• Proceedings of the Korean Society of Marine Engineers Conference
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• 2006.06a
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• pp.289-290
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• 2006

We report a study of Zn(S)Se/GaAs heterojunction solar cells grown by molecular beam epitaxy (MBE). Zn(S)Se/GaAs heterostructures prepared under different conditions were characterized in-situ by reflection high-energy electron diffraction (RHEED). Structural and electrical properties were investigated with double crystal X-ray diffraction and current-voltage characteristics, respectively. The fabricated $n-ZnS_{0.07}Se_{0.93}/p-GaAs$ solar cell (SC #2) exhibited open circuit voltage($V_{oc}$) of 0.37 V, short circuit current($I_{sc}$) of $1.7{\times}10^{-2}$ mA, fill factor of 0.62 and conversion efficiency of 7.8 % under 38.5 $mW/cm^2$ illumination.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.6
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• pp.235-239
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• 2006

ZnO-doped near-stoichiometric $LiNbO_3$ single crystals of $0.8{\sim}1.0mm$ diameter and $30{\sim}35mm$ length were grown by the micro-pulling down (U-PD) method. The structure of the grown crystals was confirmed by powder x-ray diffraction (XRD) patterns. Electron probe micro analysis (EPMA) showed that Zn ions were homogeneously incorporated In grown crystals. The threshold in ZnO doping level was confirmed that an abrupt change in the features of $OH^-$ absorption band as doping level reaching about 2 mol%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.539-542
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• 2004

전자기기의 발달과 더불어 정보통신분야의 발달로 고주파 대역에서 우수하고 안정적인 Ni-Zn 페라이트를 제조하기 위해, Ni(니켈)의 일부를 코발트(Co)로 치환하여 결정자기이방성 상수 값을 증가시켜, 공명 주파수를 고주파 대역으로 높이고자 하였다. Co 함량이 증가함에 따라 투자율은 감소하는데, 이는 결정자기 이방성 상수를 크게 하여 공명 주파수를 높이는 결과를 보였으며, x=0.05에서 투자율 75, 공명 주파수 20MHz의 특성을 나타내었다.

• Korean Journal of Materials Research
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• v.28 no.10
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• pp.564-569
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• 2018

$Cu_2ZnSn(S,Se)_4$ (CZTSSe) films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu(CZT) precursor films. The precursor was dried in a capped state with aqueous NaOH solution. The CZT precursor films were sulfo-selenized in the S + Se vapor atmosphere. Sodium was doped during the sulfo-selenization treatment. The effect of sodium doping on the structural and electrical properties of the CZTSSe thin films were studied using FE-SEM(field-emission scanning electron microscopy), XRD(X-ray diffraction), XRF(X-ray fluorescence spectroscopy), dark current, SIMS(secondary ion mass spectrometry), conversion efficiency. The XRD, XRF, FE-SEM, Dark current, SIMS and cell efficiency results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the sodium doping. Further detailed analysis and discussion for effect of sodium doping on the properties CZTSSe thin films will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.107-107
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• 2010

ZnO는 상온에서 에너지 밴드갭이 3.37 eV 이고 엑시톤 속박에너지가 60 meV 인 넓은 에너지 띠를 가진 반도체이다. ZnO 반도체는 고에너지 영역에서 광투과율 및 에너지 수집율이 큰 특성을 가지고 있기 때문에 단파장 영역에서 작동하는 발광 다이오드나 반도체레이저 소자 응용에 사용되고 있다. 이와 더불어 액정디스플레이, 유기발광소자 및 태양전지에서 투명 산화물 전극으로 많은 응용이 되고 있다. 본 연구에서는 p-type Si 기판 위에 ZnO 나노입자 형성과 구조적 성질과 전자적 성질에 대하여 조사하였다. ZnO 나노입자를 형성하기 위해 ethanol에 zinc acetate dehydrate (5 wt%)을 적절히 분산시킨 $Zn(CH_3COO)_2H_2O\;+\;CH_3OH$ 용액을 스핀 코팅하여 산소 분위기에서 각각 $300^{\circ}C$, $500^{\circ}C$, $700^{\circ}C$ 및 $900^{\circ}C$로 각각 2시간 동안 열처리 하였다. X-ray 회절 실험 결과는 열처리 온도에 관계없이 ZnO (0001)의 피크가 관측되었다. 원자힘 현미경 이미지상으로 열처리 온도에 따른 ZnO 나노입자의 표면상태의 변화와 나노입자의 크기의 변화를 확인하였다. X-ray 광전자 분광 스펙트럼 결과는 Zn $2p_{3/2}$와 O 1s의 전자상태 스펙트럼을 분석하여 ZnO 나노입자가 형성됨을 보여주었다. 본 연구를 통하여 용액방법을 사용하여 제작된 ZnO 나노입자의 열처리 온도변화에 따른 구조적 성질과 전자적 성질을 이해하는데 도움을 줄 것이다.

