• Title/Summary/Keyword: $ZnO_{1-x}S_x$

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AlN를 도핑시킨 ZnO박막의 전기적 및 광학적 특성

  • Son, Lee-Seul;Kim, Gyeom-Ryong;Lee, Gang-Il;Jang, Jong-Sik;Chae, Hong-Cheol;Gang, Hui-Jae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.88-88
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    • 2011
  • ZnO는 직접 천이형 반도체로써, 상온에서 3.4eV에 해당하는 띠틈을 가지고 있다. 뿐만 아니라 60meV의 큰 엑시톤 결합에너지를 가지고 있어 단파장 광전 소자 영역의 LED(Light Emitting Diode)나 LD(Laser Diode)에 널리 사용되고 있다. 하지만 일반적으로 격자틈새 Zn(Zni2+)이온이나 O 빈자리(V02+)이온과 같은 자연적인 도너 이온이 존재하여 n-형 전도성을 나타낸다. 그러므로 ZnO계 LED와 LD의 개발에 있어서 가장 중요한 연구 과제는 재현성 있고 안정된 고농도의 p-형 ZnO박막을 성장시키는 것이다. 하지만, 자기보상효과나 얕은 억셉터 준위, 억셉터의 낮은 용해도로 인하여 어려움을 가지고 있다. 본 연구에서는 고품질의 p-형 ZnO박막을 제작하기 위해 AlN를 도핑시킨 ZnO박막을 RF 마그네트론 스퍼터링 법을 이용하여 Ar과 O2분위기에서 성장시켰다. ZnO와 AlN타겟을 동시에 사용하였으며, ZnO타겟에 걸어준 RF 파워는 80W, AlN타겟에 걸어준 RF 파워는 5~20W로 변화시켰다. 박막의 전기적, 광학적 특성은 XPS (X-ray Photoelectron Spectroscopy), REELS (Reflection Electron Energy Loss Spectroscopy), XRD (X-ray Diffraction), SIMS (Secondary Ion Mass Spectrometry), AES (Auger Electron Spectroscopy), Hall measurement를 이용하여 연구하였다. XPS측정결과, AlN를 도핑시킨 ZnO박막의 Zn2p3/2와 O1s피크는 undoped ZnO박막의 피크보다 낮은 결합에너지에서 측정되었다. 모든 박막이 결정화 되었으며, (002)방향으로 우선적으로 성장된 것을 확인할 수 있었다. 홀 측정 결과, 기판을 $200^{\circ}C$로 가열하면서 성장시킨 박막이 p-형을 나타내었으며, 비저항(Resistivity)이 $5.51{\times}10^{-3}{\Omega}{\cdot}m$, 캐리어 농도(Carrier Concentration)가 $1.96{\times}1018cm^{-3}$, 이동도(Mobility)가 $481cm^2$/Vs이었다. 또한 QUEELS -Simulation에 의한 광학적 특성분석 결과, 가시광선영역에서 투과율이 90%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여주었다.

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Precipitation of Eu3+ - Yb3+ Codoped ZnAl2O4 Nanocrystals on Glass Surface by CO2 Laser Irradiation

  • Bae, Chang-hyuck;Lim, Ki-Soo;Babu, P.
    • Current Optics and Photonics
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    • v.2 no.1
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    • pp.79-84
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    • 2018
  • We present a novel and simple method to enable spatially selective $ZnAl_2O_4$ nanocrystal formation on the surface of $B_2O_3$-$Al_2O_3$-ZnO-CaO-$K_2O$ glass by employing localized laser heating. Optimized precipitation of glass-ceramics containing nanocrystals doped with $Eu^{3+}$ and $Yb^{3+}$ ions was performed by controlling $CO_2$ laser power and scan speed. Micro-x-ray diffraction and transmission electron microscopy revealed the mean size and morphology of nanocrystals, and energy dispersive x-ray spectroscopy showed the lateral distribution of elements in the imaged area. Laser power and scan speed controled annealing temperature for crystalization in the range of 1.4-1.8 W and 0.01-0.3 mm/s, and changed the size of nanocrystals and distribution of dopant ions. We also report more than 20 times enhanced downshift visible emission under ultraviolet excitation, and 3 times increased upconversion emission from $Eu^{3+}$ ions assisted by efficient sensitizer $Yb^{3+}$ ions in nanocrystals under 980 nm excitation. The confocal microscope revealed the depth profile of $Eu^{3+}$ ions by showing their emission intensity variation.

