• 제목/요약/키워드: $TiO_x$

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LTCC응용을 위한 Ti-Te계 세라믹스의 저온소결 특성 (Low Temperature Sintering Properties of Ti-Te System Ceramics for LTCC Application)

  • 김재식;류기원;배선기;이영희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 제38회 하계학술대회
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    • pp.1299-1300
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    • 2007
  • In this study, low temperature sintering property of (1-x)$TiTe_{3}O_{8}-xMgTiO_{3}$ ceramics were investigated for LTCC application which enable to cofiring with Ag electrode. $TiTe_{3}O_{8}$ mixed with $MgTiO_3$ to improve the temperature property. In the X-ray diffraction patterns, the columbite structure of $TiTe_{3}O_{8}$ phase and ilmenite structure of $MgTiO_3$ phase were coexisted in all specimens. The bulk densities and dielectric constants were decreased with increasing of $MgTiO_3$. However, the quality factors were increased with $MgTiO_3$ addition. Also, TCRF was shifted to negative(-) direction. Microwave dielectric properties of (1-x)$TiTe_{3}O_{8}-xMgTiO_{3}$ ceramics had similar tendency with calculated value by the mixing rule. The dielectric constant, quality factor and TCRF of $05TiTe_{3}O_{8}-0.5MgTiO_{3}$ ceramics sintered at $830^{\circ}C$ for 3h. were 26.19, 43,290GHz and $-3.9ppm/^{\circ}C$, respectively.

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$Pb_{x}Ti_{1-x}$$O_2$(x = 0.1) 박막의 제조 및 특성 (Preparation and characteristics of $Pb_{x}Ti_{1-x}$$O_2$(x = 0.1) Thin Film)

  • 김상수;권식철
    • 한국결정성장학회지
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    • 제10권6호
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    • pp.418-424
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    • 2000
  • sol-gel 방법으로 순수한 $TiO_2$와 Pb가 10 mol % 첨가된 $TiO_2(Pb_xTi_{1-x}O_2$(x = 0.1)) 분말과 박막을 제조하였다. $TiO_2$제조에는 titanium isopropoxide와 ethanol이 $Pb_xT_{1-x}O_2$(x = 0.1) 제조에는 lead acetate trihydrate와 titanium triisopropoxide monoacethylacetonate이 사용되었다. P-type Si(100) wafer, ITO glass 기판 위에 sol-gel spin-coating방법으로 박막을 형성시켰으며 상(phase)의 형성과 결정화를 위해서 400~$800^{\circ}C$에서 열처리하였다 준비된 분말 및 박막의 특성은 TGA/DTA, XRD, SEM, UV-visible spectrometer를 이용하여 검토하였다. XBD 측정 결과 A(101)면으로 우선 배향된 다결정성 anatase 형의 분말 및 박막을 얻을 수 있었고 Pb가 첨가된 박막에 대한 d-값의 작은 변화가 관측되었는데 이는 Pb가 $TiO_2$살창으로 들어왔음을 의미한다. UV-visible투과 스펙트럼측정 결과에 의하면 Pb가 첨가된 박막에서 투과 스펙트럼의 흡수파장이 장파장쪽으로 이동하는데 이는 Pb가 첨가되면 밴드 갭의 축소가 일어남을 의미한다.

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$(Na_{1/2}Bi_{1/2})TiO_3-PbTiO_3$ 고용체의 강유전 상전이 거동 (Ferroelectric Phase Transition Behavior in $(Na_{1/2}Bi_{1/2})TiO_3-PbTiO_3$ System)

  • 홍국선;조서용;박승익
    • 한국세라믹학회지
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    • 제32권8호
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    • pp.915-921
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    • 1995
  • The morphotropic phase boundary and phase transitions of the solid solutiion system, (1-x)(Na1/2Bi1/2)TiO3-PbTiO3+xPbTiO3 were studied by investigating changes in crystal structure, variations in permittivity with temperature, and calorimetric behavior. It was observed that the morphotropic phase boundary (MPB) of this solid solutiion system was at near 14 mol% of PbTiO3. Compositions containing less than 10mol% PbTiO3 (x<0.1) exhibited a phase transition, i.e. ferroelectric rhombohedrallongrightarrowparaelectric paraelectric cubic, with increasing temperature. Composition containing more than 14 mol% PbTiO3 (x 0.14) showed a phase transition from ferroelectric tetragonal to paraelectric cubic. In the composition range of 0.1$\varepsilon$ (T) curve, which coincided with a phase transition from ferroelectric rhombohedral to an intermediate phase, was also found.

