• Journal of the Korean Ceramic Society
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• v.30 no.9
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• pp.695-700
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• 1993

In this study, we prepared Pb-Ti stock solution by sol-gel processing and deposited PbTiO3 thin film on a Pt coated SiO2/Si wafer by spin coating using the stock solution. We used lead acetate trihydrate and titanium isopropoxide. The stock solution was partially hydrolized and finally a 0.25M coating solution was prepared. We achieved spin coating at 4000rpm for 30 seconds and heated the thin film at 375$^{\circ}C$ for 5 minutes and at $600^{\circ}C$ for 5 minutes successively, first and second heating state. And the thin film was finally sintered at 90$0^{\circ}C$ for 1 hour in the air. The upper electrode of the thin film was made by gold sputtering and was cricle shape with radius 0.4mm. Measured dielectric constant, dissipation factor and phase transition temperature(Cuire Temp.) were about 275, 0.02 and 521$^{\circ}C$ respectively. To observe ferroelectric characteristics we calculated Pr(remnant polarization) and Ec(coercive field) byhysteresis curve. Ec was 72kV/cm and Pr was 11.46$\mu$C/$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.784-787
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• 2002

We prepared the PLT(28) thin film by using sol-gel method and investigated the structure and electrical properties of the film. With the XRD and AFM analyses, it is found that PLT(28) thin film annealed at 6sot has a complete perovskite structure and its surface roughness is about 22$\AA$. We prepared PLT(28) thin film on the Pt/TiO$_{x}$SiO$_2$/Si substrate, in which the specimen has a planar capacitor structure, and analyzed the electrical properties of PLT(28) thin film. In result, PLT(28) thin film has a paraelectric phase and its dielectric constant and loss tangent at 10kHz are 761 and 0.024, respectively. Also, the storage charge density and leakage current density of PLT(28) thin film at W are 134fC/$\mu$m2 and 1.01 $\mu$A/cm2, respectively. As a result of this, we concluded that the PLT(28) thin film is a promising material to be used as a capacitor dielectrics for next generation DRAM.M.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.432-437
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• 1999

We have fabricated an in situ ellipsometer operating at He-Ne wavelength. It can be applied to the real-time, in-situ tracking of the ellisometric change which occurs during various sample treatments. As a rotating analyzer type, all optical elements and related parts are designed to share a common hollow-axis configuration, and hence the ellipsometer is compact in shape and simple in design. It is mountable on the spare ports of vacuum chamber with ease. Using this ellipsometer, we observed the effective density variation of previously grown $TiO_2$ thin films by using electron beam evaporation. The packing density of the as-grown film was 82%. When exposed to atomsphere, the micro-void of the film was filled with water vapor. This water-filled $TiO_2$ thin film was subject to heating/cooling cycles in vacuum and the ellipsometric variation versus temperature and cycling number was measured in real time using this in situ He-Ne ellipsometer.

• Transactions of the Korean hydrogen and new energy society
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• v.14 no.1
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• pp.8-16
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• 2003

$TiO_2$ thin films were deposited by DC reactive magnetron sputtering with variations in sputtering parameter such as Ar and $O_2$ flow rate, DC power, substrate temperature and magnetic field. Deposition rate, crystal structure, chemical bond of $TiO_2$ films on the deposition conditions were investigated by Alpha-step, X-ray Diffractometer(XRD), X-ray Photoelectron Spectroscopy(XPS). When the DC power was applied at 500watt, deposition rate of $TiO_2$ film was about 480A/min. $TiO_2$ films coated under the deposition condition of 15sccm Ar and 7~10sccm $O_2$ flow rate was only observed anatase phase. With increasing substrate temperature from RT to $300^{\circ}C$, crystal orientation of $TiO_2$ films variously became.

• Korean Chemical Engineering Research
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• v.45 no.4
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• pp.378-383
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• 2007

A novel fabrication method for the multi-component metal oxides such as zirconium titanate($Zr_xTi_{1-x}O_2$) has been suggested, which would yield the uniform film characteristics and control the film composition at relatively low process temperature. The method has the basic concept that firstly layer-by-layer structure is constructed with the primitive oxide layers, which are components of the desired multi-component oxides, and secondly the film is annealed at appropriate thermal conditions for the transformation to a single-phase multi-component oxides. In this study, PRTMOCVD(pulsed rapid thermal metalorganic chemical vapor deposition) possessing the superior thickness controllability was introduced to prepare $ZrO_2$ and $TiO_2$ thin film for zirconium titanate. Single-phase zirconium titanate thin films have been prepared successfully by the interdiffusion of oxide multilayers having several alternating layers of $ZrO_2$ and $TiO_2$. The Zr/Ti ratio of zirconium titanate could be controlled easily by altering the thickness of $ZrO_2$ and $TiO_2$ thin film.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.52 no.1
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• pp.14-19
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• 2003

