• Korean Journal of Microbiology
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• v.27 no.2
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• pp.147-154
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• 1989

Vibrio vulnificus Lipopolysaccharide (LPS) was extracted, performed chemical analysis, tested its biological activities, and compared to those of Escherichia coli LPS and Salmonella typhimurium LPS. The lethal activity of V. vulnificus LPS was 138.6138.6 mg/kg in mouse, but this was lower than thowe of E. coli LPS (56.3 mg/kg) and S. typhimurium LPS (37.5 mg/kg). The result of fatty acid analysis showed that V. vulnificus LPS had more saturated fatty acid than E. coli LPS and S. typhimurium LPS. Above results indicated that V. vulnificus LPS did not have much effect on the lethality. The results of biological responses of enzymes and blood cells by LPSs showed that V. vulnificus LPS had slightly greater activity than E. coli LPS and S. typhimurium LPS. V. vulnificus LPS was recommendavle for stimulant on interferon induction because of adequate stimulation and safety for host and cell lines.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.289-290
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• 2014

3kWh 급 가정용 Energy Storage System (ESS)는 배터리 팩의 수명 관리상 배터리팩의 전압을 48V의 공칭전압으로 설계하는 것이 일반적이다. 상용 변압기를 사용하여 48V의 낮은 직류 링크 전압을 갖는 ESS를 220V 교류 계통과 연계하기 위하여는 30V 정도의 낮은 인버터 출력단 교류전압을 220V로 승압하여야 한다. 이 경우 ESS의 교류 측 전압 및 전류 파형을 정형적으로 만들어주기 위한 LC 필터 요소로서 저전압/대전류 용 필터 인덕터를 제작하는 것이 쉽지 않다. 다시 말해, 성능이 보장된다면 교류 측 LC 필터를 상용 변압기의 고전압 측에 설치하는 것이 바람직하다. 본 논문에서는 상용 변압기를 사용하는 가정용 ESS의 교류 측 필터의 설치 위치에 따른 설계 및 제작 시 고려 사항과 특성에 대하여 연구하였다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.789-794
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• 1986

The current-voltage characteristics of ion-implanted GaAs MESFET's have been simulated by using the velocity saturation model. Using this model, a MESFET with threshold voltage of -0.5V and transconductance of 460 mS/mm is designed. To implement high transconductance MESFET's, low energy ion-implantation (20 keV) and RTP(Rapid Thermal Process) activation ($575^{\circ}C$, 5sec) processes are required.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.6
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• pp.62-66
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• 1982

A method finding out routability for unrouted signal lines and rerouting those which are turned out to be able to route in layout design of LSI is described. In this paper the problems of finding two-disjoint Paths represented by an undirected graph G=(V,E), where V,E are sets of vertices and edges respectively, are studied. The existence of two-disjoint paths from s1, to t1, (called P1) and from S2 to T2 (called P2) indicated by the four vertices on the graph s1, t1, s2, t2 $\in$ V means that two distinct signal lines exist in layout design. It turns out that the proposed time complexity in the algorithm is O (IVI x IEI).

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.156-156
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• 2003

수평 전기로에서 ZnIn$_2$S$_4$ 다결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 2nIn2S4단결정 박막을 반절연성 GaAs(100)기판 위에 성장시켰다. ZnIn2S4 단결정 박막은 증발원의 온도를 610 $^{\circ}C$, 기판의 온도를 450 $^{\circ}C$로 성장시켰고 성장 속도는 0.5 $\mu\textrm{m}$/hr로 확인되었다. ZrIn2S4 단결정 박막의 결정성의 조사에서 10 K에서 광발광(photoluminescence) 스펙트럼이 433 nm (2.8633eV)에서 exciton emission스펙트럼이 가장 강하게 나타났으며, 또한 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 133 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Pauw방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 8.51$\times$$10^{17}$ electron/$cm^{-3}$ 291 $\textrm{cm}^2$/v-s였다. ZnIn2S4 단결정 박막의 광전류 단파장대 봉우리들로부터 10 K에서 측정된 $\Delta$Cr(crystal field splitting)은 0.1678 eV, $\Delta$So(spin orbit coupling)는 0.0148 eV였다. 10 K의 광발광 측정으로부터 고품질의 결정에서 볼 수 있는 free exciton 과 매우 강한 세기의 중성 주개 bound exciton등의 피크가 관찰되었다. 이때 중성 주개 bound exciton의 반치폭과 결합 에너지는 각각 9 meV와 26 meV 였다. 또한 Haynes rule에 의해 구한 불순물의 활성화 에너지는 130 meV 였다.다.

