• Korean Journal of Materials Research
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• v.18 no.6
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• pp.302-306
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• 2008

Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.427-431
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• 2020

In this research, we evaluated the electrical properties of polycrystalline-gallium-oxIde (Ga₂O₃) thin films grown by mist-CVD. A 500~800 nm-thick Ga₂O₃ film was used as a channel in a fabricated bottom-gate MOSFET device. The phase stability of the β-phase Ga₂O₃ layer was enhanced by an annealing treatment. A Ti/Al metal stack served as source and drain electrodes. Maximum drain current (I_D) exceeded 1 mA at a drain voltage (V_D) of 20 V. Electron mobility of the β-Ga₂O₃ channel was determined from maximum transconductance (g_m), as approximately, 1.39 ㎠/Vs. Reasonable device characteristics were demonstrated, from measurement of drain current-gate voltage, for mist-CVD-grown Ga₂O₃ thin films.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.72-78
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• 1998

Polarization mode converters have been produced by utilizing Ti:LiNbO$_{3}$ channel waveguide and strain-optic effect. Shear strain for periodic perturbations of optical channel waveguides and phase matching can be obtained by an evaporated periodic SiO$_{2}$ thin film at 300.deg. C. The electrodes located on the either side of waveguide provide a means to electro-optically tune the wavelength for maximum polarization conversion via the electrooptic effect. The maximum conversion effeciency was observed at 21.deg. C for V=0 and 46.deg. C for V=30V aro the device having 7 .mu.m waveguide wiith and 350 periodic pads. The dependence of the number of pads on conversion efficiency was observed experimentally.fficiency was observed experimentally.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.848-850
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• 1999

In this study, PZT etching was performed using planar inductively coupled Ar(20)/$Cl_2/BCl_3$ plasma, The etch rate of PZT film was 2450 $\AA/min$ at Ar(20)/$BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis for film composition was utilized. The chemical bond of PbO is broken by ion bombardment, and the peak of metal Pb in a Pb 4f peak begins to appear upon etching, decreasing Pb content faster than Zr and Ti. As increase content of additive $BCl_3$, the relative content of oxygen decreases rapidly. We thought that abundant Band BCl radicals made volatile oxy-compound such as $B_{x}O_{y}$ and/or $BClO_x$ bond. To understand etching mechanism, Langmuir probe and optical emission spectroscopy (OES) analysis were utilized for plasma diagnostic.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.1
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• pp.29-33
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• 2002

The SrS:Cu, Ag thin film electroluminescient devices were fabricated on $AlTiO_3$/ITO/glass substrates by electron-beam evaporation. The emission spectrum of the device was about 460 nm with $\chi$=0.20, y=0.29 in the CIE color coordinator. It was found that the emission spectrum was saturated to pure blue color when Ag sensitizer was doped in SrS:CuCl phosphors. The luminance of the device was increased by increasing the sulfur pressure. The measured luminance was saturated with 430 cd/$m^2$at the applied voltage of 90 V and the maximum luminance was 580 cd/$m^2$at 110V. The polarization charge and conduction charge of the devices were found to be found to be about $3.5\mu$C/$\textrm{cm}^2$ and $7.4\mu$C/$\textrm{cm}^2$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.692-701
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• 2012

Recently, many lead-free piezoelectric materials have been investigated for the replacement of existing Pb-based piezoelectric ceramics because of globally increasing environmental interest. There has been remarkable improvement in piezoelectric properties of some lead-free ceramics such as $(Bi,Na)TiO_3-(Bi,K)TiO_3-BaTiO_3$, $(Na,K)NbO_3-LiSbO_3$, and so on. However, no one still has comparable piezoelectric properties to lead-based materials. Therefore, new lead-free piezoelectric ceramics are required. $BiFeO_3$ has a rhombohedrally distorted perovskite structure at room temperature and a very high Curie temperature ($T_C$= 1,100 K). And a very large electric polarization of 50 ~ 60 ${\mu}C/cm^2$ has been reported both in epitaxial thin film and single crystal $BiFeO_3$. Therefore, a high piezoelectric effect is expected also in a $BiFeO_3$ ceramics. The recent research activities on $BiFeO_3$ or $BiFeO_3$-based solid solutions are reviewed in this article.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.7-15
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• 2004