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소결온도와 Sr몰비에 따른 Mg$_{1-x}Sr_xTiO-3$ 세라믹스의 구조 및 마이크로파 유전특성 (Structural and Microwave Dielectric Properties of the Mg$_{1-x}Sr_xTiO-3$ Ceramics with Sintering Temperature and Sr Mole Ratio)

  • 최의선;정장호;유기원;이영희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권5호
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    • pp.226-231
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    • 2001
  • The $Mg_{1-x}Sr_xTiO_3\;(x=0.02{\sim}0.08)$ ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1250^{\circ}C{\sim}1350^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite $SrTiO_3$ and ilmenite $MgTiO_3$ structures were coexisted in the $Mg_{1-x}Sr_xTiO_3\;(x=0.02{\sim}0.08)$ ceramics. The dielectric constant( ${\epsilon}_r$) was increased with addition of $SrTiO_3$. The temperature coefficient of resonant frequency( ${\tau}_f$) was gradually varied from negative value to the positive value with increasing the $SrTiO_3$. The temperature coefficient of resonant frequency of the $Mg_{1-x}Sr_xTiO_3(x=0.036)$ ceramics was near zero, where the dielectric constant, quality factor, and ${\tau}_f$ were 20.65, 95120 and +1.3ppm/$^{\circ}C$, respectively.

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(1-x)Mg4Ta2O9-xTiO2(x=0\sim0.9)세라믹스의 미세구조와 마이크로파 유전 특성 (Microstructure and Microwave Dielectric Properties of (1-x)Mg4Ta2O9-xTiO2(x=0\sim0.9) Ceramics)

  • 김재식;최의선;이문기;류기원;이영희
    • 한국전기전자재료학회논문지
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    • 제17권8호
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    • pp.840-845
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    • 2004
  • The microstructure and microwave dielectric properties of $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics were investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of 140$0^{\circ}C$∼150$0^{\circ}C$. To improve the quality factor and the temperature coefficient of resonant frequency,$ Ti{O}_2(\varepsilon\Gamma=100, Q\times f_\Gamma=40,000 GHz,\ta_f= +450 ppm\diagup^{\circ}C $ was added in ${Mg}_4{Ta}_2{O}_9$ceramics. The dielectric and structural properties were investigated. According to the XRD patterns, $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics had the ${Mg}_4{Ta}_2{O}_9$ phase(hexagonal) and ${MgTi}_2{O}_5$phase(orthorhombic). The dielectric constant($\varepsilon_r$). quality($Qtimes{f}_r$${\tau}_f$) of the $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics were 8.12∼18.59, 18,750∼186,410 GHz and -36.02∼+3.46 ppm/$^{\circ}C$, respectively.

Preparation and Characterization of $Ag/TiO_{2-x}N_x$ Nanoparticles

  • Liu, Z.Q.;Li, Z.H.;Zhou, Y.P.;Ge, C.C.
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.436-437
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    • 2006
  • The $Ag/TiO_{2-x}N_x$ nanoparticles were synthesized by photochemical deposition in a $TiO_{2-X}N_X$ suspension system. The prepared products were characterized by means of XRD, Uv-vis and photoluminescence spectra (PL). Its photocatalytic activity was investigated by the decomposition of methylene blue (MB) solution under illumination of visible and ultraviolet light, respectively. Compared to $TiO_{2-x}N_x$, the photocatalytic activity of the as-prepared $Ag/TiO_{2-x}N_x$ is obviously enhanced due to the decreasing recombination of a photoexcitated electron-hole pairs. The Mechanism in which photocatalytic activity is enhanced has been discussed in detail.

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소결 분위기가 $(1-x)CaTiO_3-xLaAlO_3$계의 마이크로파 유전특성에 미치는 영향 (The Effect of Sintering Atmosphere on the Microwave Dielectric Properties of $(1-x)CaTiO_3-xLaAlO_3$ System)

  • 여동훈;김현재;문종하
    • 한국세라믹학회지
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    • 제34권5호
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    • pp.505-511
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    • 1997
  • The effects of sintering atmospheres(air, O2, N2) on the sintering and microwave dielectric properties of (1-x)CaTiO3-xLaAlO3 system was investigated. The sintered density of (1-x)CaTiO3-xLaAlO3 under air atmosphere increased linearly with increasing x, but it decreased in the range of x>0.5 under O2 atmosphere and x>0.6 under N2 atmosphere in spite of the increament of the smaller La(1.06$\AA$) and Al(0.5 $\AA$) ion than Ca(0.99$\AA$) and Ti(0.6$\AA$). In case of the air sintering atmosphere of (1-x)CaTiO3-xLaAlO3 the two phases of orthorhombic and rhombohedral crystal system were coexisting, and the XRD peak of rhombohedral crystalsystem was to be higher with increasing x. However, the sintering atmosphere of O2 and N2 made the monophasic crystal system of orthorhombic keep up by x=0.5 and x=0.6, respectively, and it transformed to pseudo-cubic crystal system in x>0.5 and x>0.6. The XRD peak intensity of (1-x)CaTiO3-xLaAlO3 was to be gradually higher with increasing x under the air atmosphere of sintering. Whereas, its XRD peak intensity increased till x=0.6 but decreased with increasing x in the range of x>0.6 under O2 and N2 atmosphere. The relative dielectric constant of (1-x)CaTiO3-xLaAlO3 sintered under air atmosphere decreased linearly and the Q.f0 value increased according as x increased. On the other hand, the relative dielectric constant of (1-x)CaTiO3-xLaAlO3 under O2 and N2 atmosphere decreased in the range of x$\leq$0.5 with increasing x, but increased rapidly in the range of x$\geq$0.6. And the Q.f0 value increased till x=0.6 but decreased in the range of x>0.6 with increasing x. The temperature coefficient of resonant frequency had no relation to sintering atmosphere.