DEGRADATION OF Zn$_3$$N_2$ FILMS PREPARED BY REACTIVE RF MAGNETRON SPUTTERING

  • Futsuhara, Masanobu;Yoshioka, Katsuaki;Takai, Osamu
    • Journal of Surface Science and Engineering
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    • v.29 no.5
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    • pp.563-569
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    • 1996
  • Degradation of $Zn_3N_2$ films is studied by using several analytical techniques. Polycrystalline $Zn_3N_2$ films prepared by reactie rf magnetron sputtering are kept in the air. Electrical and optical properties are measured by using van der Pauw technique and double-beam spectrometry. Structure and chemical bonding states are studied by X-ray diffraction(XRD), Fourier transfer infrared ray spectroscopy(FT-IR) and X-ray photoelectron specroscopy (XPS). Significant differences are observed in optical properties between the degraded film and the ZnO film. XRD analysis reveals that the degraded film contains very small ZnO grains because very weak and broad ZnO peaks are observed. XPS and FT-IR measurements reveal the formation of $Zn(OH)_2$ in the degraded film. The existence of N-H bonds in degraded films is exhibited from the N 1s spectra. $Zn_3N_2$ change into the mixture of ZnO, $Zn(OH)_2$ and an ammonium salt.

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C-axis Orientation of ZnO Thin Films Prepared by DC Facing Targets Sputtering Method (직류 대향타겟스퍼터링법으로 제작된 ZnO 박막의 c-축 배향성)

  • 금민종;손인환;공석현;성하윤;김경환
    • Journal of Surface Science and Engineering
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    • v.33 no.1
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    • pp.34-37
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    • 2000
  • We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin film's c-axis orientation and grain size were analyzed by XRD (x-ray diffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

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Optical Properties according to BaO Addition for BaO-GeO2-La2O3-ZnO System (BaO-GeO2-La2O3-ZnO 계에 있어서 BaO 첨가량 변화에 따른 광학 특성)

  • Cho, Jaeyoung;Kim, Jinho;Kim, Sae-Hoon;Lee, Mijai
    • Korean Journal of Materials Research
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    • v.32 no.9
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    • pp.379-383
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    • 2022
  • In this study, Barium Germanium glasses were prepared with a composition of xBaO-(72-x)GeO2-8La2O3-20ZnO where x = 16.0, 18.0, 20.0, 22.0 and 24.0 mol% respectively. Their physical and optical properties, such as refractiveness index, glass transition temperature (Tg), softening temperature (Ts), transmittance and Knoop hardness were studied. The results showed that refractive index, Tg, Ts and coefficient of thermal expansion (CTE) increased with increasing BaO concentration. The refractive index of all the prepared samples was observed between 1.7811 to 1.7881. The Abbe number was calculated by formula using nd (589.3 nm), nf (656.3 nm) and nc (486.1 nm) and observed to be between 38 to 40. The Abbe number of the prepared sample was similar to that of BaO and GeO2. The transmittance of the prepared glasses was observed to be between 80 ~ 82 % throughout the range from 200 nm to 800 nm. Knoop hardness divided into seven steps were measured 5 class (≥ 450 ~ < 550) of all prepared samples.

