• 한국세라믹학회지
• /
• 제32권4호
• /
• pp.507-515
• /
• 1995

The monolithic dry gels of the Li2O-Al2O3-TiO2-SiO2 system were prepared by the sol-gel technique using metal alkoxides as starting materials to obtain monolithic glass-ceramics at low temperature without melting. Activation energy for the crystal growth of the gel with 6.05% TiO2, nucleating ageng, for the preparation of Li2O-Al2O3-TiO2-SiO2 system glass-ceramic was 101.14kcal/mol. As a result of the analysis of DTA & XRD, it was confirmed that the crytallization of Li2O-Al2O3-TiO2-SiO2 system glass-ceramic was the most efficient when 6.05% TiO2, nucleating agent, was added. $\beta$-eucryptite solid solution crystals and $\beta$-spodumene solid solution crystals were detected in the sample heat treated above 85$0^{\circ}C$. The sintered gel heat treated at 85$0^{\circ}C$ had the specific surface area of 185$m^2$/g, the pore volume of 0.19cc/g and the average pore radius of 20.8$\AA$. This shows that the sintered gel is also comparatively porous material. In temperature range of 25~85$0^{\circ}C$ thermal expansion coefficient of the specimen which was crystallized for 10hrs at 85$0^{\circ}C$ was 6.7$\times$10-7/$^{\circ}C$, which indicated that the crystallized specimen was turned out to be the glass-ceramic with low thermal expansion.

• 한국세라믹학회지
• /
• 제44권3호
• /
• pp.137-141
• /
• 2007

$La_{2}O_{3}-TiO_{2}-SiO_{2}$ glass, a type that could not obtained so far by the conventional melting method, was prepared successfully using a sol gel process. Glass derived with the sol-gel process has compositions of $5La_{2}O_{3}-5TiO_{2}-90SiO_{2},\;5La_{2}O_{3}-10TiO_{2}-85SiO_{2}$, and $5La_{2}O_{3}-20TiO_{2}75SiO_{2}$. The UV-visible absorption edge of all glass compositions was below 400 nm. The measured density is in the range of 2.55-2.89, and was nearly identical to the calculated density and the refractive index of the glasses derived from the sol-gel ranges from 1.545 to 1.645. The molar additive coefficient of $TiO_{2}$ measured in this ternary system is lower than the calculated value, while the value of $La_{2}O_{3}$ is higher.

• Bulletin of the Korean Chemical Society
• /
• 제33권6호
• /
• pp.1895-1899
• /
• 2012

$SiO_2$-coated $TiO_2$ composite materials with enhanced photocatalytic activity under UV light was prepared by a simple catalytic hydrolysis method. XRD, TEM, UV-vis spectroscopy, Photoluminescence, FT-IR and XP spectra were used to characterize the prepared samples. The obvious shell-core structure was shown for obtained $SiO_2$@$TiO_2$ sample. The average thickness of the $SiO_2$ coating layer was 2-3 nm. The interaction between $SiO_2$ and $TiO_2$ restrained the recombination of excited electrons and holes. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under UV light. The photocatalytic activity of $SiO_2$@$TiO_2$ was much higher than that of P25 and mechanical mixing sample $SiO_2/TiO_2$. The possible mechanism for the photocatalysis was proposed.

• 한국진공학회지
• /
• 제16권6호
• /
• pp.446-452
• /
• 2007

R.F. magnetron-sputtering 방법에 의해 $(Pb_{1.1},La_{0.08})(Zr_{0.65}.Ti_{0.35})O_3$ 박막을 $Pt/Ti/SiO_2/Si$, $TiO_2(interlayer)/Pt/Ti/SiO_2/Si$ 기판에 증착하고, $TiO_2$ interlayer에 의한 PLZT 박막의 특성을 고찰 하였다. $TiO_2$ interlayer의 증착조건을 변화시켜가며 단일상의 anatase 상과 rutile 상을 증착하였고, 그 위에 증착시킨 PLZT 박막의결정성을 x-ray diffraction(XRD)을 통해 분석하였다. 또한 $TiO_2$ interlayer에 의한 $PLZT-TiO_2$, $TiO_2-Pt$ 박막의 계면상태를 고찰하기 위해 glow discharge spectrometer(GDS) 분석을 행하였고, PLZT의 강유전 특성을 고찰하기 위해 전기적 측정을 행하였다. $TiO_2$ anatase 단일 상에 증착한 PLZT의 경우 (110) 방향으로 우선 배향됨을 알 수 있었고, 12.6 ${\mu}C/cm^2$의 잔류분극 값을 나타내었다.

• 한국표면공학회지
• /
• 제34권2호
• /
• pp.135-141
• /
• 2001

Arc-melted Ti-6Al-4V, Ti-4Fe and Ti-(1,2) Si alloys were oxidized at 700, 800, 900 and $1000^{\circ}C$ in air. The oxidation resistance of Ti-4Fe was comparable to that of Ti-6Al-4V, while the oxidation resistance of Ti-(1,2) Si was superior to that of Ti-6Al-4V. Ti-2Si displayed the best oxidation resistance among the four alloys, but failed after oxidation at $1000^{\circ}C$ for 17h. The oxide scale formed on Ti-6Al-4V, Ti-4Fe and Ti-(1,2)Si consisted of ($TiO_2$ and a small amount of $Al_2$$O_3$), ($TiO_2$ and a small amount of dissolved iron), and ($TiO_2$ plus a small concentration of amorphous $SiO_2$), respectively. The oxide grains of the surface scale of the four alloys were generally fine and round.

