• Title/Summary/Keyword: $WO_3$-$SnO_2$

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Fabrication and Characterization of Portable Electronic Nose System for Identification of CO/HC Gases (CO/HC 가스 인식을 위한 소형 전자코 시스템의 제작 및 특성)

  • Hong, Hyung-Ki;Kwon, Chul-Han;Yun, Dong-Hyun;Kim, Seung-Ryeol;Lee, Kyu-Chung;Kim, In-Soo;Sung, Yung-Kwon
    • Journal of Sensor Science and Technology
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    • v.6 no.6
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    • pp.476-482
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    • 1997
  • A portable electronic nose system has been fabricated and characterized using an oxide semiconductor gas sensor array and pattern recognition techniques such as principal component analysis and back-propagation artificial neural network. The sensor array consists of six thick-film gas sensors whose sensing layers are Pd-doped $WO_{3}$, Pt-doped $SnO_{2}$, $TiO_{2}-Sb_{2}O_{5}-Pd$-doped $SnO_{2}$, $TiO_{2}-Sb_{2}O_{5}-Pd$-doped $SnO_{2}$ + Pd coated layer, $Al_{2}O_{3}$-doped ZnO and $PdCl_{2}$-doped $SnO_{2}$. The portable electronic nose system consists of an 16bit Intel 80c196kc as CPU, an EPROM for storing system main program, an EEPROM for containing optimized connection weights of artificial neural network, an LCD for displaying gas concentrations. As an application the system has been used to identify 26 carbon monoxide/hydrocarbon (CO/HC) car exhausting gases in the concentration range of CO 0%/HC 0 ppm to CO 7.6%/HC 400 ppm and the identification has been successfully demonstrated.

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Phase Cooperation Between Mo-V-O and Metal Oxide in Selective Oxidation of Acrolein (아크롤레인 선택 산화반응에서 Mo-V-O와 금속산화물의 상간협동)

  • Park, D.W.;Na, S.E.;Kim, K.H.;Lee, W.H.;Chung, J.S.
    • Applied Chemistry for Engineering
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    • v.5 no.2
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    • pp.327-336
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    • 1994
  • The synergistic effects in mechanical mixture catalysts of Mo-V-O and metal oxide were investigated for the selective oxidation of acrolein. The metal oxides used are $SnO_2$, ${\alpha}-Sb_2O_4$, $WO_3$, ${\alpha}-Al_2O_3$, CuO, $MnO_2$, $Cu_2O$, MgO, CoO, and ZnO. Mechanical mixtures of Mo-V-O plus $SnO_2$ or ${\alpha}-Sb_2O_4$ had resulted in higher conversion of acrolein and higher yield of acrylic acid than Mo-V-O. The origin of the synergy is attributed to the cooperation of Mo-V-O and $SnO_2$ or ${\alpha}-Sb_2O_4$, in which $SnO_2$ or ${\alpha}-Sb_2O_4$ forms dissociated oxygens at their oxygen vacancies and transports them to Mo-V-O. $Cu_2O$, MgO, CuO, and $MnO_2$, increased conversion of acrolein but decreased yield of acrylic acid. CoO and ZnO inhibited the catalytic performance of Mo-V-O. The different role of these metal oxides is explained in terms of their oxidation-reduction properties.

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Abnormal current-voltage characteristics of $SnO_2$ oxide semiconductor and their application to gas sensors ($SnO_2$ 산화물 반도체의 비정상적 전류 - 전압 특성과 가스센서로의 응용)

  • Lee Kyu-chung;Yoon Ho-Kun;Hur Chang-Wu
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.7
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    • pp.1436-1441
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    • 2004
  • Abnormal current-voltage characteristics of an oxide semiconductor have been investigated and a novel method of detecting reducing gases utilizing self-heating mechanism of sensing layer without an additional heater has been developed. Planar-type sensors based on WO3-doped SnO2 were fabricated using a screen-printing technique. The applied voltage across the sensing layer caused heating of the sensing layer and the current abruptly varied upon exposure to a gas mostly as a result of surface reactions. A unique and fascinating aspect of the gas sensing scheme is that no additional heater is necessary for detection. The new sensing method has been applied to C2H5OH gas in this preliminary work.

