• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.52-52
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• 2003

Gbit급 DRAM 커패시터의 고유전물질로 각광받고 있는 (Ba,Sr)TiO$_3$〔BST〕의 하부전극 물질로서 (Ba,Sr)RuO$_3$〔BSR〕의 적용 가능성을 연구하였다. BSR은 BST와의 구조적, 화학적 유사성으로 인하여, BST와 하부전극사이의 저유전 계면반응 충의 생성을 최소화함으로서 향상된 전기적 특성을 구현 할 수 있다. 본 연구에서는 methoxyethoxytetramethylheptanedionate(METHD) 소스를 적용한 유기 화학 기상 증착법(MOCVD)법을 이용하여 BSR을 증착하였으며, 증착된 BSR의 특성을 x-ray photoelectron spectroscopy(XPS) 분석법으로 기화기 온도 변화에 따른 BSR박막의 특성을 분석하였다. 증착온도 55$0^{\circ}C$에서 소스의 기화효율에 영향을 미치는 기화기온도를 변화시켜가며 BSR박막의 증착실험을 진행하였으며 소스 유입 속도 0.075sccm, 증착 온도 55$0^{\circ}C$, Ar/O2 = 200/350 sccm일 때 기화기 온도를 260~28$0^{\circ}C$까지 1$0^{\circ}C$간격의 변화로 증착실험을 수행하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.145-145
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• 2017

음극재에 사용되는 타이타니아 나노튜브($TiO_2$ nanotubes)는 높은 종횡비를 가지고 있으며, 기계적인 강도가 우수하고 화학적인 안정성이 높다. 그러나 낮은 전기전도도와 상대적으로 넓은 밴드갭(bandgap)은 다양한 활용 분야에 이 물질이 활용되는 것을 제한하고 있는 상황이다. 전기 화학적 분야에서 광화학 반응 또는 과전압에서 밴드갭을 줄이기 위한 타이타니아 나노튜브의 나노 구조 변형에 대한 많은 연구가 있어왔다. 본 연구에서는 산화 몰리브덴(Molybdenum oxide)을 촉매로 사용하여 타이타니아 나노튜브에 전기충격법을 이용하여 도핑했다. 생성된 타이타니아 나노튜브를 $450^{\circ}C$에서 1시간 30분 동안 가열하여 타이타니아 나노구조를 아나타제(anatase) 구조로 변형켰다. 타이타니아 나노튜브의 구조적인 변화를 scanning electron microscopy(SEM), energy-dispersive X-ray spectroscopy(EDS) 등을 통해 측정했고 UV-Visiblespectroscopy를 통해 도핑된 타이타니아 나노튜브의 밴드갭을 측정하였다. 몰리브덴이 도핑된 타이타니아 나노튜브는 기존의 타이타니아 나노튜브가 가지는 밴드갭인 3.0 ~ 3.2eV 범위보다 더 낮아진 2.6 ~ 2.8eV의 범위를 가지는 것을 확인하였다. 몰리브덴이 도핑된 타이타니아 나노튜브는 다양한 광촉매 분야에 적용될 수 있을 것으로 예상된다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.35.1-35.1
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• 2011

수열합성법으로 제작된 ZnO 나노와이어는 저온 MBE (Molecular Beam Epitaxy) 방식과 달리 Ti, Au와 같은 촉매로 부터 성장이 끝난뒤 나노와이어 끝에 남는 촉매를 제거해야할 필요가 없으며, 저온에서 합성이 가능하기 때문에 현재 연구가 많이 되고 있는 방법중에 하나이다. 본 연구에서는 수열 합성법을 이용하여 금속촉매 또는 AZO로 seed를 형성한 후 기판 위에 균일한 크기의 ZnO 나노막대를 성장시키고 성장밀도 및 길이의 간편한 제어를 하였다. 이를 위해 계면활성제인 PEI (Polyethyleneimine) 첨가 및 Chloride ($Cl_-$)를 조절하여 ZnO 나노와어의 성장밀도를 조절 하고자 하였다. 실험방법으로는 전구체인 Zn(NO3)2${\cdot}$6H2O와 HMT에 Chloride 계열인 Ammonium chloride 와 Kcl 의 몰농도를 각각 조절하고 PEI를 첨가하여, ZnO 나노와이어를 성장하였다. 성장된 ZnO 나노와이어의 특성을 평가하기 위해 field emission scanning electron microscopy (FE-SEM)을 이용하여 광학적인 특성을 측정하였으며, 결정성을 조사하기 위해 X-ray diffraction (XRD)을 이용하여 분석하였다. 또한 scanning PL 장비를 통해 photoluminescence양을 측정하고 ZnO 나노와이어의 응용 가능성을 평가하였다.

• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.121-127
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• 1998

In this paper, to develop PTCR(Positive Temperature Coefficient of Resistance) thermistor with high withstanding voltage, Ca were added to. the compositions of $(Ba_{0.9165-X}-Sr_{0.08}-Ca_X-Y_{0.0035})TiO_3+MnO_2$ 0.02wt%+$SiO_2$ 0.5wt%. the effects of Ca additions were researched according the increasing of Ca from 0[mol%] to 20[mol%], and the electrical properties were investigated. As increasing Ca additions from 0[mol%] to 20[mol%], the grain size of the specimens was reduced from 11.1[${\mu}m$] to 6.15[${\mu}m$], and also the sintered density was reduced from 5.43[$g/cm^3$] to 5.05[$g/cm^3$] and their the breakdown voltages were increased from 163[V/mm] to 232[V/mm]. It is shown that the breakdown voltage was increased with amount of Ca additions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.366-367
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• 2006

Different orientated SBN thin films were deposited by Ion Beam Sputtering, and electric properties were measured on each orientation. Ferroelectric $Sr_xBa_{1-x}Nb_2O_6$(SBN) has excellent electro-optic, photo-refractive, piezoelectric, pyroelectric properties. SBN thin film has been deposited by various method, of sol-gel, PLD, CVD, sputtering, etc.. To avoid lead pollution of Pb-system perovskite ferroelectric materials. SBN thin films were fabricated for pyroelectric IR sensor. Using the ceramic target of the same composition and Pt(100)/$TiO_2/SiO-2$/Si(100) substrate, crystallization and orientation behavior as well as electric properties of the films were examined. Seed layer and thin films thickness was controlled to observe the effect on preferred orientation. We measured I-V, C-V, P-E hysteresis to characterize electric-properties on each orientations.

• 한국초전도ㆍ저온공학회논문지
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• 제8권4호
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• pp.15-18
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• 2006

REBCO coated conductors (RE: rare earth elements) have recently drawn great attention since they are known to possess stronger flux pinning centers in high magnetic fields compared with YBCO coated conductors. In this study, $GdBa_2Cu_3O_{7-d}(GdBCO)$ was selected to investigate the influence of the distance between target and substrate and substrate temperature on the superconducting properties of GdBCO films on the $SrTiO_3(100)$ substrate. Samples were fabricated by pulsed laser deposition (PLD) with a Nd:YAG laser (355nm). Under a given oxygen pressure of 800mTorr, we changed the distance between target and substrate from 5.5cm to 7.0cm and the substrate temperature from $750^{\circ}C\;to\;850^{\circ}C$. The crystallinity and texture of GdBCO films were analyzed by X-ray diffraction (XRD), and the surface morphology was observed by the scanning electron microscopy (SEM). Tc and Jc values were measured by the four point probe method. High quality GdBCO films with Tc of 89.7K and Jc over $1MA/cm^2$ at 77 K in self field were successfully fabricated by optimizing processing parameters. The detailed processing conditions, microstructure and superconducting properties will be presented for a discussion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.1-4
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• 2015

(111)-oriented and random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/$TiO_x$/$SiO_2$/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (${\eta}=75%$, E = 560 kV/cm) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (${\Delta}T=45.3K$ and ${\Delta}S=46.9JK^{-1}kg^{-1}$ at $598kVcm^{-1}$) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.

• 대한치과기공학회지
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• 제26권1호
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• pp.97-104
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• 2004

A new Ti-10Ta-10Nb alloy has designed and examined some possibility of forming more passive oxide film by oxidation treatment which is closely related to corrosion resistance and biocompatibility. Ti-6Al-4V and Ti-10Ta-10Nb alloys were prepared by consumable vacuum arc melting and homogenized at 1050$^{\circ}C$ for 24hours. Alloy specimens were oxidized at the temperature range of 400 to 750$^{\circ}C$ for 30minutes, and the oxide films on Ti alloys were analysed by optical microscope, SEM, XPS and TGA. Cytotoxicity test was performed in MTT assay treated L929 fibroblast cell culture by indirect method. It is found out that the oxide film on Ti-10Ta-10Nb alloy is denser and thinner compared to Ti-6Al-4V alloy. The weight gain during the oxidation was increased rapidly at the temperature above 650$^{\circ}C$ for Ti-6Al-4V alloy and above 700$^{\circ}C$ for Ti-10Ta-10Nb alloy respectively. It was analysed that the passive film of the Ti alloys consisted of TiO2 through X-ray photoelectron spectroscopy (XPS) analysis. It is found out by cytotoxicity test that moderate oxidation treatment lowers cell toxicity, and Ti-10Ta-10Nb alloy showed better result compared to Ti-6Al-4V alloy.

• Korean Chemical Engineering Research
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• 제55권1호
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• pp.121-129
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• 2017

$TiO_2$, $Al_2O_3$, $ZrO_2$, $SiO_2$와 같은 다양한 담체에 습식함침법을 이용하여 Pd 기반 촉매를 제조하여 일산화탄소 존재하에 수소의 선택적 산화반응에 적용하였다. 제조된 촉매는 물리화학적 특성을 알아보기 위하여 XRD, $N_2$ 흡착, CO-, (CO+$H_2O$)-TPD, CO-TPR, XPS등의 특성분석을 수행하였다. CO-TPD와 (CO+$H_2O$)-TPD를 통해 $CO_2$ 탈착에 대한 $H_2O$의 영향을 알아보았으며 이러한 TPD 결과는 $H_2/CO$ 전환율과 상관관계가 있음을 확인하였다. 사용된 촉매 중에서 $Pd/ZrO_2$가 $H_2$ 전환율 측면에서 가장 활성이 좋은 것으로 나타났다. $H_2O$가 첨가된 선택적 $H_2$ 산화반응에서는 $H_2O$, CO, $H_2$가 경쟁흡착을 하였으며, 첨가된 $H_2O$가 CO 및 $H_2$의 반응을 촉진시켰다.