtering (FTS). The FTS system was designed to array two targets facing each other and forms the high- density plasma between. Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90wt.%, $SnO_2$ 10wt.%), the other is IZO($In_2O_3$ 90wt%, ZnO 10wt%). The conductive and optical properties of IZTO thin film is determined depending on variation of DC power and working pressure. Therefore, IZTO thin films were prepared with different DC power and working pressure. As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), a scanning electron microscopy (SEM), a Hall Effect measurement system. As a result, all IZTO thin films deposited on glass substrate showed over 80% of transmittance in visible range (400~800 nm) at $O_2$ gas flow rate. We could obtain IZTO thin films with the lowest resistivity $5.67\times10^{-4}$ [$\Omega{\cdot}cm$] at $O_2$ gas flow rate 0.4 [sccm).

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.55-57
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• 2017

Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.108-108
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• 2009

ITO에 사용되는 주된 재료인 인듐의 bixbyite 구조는 TCOs의 전기적 특성에서 매우 중요한 것으로 알려져 있다. 때문에 인듐의 Bixbyite구조를 유지하면서 인듐의 사용량을 줄이기 위해 최적의 Solubility limit에 관해 연구하였다. 이를 위해 In2O3-ZnO-SnO2의 삼성분계 기본 조성에 두가지 물질을 추가로 첨가하여 첨가량에 따른 Solubility limit을 연구하였다. Solubility limit의 측정을 위해 X-ray Diffractometer(XRD)를 사용하였으며, 첨가 원소의 양이 증가할수록 TCOs target의 Latice parameter값은 작아졌다, SEM을 통한 미세구조의 관찰로 원소첨가에 따른 샘플의 소결에너지 변화를 분석할 수 있었다. 제작된 시편의 정성분석 및 Chemical binding Energy를 측정하기 위해 X-ray Photo Spectroscopy (XPS)를 이용하였으며, 전기적인 특성 측정을위해 4-Point prove mesurement 방법을 사용하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.208-208
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• 2010

Indium zinc tin oxide (IZTO) thin films were studied as a possible alternative to indium tin oxide (ITO) films for providing low-cost transparent conducting oxide (TCO) for thin film photovoltaic devices. IZTO films were deposited onto glass substrates at room temperature. A dc/rf magnetron co-sputtering system equipped with a ceramic target of the same composition was used to deposit TCO films. Earlier studies showed that the resistivity value of $In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20) films could be lowered to approximately $6{\times}10^{-4}ohm{\cdot}cm$ without sacrificing optical transparency and still maintaining amorphous structure through the optimization of process variables. The growth rate was kept at about 8 nm/min while the oxygen-to-argon pressure ratio varied from 0% to 7.5%. As-deposited films were always amorphous and showed strong oxygen pressure dependence of electrical resistivity and electron concentration values. Influence of forming gas anneal (FGA) at medium temperatures was also studied and proven effective in improving electrical properties. In this study, the chemical composition of the targets and the films varied around the $In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20). It was the main objective of this paper to investigate how off-stoichiometry affected TCO characteristics including electrical resistivity and optical transmission. In addition to the composition effect, we have also studied how film properties changed with processing variables. IZTO thin films have shown their potential as a possible alternative to ITO thin films, in such way that they could be adopted in some applications where currently ITO and IZO thin films are being used. Our experimental results are compared to those obtained for commercial ITO thin films from solar cell application view point.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.491-496
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• 2011

Transparent conducting oxides (TCOs) used in the antireflection layer and current spreading layer of heterojunction solar cells should have excellent optical and electrical properties. Furthermore, TCOs need a high work function over 5.2 eV to prevent the effect of emitter band-bending caused by the difference in work function between emitter and TCOs. Sn-doped $In_2O_3$ (ITO) film is a highly promising material as a TCO due to its excellent optical and electrical properties. However, ITO films have a low work function of about 4.8 eV. This low work function of ITO films leads to deterioration of the conversion efficiency of solar cells. In this work, ITO films with various Zn contents of 0, 6.9, 12.7, 28.8, and 36.6 at.% were fabricated by a co-sputtering method using ITO and AZO targets at room temperature. The optical and electrical properties of Zn-doped ITO thin films were analyzed. Then, silicon heterojunction solar cells with these films were fabricated. The 12.7 at% Zn-doped ITO films show the highest hall mobility of 35.71 $cm^2$/Vsec. With increasing Zn content over 12.7, the hall mobility decreases. Although a small addition of Zn content increased the work function, further addition of Zn content over 12.7 at.% led to decreasing electrical properties because of the decrease in the carrier concentration and hall mobility. Silicon heterojunction solar cells with 12.7 at% Zn-doped ITO thin films showed the highest conversion efficiency of 15.8%.