• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.19 no.6
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• pp.222-234
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• 2020

Autonomous vehicles are equipped with a wide rage of sensors such as GPS, RADAR, LIDAR, camera, IMU, etc. and are driven by recognizing and judging various transportation systems at intersections in the city. The accident ratio of the intersection of the autonomous vehicles is 88% of all accidents due to the limitation of prediction and judgment of an area outside the sensing distance. Not only research on non-signalized intersection collision avoidance strategies through V2V and V2I is underway, but also research on safe intersection driving in failure situations is underway, but verification and fragments through simple intersection scenarios Only typical V2V failures are presented. In this paper, we analyzed the architecture of the V2V module, analyzed the causal factors for each V2V module, and defined the failure mode. We presented intersection scenarios for various road conditions and traffic volumes. we used the ISO-26262 Part3 Process and performed HARA (Hazard Analysis and Risk Assessment) to analyze the risk of autonomous vehicle based on the simulation. We presented ASIL, which is the result of risk analysis, proposed a monitoring concept for each component of the V2V module, and presented monitoring coverage.

• The Korean Journal of Physiology and Pharmacology
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• v.1 no.6
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• pp.613-624
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• 1997

Dorsal root ganglion (DRG) is composed of neuronal cell bodies of primary afferents with diverse functions. Various types of ion channels present on DRG neurons may reflect those functions. In the present study, voltage-gated potassium currents in DRG neurons of neonatal rats were characterized by whole-cell voltage clamp method. Two types of delayed rectifier and three types of transient potassium currents were identified according to their electrophysiological properties. The delayed rectifier currents were named $I_{Ke}$ (early inactivating) and $I_{K1}$ (late inactivating). Steady state inactivation of $I_{Ke}$ began from -100 mV lasting until -20 mV. $I_{K1}$ could be distinguished from $I_{Ke}$ by its inactivation voltage range, from -70 mV to +10 mV. Three transient currents were named $I_{Af}$ (fast inactivation), $I_{Ai}$ (intermediate inactivation kinetics), and $I_{As}$ (slow inactivation). $I_{Af}$ showed fast inactivation with time constant of $10.6{\pm}2.0$ msec, $I_{Ai}$ of $36.9{\pm}13.9$ msec, and $I_{As}$ of $60.6{\pm}2.9$ msec at +30 mV, respectively. They also had distinct steady state inactivation range of each. Each cell expressed diverse combination of potassium currents. The cells most frequently observed were those which expressed both $I_{K1}$ and $I_{Af}$, and they had large diameters. The cells expressing $I_{Ke}$ and expressing $I_{Ke}$, $I_{Ai}$, and $I_{As}$ usually had small diameters. Judging from cell diameter, capsaicin sensitivity or action potential duration, candidates for nociceptor were the cells expressing $I_{Ke}$, expressing $I_{Ke}$ and $I_{Ai}$, and expressing $I_{Ke}$ and $I_{As}$. The types and distribution of potassium currents in neonatal rat DRG were similar to those of adult rat DRG (Gold et al, 1996b).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.687-690
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• 2004

Fabrication and characterization of dye-sensitized TiO2 solar cells(DSSC) consisting of spray-coated TiO2 electrode, an electrolyte containing I-/I3- redox couple, and a Pt-coated counter electrode carried out, using mainly FE-SEM and solar simulator. Also, effect of rapid thermal annealing(RTA) temperatue on I-V curves of DSSCS consisting of approximately 10m thickness and $5{\times}5mm2$ active area. No significant difference in the apparent size of TiO2 clusters was observed with increasing RTA temperature. Also, an open circuit voltage(Voc) of approximately 0.70V and a short-circuit photocurrent(Jsc) of 8 to 12mA/cm2 were observed in the TiO2 solar cell. With increasing RTA temperature upto 550oC, photocurrent density of dye-sensitized solar cells was enhanced, leading to enhancing the efficiency of dye-sensitized solar cells having Pt-electroplated counter electrode.

• Journal of Korea Society of Digital Industry and Information Management
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• v.18 no.2
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• pp.9-16
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• 2022

The nodes constituting the vehicle ad hoc network (VANET) are vehicles moving along the road and road side units (RSUs) installed around the road. The vehicle ad hoc network is used to collect the status, speed, and location information of vehicles driving on the road, and to communicate with vehicles, vehicles, and RSUs. Today, as the number of vehicles continues to increase, urban roads are suffering from traffic jams, which cause various problems such as time, fuel, and the environment. In this paper, we propose a method to solve traffic congestion problems on urban roads and demonstrate that the method can be applied to solve traffic congestion problems through performance evaluation using two typical protocols of vehicle ad hoc networks, AODV and GPSR. The performance evaluation used ns-2 simulator, and the average number of traffic jams and the waiting time due to the average traffic congestion were measured. Through this, we demonstrate that the vehicle ad hoc-based traffic congestion management technique proposed in this paper can be applied to urban roads in smart cities.

• Natural Product Sciences
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• v.5 no.2
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• pp.104-106
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• 1999

The chloroform fraction of the aqueous extract of the fresh leaves of Vitex negundo by bioactivity guided isolation yielded a pure compound, rotundial (1) which has shown potent mosquito repellent activity. Using spectral data (UV, IR, $^1H\;&\;^{13}C$ NMR and MS) its structure has been elucidated.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.7 no.8
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• pp.1933-1954
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• 2013

Multiple wireless devices are being widely deployed in Intelligent Transportation System (ITS) services on the road to establish end-to-end connection between vehicle-to-vehicle (V2V) and vehicle-to-infrastructure (V2I) networks. Vehicular ad hoc networks (VANETs) play an important role in supporting V2V and V2I communications (also called V2X communications) in a variety of urban environments with distinct topological characteristics. In fact, obstacles such as big buildings, moving vehicles, trees, advertisement boards, traffic lights, etc. may block the radio signals in V2X communications. Their impact has been neglected in VANET research. In this paper, we present a realistic and efficient radio propagation model to handle different sizes of static and moving obstacles for V2X communications. In the proposed model, buildings and large moving vehicles are modeled as static and moving obstacles, and taken into account their impact on the packet reception rate, Line-of-sight (LOS) obstruction, and received signal power. We use unsymmetrical city map which has many dead-end roads and open faces. Each dead-end road and open faces are joined to the nearest edge making a polygon to model realistic obstacles. The simulation results of proposed model demonstrates better performance compared to some existing models, that shows proposed model can reflect more realistic simulation environments.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.69-76
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• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• Journal of applied mathematics & informatics
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• v.38 no.1_2
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• pp.189-200
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• 2020

Let G be a simple connected graph with n vertices and m edges. Denote by d₁ ≥ d₂ ≥ ⋯ ≥ d_n > 0 and d(e₁) ≥ d(e₂) ≥ ⋯ ≥ d(e_m) sequences of vertex and edge degrees, respectively. If vertices v_i and v_j are adjacent, we write i ~ j. The general sum-connectivity index is defined as 𝒳_α(G) = ∑_i~j(d_i + d_j)^α, where α is an arbitrary real number. Firstly, we determine a relation between 𝒳_α(G) and 𝒳_α-1(G). Then we use it to obtain some new bounds for 𝒳_α(G).

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.84-84
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• 2003

The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low-temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton, I$_2$ (D$^{\circ}$, X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3meV The exciton peak, lid, at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. The I$_1$$\^$d/ peak was dominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The SA peak was found to be related to a complex donor like a (V$\sub$se/ - V$\sub$zn/) - V$\sub$zn-/

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.