• Current Photovoltaic Research
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• v.4 no.3
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• pp.93-97
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• 2016

Light-emitting chromophores have been separated from silica spheres modified the surface with 3-(trimethoxysilyl)propylmethacrylate (TMSPM). The photoluminescence characteristics of the chromophores were investigated with various excitation wavelengths. The TMSPM was attached to the surface of silica spheres at $75^{\circ}C$. Large number of round shaped particles of the TMSPM was on the surface of silica spheres after 3 h reaction. The TMPSM was completely covered on the surface of the spheres after 6 h reaction. The surface modified silica spheres were soaked into acetone and stored for 20 days at ambient condition. The solution color slowly changed from light yellow to deep yellow with the increase of the storing time. The FTIR absorption peaks at 3348, 2869, 2927, 1715, 1453/1377, 1296, and $1120cm^{-1}$ represent C-OH, $R-CH_3$, $R_2-CH_2$, -C=O, C-H, C=C-H, and Si-O-Si absorption, respectively. The FTIR absorption peak at $1715cm^{-1}$ representing the ester -C=O stretching vibration for silica spheres stored for 20 days was increased compared with the spheres without aging. The UV-visible absorption peaks were at 4.51 eV (275 nm) and 3.91 eV (317 nm). There were two luminescence peaks at 2.51 eV (495 nm) and 2.25 eV (550 nm). The emission at 2.51 eV was dominant peak when the excitation energy was higher than 2.58 eV, and emission at 2.25 eV became dominant peak when the excitation energy was lower than 2.58 eV.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.3 no.2
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• pp.152-165
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• 1993

This study was performed at eleven small-sized plating factories located in Seoul, Incheon, Ansan, and Taejeon from July 21 to October 6, 1992. The major objectives of this study were to evaluate worker exposure to hexavalent chromium and local exhaust ventilation (L.E.V.) systems at the chromium plating operations. The most suitable L.E.V. systems for chromium plating tanks were designed as examples for recommendation to the industry. The results are summarized as follows. The range of chromium plating operations investigated included decorative, hard, and black chromium plating on several kinds of parts. Most of plating tanks were not equipped with proper control methods against emission of hexavalent chromium mists and workers were not wearing appropriate personal protectives. The ariborne hexavalent chromium concentrations showed an approximate lognormal distribution. The geometric means of both personal and area samples were within the Korean and ACGIH standards, $50{\mu}g/m^3$. However, in comparison with the NIOSH criterion, $1{\mu}g/m^3$, the geometric means of personal samples at two factories and the geometric means of area samples at two factories exceeded it. The geometric means of personal and area samples of high exposure groups (above the NIOSH criterion) were 7 and 27 times higher than those of low exposure groups (below the NIOSH criterion), respectively. The L.E.V. systems of high exposure groups were improperly designed, and the factory with the highest exposure level had no L.E.V. systems at all on chemical etching process. Whereas at factories of low exposure groups, mist control methods such as mist suppressants, tank cover, and/or auxillary L.E.V. systems were added to L.E.V systems. The evaluation of L.E.V. systems showed that there was no chromium plating operation satisfying the ACGIH criteria for capture velocity, slot velocity, and exhaust rate simultaneously. To increase performance of L.E.V. systems, it must be designed to minimize the impact of boundary layer separation. Push-pull ventilation hood and downward plenum ventilation hood were suggested for the Korean industry.

• Korean Chemical Engineering Research
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• v.58 no.2
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• pp.257-265
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• 2020

Densities (ρ) for binary mixtures of ethanol (1) + diisopropyl ether (DIPE) or cyclohexane or alkane (C₆-C₉) (2) were measured at 298.15 K, 308.15 K and 318.15 K. The excess molar volume (V^E_m) of binary mixtures was calculated using ρ data and correlated with Redlich-Kister polynomial equation. The V^E_m values for binary mixtures of ethanol (1) + cyclohexane or n-alkane (C₆-C₉) (2) were positive, whereas for ethanol (1) + DIPE (2) these were negative. The magnitude of V^E_m values follows the order: cyclohexane > n-nonane > n-octane > n-heptane > n-hexane > DIPE. The V^E_m values have been interpreted qualitatively and also quantitatively in terms of Flory-Treszczanowicz-Benson (FTB) model and Prigogine-Flory-Patterson (PFP) theory. The values V^E_m predicted using FTB model agree well with experimental V^E_m values at all mole fractions. But the PFP theory describes well V^E_m data in ethanol-rich region (x₁ > 0.5) for all binary mixtures and is able to predict the sign of V^E_m vs x₁ curve for ethanol-lean region (x₁ < 0.5) except for ethanol (1) + nonane (2) mixtures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.78-86
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• 1995

Abstract We have investigated the structure and the conductivity of the CdTe films evaporated on the glass substrates by Electron Beam Evaporator (EBE) technique. The structure is observed to be polycrystalline whose phase is mainly hexagonal phase with some cubic phase. Dark electric conductivity is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and slightly increased by annealing for an hour at $300^{\circ}C$. Activation energy calculated from the electrical conductivity which varies with increasing temperature is 1.446 eV in the case of room temperature substrates. The values of optical band gap are 1.52 eV in direct transition whereas 1.44 eV in indirect. The photoconductivity of the films is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and the peak energy is about 600 nm in the room temperature. The photoconductivity starts to increase at 850 nm, which is close to 1.446 eV, the activation energy of CdTe polycrystal films.

