High Temperature Oxidation Behavior of TiSiC

Ti$_3$SiC$_2$ material was synthesized via the powder metallurgical route, and oxidation tested between 900 and $1200^{\circ}C$ in air for up to 100 hr. The oxidation of $Ti_3$$SiC_2$ material resulted in the formation of $TiO_2$and $SiO_2$, accompanying the evolution of CO or $CO_2$ gases from the initial stage of oxidation. The oxidation resistance of $Ti_3$$SiC_2$ mainly owes the protectiveness of highly stoichiometric $SiO_2$. During the initial stage of oxidation, the dominant reaction was the inward transport of oxygen into the matrix. As the oxidation progressed, an outer $TiO_2$ layer and an inner ( $TiO_2$ + $SiO_2$) mixed layer formed. Between these layers and inside the oxide scale, numerous fine voids formed. Numerous, fine oxide grains formed at $900^{\circ}C$ developed into the outer coarse $TiO_2$ grains and an inner fine ($TiO_2$ + $SiO_2$) mixed grains at the higher temperatures. The oxidation resistance of$ Ti_3$SiC$_2$ progressively deteriorated as the oxidation temperature increased, forming thick scales above $1000^{\circ}C$. The outer coarse $TiO_2$ grains formed above $1100^{\circ}C$ grew rapidly mainly along (211).

TiSiC의 고온산화거동