• 센서학회지
• /
• 제7권5호
• /
• pp.364-371
• /
• 1998

Field programmable gate array (FPGA)의 전압 프로그램 요소(voltage programmable link)로써 사용될 새로운 안티퓨즈를 제조하였다. 제조된 안티퓨즈는 Al/$BaTiO_3/SiO_2$/TiW-실리사이드 구조를 갖는다. 안티퓨즈의 프로그램 전압은 $BaTiO_3$의 증착 두께를 조절함으로써 정확하게 조절할 수 있었다. $BaTiO_3(120{\AA})$/$SiO_2(120{\AA})$의 안티퓨즈에서 TiW-실리사이드 전극에 (-)극성을 인가하여 측정된 프로그램 전압은 14.4 V였으며, on-저항은 $40-50{\Omega}$의 값을 갖는다. 안티퓨즈의 전류-전압 특성은 Frenkel-Poole 전도 기구를 따르고 있으며, 그 특성은 인가 전압의 극성에 따라 차이를 보였다. 이것은 Al/$BaTiO_3$계면과 TiW-silicide/$SiO_2$계면 특성이 다르기 때문이다.

• 한국안전학회지
• /
• 제20권4호
• /
• pp.29-33
• /
• 2005

In this paper, reflectance and the dielectric characteristics for $P_2O_5-ZnO-BaO$ system and $SiO_2-ZnO-B_2O_3$ system have been investigated as a function of contents of $TiO_2$. The reflectance was decreased with increasing the contents of $TiO_2$ and the reflectance of $P_2O_5-ZnO-BaO$ system was lowered than that of $SiO_2-ZnO-B_2O_3$ system. The dielectric constant of $P_2O_5-ZnO-BaO$ system was higher than $SiO_2-ZnO-B_2O_3$ system, and the dielectric constant in the both system was increased with increasing of $TiO_2$ contents. This can be explained as the space charge effects. These results are could be applied to the under plate dielectrics of PDP required high reflective ratio and breakdown strength.

• 한국표면공학회지
• /
• 제37권6호
• /
• pp.360-365
• /
• 2004

Ti$_3$SiC$_2$ material was synthesized via the powder metallurgical route, and oxidation tested between 900 and $1200^{\circ}C$ in air for up to 100 hr. The oxidation of $Ti_3$$SiC_2$ material resulted in the formation of $TiO_2$and $SiO_2$, accompanying the evolution of CO or $CO_2$ gases from the initial stage of oxidation. The oxidation resistance of $Ti_3$$SiC_2$ mainly owes the protectiveness of highly stoichiometric $SiO_2$. During the initial stage of oxidation, the dominant reaction was the inward transport of oxygen into the matrix. As the oxidation progressed, an outer $TiO_2$ layer and an inner ( $TiO_2$ + $SiO_2$) mixed layer formed. Between these layers and inside the oxide scale, numerous fine voids formed. Numerous, fine oxide grains formed at $900^{\circ}C$ developed into the outer coarse $TiO_2$ grains and an inner fine ($TiO_2$ + $SiO_2$) mixed grains at the higher temperatures. The oxidation resistance of$ Ti_3$SiC$_2$ progressively deteriorated as the oxidation temperature increased, forming thick scales above $1000^{\circ}C$. The outer coarse $TiO_2$ grains formed above $1100^{\circ}C$ grew rapidly mainly along (211).

• 공업화학
• /
• 제7권4호
• /
• pp.645-652
• /
• 1996

본 연구는 $H_2S$를 $TiO_2/SiO_2$ 촉매상에서 산소와의 직접 산화 반응을 통해 원소 황의 형태로 제거하는 반응에 관한 것이다. 순수한 $TiS_2$와 $Ti(SO_4)_2$를 사용한 반응 실험과 순수한 $TiO_2$에 대한 주기적 온도 조작 실험 결과로부터 $TiO_2$는 황 회수 공정에서 사용되는 촉매의 비활성화의 주원인으로 알려진 sulfation이나 sulfidation에 대해 매우 안정한 것으로 나타났다. $TiO_2/SiO_2$촉매에서 $TiO_2$의 담지랑이 증가함에 따라 $H_2S$의 전화율이 증가하였고, 원소 황의 선택도는 아주 소폭으로 감소하였다. 반응 실험 결과 $O_2/H_2S$의 비가 증가할수록 원소 황의 선택도는 크게 감소하였다. 10 wt.% $TiO_2/SiO_2$ 촉매는 화학 양론비의 조성($H_2S$=5 vol.% $O_2$=2.5 vol.%)의 반응물에 10 vol.%의 수증기를 첨가한 경우 활성과 선택도가 감소하였으나 여전히 80% 이상의 원소 황 수율을 유지하고 있었다.

• 대한전기학회논문지
• /
• 제45권2호
• /
• pp.242-248
• /
• 1996

The properties of TiN/TiSi$_{2}$ bilayer formed by a rapid thermal annealing is investigated when thin SiO$_{2}$ film exists at the Ti-Si interface. The competitive reaction for the TiN/TiSi_2 bilayer occurs above 600 .deg. C. The thickness of the TiSi$_{2}$ layer decreases with increasing SiO$_{2}$ film thickness and also decreases with increasing anneal temperture When the competitive reaction for the TiN/TiSi$_{2}$ bilayer is occured by rapid thermal annealing, the composition of TiN layer represents TiN$_{x}$O$_{y}$ due to the SiO$_{2}$ layer at the Ti-Si interface but the structures of the TiN and TiSi$_{2}$ layers were not changed.d.d.