• Bulletin of the Korean Chemical Society
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• 제7권4호
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• pp.257-262
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• 1986

Thixotropy is a time-dependent shear-thinning phenomenon. We derived a new thixotropic formula which is based on the generalized viscosity formula of Ree and Eyring, $f={\Sigma}\frac{X_i}{{\alpha}_i}sinh^{-1}$ () (Refer to the text concerning the notation.) The following is postulated: (1) thixotropy occurs when small flow units attached to a large flow unit separate from the latter under stress (2) elastic energy(${\omega}$) is stored on the large flow unit during the flow process, and (3) the stored energy contributes to decrease the activation energy for flow. A new thixotropic formula was derived by using these postulations, $f={\frac}{X_0{\beta}_0}{\alpha_0}{\dot{s}}+{\frac}{X_1{\beta}_1}{{\alpha}_1}{\dot{s}}+{\frac}{X_2}{{\alpha_x}}sinh^{-1}$[$({\beta}_0)_2$ exp $(-C_2{\dot{s}}^2/RT){\cdot}{\dot{s}}$] f is the shear stress, and s is the rate of shear. In case of concentrated solutions where the Newtonian flow units have little contribution to the viscosity of the system, the above equation becomes, $f=\frac{X_2}{\alpha_2}sinh^{-1}$[$({\beta}_0)_2$ exp $(-C_2{\dot{s}}^2/RT){\cdot}{\dot{s}}$]. In order to confirm these formulas, we applied to TiO2(anatase and rutile)-water, printing ink and mayonnaise systems. Good agreements between the experiment and theory were observed.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2004년도 추계학술발표대회 개요집
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• pp.109-111
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• 2004

20 vol.$\%$ SiC를 포함한 두 층간의 $Si_{3}N_{4}/SiC$ 나노 복합재료는$\alpha$ $-Si_3N_4$,13 nm 크기의 나노탄소 분말 그리고 $5\;wt$\%\;Y_2O_3$의 분말로 두 단계 소결을 통하여 제작된다. $Si_3N_4$ 입계 사이의 결합은 소결 후 변하지 않고 남은 compact와 $51\~62\%$의 기공으로 얻어진 표면적 사이의 반응에 의해 생성된다. 이 연구에서는 Ti 합금을 SiC 층에 브레이징을 이용하여 제작하고 기계적 특성을 연구하였다. 다양한 변형율과 결합물의 강도, 변형율 증가에 따른 층간 변화를 연구하였다. 층간 파괴 형태는 금속과 브레이징 합금 사이의 파괴, 세라믹과 브레이징 합금 사이의 파괴, 그리고 세라믹 내부에서의 파괴를 보였다.

• 전자공학회논문지D
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• 제35D권2호
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• pp.101-109
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• 1998

In this paper, we implemented holographic optical memory systm which can store and reconstruct many images using new input and angular multiplexing method. In the new input method, phase infomation of input image is inputed in the recording material instead of brightness information. To do so, we represented the images, which captured with CCD camera or displayed on the computer monitor, on the liquid crystal television(LCTV) which removed polarizer/analyzer. Therefore, we can generate uniform input beam intensity regardless of the total brightness of input image, and apply the scheduled recording method. Also we can increase the intensity of input beam so reduce the recording time of input image. And reconstructedimage is acquired by transforming phase information into brightness information of image with analyzer. The incident angle of reference beam is acquired by Fourier transform of the binary phase hologram(BPH) which designed with SA algorithm on the LCTV. The proposed optical memory system is stable because the incident angle of the reference beam is controlled easy and electronically. We demonstreated optical experiment which store and reconstruct various type images in BaTiO$_{3}$ using proposed holographic memory system.

• International Journal of Precision Engineering and Manufacturing-Green Technology
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• 제5권5호
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• pp.643-650
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• 2018

A self-powered electrochromic device was fabricated on an indium tin oxide-polyethylene naphthalate flexible substrate using a dye-sensitized solar cell (DSSC) as a self-harvesting source; the electrochromic device was naturally bleached and operated under outdoor light conditions. The color of the organic electrochromic polymer, poly(3,4-ethylenedioxythiophene) polystyrene sulfonate, was shifted from pale blue to deep blue with an antimony tin oxide film as a charge-balanced material. Electrochromic performance was enhanced by secondary doping using dimethyl sulfoxide. As a result, the device showed stable switching behavior with a high transmittance change difference of 40% at its specific wavelength of 630 nm for 6 hrs. To improve the efficiency of the solar cell, 1.0 wt.% of Ag NWs in the photoanode was applied to the $TiO_2$ photoanode. It resulted in an efficiency of 3.3%, leading to an operating voltage of 0.7 V under xenon lamp conditions. As a result, we built a standalone self-harvesting electrochromic system with the performance of transmittance switching of 29% at 630 nm, by connecting with two solar cells in a device. Thus, a self-harvesting and flexible device was fabricated to operate automatically under the irradiated/dark conditions.

• 한국재료학회지
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• 제15권6호
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• pp.413-418
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• 2005

Perovskite $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3[PNN-PZT]$ ceramics were synthesized by conventional ceramic processing technique. In order to modify piezoelectric properties for sensor application in this system, NiO addition was considered to provide $Ni^{+2}$ as an acceptor, which was known to occupy with B site in the structure. The effect of NiO addition up to $8\;mol\%$ on the following piezoelectric properties as well as sintering properties was investigated. When NiO added more than $1\;mol\%$, average grain size was decreased and second phase was found to form. Moreover, the second phase caused decrease in relative dielectric constant $(\varepsilon_{33}T/\varepsilon0)$, electro-mechanical coupling factor $(k_p)$, and piezoelectric charge constant $(d_{33})$, while increasing mechanical quality factor $(Q_m)$. When $1\;mol\%$ NiO was added, density, dielectric properties and piezoelectric properties were abruptly increased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1553-1555
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• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.