Synthesis and Exploitation in Solar Cells of Hydrothermally Grown ZnO Nanorods Covered by ZnS Quantum Dots

  • Mehrabian, Masood;Afarideh, Hossein;Mirabbaszadeh, Kavoos;Lianshan, Li;Zhiyong, Tang
    • Journal of the Optical Society of Korea
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    • v.18 no.4
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    • pp.307-316
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    • 2014
  • Improved power conversion efficiency of hybrid solar cells with ITO/ZnO seed layer/ZnO NRs/ZnS QDs/P3HT/PCBM/Ag structure was obtained by optimizing the growth period of ZnO nanorods (NRs). ZnO NRs were grown using a hydrothermal method on ZnO seed layers, while ZnS quantum dots (QDs) (average thickness about 24 nm) were fabricated on the ZnO NRs by the successive ionic layer adsorption and reaction (SILAR) technique. Morphology, crystalline structure and optical absorption of layers were analyzed by a scanning electron microscope (SEM), X-ray diffraction (XRD) and UV-Visible absorption spectra, respectively. The XRD results implied that ZnS QDs were in the cubic phase (sphalerite). Other experimental results showed that the maximum power conversion efficiency of 4.09% was obtained for a device based on ZnO NR10 under an illumination of one Sun (AM 1.5G, $100mW/cm^2$).

Low Temperature Sintering and Piezoelectric Properties of $Al_2O_3$, CuO and $MnO_2$ Added $Pb(Zr_xTi_{1-x})O_3-Pb(Zn_{1/3}Nb_{2/3})O_3-Pb(Ni_{1/3}Nb_{2/3})O_3$ Ceramics ($Al_2O_3$, CuO와 $MnO_2$가 첨가된 $Pb(Zr_xTi_{1-x})O_3-Pb(Zn_{1/3}Nb_{2/3})O_3-Pb(Ni_{1/3}Nb_{2/3})O_3$ 유전체의 저온 소결 및 압전 특성)

  • Ahn, Cheol-Woo;Park, Seung-Ho;Priya, Shashank;Uchino, Kenji;Song, Jae-Sung;Nahm, Sahn
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.138-141
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    • 2004
  • [ $MnO_2$ ]가 첨가된 $0.9Pb(Zr_{0.5}Ti_{0.5})O_3-0.2Pb[(Zn_{0.8}Ni_{0.2})_{1/3}Nb_{2/3}]O_3$(0.8PZT-0.2PZNN) 세라믹스는 그 압전특성과 유전특성이 뛰어나지만 $1000^{\circ}C$ 이하의 낮은 소결 온도에서는 소결되지 않는다. $1000^{\circ}C$이하의 낮은 소결온도에서 소결하기 위해 CuO를 첨가한 결과, 소결온도 $920^{\circ}C$에서 소결성은 우수하였으나 그 압전 특성의 저하가 두드러졌다. 이는 XRD에서 확인한 결과에 따르면 CuO의 첨가가 우수한 MPB 조성으로 판명된 $MnO_2$ 가 첨가된 0.8PZT-0.2PZNN 세라믹스의 결정구조를 Rhombohedral 구조로 바꾸기 때문인 것으로 보였으며 이러한 문제는 PZNN의 비율을 조절하여 0.875PZT-0.125PZNN 세라믹스를 선택함으로 인해 해결할 수 있었다. 그러나 여전히 낮은 $Q_m$값을 높이기 위해서 $Al_2O_3$를 첨가하였고 그 결과 시편의 tetragonality 감소와 $Q_m$값의 증가를 확인할 수 있었으나 그 첨가량이 0.2wt% 이상일 경우에는 밀도의 감소로 인한 압전특성의 저하가 나타났다. 밀도의 향상을 위해 Zn and Ni excess 조성을 선택하였고 그 결과 0.5wt% $MnO_2$와 0.2wt% CuO 그리고 0.3wt% $Al_2O_3$를 첨가한 0.875PZT-0.125PZNN 세라믹스(Zn and Ni excess 조성)를 $920^{\circ}C$에서 소결한 경우 $k_p=0.581,\;Q_m=809,\;d_{33}=345\;pC/N\;and\;{\varepsilon}_{33}/{\varepsilon}_0=1345$의 빼어난 압전 및 유전특성과 $330^{\circ}C$의 높은 $T_c$를 보였고 그 조성의 vibration velocity는 약4.5 m/s로 나타났다.

