• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.220-225
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• 2018

A class E power oscillator is demonstrated for 6.78-MHz wireless power transfer system. The oscillator is designed with a class E power amplifier to use an LC feedback network with a high-Q inductor between the input and the output. Multiple capacitors are used to minimize the variation of the oscillation frequency by capacitance tolerance. The gate and drain bias voltages with opposite characteristics to make the frequency shift of the oscillator are connected in a resistance distribution circuit located at the output of the low drop-out regulator and supplied bias voltages for class E operation. The measured output of the class E power oscillator, realized using the co-simulation, shows 9.2 W transmitted power, 6.98 MHz frequency and 86.5% transmission efficiency at the condition with 20 V $V_{DS}$ and 2.4 V $V_{GS}$.

• Journal of Sensor Science and Technology
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• v.32 no.4
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• pp.238-245
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• 2023

0.75(Bi_1/2Na_1/2)TiO₃-0.25SrTiO₃ (BNT-25ST) ceramics with high densities were successfully prepared at a sintering temperature of 1,000℃ by adding a mixture of 1 mol% CuO and 0.5 mol% Na₂CO₃ or 0.5 mol% CuO and 0.25 mol% Na₂CO₃. Double polarization-electric field (P-E) hysteresis curves and sprout-shaped bipolar strain-electric field (S-E) hysteresis curves with small negative strains were observed in the pristine and CuO-added BNT-25ST ceramics whereas the Na₂CO₃-added sample showed similar P-E and S-E curves to a typical ferroelectric. The pristine BNT-25ST ceramics showed an extremely large strain and a large-signal piezoelectric strain constant (d₃₃^*): 0.287 % at 80 kV/cm and 850 pm/V at 20 kV/cm. Similar values, 0.248 % at 80 kV/cm and 655 pm/V at 20 kV/cm, were obtained in the CuO-added sample. However, the pristine and CuO-added samples showed large hysteresis in unipolar S-E curves at an electric field of less than 20 kV/cm. The Na₂CO₃-added sample showed smaller values of the strain and d₃₃^* but displayed a linear change and small hysteresis in the unipolar S-E curve. The co-added sample with CuO and Na₂CO₃ displayed intermediate P-E and S-E hysteresis curves.

• Journal of the Korean Society of Radiology
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• v.14 no.5
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• pp.669-676
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• 2020

The purpose of this study was to analyze the changes in the values of Hounsfield Unit (HU) according to the changes in monoenergy (keV) and dilution ratio of the contrast agent, using the spectral CT. Spectral CT was used as the testing device, while 20 cc syringe phantom was used to set a total of six dilution ratios of the contrast agent: 8:2, 7:3, 6:4, 5:5, 4:6, and 3:7. Here, the non-ionic iodine solution (350 mg/ml) was used as a contrast agent. The syringe axial image was reconstructed by adjusting the obtained data on nine MonoE levels; 40 keV, 45 keV, 50 keV, 55 keV, 60 keV, 65 keV, 70 keV, 75 keV, and 80 keV. The HU values were measured at the three points of the reconstructed syringe axial image. The measurements were taken 1,620 times in total. In the analysis of the HU values according to the changes in keV and dilution ratio of the contrast agent, the highest and lowest HU values were obtained from dilution ratio 8:2 and dilution ratio 3:7, respectively, across every MonoE in the comparison of HU according to dilution ratio per MonoE (p<0.05), while the highest and lowest HU values were obtained from 40 keV and 80 keV, respectively, across all dilution ratios in the comparison of HU according to MonoE per dilution ratio (p<0.05). For the correlation per each parameter, a negative correlation of -15.014 ± 0.298 was found for HU per keV (R²=0.519) and a negative correlation of -61.372 ± 3.608 was found for HU per dilution ratio (R²=0.152) (p<0.05). To conclude, an increase in keV or dilution ratio of the contrast agent was shown to decrease the HU, and the findings in this study are anticipated to serve as the basic data in the research of HU-related parameters in Spectral CT.

• Proceedings of the CALSEC Conference
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• 2002.01a
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• pp.287-292
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• 2002

ebXML BizServer - ebXML MSH v1.0 - ebXML CPP/CPA Builder v1.0 ebXML RegRep - ebXML Registry v1.0 ebXML BP - ebXML BP Modeller v1.0(omitted)

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.431-435
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• 2002

The dark current and photocurrent(PC) spectrum of Mg-doped GaN thin film were investigated with various bias voltages and temperatures. At high temperature and small bias, the dark current is dominated by holes thermally activated from an acceptor level Al located at about 0.16 eV above the valence band maximum $(E_v)$, The PC peak originates from the electron transition from deep level A2 located at about 0.34 eV above the $E_v$ to the conduction band minimum $(E_ C)$. However, at a large bias voltage, holes thermally activated from A2 to Al experience the field-in-duces tunneling to form one-dimensional defect band at Al, which determines the dark current. The PC peak associated with the transition from Al to $E_ C$ is also observed at large bias voltages owing to the extended recombination lifetime of holes by the tunneling. In the near infrared region, a strong PC peak at 1.20 eV appears due to the hole transition from deep donor/acceptor level to the valence band.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.2
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• pp.83-86
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• 2013

