• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.4 no.4
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• pp.43-51
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• 1990

레이저 비임이 대기중을 전파할 때 고류(turbulence)의 영향을 고려해야 한다. 고류의 영향에 의한 프린지 시도는 extended Huygens-Fresnel principle을 도입하여 타원체로 간주할 수 있는 프린지 체적에서 장의 전 분포를 시하고 이 전 분포로부터 평균 강도분포를 얻었으며, 평균 강도분포를 구하기 위해 Fourier-Bessel적분을 행하였다. 평균 강도분포에서 최대 평균 강도분포max 및 최소 평균 강도분포 min을 얻었으며, 이 식들을 프린지 시도의 정의 식 V=(Imax-Imax)/(Imax+Imin)에 적용하였다. 본 논문에서는 광원으로 파장 =4880[]인 아르곤 레이저를 사용하였고 광원의 모우드는 TEM..모우드로 하였다. 또한 비임의 교각 =5˚, 광원으로부터 프린지 체적 까지의 거리 L=10[m], en 광원간의 거리 B=(2tan /2)L, 특성 비임 반경 =2 /[ ( /2)]을 이용하여 프린지 시도에 관한 결과를 얻었으며, 이 결과에 의하면 L'( / ·L)에 대한 변수 r의 비 r/L'= 에서 V=1이고, r/L=0.1에서 프린지 시도가 감소한다. 또 강 고 류인 경우와 약 고 류인 경우에 대해 프린지 시도를 비교하였을 때 강 고류에서 감소폭이 크다는 사실을 알 수 있었다.

• Proceedings of the Korean Geotechical Society Conference
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• 2008.10a
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• pp.1157-1166
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• 2008

Critical surcharge value of silt ground polluted with garbage leachate to the dyes $q_{cr}=3.73c_u$ and ultimate bearing capacity value $q_{ult}=8.60c_u$. Lateral flow pressure at polluted silt ground was about $P_{max}$/3 and depth of maximum lateral flow pressure was found at that of H/3 of soft layer thickness(H). Expression of polluted silt ground of fracture baseline at stability control charge by Matsuo Kawamura is $S_v=3.56\exp\{0.51(Y_m/S_v)\}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.787-790
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• 2009

High contrast red, green and blue organic light-emitting diodes were fabricated using inorganic metal multi layer composed of thin Al, KCl and thick Al and then were compared to optical and electrical characteristics with the attached polarizer and conventional OLEDs. Ambient light reflection of OLED using inorganic metal layer, polarizer and conventional metal layer were 29.2, 31.1 and 82.5% respectively. Optical characteristics of OLEDs using inorganic metal layer were max luminescence of 13040 cd/m2 and luminous efficiency of 2.12 cd/A at 8V whereas OLEDs using polarizer has 8456 cd/m2 and 1.43 cd/A at 8V each. OLEDs including inorganic metal multi layers show significant technical advantages in achieving high performance of OLED display with improved contrast ratio of 251:1, specifically in Red OLED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.153-154
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• 2007

결정질 실리콘 웨이퍼의 두께와 비저항은 태양전지의 효율을 결정하는 매우 중요한 요인이다. 높은 효율을 갖는 태양전지 설계를 위해 태양전지 시뮬레이터인 PC1D 프로그램을 이용하여 태양전지 웨이퍼 두께, 웨이퍼 비저항, 에미터 도핑 농도를 조절하였다. 최적화 결과, 베이스층 두께 $100{\mu}m$, 비저항 $0.1{\Omega}{\cdot}cm$, 에미터층 도핑 농도 $3{\cdot}10^{18}cm^{-3}$에서 $J_{sc}=39(mA/cm^2),\;V_{oc}=734(mV),\;P_{max}=3.17(W)$, FF=74, Efficiency=21.3%의 고효율을 얻을 수 있다. 본 연구를 통하여 태양전지 설계나 제조 시에 연구비를 절감할 수 있고 높은 효율의 태양전지로 접근할 수 있다.