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The Effects of Substrate Bias Voltage on the Formation of $(ZnS)_{1-x}-(SiO_2)_x$ Protective Films in Phase Change Optical Disk by R.F. Sputtering Method. (R.F. 스퍼터링법에 의한 상변화형 광디스크의 $(ZnS)_{1-x}-(SiO_2)_x$ 보호막 제조시 기판 바이어스전압의 영향)

  • Lee, Tae-Yun;Kim, Do-Hun
    • Korean Journal of Materials Research
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    • v.8 no.10
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    • pp.961-968
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    • 1998
  • In order to investigate the effects of substrate bias voltage on the formation of$ZnS-SiO_2$ protective film in phase change optical disk by R.F. magnetron sputtering method, thin dielectric film was formed on Si wafer and Corning glass by using ZnS(80mol%)-$SiO_2$(20mol%)t arget under argon gas. In this study, the Taguchi experimental method was applied in order to obtain optimum conditions with reduced number of experiments and to control numerous variables effectively. At the same time this method can assure the reproducibility of experiments. Optimum conditions for film formation obtained by above method were target RF power of 200 W. substrate RF power of 20 W, Ar pressure of 5 mTorr. sputtering time of 20 min.. respectively. The phase of specimen was determined by using XRD and TEM. The compositional analysis of specimen was performed by XPS test. In order to measure the thermal resistivity of deposited specimen, annealing test was carried out at $300^{\circ}C$ and $600^{\circ}C$. For the account of void fraction in thin film, the Bruggeman EMA(Effective Medium Approximation) method was applied using the optical data obtained by Spectroscopic Ellipsometry. According to the results of this work, the existence of strong interaction between bias voltage and sputtering time was confirmed for refractive index value. According to XRD and TEM analysis of specimen, the film structure formed in bias voltage resulted in more refined structures than that formed without bias voltage. But excess bias voltage resulted in grain growth in thin film. It was confirmed that the application of optimum bias voltage increased film density by reduction of void fraction of about 3.7%.

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Development and Application of Electrode for a New Secondary Aqueous Cell (새로운 수용성 2차 전지용 전극의 개발과 응용)

  • Hwang, Kum-Sho
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.41 no.2
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    • pp.165-170
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    • 2005
  • Al-Zn alloy/$MnO_2$, seawater cell was considered as a primary aqueous cell with an average voltage range from 1.0 to 1.1V, and the electrolyte of seawater was uptaken into the cell. Eventually, the capacity of its usage will be used for long-term. However, the more use of this cell, the higher corrosion phenomenon of the electrode occurred. Due to its corrosion phenomenon, one main default has been observed with gradual decrease during a discharge process. In this research, a common-used active material for anode was $LiNiO_2$. An active material for cathode, $Zn_{X}FeS_2$ was synthesized in high temperature by uptaken a small amount of 1.3 wt% of ZnS into $FeS_2$, one of the transition-metal dichalcogenides in high temperature. Consequently, based on their usages shown above, this secondary aqueous lithium cell could be more developed. This cell was shown as remarkable charge/discharge performance during the charge/discharge processes. This cathode with active material was given a considerable efficiency of inserting $Li^+$ ions. Moreever, in accordance with the characteristic of the crystal structure for $Zn_{x}FeS_2$, a small amount of ZnS was added which made it possible to reduce prominently velocity of corrosion during the charge/discharge cycle. By applying those merits, Al-Zn alloy/$MnO_2$ seawater cell will be used as a fundamental data in order to transform into a secondary aqueous cell.