• Korean Journal of Materials Research
• /
• v.15 no.8
• /
• pp.508-513
• /
• 2005

[ $TiO_2-Fe_2O_3$ ] nanocomposite powders for magnetic photocatalyst were synthesized by sol-gel process, in which $TiO_2$ photocatalytic layer was formed on the surface of $\gamma-Fe_2O_3$ magnetic core. Transmission electron microscopy (TEM) observation and X-ray diffractometry (XRD) analysis revealed that$\gamma-Fe_2O_3$ nanoparticles, $10\~20nm$ in diameter, were coated by $TiO_2$ shell of 5nm in thickness and $TiO_2$ was anatase phase. Also hydroxyl group (-OH) used to decompose organic compounds was detected by Fourier transformation infrared spectrometry(FT-IR) analysis. UV-Visible spectrophotometry results showed that light absorption occurred in the wavelength range of $400\~700 nm$, and the band gap energy $(E_g)$ of powder was 1.8 eV. Finally it was found that the coercivity $(H({ci})$ and saturation magnetization $(M_s)$ of the powder were 79 Oe and 14.8 emu/g, respectively as experimental vibrating sample magnetometer (VSM) measurements.

• Proceedings of the KIEE Conference
• /
• 1995.07c
• /
• pp.1162-1164
• /
• 1995

In this paper, $TiO_2$-xmol%$V_2O_5$, x=0.0, 1.0, 2.0, 3.0 specimens are fabricated by Sol-Gel method. For the improvement of humidity sensitive characteristics for specimens, their microstructures are analysed and the optimum processing condition is established. Grain size increases with substitution rate of $V^{5+}$, on $Ti^{4+}$ site. Their humidity sensitive characteristics is good at 1mol% of $V_2O_5$ rate and heat-treated at $700^{\circ}C$. The capacitance of specimens decreases with frequency.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.1 s.34
• /
• pp.21-26
• /
• 2005

The field effect transistors (FETs) were fabricated ell $Y_2O_3/Si(100)$ substrates by the conventional memory processes and sol-gel process using $(Bi,La)Ti_3O_{12}(BLT)$ ferroelectric gate materials. The remnant polarization ($2Pr = Pr^+-Pr^-$) int Pt/BLT/Pt/Si capacitors increased from $22 {\mu}C/cm^2$ to $30{\mu}C/ cm^2$ at 5V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. There was no drastic degradation in the polarization values after applying the retention read pulse for $10^{5.5}$ seconds. The capacitance-voltage data of $Pt/BLT/Y_2O_3/Si$ capacitors at 5V input voltage showed that the memory window voltage decreased from 1.4V to 0.6V as the annealing temperature increased from $700^{\circ}C$ to $750^{\circ}C$. The leakage current of the $Pt/BLT/Y_2O_3/Si$ capacitors annealed at $750^{\circ}C$ was about $510^{-8}A/cm^2$ at 5V. From the drain currents versus gate voltages ($V_G$) for $Pt/BLT/Y_2O_3/Si(100)$ FET devices, the memory window voltages increased from 0.3V to 0.8V with increasing tile $V_G$ from 3V to 5V.

• Transactions on Electrical and Electronic Materials
• /
• v.6 no.2
• /
• pp.51-56
• /
• 2005

Ferroelectric Bi$_{3.35}$Sm$_{0.65}$Ti$_{3}$O$_{12}$(BSmT) thin films were synthesized using a sol-gel process. Bi(TMHD)$_{3}$, Sm$_{5}$(O$^{i}$Pr)13, Ti(O$^{i}$Pr)4 were used as the precursors, which were dissolved in 2­methoxyethanol. The BSmT thin films were deposited on Pt/TiO$_{x}$/SiO$_{2}$/Si substrates by spin­coating. The electrical properties of the thin films were enhanced using rapid thermal annealing process (RTA) at 600 $^{circ}$C for 1 min in O$_{2}$. Thereafter, the thin films were annealed from 600 to 720 $^{circ}$C in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The remanent polarization value of the BSmT thin films annealed at 720 $^{circ}$C after the RTA treatment was 35.31 $\mu$C/cmz at an applied voltage of 5 V.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.8
• /
• pp.2671-2676
• /
• 2011