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$BaTiO_{3}+xNb_{2}O_{5}$ 세라믹스의 구조 및 유전특성 (The stuctural and dielectric properties of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics)

  • 이상철;류기원;이성갑;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.426-429
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    • 2001
  • The $BaTiO_{3}+xNb_{2}O_{5}$[x=6, 8, 10wt%] ceramics were prepared by conventional mixed oxide method. The structural properties of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics with the sintering temperature and addition of $Nb_{2}O_{5}$ were investigated by XRD and SEM. Increasing the sintering temperature, the $2{\Theta}$ value of BT (110) peak was shifted to the lower degree and intensity of the BN (310) peak was increased. Increasing the addition of $Nb_{2}O_{5}$, the intensity of BN (100) peak was decreased and BN (310), (110) peaks were increased. The grain size of the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$ were almost uniform. In the $BaTiO_{3}+xNb_{2}O_{5}$ ceramics sintered at $1350^{\circ}C$, the dielectric constant and dielectric loss were 5424, 0.02 respectively.

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TiNxOy/TiNx 다층 박막을 이용한 고저항 박막 저항체의 구조 및 전기적 특성평가 (Structural and Electrical Properties High Resistance of TiNxOy/TiNx Multi-layer Thin Film Resistors)

  • 박경우;허성기;;안준구;윤순길
    • 대한금속재료학회지
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    • 제47권9호
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    • pp.591-596
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    • 2009
  • $TiN_xO_y/TiN_x$ multi-layer thin films with a high resistance(${\sim}k{\Omega}$) were deposited on $SiO_2/Si$ substrates at room temperature by sputtering. The $TiN_x$ thin films show island and smooth surface morphology in samples prepared by ${\alpha}$ and RF magnetron sputtering, respectively. $TiN_xO_y/TiN_x$ multi-layer in has been developed to control temperature coefficient of resistance(TCR) by the incorporation of $TiN_x$ layer(positive TCR) inserted into $TiN_xO_y$ layers(negative TCR). Electrical and structural properties of sputtered $TiN_xO_y/TiN_x$ multi-layer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multi-layer films were annealed at various temperatures in oxygen ambient. Samples annealed at $700^{\circ}C$ for 1 min exhibited good TCR value of approximately $-54 ppm/^{\circ}C$ and a stable high resistivity around $20k{\Omega}/sq$. with good reversibility.

소결온도에 따른 (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) 세라믹스의 마이크로파 유전특성 (Microwave Dielectric Properties of (1-X)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) Ceramics with Sintering Temperature)

  • 김재식;최의선;이문기;이영희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제53권2호
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    • pp.67-72
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    • 2004
  • The microwave dielectric properties and microstructure of the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramic were, investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of $1350^{\circ}C$$1425^{\circ}C$. According to the XRD patterns, the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramics have the $Mg_4Ta_2O_{9}$ phase(hexagonal). The dielectric constant($\varepsilon$$_{\gamma}$) and density increased with sintering temperature and mole fraction of x. To improve the quality factor and the temperature coefficient of resonant frequency, TiO$_2$($\varepsilon_{r}$=100, $Q{\times}f_{r}$=40,000GHz, $\tau$$_{f}$=+450 ppm/$^{\circ}C$) was added in $Mg_4Ta_2O_{9}$ ceramics. In the case of the $0.7Mg_4Ta_2O_{9}$-$0.3TiO_2$ and the $0.6Mg_4Ta_2O_{9}$-$0.4TiO_2$ceramics sintered at $1400^{\circ}C$ for 5hr., the microwave dielectric properties were $\varepsilon$$_{\gamma}$=11.72, $Q{\times}f_{r}$=126,419GHz, $\tau_{f}$=-31.82 ppm/$^{\circ}C$ and $\varepsilon_{r}$=12.19, $Q{\times}f_{r}$=109,411GHZ, $\tau$$_{f}$= -17.21 ppm/$^{\circ}C$, respectively.