• Transactions of Materials Processing
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• v.23 no.6
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• pp.386-391
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• 2014

In the current study, Al-Mn-Zn alloys are strip-cast and used as the base alloy for the core of aluminum clad sheets used in automotive condenser fins. Transition elements such as Cu and Cr are added to the base core alloy in order to improve the properties of the clad sheets. The AA4343/Al-Mn-Zn-X(X: Cu, Cr)/AA4343 clad sheets are fabricated by roll bonding and further cold-rolled to a thickness of 0.08 mm. Clad sheets were intermediately annealed during cold rolling at $450^{\circ}C$ in order to obtain 40% reduction at the final thickness. Tensile strength and sag resistance of the clad sheets are improved by Cu additions to the core alloy, while corrosion resistance is also increased. Cr-additions to the clad sheets enhance sag resistance and provide low enough corrosion, although tensile strength is not improved. The effect of Cu and Cr additions on the properties of the clad sheets is elucidated by microstructural analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.54-58
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• 2017

The effect of low temperature ($250^{\circ}C$) heat treatment after electron irradiation (irradiation time = 30, 180, 300s) on the chemical bonding and electrical properties of ZnO thin films prepared using a sol-gel process were examined. XPS (X-ray photoelectron spectroscopy) analysis showed that the electron beam irradiation decreased the concentration of M-O bonding and increased the OH bonding. As a result of the electron beam irradiation, the carrier concentration of ZnO films increased. The on/off ratio was maintained at ${\sim}10^5$ and the $V_{TH}$ values shifted negatively from 11 to 1 V. As the irradiation time increased from 0 to 300s, the calculated S. S. (subthreshold swing) of ZnO TFTs increased from 1.03 to 3.69 V/decade. These values are superior when compared the sample heat-treated at $400^{\circ}C$ representing on/off ratio of ${\sim}10^2$ and S. S. value of 10.40 V/decade.

• Journal of Electrochemical Science and Technology
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• v.3 no.4
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• pp.178-184
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• 2012

A porous nickel (P-Ni) substrate was prepared by selective leaching of zinc from pressed pellets containing powders of Ni & Zn in 4 M NaOH solution. Anodic deposition of manganese oxide onto the porous Ni substrate ($MnO_x$/P-Ni) formed nano-flakes of manganese oxide layers as revealed in SEM studies. Pseudocapacitance of this oxide electrode was evaluated by cyclic voltammetry (CV) and chronopotentiometry (CHP) in 2 M NaOH solution. The specific capacitance of the Mn oxide electrode was as high as 1515 F $g^{-1}$, which was ten times higher than Mn oxide deposited on a flat Ni-ribbon. 80% of capacity was retained after 200 charge/discharge cycles. The system showed no loss of activity in dry form over period of days. The impedance studies indicated highly conducting $MnO_x$/P-Ni substance and the obtained specific capacitance from impedance data showed good agreement with the charge/discharge measurements.

• Transactions of the Society of Information Storage Systems
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• v.1 no.2
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• pp.127-131
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• 2005

We report a nanometer scale mark formation using a $PtO_x$ thin film or a TbFeCo rare-earth transition metal film and the mechanism. The multi-layer samples($ZnS-SiO_2/PtOx/ZNS-SiO_2,\;ZnS-SiO_2/TbFeCo/ZnS-SiO_2$) were prepared with a magnetron sputtering method on a polycarbonate or a glass substrate. By laser irradiation of approximately a few nanoseconds, nanometer scale marks were fabricated. During the fabrication process, the thin films were thermally reacted or inter-diffused during the laser irradiation. 75 nm bubble marks in the PtOx multi-layer sample by an approximately 4-ns laser irradiation. Inside the bubble mark, Pt particles with a few nanometer sizes are distributed. The $50{\sim}100$ nm bubble marks in the TbFeCo multi-layer sample by a few nanosecond laser irradiations. We will report the detail structure of the samples, the bubble mark formation process and the mechanism.

• Journal of the Korean earth science society
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• v.27 no.3
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• pp.313-327
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• 2006

This study investigated the geochernical characteristics of Mn scale formed in groundwater wells at the Damyang area. The composition of Mn scale consists mainly of MnO and $SiO_2$. The content of Mn ranges from56.61wt.% to 68.69wt.%, and $SiO_2$ content ranges from 1.56wt.% to 10.45wt.%. The contents of Mo and Ba in Mn scale increased with increased depth; whereas, the content of Zn and Pb decreased with increased depth. Birnessite, quartz and feldspars were identified in Mn scales using x-ray powder diffraction studies. The IR absorption bands for Mn scales show major absorption band due to OH stretching, adsorbed molecular water, and birnessite stretching, respectively. In the SEM and EDS analysis, the Mn scale consists of botryoidal, spherical, spherulite, and empty straw structure. Those structure may be precipitated simply due to oversaturation with concentrated Mn content or may be formed through biogenic precipitation by Lepthothrix discophora. Under microanalysis using EDS on those structure surface of Mn scales, the Mn atomic percent range from 28 to 44, and such elements revealed the presence of Si, K, Na, Ca, Cl, Cu, Zn, and Ba.