The effect of the Pt electrode and the $Pt-IrO_2$ hybrid electrode on the performance of ferroelectric device was investigated. The modified Pt thin films with non-columnar structure significantly reduced the oxidation of TiN diffusion barrier layer, which rendered it possible to incorporate the simple stacked structure of Pt/TiN/poly-Si plug. When a $Pt-IrO_2$ hybrid electrode is applied, PZT thin film properties are influenced by the thickness and the partial coverage of the electrode layers. The optimized $Pt-IrO_2$ hybrid electrode significantly enhanced the fatigue properties of the PZT thin film with minimal leakage current.

• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.87-95
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• 2023

TiO₂ thin films were grown using the Atomic Layer Deposition (ALD) and their structural and electrical properties were investigated. The crystal structure, dielectric constant, and surface roughness of the TiO₂ thin films grown by the ALD deposition method were studied. The grown TiO₂ thin films showed an anatase crystal structure, and their properties varied with temperature. In particular, the properties of the TiO₂ thin films were confirmed by changing the process temperature. The electrical properties of Metal-Insulator-Silicon (MIS) capacitor structures were analyzed using a probe station. The performance improvement of capacitors using TiO₂ as a dielectric was confirmed by measuring capacitance through Capacitance-Voltage (C-V) curves.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.262-267
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• 2009

Superhydrophobic $TiO_2$ thin films were successfully fabricated on a glass substrate by wet process. Layer-by-layer (LBL) deposition and liquid phase deposition (LPD) methods were used to fabricate the thin films of micro-nano complex structure with a high roughness. To fabricate superhydrophobic $TiO_2$ thin films, the (PAH/PAA) thin films were assembled on a glass substrate by LBL method and then $TiO_2$ nanoparticles were deposited on the surface of (PAH/PAA) thin film by LPD method, Subsequently, hydrophobic treatment using fluoroalkyltrimethoxysilane (FAS) was carried out on the surface of prepared $TiO_2$ thin films. The $TiO_2$ thin film fabricated with 45 minutes immersion time on $(PAH/PAA)_{10}$ showed the RMS roughness of 65.6nm, water contact angel of $155^{\circ}$ and high transmittance of above 80% (>650nm in wavelength) after the hydrophobic treatment. The Surface morphologies, optical properties and contact angel of prepared thin films with different experimental conditions were measured by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), UV-Vis spectrophotometer and contact angle meter.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.189.1-189.1
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• 2013

Titanium dioxide (TiO2) is a wide bandgap semiconductor possessing photochemical stability and thus widely used for photocatalysis. However, enhancing photocatalytic efficiency is still a challenging issue. In general, the efficiency is affected by physio-chemical properties such as crystalline phase, crystallinity, exposed crystal facets, crystallite size, porosity, and surface/bulk defects. Here we propose an alternative approach to enhance the efficiency by studying interfaces between thin TiO2 layers to be stacked; that is, the interfacial phenomena influencing on the formation of porous structures, controlling crystallite sizes and crystallinity. To do so, multi-layered TiO2 thin films were fabricated by using a sol-gel method. Specifically, a single TiO2 thin layer with a thickness range of 20~40 nm was deposited on a silicon wafer and annealed at $600^{\circ}C$. The processing step was repeated up to 6 times. The resulting structures were characterized by conventional electron microscopes, and followed by carrying out photocatalytic performances. The multi-layered TiO2 thin films with enhancing photocatalytic efficiency can be readily applied for bio- and gas sensing devices.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.11
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• pp.2223-2228
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• 2009

Dye sensitized solar cells(DSCs) have been very economical and easy method to convert solar energy to electricity. DSC can reach low costs in future outdoor power applications. However, to commercialize the DSC, there are still many shortages to overcome such a low efficiency in a large size DSC. In this study, DSCs were fabricated by an electrospray coating method for the $TiO_2$ thin film. They were compared with DSCs prepared by conventional coating methods. We conducted an experiment to obtain the optimized parameters of voltage, flow rate, incident angle and distance in the electrospray method. After we fabricated $TiO_2$ film using that way, we investigated the characteristics of DSC through I-V Curve, SEM and EIS. This novel method shows stable performance with an energy conversion efficiency of 3.44 % under 1 sun illumination (AM 1, $P_{in}$ of $100\;mW/cm^2$).