• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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• pp.428-430
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• 2008

Dye-sensitized solar cell has many internal resistant components such as Pt counter electrode, $TiO_2$/dye/electrolyte, charge diffusion, sheet resistance of TCO. Among these, the resistance about the counter electrode can be reduced by increasing the roughness factor of Pt counter electrode. This causes the increase of fill factor and improvement of efficiency. And the amount of light reflection on the counter electrode also increases as the roughness factor goes up. In our experiment, we suggest a new deposition structure of Pt thin film that is a stepped-type structure. The more step lines are in the counter electrode, the more roughness factor is. As a result, we get the improvement of fill factor and efficiency by controlling the roughness factor of counter electrode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.294-294
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• 2010

Over the last decade, dye-sensitized solar cell (DSSC) has attracted much attention due to the high solar-to-electricity conversion efficiency up to 10% as well as low cost compared with p-n junction photovoltaic devices. DSSC is composed of mesoporous TiO2 nanoparticle electrodes coated with photo-sensitized dye, the redox electrolyte and the metal counter electrode. The performances of DSSC are dependent on constituent materials and interface as well as device structure. Replacing the heavy glass substrate with plastic materials is crucial to enlarge DSSC applications for the competition with inorganic based thin film photovoltaic devices. One of the biggest problems with plastic substrates is their low-temperature tolerance, which makes sintering of the photoelectrode films impossible. Therefore, the most important step toward the low-temperature DSSC fabrication is how to enhance interparticle connection at the temperature lower than $150^{\circ}C$. In this talk, the key issues for high efficiency plastic solar cells will be discussed, and several strategies for the improvement of interconnection of nanoparticles and bendability will also be proposed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• 한국에너지공학회:학술대회논문집
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• 한국에너지공학회 1995년도 춘계학술발표회 초록집
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• pp.60-68
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• 1995

This work wes performed to investigate the photocatalytic decolorization of waste water from textile industries. Methyl orange was used as a target dye with suspended Hombikat TiO$_2$ photocatalyst with a recirculating annular photoreactor. 1 wt % Pt-doped Hombikat thin film tubular reactor with parabolic reflector also wes usedin this experiment. The pH effect and flow rate effect on photobleaching of 0.012 g/l methyl orange solution, AtpH=3 Colour of methyl orange was completely bleached in 30 min with a 20 W UV lamp.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Progress in Superconductivity
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• 제6권1호
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• pp.19-23
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• 2004

YBCO do superconducting quantum interference device (SQUID) magnetometers based on bicrystal Josephson junctions on 10 mm ${\times}$ 10 mm $SrTiO_3$ substrates have been fabricated. The pickup coil of the device was designed to have 16 parallel loops with 50-fm-wide lines. We could obtain optimised direct coupled YBCO SQUID magnetometer design with field sensitivity $B_{N}$ $\Phi$/ of $4.5 nT/\Phi_{0}$ and magnetic field noise $B_{N}$ of about $22 fT/Hz^{1}$2/ with an I/f corner frequency of 2 Hz measured inside a magnetically shielded room. Preliminary results of magnetocardiograph measurement using the HTS SQUID magnetometers show signal to noise ratio of about 110, which is comparable to the quality of a commercial MCG system based on Nb-SQUIDs.

• 대한금속재료학회지
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• 제49권11호
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• pp.845-852
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• 2011

The Spark Plasma Sintering(SPS) method offers a means of fabricating a sintered-body having high density without grain growth through short sintering time and a one-step process. A titanium compact having high density and purity was fabricated by the SPS process. It can be used to fabricate a Ti sputtering target with controlled parameters such as sintering temperature, heating rate, and pressure to establish the optimized processing conditions. The compact/target(?) has a diameter of ${\Phi}150{\times}6.35mm$. The density, purity, phase transformation, and microstructure of the Ti compact were analyzed by Archimedes, ICP, XRD and FE-SEM. A Ti thin-film fabricated on a $Si/SiO_2$ substrate by a sputtering device (SRN-100) was analyzed by XRD, TEM, and SIMS. Density and grain size were up to 99% and below $40{\mu}m$, respectively. The specific resistivity of the optimized Ti target was $8.63{\times}10^{-6}{\Omega}{\cdot}cm$.

• Nuclear Engineering and Technology
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• 제52권10호
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• pp.2353-2360
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• 2020

An anodic electrophoretic deposition (EPD) technique is used to create a uniform TiO₂ thin film coating on boiling thin steel plates (1.1 mm by 90 mm). All of the effective parameters except time of the EPD method are kept constant. To investigate the effect of gamma irradiation on the critical heat flux (CHF), the test specimens were irradiated in a gamma cell to different doses ranging from 100 to 300 kGy, and then SEM and BET analysis were performed. For each coated specimen, the contact angle and capillary length were measured. The specimens were then tested in a boiling pool for CHF and boiling heat transfer coefficient. It was observed that irradiation significantly decreases the maximum pore diameter while it increases the porosity, pore surface area and pore volume. These surface modifications due to gamma irradiation increased the CHF of the nano-coated surfaces compared to that of the unirradiated surfaces. The heat transfer coefficient (HTC) of the nano-coated surfaces irradiated at 300 kGy increased from 83 to 160 kW/(㎡ K) at 885 kW/㎡ wall heat flux by 100%. The CHF of the irradiated (300 kGy) and unirradiated surfaces are 2035 kW/㎡ and 1583 kW/㎡, respectively, an increase of nearly 31%.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.814-818
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• 2016

DSSCs (dye-sensitized solar cells) based on $TiO_2/SiO_2$ multi layer AR (anti-reflection) coating on the outer glass FTO (fluorine-doped tin oxide) substrate are investigated. We have coated an AR layer on the surface of a DSSCs device by using an IAD (ion beam-assisted deposition) system and investigated the effects of the AR layer by measuring photovoltaic performance. Compared to the pure FTO substrate, the multi layer AR coating increased the total transmittance from 67.4 to 72.9% at 530 nm of wavelength. The main enhancement of solar conversion efficiency is attributed to the reduction of light reflection at the FTO substrate surface. This leads to the increase of Jsc and the efficiency improvement of DSSCs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.393-396
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• 2004

본 논문에서는 완충층용 MgO 박막을 P-type(100)Si 기판위에 작업가스 $Ar:O_2=80:20$, RF 파워 50W, 기판온도 $400^{\circ}C$, 10mtorr의 작업진공에서 $500{\AA}$ 증착하였다. 제작된 MgO/Si 기판위에 RF Magnetron sputtering법으로 작업가스 $Ar:O_2$의 비율을 90:10, 80:20, 70:30으로 변화하면서 $BST(Ba_{0.5}Sr_{0.5}TiO_3)$ 박막을 약 $2000{\AA}$ 증착하였다. XRD 측정결과 작업가스비의 변화에 관계없이(110)BST와 (111)BST 피크만이 관찰되었으며 작업가스 $Ar:O_2=80:20$에서 가장 양호한 결정성을 나타내었다. I-V 측정결과 인가전계 ${\pm}100kV/cm$에서 $10^{-7}A/cm^2$이하의 양호한 누설전류 특성을 보여주고 있으며 C-V 측정결과 작업가스 $Ar:O_2$의 비율 90:10, 80:20, 70:30에서의 비유전율은 각각 283, 305, 296으로서 작업가스비 80:20에서 제작된 박막의 특성이 가장 우수하였다. 작업가스비 80:20에서 제작된 박막의 SEM 측정결과 결정이 성장되었음을 확인할 수 있었고 그레인의 크기는 약 10nm였다.