• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.3
• /
• pp.111-118
• /
• 2023

MXene, a two-dimensional transition metal carbide or nitride, has recently attracted much attention as a lightweight and flexible electromagnetic shielding material due to its high electrical conductivity, good mechanical strength and thermal stability. In particular, the Ti-based MXene, Ti₃C₂T_x and Ti₂CT_x are reported to have the best electrical conductivity and electromagnetic shielding properties in the vast MXene family. Therefore, in this study, Ti₃C₂T_x and Ti₂CT_x films were prepared by vacuum filtration using Ti₃C₂T_x and Ti₂CT_x dispersions synthesized by interlayer metal etching and centrifugation of Ti₃AlC₂ and Ti₂AlC. The electrical conductivity and electromagnetic shielding efficiency of the films were measured after heat treatment at high temperature. Then, X-ray diffraction and photoelectron spectroscopy were performed to analyze the structural changes of Ti₃C₂T_x and Ti₂CT_x films after heat treatment and their effects on electromagnetic shielding. Based on the results of this study, we propose an optimal structure for an ultra-thin, lightweight, and high performance MXene-based electromagnetic shielding film for future applications in small and wearable electronics.

• Korean Journal of Materials Research
• /
• v.32 no.5
• /
• pp.264-269
• /
• 2022

Ti₃C₂T_x MXene, which is a representative of the two-dimensional MXene family, is attracting considerable attention due to its remarkable physicochemical and mechanical properties. Despite its strengths, however, it is known to be vulnerable to oxidation. Many researchers have investigated the oxidation behaviors of the material, but most researches were conducted at high temperatures above 500 ℃ in an oxidation-retarding environment. In this research, we studied changes in the structural and electrical properties of Ti₃C₂T_x MXene induced by low-temperature heat treatments in ambient conditions. It was found that a number of TiO₂ particles were formed on the MXene surface when it was mildly heated to 200 ℃. Heating the material to higher temperatures, up to 400 ℃, the phase transformation of Ti₃C₂T_x MXene to TiO₂ was accelerated, resulting in a TiO₂/Ti₃C₂T_x hybrid. Consequently, the metallic nature of pure Ti₃C₂T_x MXene was transformed to semiconductive behavior upon heat-treating at ≥ 200 ℃. The results of this research clearly demonstrate that Ti₃C₂T_x MXene may be easily oxidized even at low temperatures once it is exposed to air.

• Journal of the Microelectronics and Packaging Society
• /
• v.29 no.1
• /
• pp.17-33
• /
• 2022

Ti₃C₂T_X MXene, first reported by Naguib et al. in 2011, has attracted tremendous attention due to its excellent hydrophilicity, electrical conductivity, and mechanical/chemical stability. Since MXene is a two-dimensional material with a thickness of few nanometers, which ensure its flexibility. In last few years, due to these properties many researchers used Ti₃C₂T_X MXene into various fields such as flexible smart sensors, energy harvesting/storage devices, supercapacitors and electromagnetic interference shielding systems. In this review article, we have briefly discussed the various synthesis processes and characteristics of Ti₃C₂T_X MXene. Moreover, we reviewed the latest development of Ti₃C₂T_X MXene as flexible electrode material to be used into different applications.

• Journal of Electrochemical Science and Technology
• /
• v.13 no.4
• /
• pp.431-437
• /
• 2022

As one of the most hazardous and deadliest pathogens, Listeria monocytogenes (LM) posed various serious diseases to the human being, thus designing effective strategy for its detection is of great significance. In this work, by preparing Ti₃C₂T_x MXenes nanoribbon (Ti₃C₂T_xR) as carrier and selecting thionine (Th) acted simultaneously as signal probe and functional monomer, a LM pathogen-imprinted polymers (PIP) integrated probe electrochemical sensor was design to monitor LM for the first time, that was carried out through the electropolymerization of Th on the Ti₃C₂T_xR/GCE surface in the existence of LM. Upon eluting the templates from the LM imprinted cavities, the fabricated PIP/Ti₃C₂T_xR/GCE sensor can rebound LM cells effectively. By recording the peak current of Th as the response signal, it can be weakened when LM cell was re-bound to the LM imprinted cavity on PIP/Ti₃C₂T_xR/GCE, and the absolute values of peak current change increase with the increasement of LM concentrations. After optimizing three key parameters, a considerable low analytical limit (2 CFU mL^-1) and wide linearity (10-10⁸ CFU mL^-1) for LM were achieved. In addition, the experiments demonstrated that the PIP/Ti₃C₂T_xR sensor offers satisfactory selectivity, reproducibility and stability.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.41 no.8
• /
• pp.869-874
• /
• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.861-864
• /
• 2002

Ferroelectric $Bi_{4-x}Nd_xTi_3O_{12}$(BNdT) thin films with the composition(x=0.75) were prepared on pt/Ti/$SiO_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BNdT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atmosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}Nd_xTi_3O_{12}$(X=0.75) thin film capacitors with a Pt top electrode showed better ferroelectric properties. At the applied voltage of 5V, the dielectric constant$(\varepsilon_r)$, dissipation factor$(tan{\delta})$, remanent polarization(2Pr) and nonvolatile swiching charge of the $Bi_{4-x}Nd_xTi_3O_{12}$(x=0.75)thin films were about 346.7, 0.095, $56{\mu}C/cm^2$ and $38{\mu}C/cm^2$ respectively. Also the capacitor did not show any significant fatigue up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1MHz.

