• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.509-512
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• 1999

Ferroelectric Sr$_2$(Nb, Ta)$_2$O$_{7}$(SNTO), La$_2$Ti$_2$O$_{7}$(LTO) thin films were prepared by sol-gel processes. SNTO, LTO thin films were spin-coated on Pt/TiO$_2$/SiO$_2$/Si(100). Pt/Ti/SiO$_2$/Si(100). PT/ZrO$_2$/SiO$_2$/Si(100) substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.ces.

• Bulletin of the Korean Chemical Society
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• v.19 no.11
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• pp.1185-1188
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• 1998

Layered nanocomposite, SiO2/TiO2 sol pillared clay, has been prepared by the ion exchange reaction of Na' ion in montmorillonite with positively charged mixed SiO2/TiO2 sol. The nanosized sol particles were synthesized by mixing SiO2 sol solution with TiO2 one, which is obtained by acidic hydrolysis of TEOS and TiCl4, respectively. From powder XRD, the basal spacing (d001) of the sample calcined at 400 ℃ was found to be ca. 60 Å, due to the multistacking of nanosized SiO2 and TiO2 sol particles, which was confirmed by the pore size analysis from 129Xe NMR and micropore analysis calculated from nitrogen adsorption. The BET specific surface area shows the value of 684 m2g-1 (Langmuir 1115 m2g-1), which is the highest among various pillared clays ever reported previously, and the total porosity is found to be 0.51 mlg-1, and the pores are mainly composed of micropore with a size of ca. 11.8 Å. This result agrees with the adsorption capacity obtained from water adsorption. According to diffuse reflectance ultraviolet-visible spectroscopy, it is found that the TiO2 particles stabilized in the interlayer space of montmorillonite are quantum-sized of ca. 20 Å.

• Journal of the Korean institute of surface engineering
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• v.33 no.1
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• pp.3-9
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• 2000

Arc-melted alloys of TiAl-(o.25, 0.5, 1.0at%) Si were isothermally oxidized at 800, 900 and $1000^{\circ}C$ in air for 60hr. It was found that the oxidation resistance of the prepared TiAl-Si alloys was much better than that of pure TiAl, being progressively increasing with an increase in the Si content. This was attributed to the formation of $SiO_2$in addition to ($TiO_2$+$Al_2$$O_3$) oxides which formed in TiAl alloys with and without silicon additions. However, the silica formation within the oxide layer unfortunately accelerated the oxide scale spallations. During oxidation, all the elements in the base alloy diffused outward, whereas oxygen from the atmosphere diffused inward. The oxides were primarily composed of an outer thick $TiO_2$layer, an intermediate diffuse $Al_2$$O_3$layer and an inner $TiO_2$layer. A small amount of $SiO_2$was present all over the oxide scale and some voids were found around the intermediate layer.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2006.11a
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• pp.166-168
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• 2006

$Si_3N_4/SiC$ composite ceramics was sintered in order to investigate their bending strength behavior after crack healing. $Y_2O_$ and $TiO_2$ power was added as sintering additives to enhance it's sintering property. A three-point bending specimen was cut out from sintered plates. About $100\;{\mu}m$ semi-circular surface cracks were made on the center of the tension surface of the three-point bending specimen using Vickers indenter. After the crack-healing processing from $500^{\circ}C$ to $1300^{\circ}C$, for 1 h, in air, the bending strength behavior of these crack-healed specimen coated with $SiO_2$ colloidal were determined systematically at room temperature. $Si_3N_4/SiC$ ceramics using additive powder ($Y_2O_3+TiO_2$) was superior to that of additive powder $Y_2O_3$. The additive powder $TiO_2$ exerted influence at growth of $Si_3N_4$. The optimum crack healing conditions coated $SiO_2$ colloidal were $1000^{\circ}C$ at $Si_3N_4/SiC$ using additive powder ($Y_2O_3+TiO_2$), and $1300^{\circ}C$ at $Si_3N_4/SiC$ using additive powder $Y_2O_3$.

