• 한국세라믹학회지
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• 제30권6호
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• pp.499-509
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• 1993

Structures of hematite(${\alpha}$-Fe2O3), Ba-ferrite(BaFe12O19) and Zn2Y(Ba2Zn2Fe12O22) were studied by powder X-ray diffraction(XRD) method. Powder XRD patterns of the ferrites were analyzed with the Rietveld method, and the final refined R-factors were RWP<0.01 and RI<0.03. The lattice parameters refined with hexagonal crystal system were a=5.0342${\AA}$, c=13.746${\AA}$ for hematite, a=5.8928${\AA}$, c=23.201${\AA}$ for Ba-ferrite, and a=5.8763${\AA}$, c=43.567${\AA}$ for Zn2Y. In the hematite, the oxygen parameter is 0.3072 and the Fe-O distances in FeO6octahedron are 1.941${\AA}$ and 2.118${\AA}$, close to the single crystal data of Blake et al.. In the Ba-ferrite, the Fe atom in oxygen trigonal bipyramid is displaced 0.155${\AA}$ away from the BaO3 mirror plane into 4e position. In the Zn2Y, 75% of Zn is located at the oxygen terahedral site in S-block.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1260-1261
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• 2008

Aluminium doped zinc oxide (ZnO:Al) thin film has emerged as one of the most promising transparent conducting electrode in flat panel displays(FPD) and in photovoltaic devices since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r.f. magnetron sputtering method. Wide ranges of bias voltage, -30V${\sim}$45V, was applied to the growing films as an additional energy instead of substrate heating, and the effect of positive and negative bias on the film structure and electrical properties of ZnO:Al films was studied and discussed. The results showed that a bias applied to the substrate during sputtering contributed to the improvement of electrical properties of the film by attracting ions and electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO film on the substrate, resulting in significant variations in film structure and electrical properties. The film deposited on the PET substrate at r. f. discharge power of 200 W showed the minimum resistivity of about $2.4{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 87%.

• 한국결정성장학회지
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• 제22권1호
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• pp.1-4
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• 2012

O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an $Al_2O_3$ substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rate (59 nm/min), and by the hillocks on the surface after etching. Zn-polar ZnO was grown on a GaN/$Al_2O_3$ substrate, which was confirmed by a fast growth rate (550 nm/hr), a slow etching rate (28 nm/min), and by pits on the surface after etching. Results from the present study show that it is possible to use DC-sputtering to grow ZnO film with the same polarity as other epitaxial growth methods.

• 한국세라믹학회지
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• 제12권1호
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• pp.23-28
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• 1975

The object of this study is to find the optimum conditions for crystal growth and kinds of crystal in ZnO-Al2O3-SiO2 glass composition. At first, the base glass composed of ZnO (44.7%), Al2O3(14.0%) and SiO2(41.3%) was melted in propane gas furnace at 1450-150$0^{\circ}C$ for an hour, and then it was poured into the stainless steel mould heated previously at $600^{\circ}C$ to obtain the thin glass test piece. Four crystal forms from base glass such as stuffed keatite, zinc orthosilicate, zinc aluminosilicate, and cristobalite were crystallized during heat treatment between 80$0^{\circ}C$ and 110$0^{\circ}C$. For the investigation of crystal growth, X-ray diffractometer and thermal differential analysis were used and the growth rate of the four crystal forms were obtained by the method of Archimedes specific gravity and intensity comparison of X-ray diffraction peak. The results obtained were as follows. 1) Stuffed keatite peaks which started to appear after two hours at 80$0^{\circ}C$ were maximum after 11 hours and this crystal breaks down to willemite irreversibly at about 100$0^{\circ}C$. 2) Development of gahnite started at 85$0^{\circ}C$ and increased with temperature growth. 3) Stuffed keatite which had been transformed slowly into willemite at 100$0^{\circ}C$ was decreased with time and willemite increased until four hours. 4) Cristobalite began to be developed after treatment of 110$0^{\circ}C$.