• Proceedings of the Korea Information Processing Society Conference
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• 2020.11a
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• pp.796-799
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• 2020

신경망은 주로 전체 데이터를 중앙에서 학습시키거나 상황에 따라 데이터나 모델을 나누어 분산학습 방법으로 처리해 왔다. 그러나 데이터의 양의 증가와 보안적 이유로 인해 모든 환경에서 기존의 방법을 쓰기에 어려움이 있다. 본 연구에서는 제한된 데이터만으로 모든 데이터로 학습한 것과 같은 학습 효과를 내기 위한 방법을 제안한다. 데이터의 구성이 다른 두 가지 환경인 V-환경과 H-환경에서 학습한 모델을 어떤 방법으로 통합해야 기존의 성능과 비슷한 성능을 낼 수 있는지 연구한다. 우리는 가중치를 합치는 방법을 avg, max, absmas 3가지 방법으로 실험하였으며, 실험 결과로 V-환경에서는 기존의 성능과 비슷한 성능을 보였으며, H-환경에서는 기존의 성능에는 부족하지만, 의미 있는 성능을 보였다.

• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.2070-2078
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• 2014

In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at $V_{DS}=1V$, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain ($A_v$), unit-gain frequency ($f_{unity}$), and cut-off frequency ($f_T$). The Ge/GaAs HGD pnpn TFET demonstrated $A_v=19.4dB$, $f_{unity}=10THz$, $f_T=0.487$ THz and $f_{max}=18THz$.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.623-624
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• 2006

In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

• Archives of Pharmacal Research
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• v.25 no.6
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• pp.984-988
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• 2002

The issue of whether or not the presence NOx (NO and oxidized metabolites) in the hepatocytes at pathological levels affects the functional activity of transport systems within the sinusoidal membrane was investigated. For this purpose, the effect of the pretreatment of isolated hepatocytes with sodium nitroprusside (SNP), a spontaneous NO donor, on the sinusoidal uptake of tributylmethylammonium (TBuMA) and triethylmethyl ammonium (TEMA), representative substrates of the organic cation transporter (OCT), and taurocholate, a representative substrate of the $Na^+$/taurocholate cotransporting polypeptide (NTCP), was measured. The uptake of TBuMA and TEMA was not affected by the pretreatment, as demonstrated by the nearly identical kinetic parameters for the uptake ($i.e., V_{max}, K_{m} and CL_{linear}$). The uptake of mannitol into hepatocytes was not affected, demonstrating that the membrane integrity remained constant, irregardless of the SNP prutreatment. On the contrary, the uptake of taurocholate was significantly inhibited by the pretreatment, resulting in a significant decrease in V_{max}$, thus providing a clear demonstration that NOx preferentially affects the function of NTCP rather than OCT on the sinusoidal membrane. A direct interaction between NOx and NTCP or a decrease in $Na^+/K^+$ ATPase activity as the result of SNP pretreatment might be responsible for this selective effect of NOx.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.8C
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• pp.1210-1217
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• 2004

LILI-II stream cipher is an upgraded version of the LILI-128, one of candidates in NESSIE. Since the algorithm is a clock-controlled, the speed of the keystream data is degraded structurally in a clock-synchronized hardware logic design. Accordingly, this paper proposes a 4-bit parallel LFSR, where each register bit includes four variable data routines for feedback or shifting within the LFSR. furthermore, the timing of the proposed design is simulated using a Max+plus II from the ALTERA Co., the logic circuit is implemented for an FPGA device (EPF10K20RC240-3), and apply to the Lucent ASIC device (LV160C, 0.13${\mu}{\textrm}{m}$ CMOS ＆ 1.5v technology), and it could achieve a throughput of about 500 Mbps with a 0.13${\mu}{\textrm}{m}$ semiconductor for the maximum path delay below 1.8㎱. Finally, we propose the m-parallel implementation of LILI-II, throughput with 4, 8 or 16 Gbps (m=8, 16 or 32).

• Journal of the Korean Ceramic Society
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• v.49 no.3
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• pp.266-271
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• 2012

The effect of $Bi(Mg_{1/2}Sn_{1/2})O_3$ (BMS) modification on the crystal structure, ferroelectric and piezoelectric properties of $Bi_{1/2}(Na_{0.8}K_{0.2})_{1/2}TiO_3$ (BNKT) ceramics has been investigated. The BMS-substitution induced a transition from a ferroelectric (FE) tetragonal to a nonpolar pseudocubic phase, leading to degradations in the remnant polarization, coercive field, and piezoelectric coefficient $d_{33}$. However, the electric-field-induced strain was significantly enhanced by the BMS substitution-induced phase transition and reached a highest value of $S_{max}/E_{max}$ = 633 pm/V under an applied electric field of 6 kV/mm when the BMS content reached 6 mol%. The abnormal enhancement in strain was attributed to the field-induced transition of the pseudocubic symmetry to other asymmetrical structure, which was not clarified in this work.