• Title/Summary/Keyword: $ZnO_{1-x}S_x$

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ALD를 이용하여 살펴본 CdSe/CdS Quantum Dot-sensitized Solar Cell에서의 TiO2 Passivation 효과

  • Park, Jin-Ju;Lee, Seung-Hyeop;Seol, Min-Su;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.370-370
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    • 2011
  • ZnO 나노 라드 위에 Quantum dot을 형성하고 최종적으로 TiO2를 Atomic Layer Deposition방법으로 증착하여, 그 passivation 효과가 solar cell의 효율에 미친 영향에 대한 실험을 진행하였다. 암모니아 솔루션을 이용한 Hydrothermal 방법으로 수직한 1차원 형태의 ZnO 나노라드를 TCO 기판 위에 성장시킨다. 여기에 잘 알려진 SILAR와 CBD 방법으로 CdS, CdSe 양자점을 증착한다. 그리고 amorphous TiO2로 표면을 덮는 과정을 거치는데, TiO2가 좁은 간격으로 형성된 ZnO라드 구조 위에서 균일하고 정밀하게 증착되도록 하기 위해 Atomic Layer Deposition을 이용하였다. 사용된 precursor는 Titanium isopropoxide와 H2O이며, 실험상에서 0~5 nm 두께의 TiO2 박막을 형성해 보았다. 다양한 분석 방법을 통해 TiO2/QDs/ZnO의 shell-shell-core 구조를 조사했다. (Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), and X-ray Photoelectron Spectroscopy (XPS)). 이를 solar cell에 적용하고 I-V curve를 통해 그 효율을 확인하였으며, Electrochemical Impedance Spectroscopy (EIS)를 통해서 재결합 측면에서 나타나는 변화 양상을 확인하였다.

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Dielectric and Magnetic Properties of Co-doped Ni0.65Zn0.35Fe2O4 Thin Films Prepared by Using a Sol-gel Method

  • Lee, Hyun-Sook;Lee, Jae-Gwang;Baek, K.S.;Oak, H.N.
    • Journal of Magnetics
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    • v.8 no.4
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    • pp.138-141
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    • 2003
  • $Ni_{0.65}Zn_{0.35}Fe_2O_4$thin films were prepared by using a sol-gel method. Their crystallographic, dielectric and magnetic properties were investigated as a function of Cu contents by means of an X-ray diffractometer (XRD), X-ray reflectivity, LCZ meter (NF2232), a vibrating sample magnetometer (VSM), and an atomic force microscope (AFM). From typical C-V measurements for $Ni_{0.65}Zn_{0.35}Fe_2O_4$ thin films on p-type silicon substrate, the surface charge density was calculated as 1.4 ${\mu}$C/$m^2$. The dielectric constant evaluated from the capacitance at the accumulation state was 28. The high $H_{c}$ and low $M_{sat}$ at x=0.0 and 0.1 were due to the growth of the ${\alpha}$-$Fe_2O_3$ phase having antiferromagnetic properties. The rapidly decreased $H_{c}$ and increased $M_{sat}$ at x=0.2 and 0.3 can be explained that the ${\alpha}$-$Fe_2O_3$ phases have completely disappeared at x=0.3 and so, non-magnetic defects are minimized. The $M_{sat}$ was slightly decreased and the $H_{c}$ was increased above at x=0.3 because the increase of grain boundary due to smaller grain size acts as defects during magnetization process.

Hydrogen sulfide gas sensing mechanism study of ZnO nanostructure and improvement of sensing property by surface modification

  • Kim, Jae-Hyeon;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.450-450
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    • 2011
  • This study reports the hydrogen sulfide gas sensing properties of ZnO nanorods bundle and the investigation of gas sensing mechanism. Also the improvement of sensing properties was also studied through the application of ZnO heterstructured nanorods. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and ZnO nano-heterostructures were prepared by sonochemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. The gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. In order to improve the gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by deposition of CuO, Au on the ZnO nanorods bundle. These heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with target gas.

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Fabrication of CuO/ZnO Nano-heterostructure by Photochemical Method and Their H2S Gas Sensing Properties

  • Kim, Jae-Hyun;Yong, Ki-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.359-359
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    • 2011
  • This study reports the H2S gas sensing properties of CuO / ZnO nano-hetero structure bundle and the investigation of gas sensing mechanism. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and CuO / ZnO nano-heterostructures were prepared by photo chemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. In order to improve the H2S gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by photo-chemical deposition of CuO on the ZnO nanorods bundle. The furnace type gas sensing system was used to characterize sensing properties with diluted H2S gas (50 ppm) balanced air at various operating temperature up to 500$^{\circ}C$. The H2S gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. Photo-chemically fabricated CuO/ZnO heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with H2S gas.

