• Title/Summary/Keyword: $ZnS_x(OH)_y$

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Development of a New Double Buffer Layer for Cu(In, Ga) $Se_2$ Solar Cells

  • Larina, Liudmila;Kim, Ki-Hwan;Yoon, Kyung-Hoon;Ahn, Byung-Tae
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.06a
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    • pp.152-153
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    • 2006
  • The new approach to buffer layer design for CIGS solar cells that permitted to reduce the buffer absorption losses in the short wavelength range and to overcome the disadvantages inherent to Cd-free CIGS solar cells was proposed. A chemical bath deposition method has been used to produce a high duality buffer layer that comprises thin film of CdS and Zn-based film. The double layer was grown on either ITO or CIGS substrates and its morphological, structural and optical properties were characterized. The Zn-based film was described as the ternary compound $ZnS_x(OH)_y$. The composition of the $ZnS_x(OH)_y$ layer was not uniform throughout its thickness. $ZnS_x(OH)_y$/CdS/substrate region was a highly intermixed region with gradually changing composition. The short wavelength cut-off of double layer was shifted to shorter wavelength (400nm) compared to that (520 nm) for the standard CdS by optimization of the double buffer design. The results show the way to improve the light energy collection efficiency of the nearly cadmium-free CIGS-based solar cells.

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CIGS 박막태양전지용 Cd free형 ZnS(O, OH) 버퍼층 제조 및 특성평가

  • Kim, Hye-Jin;Kim, Jae-Ung;Kim, Gi-Rim;Jeong, Deok-Yeong;Jeong, Chae-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.257.1-257.1
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    • 2015
  • Cu(In,Ga)Se2 (CIGS) 박막 태양 전지에서 buffer layer는 CIGS 흡수층과 TCO 사이의 밴드갭 차이에 대한 문제점과 lattice mismatch를 해결하기 위해 필수적이다. 흔히 buffer layer 물질로는 CdS가 가장 많이 사용되고 있으나 Cd의 독성에 관한 문제가 야기되고 있다. 따라서 ZnS(O, OH) buffer layer가 친환경 물질로 기존의 CdS 버퍼 층의 대체 물질로 각광 받고 있으며, 단파장 범위에서 높은 투과율로 인해 wide band gap의 Chalcopyrite 태양 전지에 응용되는 buffer layer로 많은 연구가 이루어지고 있다. 또한 buffer layer를 최적화 하여 carrier lifetime과 양자 효율이 증가시킬 수 있는 특성을 가지고 있다. 이 연구에서는 Cu(In,Ga)Se2 (CIGS) 박막에 화학습식공정 (CBD) 방법을 이용하여 최적화된 ZnS(O, OH)의 증착 조건을 찾고, 고품질의 buffer layer를 제조하기 위한 실험에 초점을 맞췄다. 또한, buffer layer의 막질을 개선하고 균일한 막을 제조하기 위해 processing parameters인 시약의 농도, 제조 시간 및 온도 등의 다양한 변화를 통해 실험을 진행하였다. 그 후 최적화된 ZnS(O, OH) buffer layer의 특성 분석을 위해 X-ray diffraction(XRD), photoluminescence (PL), scanning electron microscope (SEM) and GD-OES을 이용하였고, 이를 통해 제조된 CIGS 박막 태양전지는 light induced current-voltage (LIV) and external quantum efficiency (EQE)를 통해 특성 분석을 실시 하였다. 결과적으로, 제조된 ZnS(O, OH) buffer layer의 $ZnSO4{\cdot}7H2O$의 농도는 0.16 M, Thiourea는 0.5 M, NH4OH는 7.5 M, 그리고 반응 온도는 77.5 oC의 조건 하에 CIGS 기판 위에 균일하고 균열이 없는 ZnS(O, OH) 박막을 제조하였으며 이때 제조된 태양전지의 소자 특성은 Voc = 0.478 V, Jsc = 35.79 mA/cm2, FF = 47.77%, ${\eta}=8,18 %$이다.

