• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.809-813
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• 2016

We investigated a SiC-based hydrogen gas sensor with MIS (metal-insulator-semiconductor) structure for high temperature applications. The sensor was fabricated by $Pd/TiO_2/SiC$ structure, and a thin titanium dioxide ($TiO_2$) layer was exploited for sensitivity improvement. In the experiment, dependences of I-V characteristics and capacitance response properties on hydrogen gas concentrations from 0 to 2,000 ppm were analyzed at room temperature to $400^{\circ}C$. As the result, our sensor using $TiO_2$ dielectric layer showed possibilities with regard to use in hydrogen gas sensors for high-temperature applications.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.17-23
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• 1998

$Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$ thin films were prepared by rf magnetron co-sputtering method on $SiO_2/Si$, ITO/glass, and $Pt/Ti/SiO_2/Si$ substrates and post-annealed at the $N_2$ atmosphere by RTA(rapid thermal annerling). The degree of crystallinity of PFN films was identified on various substrates. Electrical properties of PFN films was characterized for $Pt/PFN/Pt/Ti/SiO_2/Si$ structure. The composition of PFN films was estimated by EPMA (electron probe micro analysis). PFN films would be crystallized better to perovskite phase on ITO/glass substrate than $SiO_2/Si$ substrate. This may be induced by the deformation of Pb deficient pyrochlore phase due to Pb diffusion into $SiO_2/Si$ substrate. PFN films on $Pt/Ti/SiO_2/Si$ substrate. PFN films with 5-10% Pb excess were crystallized to perovskite phase from $500^{\circ}C$ temperature. In summary, we show that Pb composition and annealing temperature were critically influenced on crystallinity to perovskite phase. When PFN film with 17% Pb excess was annealed at $600^{\circ}C$ at the $N_2$ atmosphere for 300kV/cm and 88. Its remnant polarization coercive field $2.0 MC/cm^2$ and 144kV/cm, respectively.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.373-378
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• 2000

There was a great difference in the formation kinetics of $TiO_2$ and $Bi_2O_3$ on silicon, but the growth of bismuth titanate (BIT) thin film was mainly limited by the formation of $TiO_2$. As a result, the BIT film was easy to be lack of bismuth. The pulse injection metalorganic chemical vapor deposition (MOCVD) process was introduced in order to overcome this problem by recovering the insufficient bismuth content in the film. By this pulse injection method, bismuth content was increased and also the uniform in-depth composition of the film was attained with a abrupt $Bi_4Ti_3O_{12}/Si$ interface. In addition, the crystallinity of $Bi_4Ti_3O_{12}$ thin film prepared by pulse injection process was greatly improved and the leakage current density was lowered by 1/2~1/3 of magnitude. Clockwise hysteresis of C-V was observed and the ferroelectric switching was confirmed for $Bi_4Ti_3O_{12}$ film deposited by pulse injection method.

• Proceedings of the KSME Conference
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• 2000.04b
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• pp.441-446
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• 2000

Chemical compositions of monodisperse $SiO_2/TiO_2$ multicomponent aggregates were measured for different heights from the burner surface and different mobility diameters of aggregates. $SiO_2/TiO_2$ multicomponent particles were generated in a hydrogen/oxygen coflow diffusion flame from two sets of precursors: TTIP (titanium tetraisopropoxide), TEOS(tetraethylorthosilicate). To maintain 1:1 mole ratio of TTIP:TEOS vapor theoretically, flow rate of carrier gas $N_2$ was fixed at 0.61pm for TTIP, at 0.11pm for TEOS. In situ sampling probe was used to supply particles into differential mobility analyzer(DMA) which was calibrated with using commercial DMA(TSI 3071A) and classifying monodisperse multicomponent particles. Classified particles were collected with electrophoretic collector. The distributions of composition from particle to particle were determined using EDS (energy dispersive spectrometry) coupled with TEM (transmission electron microscope). The chemical (atomic) compositions of classified monodisperse particle were obtained for different heights; z=40mm, 60mm, 80mm. The results suggested that the atomic composition of $SiO_2$ decreased with the height from burner surface and the composition of $SiO_2$ and $TiO_2$ approached to the value of 1 to 1 in far downstream. It is also found that the composition of $SiO_2$ decreases as the mobility diameter of aggregate increases.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1545-1551
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• 1994