• Applied Microscopy
• /
• v.34 no.1
• /
• pp.61-69
• /
• 2004

The microwave dielectric properties and microstructures of the Complex Perovskite (1-x)$(Li_{1/2}Sm_{1/2})TiO_3-x (Na_{1/2}Sm_{1/2})TiO_3$(LNST) system were investigated using the X-ray diffraction (XRD) and scanning electron microscopy (SEM). LNST had not only the antiphase tilting of oxygen octahedron but also the inphase tilting of oxygen octahedron and the antiparallel shift of cations. Also, when $0.0{\leq}x{\leq}0.4$, LNST had the vacancy ordering of A-sites because of the evaporation of Li ions. From the observation of the microstructure, abnormal grain growth phenomena were observed over the whole range of x. The temperature coefficient of resonant frequency ($T_{cf}$) of the $({Li_{1/2}}^{+1}{Sm_{1/2}}^{+3})TiO_3$(LST) system has a large negative value ($-220ppm/^{\circ}C$) but the $({Na_{1/2}}^{+1}{Sm_{1/2}}^{+3})TiO_3$(NST) system which substituted $Na^{+1}$ has a large positive value ($+173ppm/^{\circ}C$). The dielectric properties of ${\varepsilon}_r=103,\;Q*f_{0}=3,700GHz$ and $T_{cf}=+50ppm/^{\circ}C$ at 4GHz were obtained when x =0.4.

• Journal of the Korean Ceramic Society
• /
• v.34 no.8
• /
• pp.908-913
• /
• 1997

Multilayer NbCxC1-x/Y2O3/Ti were sputter-coated on the alumina substrate, starting with a 0.7 ㎛ thick NbCxC1-x layer grown on substrate, followed by 0.7 ㎛ thick Y2O3 layer and 1 ㎛ thick Ti layer. To find out the optimum conditions for thickness uniformity and adhesion, sputtering works have been done with the variation of sputtering power and Ar pressure. After vacuum annealing at 950℃ and 1000℃, the thermal stability of the NbCxC1-x/Y2O3/Ti coated alumina substrates has been investigated by peel off test. The coating scheme didn't cause any debonded layer after an annealing at 950℃ for 3hrs. However, it was peeled off after annealing at 1000℃ for 3hr. It was found that the thermal stability of Al2O3/NbCxC1-x/Y2O3/Ti coating scheme changed with the NbCxC1-x composition.

• Proceedings of the Korean Radioactive Waste Society Conference
• /
• 2018.11a
• /
• pp.379-379
• /
• 2018

MXenes are a new family of 2D transition metal carbide nanosheets analogous to graphene (Lv et al., 2017; Sun et al., 2018). Due to the easy availability, hydrophilic behavior, and tunable chemistry of MXenes, their use in applications for environmental pollution remediation such as heavy metal adsorption has recently been explored (Li et al., 2017). In this study, three-dimensional (3D) MXene ($Ti_3C_2T_x$) films with high adsorption capacity, good mechanical strength, and high selectivity for specific radionuclide from aquose solution were successfully fabricated by a polymeric precursor method using vacuum-assisted filtration. The highest removal efficiency on the films was 99.54%, 95.61%, and 82.79% for $Sr^{2+}$, $Co^{2+}$, and $Cs^+$, respectively, using a film dosage of 0.06 g/ L in the initial radionuclide solution (each radionuclide concentration = 1 mg/L and pH = 7.0). Especially, the adsorption process reached an equilibrium within 30 min. The expanded interlayer spacing of $Ti_3C_2T_x$ sheets in MXene films showed excellent radionuclide selectivity ($Cs^+$ and/or $Sr^{2+}/Co^{2+}$) (Simon, 2017). Besides, the MXene films was not only able to be easily retrieved from an aqueous solution by filtration after decontamination processes, but also to selectively separate desired target radionuclides in the solutions. Therefore, the newly developed MXene ($Ti_3C_2T_x$) films has a great potential for radionuclide removal from aqueous solution.

• Advances in nano research
• /
• v.13 no.3
• /
• pp.259-267
• /
• 2022

Two-dimensional (2D) transition metal carbides/nitrides or "MXenes" belong to a diverse-class of layered compounds, which offer composition- and electric-field-tunable electrical and physical properties. Although the majority of the MXenes, including Ti₃C₂T_x, are metallic, they typically show semiconductor-like behaviour in their percolated thin-film structure; this is also the most common structure used for fundamental studies and prototype device development of MXene. Magnetoconductance studies of thin-film MXenes are central to understanding their electronic transport properties and charge carrier dynamics, and also to evaluate their potential for spin-tronics and magnetoelectronics. Since MXenes are produced through solution processing, it is desirable to develop deposition strategies such as inkjet-printing to enable scale-up production with intricate structures/networks. Here, we systematically investigate the extrinsic negative magnetoconductance of inkjetprinted Ti₃C₂T_x MXene thin-films and report a crossover from weak anti-localization (WAL) to weak localization (WL) near 2.5K. The crossover from WAL to WL is consistent with strong, extrinsic, spin-orbit coupling, a key property for active control of spin currents in spin-orbitronic devices. From WAL/WL magnetoconductance analysis, we estimate that the printed MXene thin-film has a spin orbit coupling field of up to 0.84 T at 1.9 K. Our results and analyses offer a deeper understanding into microscopic charge carrier transport in Ti₃C₂T_x, revealing promising properties for printed, flexible, electronic and spinorbitronic device applications.