• Journal of Powder Materials
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• v.29 no.3
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• pp.207-212
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• 2022

Nanosized rutile titanium dioxide (TiO₂) is used in inorganic pigments and cosmetics because of its high whiteness and duality. The high quality of the white pigments depends on their surface coating technique via the solgel process. SiO₂ coatings are required to improve the dispersibility, UV-blocking, and whiteness of TiO₂. Tetraethyl orthosilicate (TEOS) is an important coating precursor owing to its ability to control various thicknesses and densities. In addition, we use Na₂SiO₃ (sodium silicate) as a precursor because of its low cost. Compared to TEOS, which controls the pH using a basic catalyst, Na₂SiO₃ controls the pH using an acid catalyst, giving a uniform coating. The coating thickness of TiO₂ is controlled using a surface modifier, cetrimonium bromide, which is used in various applications. The shape and thickness of the nanosized coating layer on TiO₂ are analyzed using transmission electron microscopy, and the SiO₂ nanoparticle behavior in terms of the before-and-after size distribution is measured using a particle size analyzer. The color measurements of the SiO₂ pigment are performed using UV-visible spectroscopy.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.62.2-62.2
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• 2000

• Corrosion Science and Technology
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• v.12 no.3
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• pp.119-124
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• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.427-431
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• 2011

Hybrid $SiO_2-TiO_2$ photoelectrode with different type of layers was investigated in dye-sensitized solar cells (DSSC). Use of a thin layer of nanocrystalline $TiO_2$ would imply reduction in the amount of dye coverage, however, lower amount of dye in the thin films would imply fewer electron generation upon illumination. So, thus, it becomes necessary to include a $SiO_2-TiO_2$ layer for increase light harvesting effect such that the lower photon conversion due to thin layer could be compensated. In this paper reports the use of transparent high surface area $TiO_2$ layer and an additional $SiO_2-TiO_2$ layer, thus ensuring adequate light harvesting in these devices. The best solar conversion efficiency 6.6% under AM 1.5 was attained with a multi-layer structure using $TiO_2$ layer/$SiO_2-TiO_2$ layer/$TiO_2$ layer for the light harvesting and this had resulted to about 44% increase in photocurrent density of dye-sensitized solar cells.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.139-144
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• 2016

The dependence of the microwave dielectric properties of the glass-ceramic composite $0.9CaMgSi_2O_6-0.1MgSiO_3$ on the crystallization behaviour was investigated as functions of the $TiO_2$ content and heat-treatment temperature. The crystallization behaviour of the specimens was evaluated via a combination of the Rietveld and reference-intensity ratio methods. For specimens with a $TiO_2$ content of up to 1 wt.%, a monoclinic diopside phase was formed, whereas a secondary $TiO_2$ phase was formed with further increases in the $TiO_2$ content. The quality factor (Qf) of the specimens was strongly dependent on the degree of crystallization. The highest Qf value was obtained with a $TiO_2$ content of 0.5 wt.%, which was improved by increasing the heat-treatment temperature. The dielectric constant (K) was affected by the size of the crystallites and the $TiO_2$ content. The temperature coefficient of the resonant frequency (TCF) was nearly constant for all of the specimens, regardless of the $TiO_2$ content or heattreatment temperature.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.44-49
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• 1999

In order to improve the oxidation resistance of $Ti_3Al$, Ti-25at.%Al composites containing dispersed particles of 15wt.%SiC were prepared by a tubular mixing-spark plasma sintering method. The sintered composites had $Ti_3Al$, SiC, $Ti_5Si_3$ and TiC. The presence of $Ti_5Si_3$ and TiC indicates that some of SiC particles reacted with Ti to from more stable phases. From oxidation tests at 800, 900 and $1000^{\circ}C$ under 1 atm of pure oxygen, it was found that the oxidation rate of Ti3Al was effectively reduced by the addition of SiC. The scale was primarily composed of an outer $TiO_2$ layer having some $Al_2O_3 $islands, an intermediate relatively thick $Al_2O_3 $ layer, and an inner $TiO_2+Al_2O_3+SiO_2$ mixed layer. Beneath the scale, Kirkendall voids were seen.