• Membrane and Water Treatment
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• 제6권4호
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• pp.309-321
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• 2015

We report in this study the synthesis of mixed matrix reverse osmosis membranes by interfacial polymerization (IP) of thin film nanocomposite (TFNC) on porous polysulfone supports (PS). This paper investigates the synthesis of ZnO nanoparticles (NPs) using the sol-gel processing technique and evaluates the performance of mixed matrix membranes reached by these aerogel NPs. Aqueous m-phenyl diamine (MPD) and organic trimesoyl chloride (TMC)-NPs mixture solutions were used in the IP process. The reaction of MPD and TMC at the interface of PS substrates resulted in the formation of the thin film composite (TFC). NPs of ZnO with a size of about 25 nm were used for the fabrication of the TFNC membranes. These membranes were characterized and evaluated in comparison with neat TFC ones. Their performances were evaluated based on the water permeability and salt rejection. Experimental results indicated that the NPs improved membrane performance under optimal concentration of NPs. By changing the content of the filler, better hydrophilicity was obtained; the contact angle was decreased from $74^{\circ}$ to $32^{\circ}$. Also, the permeate water flux was increased from 26 to 49 L/m2.h when the content of NPs is 0.1 (wt.%) with the maintaining of lower salt passage of 1%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1264-1265
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• 2008

PLD 방법으로 undoped ZnO박막을 성장 온도별로 성장하여 박막의 광학적 특성이 변화되는 것을 관찰하였다. undoped ZnO박막은 $Al_2O_3(0001)$기판을 이용하였고, pulsed laser deposition(PLD)을 이용하여 증착을 하였다. 이때 파장이 355nm인 Nd:YAG 레이저를 이용하였고 레이저의 에너지 밀도는 1.4 $J/cm^2$ 이었다. 구조적 광학적 특성을 관측하기 위하여 XRD, SEM, PL 등을 측정하였다. PL 측정 결과 성장 온도가 증가함에 따라 undoped ZnO박막의 광학적 특성이 좋아지는 것을 관찰할 수 있었다. XRD 측정 결과도 온도별 FWHM과 intensity ratio가 점차 좋아지는 것을 볼 수 있었다.

• 한국세라믹학회지
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• 제42권5호
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• pp.333-337
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• 2005

In order to improve the performance of green emitting phosphors for plasma display panel, the $Zn_2SiO_4:Mn,Al$ phosphors were synthesized using sol-gel technique and studied using SEM and VUV photoluminescence spectrometer. pH values of the starting solutions (pH = 0.5$\~$2.34) were controled by HCl as the catalysis of hydrolysis and wet gels were dried at $80^{\circ}C$ and $120^{\circ}C$, respectively. We investigated the effects of pH and drying temperatures during sol-gel processes. The results indicated that the phosphor prepared at pH = 1 showed the maximum emission intensity in both drying conditions and the effect of pH of the starting solution on morphology were increased with particle size as HCl and phosphor dried at high temperature showed more spherical and smaller particles than at low.

• 한국세라믹학회지
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• 제42권5호
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• pp.352-358
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• 2005

By calcining at $750^{\circ}C$ for 30 h in $O_2$ stream after milling, $LiNi_{1-y}M_yO_2(M=Zn^{2+},\;Al^{3+}$, and $Ti^{4+}$, y = 0.005, 0.01, 0.025, 0.05, and 0.1) were synthesized and their electrochemical properties were investigated. All the samples had R3m structure. $LiNi_{1-y}Zn_yO_2$ (y = 0.025, 0.05, and 0.1) contained ZnO anuor $Li_2ZnO_2$ as impurities. Among the samples substituted with the same element, the samples with relatively large value of $I_{003}/I_{104}$ and the smallest R-factor had the largest first discharge capacity and good cycling performance. $LiNi_{0.975}A1_{0.025}O_2$ had the largest first discharge capacity (172.5 mAh/g) and good cycling performance (about $89.4\%$ of the first discharge capacity at the 20th cycle). This sample had the largest value of $I_{003}/I_{104}$ and the smallest R-factor among all the samples. In addition, the particles of this sample were finer and their size was more homogeneous than the other samples. $LiNi_{0.95}A1_{0.05}O_2$ had relatively large first discharge capacity 150.4 mAh/g and good cycling performance.

• 마이크로전자및패키징학회지
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• 제16권4호
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• pp.17-22
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• 2009

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.

• 한국결정성장학회지
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• 제8권4호
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• pp.587-591
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• 1998

마이크로 웨이브를 보조 여기원으로 사용한 직류 magnetron 스퍼터링법으로 Aluminum이 2wt% 포함되어 있는 Zn:Al 합금타겟을 사용하여 AZO(Aluminum doped zinc oxide) 투명 전도막을 제막하였고 그 영향을 조사하였다. 타겟인가 전압이 420V에서 증착된 막의 투과율, 비저항 그리고 증착속도는 각각 50~70%, $5.5{\times}10^{-3}{\Omega}$cm 그리고 6,000$\AA\textrm{mm}^2$/J 이었다. 이 막을 40$0^{\circ}C$에서 30분간의 열처리하면 광투과율은 80% 이상으로 열처리전에 비해 향상되었으며 전도도는 2배 이상 향상되어 비저항값이 $2.0{\times}10^{-3}{\Omega}$cm인 막을 얻을 수 있었다.