Thick-film ammonia gas sensor with high sensitivity and excellent selectivity

  • Lee, Kyuchung;Ryu, Kwang-Ryul;Hur, Chang-Wu
    • Journal of information and communication convergence engineering
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    • v.2 no.1
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    • pp.22-25
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    • 2004
  • A highly sensitive ammonia gas sensor using thick-film technology has been fabricated and examined. The sensing material of the gas sensor is FeOx-$WO_{3}-SnO_{2}$ oxide semiconductor. The sensor exhibits resistance increase upon exposure to low concentration of ammonia gas. The resistance of the sensor is decreased, on the other hand, for exposure to reducing gases such as ethyl alcohol, methane, propane and carbon monoxide. A novel method for detecting ammonia gas quite selectively utilizing a sensor array consisting of an ammonia gas sensor and a compensation element has been proposed and developed. The compensation element is a Pt-doped $WO_{3}-SnO_{2}$gas sensor which shows opposite direction of resistance change in comparison with the ammonia gas sensor upon exposure to ammonia gas. Excellent selectivity has been achieved using the sensor array having two sensing elements.

Fabrication and Characterization of Portable Electronic Nose System using Gas Sensor Array and Artificial Neural Network (가스센서 어레이와 인공 신경망을 이용한 소형 전자코 시스템의 제작 및 특성)

  • 홍형기;권철한;윤동현;김승렬;이규정
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.99-102
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    • 1997
  • An electronic nose system is an instrument designed far mimicking human olfactory system. It consists generally of gas (odor) sensor array corresponding to olfactory receptors of human nose and artificial neural network pattern recognition technique based on human biological odor sensing mechanism. Considerable attempts to develop the electronic nose system have been made far applications in the fields of floods, drinks, cosmetics, environment monitoring, etc. A portable electronic nose system has been fabricated by using oxide semiconductor gas sensor array and pattern recognition technique such as principal component analysis (PCA) and back propagation artificial neural network The sensor array consists of six thick film gas sensors whose sensing layers are Pd-doped WO$_3$ Pt-doped SnO$_2$ TiO$_2$-Sb$_2$O$_3$-Pd-doped SnO$_2$ TiO$_2$-Sb$_2$O$_{5}$-Pd-doped SnO$_2$+Pd filter layer, A1$_2$O$_3$-doped ZnO and PdCl$_2$-doped SnO$_2$. As an application the system has been used to identify CO/HC car exhausting gases and the identification has been successfully demonstrated.d.

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Fabrication and characterization of a small-sized gas identification instrument for detecting LPG/LNG and CO gases

  • Lee Kyu-Chung;Hur Chang-Wu
    • Journal of information and communication convergence engineering
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    • v.4 no.1
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    • pp.18-22
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    • 2006
  • A small-sized gas identification system has been fabricated and characterized using an integrated gas sensor array and artificial neural-network. The sensor array consists of four thick-film oxide semiconductor gas sensors whose sensing layers are $In_{2}O_{3}-Sb_{2}O_{5}-Pd-doped\;SnO_2$ + Pd-coated layer, $La_{2}O_{5}-PdCl_{2}-doped\;SnO_2,\;WO_{3}-doped\;SnO_{2}$ + Pt-coated layer and $ThO_{2}-V_{2}O_{5}-PdCl_{2}\;doped\;SnO_{2}$. The small-sized gas identification instrument is composed of a GMS 81504 containing an internal ROM (4k bytes), a RAM (128 bytes) and four-channel AD converter as MPU, LEDs for displaying alarm conditions for three gases (liquefied petroleum gas: LPG, liquefied natural gas: LNG and carbon monoxide: CO) and interface circuits for them. The instrument has been used to identify alarm conditions for three gases among the real circumstances and the identification has been successfully demonstrated.

Gas sensing characteristics of Co3O4 thick films with metal oxides (금속산화물을 첨가한 Co3O4 후막의 가스 감지특성)