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Effect of Zn content on Shear Strength of Sn-0.7Cu-xZn and OSP surface finished Joint with High Speed Shear Test (Sn-0.7Cu-xZn와 OSP 표면처리 된 기판의 솔더접합부의 고속 전단강도에 미치는 Zn의 영향)

  • Choi, Ji-Na;Bang, Jae-Oh;Jung, Seung-Boo
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.1
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    • pp.45-50
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    • 2017
  • We investigated effect of Zn content on shear strengh of Sn-0.7Cu-xZn and OSP surface finished solder joints. Five pastes of Sn-0.7Cu-xZn (x=0, 0.5, 1.0, 1.5, 2.0 wt.%) solders were fabricated by mixing of solder powder and flux using planatary mixer. $180{\mu}m$ diameter solder balls were formed on OSP surface finished Cu electrodes by screen print method, and the reflow process was performed. The shear strength was evaluated with two high shear speeds; 0.01 and 0.1 m/s. The thickness of the intermetallic compound(IMC) layer was decreased with increasing Zn content in Sn-0.7Cu-xZn solder. The highest shear strength was 3.47 N at the Zn content of 0.5 wt.%. As a whole, the shear strength at condition of 0.1 m/s was higher than that of 0.01 m/s because of impact stress. Fracture energies were calculated by F-x (Force-displacement) curve during high speed shear test and the tendency of fracture energy and that of shear strength were good agreement each other. Fracture took place within solder matrix at lower Zn content, and fracture occured near the interface of OSP surface finished Cu electrode and solder at higher Zn content.

Study of Self Texturing on ZnO:Al TCO surface for Thin-Film Solar Cell (박막태양전지용 ZnO:Al 투명전도막 표면 Self-Texturing 연구)

  • Oh, Kyoung Suk;Yoon, Soon Gil;Lee, Jeong Chul
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.127.2-127.2
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    • 2011
  • 본 연구에서는 RF Magnetron Sputtering System을 이용하여 ZnO계 투명전도막 증착시 Vaporization된 MeOH를 유입함으로써 박막증착과 동시에 표면의 Roughness를 제어하여 이에따른 전기적 특성 및 광학적 특성의 개선에 대하여 연구하였다. 실험방법으로 기존의 RF Magnetron Sputtering System에 Vaporization이 가능한 Ultrasonic을 이용하여 MeOH를 Vaporized시켜 MFC Controll을 통해 챔버에 유입하여 ZnO계 투명전도막의 박막증착과 동시에 표면 Texturing을 하였다. ZnO계 투명전도막의 박막증착시 Vaporized MeOH의 유입에 따른 광학적 특성변화를 UV-visible-nIR spectrometry로 조사하였으며, 전기적 특성 변화를 4-Point-Probe로 조사하였으며, 표면적 특성 변화를 Atomic Force Microscope(AFM), Scanning Electron Microscopy(SEM)를 조사하였으며, 박막의 결정성장특성 변화를 X-ray Diffraction(XRD)으로 조사하였으며, Vaporized MeOH 유입에 따른 박막의 성분분석을 Secondary Ion Mass Spectrometry (SIMS)로 조사함으로써 최적의 조건 및 공정을 확립하였다.

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DEGRADATION OF Zn$_3$$N_2$ FILMS PREPARED BY REACTIVE RF MAGNETRON SPUTTERING

  • Futsuhara, Masanobu;Yoshioka, Katsuaki;Takai, Osamu
    • Journal of the Korean institute of surface engineering
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    • v.29 no.5
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    • pp.563-569
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    • 1996
  • Degradation of $Zn_3N_2$ films is studied by using several analytical techniques. Polycrystalline $Zn_3N_2$ films prepared by reactie rf magnetron sputtering are kept in the air. Electrical and optical properties are measured by using van der Pauw technique and double-beam spectrometry. Structure and chemical bonding states are studied by X-ray diffraction(XRD), Fourier transfer infrared ray spectroscopy(FT-IR) and X-ray photoelectron specroscopy (XPS). Significant differences are observed in optical properties between the degraded film and the ZnO film. XRD analysis reveals that the degraded film contains very small ZnO grains because very weak and broad ZnO peaks are observed. XPS and FT-IR measurements reveal the formation of $Zn(OH)_2$ in the degraded film. The existence of N-H bonds in degraded films is exhibited from the N 1s spectra. $Zn_3N_2$ change into the mixture of ZnO, $Zn(OH)_2$ and an ammonium salt.

