• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.795-803
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• 1994

Ferroelectric BaTiO3 thin film was produced using BaTi-ethoxide sol. This sol was prepared from BaTi-ethoxide by a partial hydrolysis with ammonia as a basic catalyst and ethylene glycol as a chelating agent. BaTiO3 thin film was prepared from three continuous spin-coating layers of the sol on bare Si(100) wafer at 2500 rpm followed by pyrolysis at $700^{\circ}C$ for 30 min. After the heat treatment, the film was 0.200$\pm$0.010 ${\mu}{\textrm}{m}$ thick and its grain size was 0.059 ${\mu}{\textrm}{m}$. On the other hand, electrical properties were measured for BaTiO3 thin film separately prepared on Au-deposited silicon wafer. The dielectric constant and loss of the BaTiO3 thin film at room temperature was 150~160 and 0.04 respectively, which was measured at 10 kHz and oscillation level of 0.1 V. In the measurements of the dielectric properties at high temperatures, it was observed that the capacitance of the thin film increases steeply, while the dielectric loss reaches maximum around 1$25^{\circ}C$, which corresponds a phase transition from tetragonal to cubic BaTiO3.

• Proceedings of the KIEE Conference
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• 2007.11c
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• pp.138-140
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• 2007

$TiO_2-V_2O_5$ sol was fabricated using sol-gel method and $TiO_2-V_2O_5$ thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mo1e, 0.03mo1e, 0.05mo1e into $TiO_2$ sol. Viscosity of sol increased fast from about 1,000 minutes and sol began gelation from about 10,000 minutes. As a results of crystalline properties, $V_2O_5$ peaks were not found despite of $V_2O_5$ addition. Endothermic reaction occurred due to evaporation of solvent and dissociation of OH at $80^{\circ}C$. Exothermic reaction occurred due to combustion and oxidation of solvent at $230^{\circ}C$, occurred to combustion and oxidation of alkyl group at $350^{\circ}C$. Thickness of thin films increased $0.1{\sim}0.25{\mu}m$ every a dipping.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.11
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• pp.2223-2228
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• 2009

Dye sensitized solar cells(DSCs) have been very economical and easy method to convert solar energy to electricity. DSC can reach low costs in future outdoor power applications. However, to commercialize the DSC, there are still many shortages to overcome such a low efficiency in a large size DSC. In this study, DSCs were fabricated by an electrospray coating method for the $TiO_2$ thin film. They were compared with DSCs prepared by conventional coating methods. We conducted an experiment to obtain the optimized parameters of voltage, flow rate, incident angle and distance in the electrospray method. After we fabricated $TiO_2$ film using that way, we investigated the characteristics of DSC through I-V Curve, SEM and EIS. This novel method shows stable performance with an energy conversion efficiency of 3.44 % under 1 sun illumination (AM 1, $P_{in}$ of $100\;mW/cm^2$).

• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.360-364
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• 2010

$Li_4Ti_5O_{12}$ thin film with inverse hemispheric structure was fabricated on a Pt/Ti/$SiO_2$/Si substrate by the sol-gel and dip coating method for use as an anode for 3-dimensional (3D) thin-film batteries. Polystyrene (PS) beads of 400 nm diameter were used to prepare the template for the inverse hemispheric structure. A coating solution prepared using precursor sources was dropped on the template-deposited substrates, which were then calcinated at $400^{\circ}C$. The template was removed by calcination, and the inverse hemispheric structure was successfully formed by an annealing process. The cyclic performance during high-rate charge/discharge processes of the $Li_4Ti_5O_{12}$ film with inverse hemispheric structure was superior to that of the flat $Li_4Ti_5O_{12}$ film.