  • Jo, Chang-Yong;Park, Ki-Cheol;Kim, Jeong-Gyoo
    • Journal of Sensor Science and Technology
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    • v.18 no.1
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    • pp.54-62
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    • 2009
  • ${Co_3}{O_4}$ and ${Co_3}{O_4}$-based thick films with additives such as ${Co_3}{O_4}-{Fe_2}{O_3}$(5 wt.%), ${Co_3}{O_4}-{SnO_2}$ (5 wt.%), ${Co_3}{O_4}-{WO_3}$(5 wt.%) and ${Co_3}{O_4}$-ZnO(5 wt.%) were fabricated by screen printing method on alumina substrates. Their structural properties were examined by XRD and SEM. The sensitivities to iso-${C_4}H_{10}$, $CH_4$, CO, $NH_3$ and NO gases were investigated with the thick films heat treated at $400^{\circ}C$, $500^{\circ}C$ and $600^{\circ}C$. From the gas sensing properties of the films, the films showed p-type semiconductor behaviors. ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film heat treated at $600^{\circ}C$ showed higher sensitivity to i-${C_4}H_{10}$ and CO gases than other thick-films. ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film heat treated at $600^{\circ}C$ showed the sensitivity of 170 % to 3000 ppm iso-${C_4}H_{10}$ gas and 100 % to 100 ppm CO gas at the working temperature of $250^{\circ}C$. The response time to i-${C_4}H_{10}$ and CO gases showed rise time of about 10 seconds and fall time of about $3{\sim}4$ minutes. The selectivity to i-${C_4}H_{10}$ and CO gases was enhanced in the ${Co_3}{O_4}-{SnO_2}$(5 wt.%) thick film.

The Study on the Luminescent Element of Electro Chromisn in Polyelectrolyte (고분자전해질 Electro Chromism의 발광소자에 관한 연구)

  • 국상훈;고두석
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.2 no.1
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    • pp.65-74
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    • 1988
  • For experiment, we made the electro chemical display element with the NESA glass of display electrode which had low resistance. Density of injection charge, optical density and response characteristics were observed through coloring and achromatizing phemomena in the display element As optical electric chemical reaction was occured in $WO_3$ and cell, it was possible to repeat colouring and achromatizing, and the colouring characteristics was good. And the higher colouring and achromatizing voltage, the lower resistance of electrode and the thinner $WO_3$film was, the better response characteristics. With analyzing phenomena of electro chromism, we could find the possibility of practical use of the coloring and achromatizing element for clock, instrument and guide plate.

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Chemiresistive Sensor Array Based on Semiconducting Metal Oxides for Environmental Monitoring

  • Moon, Hi Gyu;Han, Soo Deok;Kang, Min-Gyu;Jung, Woo-Suk;Jang, Ho Won;Yoo, Kwang Soo;Park, Hyung-Ho;Kang, Chong Yun
    • Journal of Sensor Science and Technology
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    • v.23 no.1
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    • pp.15-18
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    • 2014
  • We present gas sensing performance based on $2{\times}2$ sensor array with four different elements ($TiO_2$, $SnO_2$, $WO_3$ and $In_2O_3$ thin films) fabricated by rf sputter. Each thin film was deposited onto the selected $SiO_2$/Si substrate with Pt interdigitated electrodes (IDEs) of $5{\mu}m$ spacing which were fabricated on a $SiO_2$/Si substrate using photolithography and dry etching. For 5 ppm $NO_2$ and 50 ppm CO, each thin film sensor has a different response to offers the distinguishable response pattern for different gas molecules. Compared with the conventional micro-fabrication technology, $2{\times}2$ sensor array with such remarkable response pattern will be open a new foundation for monolithic integration of high-performance chemoresistive sensors with simplicity in fabrication, low cost, high reliablity, and multifunctional smart sensors for environmental monitoring.

Fabrication of oxide semiconductor thin film gas sensor array (산화물 반도체 박막 가스센서 어레이의 제조)

  • 이규정;김석환;허창우
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.4 no.3
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    • pp.705-711
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    • 2000
  • A thin film oxide semiconductor micro gas sensor array which shows only 60 mW of power consumption at an operating temperature of $300^{\circ}C$ has been fabricated using microfabrication and micromachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double-layer structure of $0.1\mum\; thick\; Si_3N_4 \;and\; 1 \mum$ thick phosphosilicate glass (PSG) prepared by low-pressure chemical-vapor deposition (LPCVD) and atmospheric-pressure chemical-vapor deposition (APCVD), respectively. The sensor array consists of such thin film oxide semiconductor sensing materials as 1 wt.% Pd-doped $SnO_2,\; 6 wt.% A1_2O_3-doped\; ZnO,\; WO_3$/ and ZnO. Baseline resistances of the four sensing materials were found to be stable after the aging for three days at $300^{\circ}C$. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials.

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