Nanocrystalline $TiO_2$ spherical particle (NP) with a dimension of 5 ${\times}$ 5.5 nm and several nanorods (NR) with different aspect ratios (diameter ${\times}$ length: 5 ${\times}$ 8.5, 4 ${\times}$ 15, 4 ${\times}$ 18 and 3.5 ${\times}$ 22 nm) were selectively synthesized by a solvothermal process combined with non-hydrolytic sol-gel reaction. With varying the molar ratio of TTIP to oleic acid from 1:1 to 1:16, the NRs in the pure anatase phase were elongated to the c-axis direction. The prepared NP and NRs were applied for the formation of nanoporous $TiO_2$ layers in dye-sensitized solar cell (DSSC). Among them, NR2 ($TiO_2$ nanorod with 4 ${\times}$ 15 nm) exhibited the highest cell performance: Its photovoltaic conversion efficiency (${\eta}$) of 6.07%, with $J_{sc}$ of 13.473 mA/$cm^2$, $V_{oc}$ of 0.640 V, and FF of 70.32%, was 1.44 times that of NP with a size of 5 ${\times}$ 5.5 nm. It was observed from the transient photoelectron spectroscopy and the incident photon to current conversion efficiency (IPCE) spectra that the $TiO_2$ films derived from NR2 demonstrate the longest electron diffusion length ($L_e$) and the highest external quantum efficiency (EQE).

• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.788-796
• /
• 1996

$TiO_2$ films prepared by RF magnetron sputtering, electron beam evaporation, ion assisted deposition (IAD) and sol-gel method are prepared on c-Si substrate and vitreous silica substrate respectively. From the transmission spectra of $TiO_2$ films on vitreous silica substrate in the spectral region from 190 nm to 900 nm, k($\lambda$) of $TiO_2$ is obtained. Using k($\lambda$) in the interband transition region the coefficients of the quantum mechanical dispersion relation of an amorphous $TiO_2$ and hence n($\lambda$) including the optically opaque region of above fundamental transition energy are obtained. The spectroscopic ellipsometry spectra of $TiO_2$ films in the spectral region of 1.5-5.0eV are model analyzed to get the film packing density variation versus i) substrate material, ii) film thickness and iii) film growth technique. The complex refractive index change of these $TiO_2$ films versus water condensation is also studied. Film micro-structures by SE modelling results are compared with those by atomic force microscopy images and X-ray diffraction data.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2006.10a
• /
• pp.170-173
• /
• 2006

Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_3O_{12}(BST)$ thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin-coating process. In this experiments, $Bi(TMHD)_3$, $Sm_5(O^iPr)_{13}$, $Ti(O^iPr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. Thereafter, the thin films with the thickness, of 240nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 hr, and post-annealed in oxygen atmosphere for 1 hr after deposition of Pt electrode to enhance the electrical properties. The remanent polarization and coercive voltage of the BST thin films annealed at $720^{\circ}C$ were $19.48\;{\mu}C/cm^2$ and 3.40 V, respectively, and a fatigue-free characteristics. As a result, Sm-substituted bismuth titanate films with good ferroelectric properties and excellent fatigue resistance are useful candidates for ferroelectric memory applications.

• Korean Chemical Engineering Research
• /
• v.40 no.6
• /
• pp.725-728
• /
• 2002

A series of fabric filters including P-84, Nomex and PTFE were coated with a commercial $V_2O_5/TiO_2$ catalyst as an effort to develop a functional fabric filter of simultaneous removal of dust and NOx. The coating methods employed are sol-gel coating method, spray coating method and dip coating method, and the effects of coating method on NOx removal performance of functional fabric filter were investigated. Experimental conditions are as follows: the temperatures of $100-250^{\circ}C$ which are the normal operating temperature range of fabric filters, the space velocity of $5,000hr^{-1}$, the oxygen concentration of 6%, and the $NH_3/NO$ ratio of 1.0. Results showed that the sol-gel coating method gave the best NOx removal performance mainly due to its ability in controlling the amount of catalyst and uniform coating.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.42 no.1
• /
• pp.1-8
• /
• 2005

We fabricate PLT(5) thin film on Pt/TiO/sub x/SiO₂/Si substrate by using sol-gel method and investigate leakage current, switching and retention properties. The leakage current density of PLT(5) thin film is 3.56×10/sup -7/A/㎠ at 4V. In the examination of switching properties, pulse voltage and load resistance were 2V～5V and 50Ω～3.3kΩ, respectively. Switching time has a tendency to decrease from 0.52㎲ to 0.14㎲ with the increase of pulse voltage, and also the time increases from 0.14㎲ to 13.7㎲ with the increase of load resistance. The activation energy obtained from the relation of applied pulse voltage and switching time is about 135kV/cm. The error of switched charge density between hysteresis loop and experiment of polarization switching is about 10%. Also, polarization in retention decreases as much as about 8% after l0/sup 5/s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.172-173
• /
• 2006

Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.