• Journal of the Korea Institute of Military Science and Technology
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• v.17 no.5
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• pp.672-679
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• 2014

To improve sensing capability of infrared, heat-resistance and mechanical properties, the $SiO_2$ and $TiO_2$ anti-reflective layers were coated on sapphire substrate by MOCVD. The standard wavelength was 4,600nm, and the thickness of anti-reflective layers were 379 and 758nm in case of ${\lambda}/4$ and ${\lambda}/2$ of incident angle($65^{\circ}$), respectively. The $SiO_2$ and $TiO_2$ anti-reflective layers were coated 12.6 and 9.7nm/min of deposition rates by increasing oxygen pressure to set the ideal refractive index of 1.283. In case of $SiO_2({\lambda}/2)$ coating, the transmittance increased from 55.0 to 62.7%. The transmittance of $TiO_2({\lambda}/2)$ anti-reflective layer also increased from 55.0 to 64.8%. The flexural strength of $SiO_2({\lambda}/2)$ and $TiO_2({\lambda}/2)$ layer coated sapphire increased from 337.8 to 362.9 and 371.8MPa, respectively. The flexural strength at $500^{\circ}C$ of these materials also increased respectively to 304.5, 358.2MPa from 265.9MPa. From these results, we confirmed these materials can be used as transmission window of infrared light.

• Journal of the Korean institute of surface engineering
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• v.35 no.3
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• pp.133-140
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• 2002

The Ti-Si-N coating layers were synthesized on SKD 11 steel substrate by a DC reactive magnetron co-sputtering technique with separate Ti and Si targets. The high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) analyses for the coating layers revealed that microstructure of Ti-Si-N layer was nanocomposite, consisting of nano-sized TiN crystallites surrounded by amorphous $Si_3$$N_4$ phase. The highest hardness value of about 39 GPa was obtained at the Si content of ~11at.%, where the microstructure had fine TiN crystallites (about 5nm in size) dispersed uniformly in amorphous matrix. As the Si content in Ti-Si-N films increased, the TiN crystallites became from aligned to randomly oriented microstructure, finer, and fully penetrated by amorphous phase. Free Si appeared in the layers due to the deficit of nitrogen source at higher Si content. Friction coefficient and wear rate of the Ti-Si-N coating layer significantly decreased with increase of relative humidity. The self-lubricating tribe-layers such as $SiO_2$ or (OH)$Si_2$ seemed to play an important role in the wear behavior of Ti-Si-N film against steel.

• Proceedings of the KIEE Conference
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• 2008.05a
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• pp.161-163
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• 2008

$TiO_2-V_2O_5$ sol was fabricated using sol-gel method and $TiO_2-V_2O_5$, thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mole, 0.03mole, 0.05mole into $TiO_2$ sol. Capacitance of thin films decreased with increasing $V_2O_5$ additive and it increased largest at 0.01mole. Because adsorption time and desorption time of thin films was about 2 minutes 40 seconds and about 3 minutes 40 seconds respectively, adsorption time was faster about 1 minutes than desorption time.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.38.2-38
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• 2003

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.122-125
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• 1995

Using metalorganic deposition technique, $La_2Ti_2O_{7}$ precursor solution was deposited on platinium coated SiO$_2$/SI(100) substrates by spin-coating process. Crystalline and crack-free films of ∼0.2$\mu\textrm{m}$ thickness were successfully fabricated on the above substrate from four different types of $La_2Ti_2O_{7}$ precursor solutions by proper heat treatment in the temperature range of $700^{\circ}C$∼$1200^{\circ}C$. Microstructure and X-ray diffraction analysis of $La_2Ti_2O_{7}$ thin film showed that the crystallization temperature and the preferred orientation of $La_2Ti_2O_{7}$ thin film were strongly dependent on the precursor used.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1258_1259
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• 2009

염료감응형 태양전지 (dye-sensitized solar cell; DSC)는 경제성 한계에 달한 Si 태양전지를 대체할 수 있는 유력한 후보로서, 지금까지 많은 연구개발로 큰 효율향상을 기록했다. 다양한 연구 분야 중에서도, 투명전도성 막과 전해질 층간의 접촉으로 발생하는 전자의 재결합을 막기 위해 삽입하는 compact layer는 ZnO dip-coating, $TiCl_4$ dip-coating, Ti sputtering 등 다양한 제조방법이 제시되었다. 본 연구에서는 $TiCl_4$ 용액을 이용해 spin-coating 방법으로 $TiO_2$ compact layer를 제조하는 시도를 했다. 기존 dip-coating 방법과의 비교를 통해서 본 연구의 spin-coating 방법에 의한 효과를 확인한 결과, standard DSC 대비 33.4%, dip-coating 방법으로 compact layer를 삽입한 DSC 대비 6%의 효율 향상을 기록했다.