• 전기화학회지
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• 제11권2호
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• pp.100-104
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• 2008

Titanium sheet metal substrates used in thin film batteries were wet etched and their surface area was increased in order to increase the discharge capacity and power density of the batteries. To obtain a homogeneous etching pattern, we used a conventional photolithographic process. Homogeneous hemisphere-shaped wells with a diameter of approximately $40\;{\mu}m$ were formed on the surface of the Ti substrate using a photo-etching process with a $20\;{\mu}m{\times}20\;{\mu}m$ square patterned photo mask. All-solid-state thin film cells composed of a Li/Lithium phosphorous oxynitride (Lipon)/$LiCoO_2$ system were fabricated onto the wet etched substrate using a physical vapor deposition method and their performances were compared with those of the cells on a bare substrate. It was found that the discharge capacity of the cells fabricated on wet etched Ti substrate increased by ca. 25% compared to that of the cell fabricated on bare one. High discharge rate was also able to be obtained through the reduction in the internal resistance. However, the cells fabricated on the wet etched substrate exhibited a higher degradation rate with charge-discharge cycling due to the nonuniform step coverage of the thin films, while the cells on the bare substrate demonstrated a good cycling performance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.62-62
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• 2008

As micro-system move toward higher speed and miniaturization, requirements for embedding the passive components into printed circuit boards (PCBs) grow consistently. They should be fabricated in smaller size with maintaining and even improving the overall performance. Miniaturization potential steps from the replacement of surface-mount components and the subsequent reduction of the required wiring-board real estate. Among the embedded passive components, capacitors are most widely studied because they are the major components in terms of size and number. Embedding of passive components such as capacitors into polymer-based PCB is becoming an important strategy for electronics miniaturization, device reliability, and manufacturing cost reduction Now days, the dielectric films deposited directly on the polymer substrate are also studied widely. The processing temperature below $200^{\circ}C$ is required for polymer substrates. For a low temperature deposition, bismuth-based pyrochlore materials are known as promising candidate for capacitor $B_2Mg_{2/3}Nb_{4/3}O_7$ ($B_2MN$) multi layers were deposited on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system at room temperature. The physical and structural properties of them are investigated by SEM, AFM, TEM, XPS. The dielectric properties of MIM structured capacitors were evaluated by impedance analyzer (Agilent HP4194A). The leakage current characteristics of MIM structured capacitor were measured by semiconductor parameter analysis (Agilent HP4145B). 200 nm-thick $B_2MN$ muti layer were deposited at room temperature had capacitance density about $1{\mu}F/cm^2$ at 100kHz, dissipation factor of < 1% and dielectric constant of > 100 at 100kHz.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.176.2-176.2
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• 2014

In this work, we demonstrated that the fabrication of flexible graphene-based chemical sensor with heaters by soft lithographic patterning method [1]. First, monolayer and multilayer graphene were prepared by thermal chemical vapor deposition transferred onto SiO2 / Si substrate in order to fabrication of patterned-sensor and -heater. Second, patterned-monolayer and multilayer graphene were detached through soft lithography process, which was transferred on top and bottom sides of PET film. Third, Au / Ti (Thickness : 100/30 nm) electrodes were deposited end of the patterned-graphene line by sputtering system. Finally, we measured sensor properties through injection of NO2 and CO2 gas on different temperature with voltage change of graphene heater.

• 대한환경공학회지
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• 제38권6호
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• pp.291-298
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• 2016

불용성 전극은 전기화학 공정에 있어 가장 핵심적인 소재이며, 이를 이용한 전기화학적 수처리 공정은 난분해성 물질을 제거하는 유용한 방법으로서 이에 대한 연구가 지속적으로 이루어져 오고 있다. 전기화학적 수처리 공정은 주로 산화전극에서의 산화반응과 환원전극에서의 환원반응을 이용하는 것이다. 본 연구에서는 불용성 전극의 제조공정에서 전처리 방법이 전극의 수명에 미치는 영향을 평가하였다. 실험결과 촉매전극층을 코팅하는 물질계 및 코팅방법을 동일하게 하는 경우에도 기판의 전처리 방법 즉, 기판표면의 조도, 세정방법, 중간층 형성 여부 및 방법 등에 따라 전극의 수명이 크게 달라지는 것을 확인하였다. 실험은 가장 많이 사용되는 전극의 하나인 $IrO_2/Ti$ 전극을 대상으로 하였다. 샌드 블라스팅 공정의 경우 입도를 달리하는 샌딩 미디어를 이용하여 전극을 제조하고 이에 대한 수명을 평가한 결과 #80알루미나(입도 $212{\sim}180{\mu}m$)를 이용하는 경우가 가장 효과적인 것으로 나타났다. 기판에 대한 세정 공정은 arc plasma를 이용하는 것이 가장 우수하였으며, 중간층을 형성함에 있어서는 스퍼터링법을 이용하여 Ta 계열의 중간층을 형성하는 방법을 적용하는 것이 가장 바람직한 것으로 확인되었다.