• Proceedings of the Korean Geotechical Society Conference
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• 2006.03a
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• pp.562-571
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• 2006

Mean shear wave velocity of the upper 30m $(V_s30)$ used as the current site classification criterion for determining seismic design ground motions in Korea was established based on the typical depth of site investigations in western US, in which the depth to bedrock is much deeper than that in Korea. In this study, to establish appropriate site classification system for site conditions of Korea, site investigations including in-situ seismic tests to determine shear wave velocity $(V_s)$ were carried out at total 72 sites in Korean peninsula. The mean $V_s's$ to the depths of 5m, 10m, 15m, 20m and 25m together with the $V_s30$ at the testing sites were determined, and the correlation between the mean $V_s$ to a depth shallower than 30m and the $V_s30$ was drawn and suggested for the efficient seismic site classification in Korea. The proposed correlation could be utilized for the seismic design in case of the $V_s$ profiles shallower than 30 m in depth. The correlation in this study, nevertheless, requires further modification by means of the accumulation of various site data in Korea.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.60-68
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• 2008

This work describes a re-configurable 10MS/s to 100MS/s, low-power 10b two-step pipeline ADC operating at a power supply from 0.5V to 1.2V. MOS transistors with a low-threshold voltage are employed partially in the input sampling switches and differential pair of the SHA and MDAC for a proper signal swing margin at a 0.5V supply. The integrated adjustable current reference optimizes the static and dynamic performance of amplifiers at 10b accuracy with a wide range of supply voltages. A signal-isolated layout improves the capacitor mismatch of the MDAC while a switched-bias power-reduction technique reduces the power dissipation of comparators in the flash ADCs. The prototype ADC in a 0.13um CMOS process demonstrates the measured DNL and INL within 0.35LSB and 0.49LSB. The ADC with an active die area of $0.98mm^2$ shows a maximum SNDR and SFDR of 56.0dB and 69.6dB, respectively, and a power consumption of 19.2mW at a nominal condition of 0.8V and 60MS/s.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.30 no.5
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• pp.691-699
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• 1997

In order to find out the properties in flow resistance of trawlR=1.5R=1.5\;S\;v^{1.8}\;S\;v^{1.8} nets and the exact expression for the resistance R (kg) under the water flow of velocity v(m/sec), the experimental data on R obtained by other, investigators were pigeonholed into the form of $R=kSv^2$, where $k(kg{\cdot}sec^2/m^4)$ was the resistance coefficient and $S(m^2)$ the wall area of nets, and then k was analyzed by the resistance formular obtained in the previous paper. The analyzation produced the coefficient k expressed as $$k=4.5(\frac{S_n}{S_m})^{1.2}v^{-0.2}$$ in case of bottom trawl nets and as $$k=5.1\lambda^{-0.1}(\frac{S_n}{S_m})^{1.2}v^{-0.2}$$ in midwater trawl nets, where $S_m(m^2)$ was the cross-sectional area of net mouths, $S_n(m^2)$ the area of nets projected to the plane perpendicular to the water flow and $\lambda$ the representitive size of nettings given by ${\pi}d^2/2/sin2\varphi$ (d : twine diameter, 2l: mesh size, $2\varphi$ : angle between two adjacent bars). The value of $S_n/S_m$ could be calculated from the cone-shaped bag nets equal in S with the trawl nets. In the ordinary trawl nets generalized in the method of design, however, the flow resistance R (kg) could be expressed as $$R=1.5\;S\;v^{1.8}$$ in bottom trawl nets and $$R=0.7\;S\;v^{1.8}$$ in midwater trawl nets.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.9
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• pp.52-59
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• 2014

The aims of this paper are to characterize the transient overvoltages(TOVs) and to evaluate the risk occurring at 22.9kV consumer's substation. The measurements of lightning- and switching-caused TOVs were made during Mar. 2013 and Feb. 2014. As a consequence, 47 events of TOVs were recorded and 4 of them were higher than the input voltage envelope(IVE) of the information technology industry council(ITI) curve. The measured TOVs are characterized by longer front times and longer durations compared to the $1.2/50{\mu}s$ standard impulse voltage waveform, and some of them represent bipolar waves with lower oscillation frequencies. It suggests that the test of non-standard impulse voltage waveforms is needed for effective risk assessments of power apparatus. Lightning- and switching-caused TOVs exceeding IVE of ITI curve are induced at the secondary of 22.9kV potential transformer(PT). We may, therefore, conclude that the surge protection devices should be applied at the secondary of PT and the surge absorbers should be installed at the primary of VCB or PT. The results presented in this paper could be useful to design the reasonable insulation coordination for 22.9kV consumer's substation.

• Journal of Sensor Science and Technology
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• v.25 no.3
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• pp.218-222
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• 2016

Pure and V-doped NiO porous structures were prepared by the evaporation-induced surfactant assembly and subsequent pyrolysis of assembled structures, and their gas sensing characteristics were investigated. Pure NiO porous structures showed negligible gas responses (S=$R_g/R_a$, $R_g$: sensor resistance in analytic gas; $R_a$: sensor resistance in air) to 5 ppm trimethylamine (S=1.17) as well as other interfering gases such as ethanol, p-xylene, toluene, benzene and formaldehyde (S=1.02-1.13). In contrast, the V-doped NiO porous structures exhibited a high response and selectivity to 5 ppm trimethylamine (S=14.5) with low cross-responses to other interfering gases (S=4.0-8.7) at $350^{\circ}C$. The high gas response of V-doped NiO porous structures to trimethylamine was explained by electronic sensitization, that is, the increase in the chemoresistive variation due to the decrease in the hole concentration. The enhanced selectivity to trimethylamine was discussed in relation to the interaction between basic trimethylamine gas and acidic V catalysts.