The ferroelectric SBT thin films as a material of capacitors for non-volatile FRAMs have some problems that its remanent polarization value is relatively low and the crystallization temperature is quite high abovc 80$0^{\circ}C$. Therefore, in this paper, SBTN solution with S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$$O_{9}$ composition was synthesized by sol-gel method. Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. SBTN thin films with 200 nm thickness were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. UV-irradiation in a power of 200 W for 10 min and rapid thermal annealing in a 5-Torr-oxygen ambient at 76$0^{\circ}C$ for 60 sec were used to promote crystallization. The films were well crystallized and fine-grained after annealing at $650^{\circ}C$ in oxygen ambient. The electrical characteristics of 2Pr=11.94 $\mu$C/$\textrm{cm}^2$, Ps＋/Pr＋=0.54 at the applied voltage of 5 V were obtained for a 200-nm-thick SBTN films. This results show that 2Pr values of the UV irradiated and rapid thermal annealed SBTN thin films at the applied voltage of 5 V were about 57% higher than those of no additional processed SBTN thin films. thin films.lms.s.s.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.36-43
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• 2000

In oder to enhance the selectivity of TMA(trimethylamine) gas, the ZnO-based films which were doped with $Al_2O_3$, $TiO_2, $In_2O_3$ and $V_2O_5$ catalysts with various weight percents were deposited in oxygen by RF magnetron sputtering method. To improve electrical stability of sensors, the ZnO-based films were annealed in oxygen at $700^{\circ}C$ for 1 hour. The TMA selectivity of sensors was defined by the magnitude($S_{TMA}/S_{DMA}$ and $S_{TMA}/S_{NH3}$) of TMA sensitivity relative to DMA and sensitivity ammonia($NH_3$) sensitivity, respectively. The $ZnO+Al_2O_3(4\;wt.%)+TiO_2(1\;wt.%)+In_2O_3(1\;wt.%)$ sensor showed high $S_{TMA}/S_{DMA}$ of 5.9 and $S_{TMA}/S_{NH3}$ of 26 to 160 ppm at the working temperature of $300^{\circ}C$ respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.5
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• pp.801-804
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• 2006

[ $GdAlO_3(GAO)$ ] buffer layer for $YBa_2Cu_3O_{7-{\delta}}(YBCO)$ coated superconductor wire was fabricated by sol-gel processing. Precursor solution was prepared by dissolving 1:1 stoichiometric quantaties of gadolinium nitrate hexahydrate and aluminum nitrate nonahydrate in methanol. The solution was spin-coated on $SrTiO_3(STO)$(100) single crystal substrates and heated at $1000^{\circ}C$ for 2h in wet $N_2-5%\; H_2$, atmosphere. A SEM(scanning electron microscopy) observation of the surface morphology of the GAO layer has shown that it has a faceted morphology indicating epitaxy. It was shown from x-ray diffraction(XRB) that GAO buffer layer was highly c-axis oriented epitaxial thin film with both good out-of-plane($FWHM=0.29^{\circ}$ for the (002) reflection) and in-plane ($FWHM=1.10^{\circ}$ for the {112} reflection) alignment.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.121-122
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• 2012

Iron-excess gallium ferrite, $Ga_{0.6}Fe_{1.4}O_3$ (GFO), is known to have room-temperature ferromagnetic phases and potentially exhibit ferroelectricity as well [1]. But, leaky polarization-electric field (PE) hysteresis curves of the GFO thin film are hurdle to prove its spontaneous polarization, in other words, ferroelecticity. One of the reasons that the GFO films have leaky PE hysteresis loop is carrier hopping between $Fe^{2+}$ and $Fe^{3+}$ sites due to oxygen deficiency. We focus on reducing conducting current by substituting divalent cations at $Fe^{2+}$ sites. GFO thin films were grown epitaxially along b-axis normal to $SrRuO_3/SrTiO_3$ (111) substrates by pulsed laser deposition. Current density of the ion-substituted GFO thin films was reduced by $10^3$ or more. Ferroelectric properties of the ion-substituted GFO thin films were measured using macroscopic and microscopic schemes. In particular, local ferroelectric properties of the GFO thin films were exhibited and their remnant polarization and piezoelectric d33 coefficient were obtained.