The optical properties of ZnO thin film have been studied using photoluminescence(PL) spectroscopy with the change of sample temperatures from 10 K to 290 K. The spectrum at 10 K showed the characteristic emission lines of ZnO which were as follows: free exciton(FX) at 3.369 eV, neutral donor-bound exciton($D^0X$) at 3.360 eV, two electron satellite(TES) at 3.332 eV, $D^0X$-1LO at 3.289 eV, and donor-acceptor pair(DAP) transiton at 3.217 eV. From the spectral evolution with temperatures, two features could be identified as temperature went higher: (1) the bound excitons changed gradually into free excitons, (2) DAP turned into free electron-acceptor transition(e,$A^0$). The PL intensity of free exciton increased with the increase of temperatures, which was accompanied by the decrease of the intensity of bound excitions and bound excition-related transitons such as TES and $D^0X$-1LO. At 80 K DAP transition disappeared, while (e,$A^0$) transition started to appear at 30 K.

• Proceedings of the SAREK Conference
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• 2009.06a
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• pp.284-292
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• 2009

The stack-effect in high-rise buildings in winter causes many problems such as difficulties in opening or closing doors, infiltration, energy loss, noise and fire protection. Stack effect is influenced by temperature difference between the interior and exterior of building and the height of building. As an attenuation method for stack effect, the architectural methods are generally used. However, as though architectural methods were fully adopted, the problems are reported as ever in tall building. In this study, a new method to reduce stack effect will be suggested. As an active control method against the stack effect, E/V shaft natural cooling method is suggested. In this paper, the concept of E/V shaft natural cooling system and its reduction performance of stack effect by simulation and field measurement will be reported.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.3
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• pp.312-320
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• 2019

In this paper, we design a 512Kb eFlash IP using 110nm eFlash cells. We proposed eFlash core circuit such as row driver circuit (CG/SL driver circuit), write BL driver circuit (write BL switch circuit and PBL switch select circuit), read BL switch circuit, and read BL S/A circuit which satisfy eFlash cell program, erase and read operation. In addition, instead of using a cross-coupled NMOS transistor as a conventional unit charge pump circuit, we propose a circuit boosting the gate of the 12V NMOS precharging transistor whose body is GND, so that the precharging node of the VPP unit charge pump is normally precharged to the voltage of VIN and thus the pumping current is increased in the VPP (boosted voltage) voltage generator circuit supplying the VPP voltage of 9.5V in the program mode and that of 11.5V in the erase mode. A 12V native NMOS pumping capacitor with a bigger pumping current and a smaller layout area than a PMOS pumping capacitor was used as the pumping capacitor. On the other hand, the layout area of the 512Kb eFlash memory IP designed based on the 110nm eFlash process is $933.22{\mu}m{\times}925{\mu}m(=0.8632mm^2)$.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.1
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• pp.87-98
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• 1995

When the crack in orthotropic material is propagating under dynamic model I load, influences of anisotropic property ratio $E_{L}$/ $E_{T}$ on stress and displacement around propagating crack tip are studied in this paper. When M<0.55 and .alpha.=90.deg.(.alpha.; the angle of fiber direction with crack propagating direction, M; crack propagation velocity/shear stress wave velocity), the influence of $E_{L}$/ $E_{T}$ on stress .sigma.$_{x}$, .sigma.$_{y}$, .tau.$_{xy}$ and .sigma.$_{\theta}$ is the greast on .sigma.$_{y}$. Except M<0.55 and .alpha.=90.deg., it is the greast on .sigma.$_{x}$ in any situation. Increasing $E_{L}$/ $E_{T}$, stress components are increased or decreased. When maximum stress is based, the stress .sigma.$_{x}$(.alpha.=90.deg.), .sigma.$_{y}$(.alpha.=0.deg.) and .tau.$_{xy}$ (.alpha.=90.deg.) are decreased with increment of $E_{L}$/ $E_{T}$ in M=0. any stresses except .sigma.$_{*}$x/(.alpha.=0.deg.) are decreased with increment of $E_{L}$/ $E_{T}$ in M=0.9. When .alpha.=90.deg., the influence of $E_{L}$/ $E_{T}$ on displacement U and V is V>U in any velocities of crack propagation, when .alpha.=0.deg., it is VU in M>0.75 and when $E_{L}$/ $E_{T}$ is increased, U and V are decreased in any conditions.sed in any conditions.tions.tions.tions.