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Synthesis and Characterization of ZnS and ZnS/TiO2 Nanocomposites and Their Enhanced Photo-decolorization of MB and 1,5-Diphenyl Carbazide

  • Meng, Ze-Da;Ullah, Kefayat;Zhu, Lei;Ye, Shu;Oh, Won-Chun
    • Journal of the Korean Ceramic Society
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    • v.51 no.4
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    • pp.307-311
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    • 2014
  • ZnS and $ZnS/TiO_2$ were prepared by chemical deposition. The prepared photocatalysts were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), and transmission electron microscopy (TEM). The generation of reactive oxygen species was detected by monitoring the oxidation reaction from 1,5-diphenyl carbazide (DPCI) to 1,5-diphenyl carbazone (DPCO). Excellent catalytic degradation of methylene blue (MB) solution was observed using the $ZnS/TiO_2$ composites during irradiation with visible light. The results show that the photocatalytic performance of $TiO_2$ nanoparticles is improved by loading with ZnS.

Correlation between Oxygen Related Bonds and Defects Formation in ZnO Thin Films by Using X-ray Diffraction and X-ray Photoelectron Spectroscopy (XRD와 XPS를 사용한 산화아연 박막의 결함형성과 산소연관 결합사이의 상관성)

  • Oh, Teresa
    • Korean Journal of Materials Research
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    • v.23 no.10
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    • pp.580-585
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    • 2013
  • To observe the formation of defects at the interface between an oxide semiconductor and $SiO_2$, ZnO was prepared on $SiO_2$ with various oxygen gas flow rates by RF magnetron sputtering deposition. The crystallinity of ZnO depends on the characteristic of the surface of the substrate. The crystallinity of ZnO on a Si wafer increased due to the activation of ionic interactions after an annealing process, whereas that of ZnO on $SiO_2$ changed due to the various types of defects which had formed as a result of the deposition conditions and the annealing process. To observe the chemical shift to understand of defect deformations at the interface between the ZnO and $SiO_2$, the O 1s electron spectra were convoluted into three sub-peaks by a Gaussian fitting. The O 1s electron spectra consisted of three peaks as metal oxygen (at 530.5 eV), $O^{2-}$ ions in an oxygen-deficient region (at 531.66 eV) and OH bonding (at 532.5 eV). In view of the crystallinity from the peak (103) in the XRD pattern, the metal oxygen increased with a decrease in the crystallinity. However, the low FWHM (full width at half maximum) at the (103) plane caused by the high crystallinity depended on the increment of the oxygen vacancies at 531.66 eV due to the generation of $O^{2-}$ ions in the oxygen-deficient region formed by thermal activation energy.

$[Li_{1-5x}Nb_{5(x-y)}Mg(or Zn)_{5y}]Nb_{1-4x+3y}O_3$단결정의 결합 및 물성에 관한 연구

  • 김기현;심광보;오근호
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1997.10a
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    • pp.129-133
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    • 1997
  • 본 연구에서는 LiNbO$_3$ 단결정 소재의 광손상에 대한 저항성을 향상시키는 첨가물로 잘 알려져 이쓴 MgO 및 ZnO를 첨가하여 육성한 조화용융조성(congruent melting composition)의 LiNbO$_3$ 단결정의 domain 구조는 이들 dopants를 첨가함에 따라 single domain에서 ring 형태의 주기적인 domains으로 변화함을 확인하였고, 첨가된 이온이 domain 형성에 미치는 영향을 전자현미경(SEM-WDS)으로 관찰하였다. 또한, 육성한 [Li1-5xNb5(x-y)Mg(or Zn)5y]Nb1-4x+3yO3 단결정들의 유전율(전이온도) 변화 및 광학적 특성[광투과율, 굴절률]을 측정하여 undoped LiNbO$_3$단결정과 비교하였다. 첨가물을 첨가함에 따라 전이온도는 약 20~3$0^{\circ}C$정도 증가하였으며, 10-3 order의 굴절률 변동치를 나타내었다. 또한, 육성된 결정들의 투과율은 대체로 70~80%를 나타내었고, 첨가물을 첨가함에 따라 흡수단과 OH- 흡수 band는 단파장쪽으로 각각 약 5~10nm, 40nm이동됨을 확인하였다. 이는 LiNbO$_3$단결정의 광손상 저항성이 향상되었음을 간접적으로 보여주는 결과이다.