Various kinetic parameters of the nucleation and crystallization in anorthite glass (CaO.Al2O3.2SiO2) were calculated by nonisothermal differential thermal analysis. Base glass and glass with TiO2 were prepared by melting. In base glass, the temperature where nucleation can occur ranges from 85$0^{\circ}C$ to 9$25^{\circ}C$ and the temperature for maximum nucleation was 900$\pm$5$^{\circ}C$. In glass with TiO2, the nucleation temperature range was 800~875$^{\circ}C$ and the maximum nucleation temperature was 850$\pm$5$^{\circ}C$. Kissinger equation, Bansal equation, and modified Ozawa equation were used for calculating activation energy for crystallization, Ec. The results showed the same activation energies for both glasses with and without TiO2 in the different equations. The shape of maximum exotherm peak and Ozawa equation were used for Avrami exponent, n. The n value for each glass was 2, indicating that each glass crystallized primarily by bulk crystallization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.317-321
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• 2003

In this study, the structural properties were Investigated for the deposited (Ba,Sr)(Nb,Ti)O$_3$[BSNT] thin films grown on Pt/TiO$_2$/SiO$_2$/Si substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the Ar/02 ratios were Investigated. In the case of the BSNT thin films deposited with condition of 60/40(Ar/O$_2$) ratio, the BaTiO$_3$, SrTiO$_3$ and BaNbO$_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20(Ar/O$_2$) ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.

• Korean Chemical Engineering Research
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• v.50 no.1
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• pp.11-17
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• 2012

Disinfection of Escherichia coli (E. coli) in drinking water was investigated by using $TiO_2$ and $TiO_2-SiO_2$ based photocatalyst prepared by sol-gel method. The disinfection test was carried out in an annular flow reactor with circulating sterile water containing the photocatalysts powder under UV-A irradiation. The disinfection activity was proportional to the anatase`s intensity of crystalline peak of the $TiO_2$ photocatalysts. 100% disinfection of E.coli without endotoxin was achieved with $TiO_2$ coated photocatalytic system under UV-A irradiation within 2 h. However, toxic endotoxine was exist in the disinfection of E.colithe under UV-C irradiation even though 100% disinfection of E.colithe within 30 min, which suggest that $TiO_2$ coated photocatalytic system with UV-A is useful tool for the disinfection of E.coli in drinking water.

• Korean Journal of Materials Research
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• v.5 no.3
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• pp.324-332
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• 1995

전자빔 증착법을 사용하여 Ti과 Co를 Si(100) 단결정, 다결정 Si 및 Si$O_{2}$기판에 증착한 후 90$0^{\circ}C$에서 20초 급속 열처리하여, Co/Ti 이중박막으로부터의 실리사이드화 반응을 조사하였다. 단결정 시편의 경우 Ti의 두께를 5~6mm로 최소화함으로서 두께가 균일하고 기판과의 계면이 평탄하며 비저항이 낮고 열적 안정성이 높은 Co$Si_{2}$ 에피박막을 형성할 수 있었다. 그러나 다결정 시편에는 두께와 계면이 불균일하고 열적으로도 불안정한 다결정의 Co$Si_{2}$와 그 위에 두개의 Co-Ti-Si혼합층이 형성되었다. 한편 Si$O_{2}$ 우에 증착된 Co/Ti은 열처리를 하여도 확산하지 않고 그대로 남아 있어서, Co/Ti 이중박막의 Si$O_{2}$와의 반응성이 미약함을 보여 주었다.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.545-549
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• 2001

Glass-ceramics were prepared and evaluated for the properties to expand the scope of application of the rare earth aluminosilicate glasses, A glass-ceramic added with $TiO_2$as a nucleating agent, which was crystallized internally and it was characterized for physical, thermal and mechanical properties of crystal and residual glass in the glass-ceramic, X-ray diffractometer reveals an unknown crystal as $Nd_{4.6}Si_{7.6}Al_{4.0}Ti_{2.4}O_{32}$ which was found in surface and internal crystals dependent on composition and heat treatments. The thermal expansion coefficients of glass-ceramics were $5.4~6.2{\times}10^{-6}/^{\circ}C$, which increased with increasing crystal growth. Considering that the hardness and the elastic constant of crystal in glass-ceramics are 12GPa and 220GPa, respectively, the application of the glass-ceramics would be applicable for structural materials at elevated temperature.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.110-115
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• 2007

The effects of $TiO_2$ in the glasses on the shrinkage and dielectric properties of BNT-glass composites have been investigated. Without $TiO_2$ addition, BNT-glass composite showed two humps in the shrinkage curve, which are related with crystallization of $BaTi(BO_3)_2\;and\;Bi_4Ti_3O_{12}$. However, the increase of $TiO_2$ addition resulted in the decrease of 2nd hump in the shrinkage. The increased dielectric constant with $TiO_2$ addition might be due to the reduced crystallization of $Bi_4Ti_3O_{12}$. A dielectric constant of 52, a quality factor of 5088 GHz, and a temperature coefficient of resonant frequency of $-0.16ppm/^{\circ}C$ were obtained for a specimen containing $TiO_2$-added glasses, without sacrificing the benefits of high ${\varepsilon}_r$ and low TCF of BNT ceramics.