• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.731-735
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• 2001

S $r_{0.89}$B $i_{2.4}$T $a_2$ $O_{9}$ (SBT) thin films are deposited on Pt-coated electrode(Pt/Ti $O_2$/ $SiO_2$/Si) using RF magnetron sputtering method. In the XRD pattern, the SBT thin films had (105) orientation. As annealing temperature was increased from $600^{\circ}C$ to 85$0^{\circ}C$, the intensities of peak were increased. In the SEM images, Bi-layered perovskite phase was crystallized above $650^{\circ}C$ and rod-like grains grew above 75$0^{\circ}C$. The maximum remanent polarization and the coercive electric field at annealing temperature of 75$0^{\circ}C$ are 11.60$\mu$C/$\textrm{cm}^2$ and 48kV/cm respectively. The dielectric constant and leakage current density at annealing temperature of 75$0^{\circ}C$ are 213 and 1.01x10$^{-8}$ A/$\textrm{cm}^2$, respectively. The fatigue characteristics of SBT thin filmsdid not change up to 10$^{10}$ switching cycles.s.s.

• KEPCO Journal on Electric Power and Energy
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• v.1 no.1
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• pp.115-120
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• 2015

$K_2CO_3$-based dry regenerable sorbents were prepared by spray-drying techniques to improve mass produced $K_2CO_3-Al_2O_3$ sorbents (KEP-CO2P, hereafter), and then tested for their $CO_2$ sorption capacity by a $2,000Nm^3/h$ (0.5 MWe) $CO_2$ capture pilot plant built for Unit 3 of the Hadong thermal power station in 2010. Each of the sample sorbents contained 35 wt.% $K_2CO_3$ as the active materials with various support materials such as $TiO_2$, MgO, Zeolite 13X, $Al_2O_3$, $SiO_2$ and hydrotalcite (HTC). Their physical properties and reactivity were tested to evaluate their applicability to a fluidized-bed or fast transport-bed $CO_2$ capture process. The $CO_2$ sorption capacity and percentage utilization of $K_2CO_3$-MgO based sorbent, Sorb-KM2, was $8.6g-CO_2/100g$-sorbents and 90%, respectively, along with good mechanical strength for fluidized-bed application. Sorbs-KM2 and KT were almost completely regenerated at $140^{\circ}C$. No degradation of Sorb-KM by $SO_2$ added as a pollutant in flue gas was observed during a cycle test.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.41 no.2
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• pp.207-214
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• 1996

This study was conducted to obtain fundamental information on forage sorghum breeding in forage crop field of Livestock Experiment Station at Suwon from 1986 to 1991. The charcterization of sorghum germplasm was performed through 1986 to 1987, and after parental lines were selected from diverse sorghum germplasm on the basis of flowering date, plant height and several morphological characters for forage sorghum Fl hybrids. The range of variation of 50% flowering date and plant height were greater in order of forage sorghum sudangrass and male sterile line of grain sorghum. The average flowering date was earlier in sudangrass and male sterile line of grain sorghum than forage sorghum lines from the tested sorghum germplasms. And the average plant height was tall in order of forage sorghum, sudangrass and male sterile lines of grain sorghum. There were remarkable morphological variations between sudangrass lines and male sterile lines of grain sorghum such as plant color, leaf midrib color, glume color, seed coat color, head compactness and shape, awns, grain covering and 100 seed weight.

• Journal of the Korean Ceramic Society
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• v.22 no.1
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• pp.40-46
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• 1985

The effect of calcining temperature ranged from $700^{\circ}C$ to 110$0^{\circ}C$ on sintering characteristics of morphotropic $Pb(Zr_{0.53}Ti_{0.47})O_3 doped with $Nb_2O_5$ has been investigated. The ratio of sintered grain size to calcined grain size decreased as the calcining temperature increased. The hardness as well as the sintered density of the samples reached a maximum at about 90$0^{\circ}C$. The X-ray diffraction pattern of the sintered sample showed both tetragonal and rhombohedral phases. The tetragonal phases intensity increased with the calcining temperature going through a maximum at about 90$0^{\circ}C$ while the rhombohedral phase intensity remained uneffected. The both intensity were about the same at 90$0^{\circ}C$ The dielectric constant of the sintered samples reached a maximum um while the dielectric dissipation factor showed a minimum at the calcining temperature of about 100$0^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.41-44
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• 1998

Dual mode resonators were fabricated using high temperature superconductor. The deposited material was $Y_1Ba_2Cu_3O_{7-x}$(YBCO) on MgO(100) substrate using pulsed laser deposition. Dual mode resonators were patterned by standard photolithography process and wet etching. At the back-side of the substrate, the ground plane with the metal layer of Ti and Ag was fabricated. The transition temperatures of YBCO films were 85-88 K, and network analyzer was used for testing the performance of the resonators. The input/output feedline angles of each resonator were $60^{\circ}$and $100^{\circ}$. The resonant frequency of resonators was 10 GHz. In this paper, dual mode resonator was fabricated for the application of satellite communication.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.567-567
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• 2012