• Journal of IKEEE
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• v.27 no.4
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• pp.556-560
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• 2023

In this study, the impact of Nitrogen implantation process on deep-level defects and lifetime in 4H-SiC Epi surfaces was comparatively analyzed. Deep Level Transient Spectroscopy (DLTS) and Time Resolved Photoluminescence (TR-PL) were employed to measure deep-level defects and carrier lifetime. As-grown Schottky Barrier Diodes (SBDs) exhibited energy levels at 0.16 eV, 0.67 eV, and 1.54 eV, while for implantation SBD, defects at 0.15 eV were observed. This indicates a reduction in defects associated with energy levels Z_1/2 and EH_6/7, known as lifetime killers, as impurities from nitrogen implantation replace titanium and carbon vacancies.

• Journal of the Korean Applied Science and Technology
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• v.37 no.3
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• pp.516-525
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• 2020

The densities of aqueous solutions of the amphiphile 2-(2-hexyloxyethoxy)ethanol (C₆E₂) were measured at 279.15 K and 282.15 K by vibrating-tube densitometry. Then using the density data of the binary C₆E₂ (1)/water(2) system, the excess volumes and partial molar volumes were determined at various compositions. Excess volume V^E exhibits negative deviation for the whole region of composition, which implies relatively stronger attraction between molecules. At the C₆E₂ mole fraction of around 0.45, V^E was at its minimum. Partial molar volume ${\bar{V}}_1$ increases monotonously with the mole fraction x₁(=x) and ${\bar{V}}_2$ decreases with x. Any particular point in ${\bar{V}}_1$ and ${\bar{V}}_2$, which may point to molecular association, was unobserved.

• Journal of Adhesion and Interface
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• v.4 no.2
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• pp.30-36
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• 2003

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.235-238
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• 2006

Interface formation between $12CaO{\cdot}7Al_2O_3(C12A7:e^-)$ and Alq3 was investigated using in-situ ultra-violet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). The work function and vacuum level shift of $C12A7:e^-$ were change by different surface treatment from 2.6eV to 4.2eV. Also vacuum level shift $(\Delta)$ at the interface were from +0.3eV to -0.3eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.127.2-127.2
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• 2016

연구된 Si위의 흡착원자들의 확산 메커니즘들에 비해 Ge 표면에서의 확산 메커니즘은 잘 알려져 있지 않다. 최근 연구에 따르면, 수소가 덮인 Ge(110) 표면에서 그래핀 결정 핵생성은 비등방적이며, 낟알 둘레없이 웨이퍼 크기로 성장시킬 수 있음을 보였다. 본 연구에서는 VASP(Vienna Ab-initio Simulation Package)의 NEB(Nudged Elastic Band) 방법을 이용하여 수소가 덮인 Ge(110) 표면과 청결한 표면에서 탄소원자의 확산 과정과 확산에 따른 에너지 장벽을 계산 하였다. 계산 결과 수소가 덮인 표면에서의 탄소원자 확산은 체인 방향으로 각각 3.29 eV, 2.67 eV의 에너지 장벽을 가지고 청결한 표면에서는 탄소원자가 게르마늄 연결을 치환하며 확산한다. 이때 에너지 장벽은 0.82 eV이고 치환된 게르마늄이 확산할 때는 각각 0.64 eV, 0.59 eV의 에너지 장벽을 넘어야 한다. 결과적으로 수소가 덮인 표면에서보다 청결한 표면에서 탄소 확산 에너지 장벽이 낮으며, 청결한 표면에서는 탄소가 게르마늄을 치환하고 치환된 게르마늄이 확산할 확률이 높음을 알 수 있었다.

• Journal of the Korean Vacuum Society
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• v.2 no.3
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• pp.299-303
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• 1993

Erbium metal을 불순물로서 2mol% 첨가한 TlGaS2:Er3+ 단결정을 수평전기로에서 합성한 ingot를 사용하여 수직 Bridgman 방법으로 성장시켰다. 성장된 결정은 층상으로 이루어진 monoclinic 구조였으며, 10K에서 간접전이형 및 직접전이형 energy band gap은 각각 2.55eV, 2.57eV이었고, Er3+ 이온에 의한 두 개의 불순물 광흡수 peak가 524.9nm와 656.4nm에서 관측되었다. Themally stimulated current(TSC)를 측정하여 0.21eV와 0.38eV의 donor 준위와 0.71eV의 accptor 준위를 구하였다. 10K에서 측정된 photoluminescence(PL) spectrum에서는 632nm와 759nm에서 D-A pair에 의한 broad한 peak와 552, 559, 666, 813, 816, 827nm에서 Er3+ 이온에 의한 sharp한 peak들이 나타났다.