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Effect of the Concentration of Complexing Agent on the Formation of ZnS Buffer Layer by CBD Method (CBD 방법에 의한 ZnS 버퍼층 형성의 착화제 농도에 따른 영향)

  • Kwon, Sang Jik;Yoo, In Sang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.10
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    • pp.625-630
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    • 2017
  • ZnS was chemically deposited as a buffer layer alternative to CdS, for use as a Cd-free buffer layer in $Cu(In_{1-x}Ga_x)Se_2$ (CIGS) solar cells. The deposition of a thin film of ZnS was carried out by chemical bath deposition, following which the structural and optical properties of the ZnS layer were studied. For the experiments, zinc sulfate hepta-hydrate ($ZnSO_4{\cdot}7H_2O$), thiourea ($SC(NH_2)_2$), and ammonia ($NH_4OH$) were used as the reacting agents. The mole concentrations of $ZnSO_4$ and $SC(NH_2)_2$ were fixed at 0.03 M and 0.8 M, respectively, while that of ammonia, which acts as a complexing agent, was varied from 0.3 M to 3.5 M. By varying the mole concentration of ammonia, optimal values for parameters like optical transmission, deposition rate, and surface morphology were determined. For the fixed mole concentrations of $0.03M\;ZnSO_4{\cdot}7H_2O$ and $0.8M\;SC(NH_2)_2$, it was established that 3.0 M of ammonia could provide optimal values of the deposition rate (5.5 nm/min), average optical transmittance (81%), and energy band gap (3.81 eV), rendering the chemically deposited ZnS suitable for use as a Cd-free buffer layer in CIGS solar cells.

Photocatalytic Performance of ZnS and TiO2 Supported on AC Under Visible Light Irradiation

  • Meng, Ze-Da;Cho, Sun-Bok;Ghosh, Trisha;Zhu, Lei;Choi, Jong-Geun;Park, Chong-Yeon;Oh, Won-Chun
    • Korean Journal of Materials Research
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    • v.22 no.2
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    • pp.91-96
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    • 2012
  • AC and ZnS modified $TiO_2$ composites (AC/ZnS/$TiO_2$) were prepared using a sol-gel method. The composite obtained was characterized by Brunauer-Emmett-Teller (BET) surface area measurements, X-ray diffraction (XRD), energy dispersive X-ray (EDX) analysis, scanning electron microscope (SEM) analysis, and according to the UV-vis absorption spectra (UV-vis). XRD patterns of the composites showed that the AC/ZnS/$TiO_2$ composites contain a typical single and clear anatase phase. The surface properties as observed by SEM present the characterization of the texture of the AC/ZnS/$TiO_2$ composites, showing a homogenous composition in the particles showing the micro-surface structures and morphology of the composites. The EDX spectra of the elemental identification showed the presence of C and Ti with Zn and S peaks for the AC/ZnS/$TiO_2$ composite. UV-vis patterns of the composites showed that these composites had greater photocatalytic activity under visible light irradiation. A rhodamine B (Rh.B) solution under visible light irradiation was used to determine the photocatalytic activity. The degradation of Rh.B was determined using UV/Vis spectrophotometry. An increase in the photocatalytic activity was observed. From the photocatalytic results, the excellent activity of the Y-fullerene/$TiO_2$ composites for the degradation of methylene blue under visible irradiation could be attributed to an increase in the photo-absorption effect caused by the ZnS and to the cooperative effect of the AC.