Since the carbon nanotubes (CNTs) have extraordinary material properties, many researchers are trying to make a practical application in various fields [1]. In particular, the high surface area of CNTs was fascinated for nano-template on the catalytic system. $RuO_2$ coated CNTs are useful functional nano-composites in many applications, including super capacitors, fuel cells, biosensors, and field emitters. However, the research of interaction between CNTs and $RuO_2$ was not satisfied with various fields [2]. In this study, we will introduce the change of chemical and electrical state of $RuO_2$/CNTs at different temperatures by synchrotron radiation photoemission spectroscopy (SRPES). The t-MWCNTs used in this experiment were grown on the Ni/TiN/Si substrates by chemical vapor deposition. $RuO_2$ of 4-20 nm in thickness was deposited on the t-MWNTs by sputter. The SRPES measurements were carried out at the 4B1 beamline of the Pohang Accelerator Laboratory in Korea. The result of XPS measurement indicates that the deposited $RuO_2$ on the CNTs was reduced into pure Ru at above $300^{\circ}C$. And we confirmed that the effective work function of $RuO_2$/CNTs was decreased with increasing temperature.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.47 no.3
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• pp.167-173
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• 2002

This experiment was conducted to figure out the change of soil physical properties, rice growth and yield with the years of continuous cultivation in direct dry-seeding and no-tillage machine transplanting. Experiments were conducted at NHAES(National Honam Agricultural Experiment Station, RDA, Iksan, Cheon Buk Province, South Korea) with a rice variety "Dongjinbyeo" from 1995 to 2000. In no-tillage machine transplanting cultivation, organic matter in soil was higher than that on direct dry-seeding and was significantly high in topsoil. Problematic weed species were E. crus-galli B., A. keisak H., and L. japonica M. Plant height and tiller number m-2 were higher in common-tillage during the total growth duration. The highest weedy rice occurrence of 27.5% was observed in live years' continuous direct dry-seeding and followed by 6.2%, in four years', and 3.7%, in three years'. The highest yield reduction of 38% was observed in five years' continuous direct dry-seeding. The reduction may resulted from the competition between weedy rice and cultivated rice.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.33-39
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• 1998

The BST (Ba$_{1-x}$ Sr$_{x}$TiO$_{3}$)(50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively The BST thin film anealed at 800.deg. C for 2 min has pure perovskite structure and good surface roughness of 16.1.angs.. We estimate that the thickness and dielectric constant of interface layer between BST film and electrode are 3nm and 18.9, respectively, by measuring the capacitance with various film thickness. As the film thickness increases form 80nm to 240nm, the dielectric constant at 10kHz increases from 199 to 265 and the leakage current density at 200kV/cm decreases from 0.682.mu.A/cm$^{2}$ to 0.181 .mu.A/cm$^{2}$. In the case of 240nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5fC/.mu.m$^{2}$ and 0.182.mu.A/cm$^{2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.or.

• Progress in Superconductivity
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• v.9 no.1
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• pp.85-90
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• 2007

Lanthanum aluminate($LaAlO_3$) film has been prepared on single crystal and metal substrates by dip coating method. Lanthanum acetate and aluminum were prepared via ligand exchange starting from lanthanum nitrate hexahydrate and aluminum nitrate hexahydrate in acetate glacial acetic acid solution after being refluxed. Coating solution was obtained by diluting the gel with methanol and 2-methoxyethanol to adjust the total cation concentration to 0.67 M. Precursor coated film was prepared by dip-coating with a speed of 25 mm/min on various substrates such as $LaAlO_3$ (001), MgO(001), $SrTiO_3$(001) single crystal, LMO/MgO/Ni-alloy. Thin films have been obtained by heat treating the precursor film at various temperatures from $600^{\circ}C{\sim}900^{\circ}C$ and various heating rate from $0.83^{\circ}C/min{\sim}1.25^{\circ}C/min$ under $Ar/O_2$ mixture containing 1000ppm oxygen. The films have been characterized by scanning electronic microscopy (SEM) and X-ray diffraction (XRD). XRD analysis for the prepared film showed that $LaAlO_3$ thin films with a preferred orientation of (100) plane parallel to substrate surface were obtained at $800^{\circ}C(1.11\;^{\circ}C/min)$ on LMO/MgO/Ni-alloy substrate, but the intensity decreased with the increase of heat treatment temperature.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.12 no.1
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• pp.245-248
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• 2012

In this paper, the optimized growing conditions of PZT thin films on low temperature co-fired ceramics (LTCC) substrates are studied. The LTCC technology is an emerging one in the fields of mesoscale (from 10 um to several hundred um) sensor and actuator against silicon based technology due to low cost, high yield, easy manufacturing of 3 dimensional structure, etc. The LTCC substrates with thickness of 400 um are fabricated by laminating 100 um green sheets using commercial power (NEG, MLS 22C). The Pt/Ti bottom electrodes are deposited on the LTCC substrates, then the growing conditions of PZT thin films using rf magnetron sputtering method are studied. The growing conditions are tested under various rf power and gas ratio of oxygen to argon. And the crystallization and ingredient of PZT films are analyzed by X-ray diffraction method (XRD) and energy dispersive spectroscopy (EDS). The optimized growing conditions of PZT thin films are rf power of 125W, Ar/O2 gas ratio of 15:5.