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Epitaxial Growth of ZnO Thin Films on (100) $LaAlO_3$ Substrate by Pulsed Laser Deposition (PLD를 이용한 (100) $LaAlO_3$ 기판위의 ZnO 에피택셜 박막 성장)

  • Cho, Dae-Hyung;Kim, Ji-Hong;Moon, Byung-Moo;Jo, Yeong-Deuk;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.256-256
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    • 2008
  • We report epitaxial growth of ZnO thin films on (100) single-crystalline $LaAlO_3$ (LAO) substrates using pulsed laser deposition (PLD) at different substrate temperatures (400~$800^{\circ}C$). The structural and electrical properties of the films have been investigated by means of X-ray diffraction (XRD), atomic force microscope (AFM), transmission line method (TLM). The poly-crystalline of $\alpha$- and c-axis oriented ZnO film was formed at lower deposition temperature ($T_s$) of $400^{\circ}C$. At higher $T_s$, however, the films exhibit single-crystalline of $\alpha$-axis orientation represented by ZnO[$\bar{1}11$ || LAO <001>. The electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for $\alpha$-axis oriented ZnO films.

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Electromagnetic wave absorption characteristics in Ni-Mn-Zn Ferrite with varying Mn content and applied magnetic field (Ni-Mn-Zn ferrite의 합성과 Mn의 치환량 및 인가자장에 따른 전자기파 흡수 특성 연구)

  • Ji-Hye Lee;Sang-Min Lee;Young-Min Kang
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.6
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    • pp.294-302
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    • 2023
  • Ni-Mn-Zn ferrite, Ni0.5-xMnxZn0.5Fe2O4 (0 ≤ x ≤ 0.5), was synthesized using the sol-gel method to investigate the crystal structure, microstructure, magnetic properties, high-frequency characteristics, and electromagnetic (EM) wave absorption characteristics as a function of Mn substitution. As the Mn content increased, a continuous decrease in saturation magnetization (MS) was observed with little change in coercivity (HC). Samples for each composition (x) exhibited strong EM wave absorption performance with first and second strong EM wave absorption regions satisfying minimum reflection loss, RLmin < -40 dB in the 1.5~2.5, 6~11 GHz range, respectively. The EM wave absorption in Ni-Mn-Zn ferrite depends on magnetic loss, and adjusting µ' and µ'' spectra by Mn substitution or H field allows control of the EM wave absorption frequency.

In-situ XPS Study of Core-levels of ZnO Thin Films at the Interface with Graphene/Cu

  • Choi, Jinsung;Jung, Ranju
    • Journal of the Korean Physical Society
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    • v.73 no.10
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    • pp.1546-1549
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    • 2018
  • We have investigated core-levels of ZnO thin films at the interface with the graphene on Cu foil using in-situ X-ray Photoelectron Spectroscopy (XPS). Spectral evolution of C 1s, Zn 2p, and O 1s are observed in real time during RF sputtering deposition. We found binding energy (BE) shifts of Zn 2p and 'Zn-O' state of O 1s depending on ZnO film thickness. Core-levels BE shifts of ZnO will be discussed on the basis of electron transfer at the interface and it may have an important role in the electronic transport property of the ZnO/graphene-based electronic device.

The Study on Chemical Durable Zinc-phosphate Glasses with $B_2$$O_3$Addition ($B_2$$O_3$첨가에 따른 Zinc Phosphate Glasses의 화학적 안정화)

  • 류봉기;이병철;이성욱;황차원;이종성
    • Journal of the Korean Ceramic Society
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    • v.38 no.6
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    • pp.593-595
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    • 2001
  • Zinc-phosphate glasses에 B$_2$O$_3$를 도입하여 borate, phosphate, boro-phosphate networks가 혼재되어 있는 highly cross-linked structures를 형성시켜 Phosphate glasses의 화학적 안정화를 검토하였다. Raman 측정 결과 B$_2$O$_3$와 P$_2$O$_{5}$는 잘 혼화된 polynary networks를 이루고 있으며, 이렇게 하여 증진된 구조적 cross-linking에 의하여 xB$_2$O$_3$.(1-x)Zn$_2$P$_2$O$_{7}$ glasses의 T$_{g}$, T$_{d}$는 증가하였고 동시에 CTE는 감소하는 결과를 가져왔다.

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Mossbauer Study of nano-sized (Li_{0.5x}Fe_{0.5x}Zn_{1-x})Fe_2O_4$ particles

  • J. C. Sur;Kim, T. S.;T. Y. Ha;Lee, J. K.;S. H. Gee;Y. K. Hong;Park, M. H.;D. W. Erickson;P. J. Lamb
    • Proceedings of the Korean Magnestics Society Conference
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    • 2002.12a
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    • pp.92-93
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    • 2002
  • The substituted lithium ferrites combine useful ferromagnetic properties with high Curie temperature ranging from 55$0^{\circ}C$ to 85$0^{\circ}C$, [1] high saturation magnetization, [2] and low microwave dielectric loss.[3] Saturation magnetization of (Z $n_{1-x}$ F $e_{x}$)A[L $i_{0.5x}$F $e_{ 2-0.5x}$]$_{B}$ $O_4$ increased with zinc concentration, followed by a decrease at x = 0.7.[4] This is attributed to a dilution of the A-site with zinc which initially causes an increase in saturation magnetization due to the dominance of the B-site. (omitted)d))d)d))

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