• Journal of the Korean Vacuum Society
• /
• v.1 no.1
• /
• pp.67-72
• /
• 1992

The growth of Ti on Si(111)-$7{\times}7$ and the formation of epitaxial C54 $TiSi_2$ were investigated by using reflection high energy electron diffraction(RHEED) and high resolution transmission electron microscopy(HRTEM). Polycrystalline Ti layer is grown on the amorphous Ti-Si interlayer which is formed at the Ti/Si interface by Ti deposition on Si(111)-$7{\times}7$ at room temperature (RT). HRTEM lattice image and transmission electron diffraction(TED) showed that epitaxial C54 $TiSi_2$ grown on Si substrate with 160 ML of Ti on Si(111)-$7{\times}7$ surface at RT, followed by annealing at $750^{\circ}C$ for 10 min in UHV. Thin single crystal Si overlayer with [111] direction is grown on $TiSi_2$ surface when $TiSi_2$/Si(111) is annealed at ${\sim}900^{\circ}C$ in UHV, which was confirmed by Si(111)-$7{\times}7$ superstructure.

• Journal of Korea Foundry Society
• /
• v.41 no.2
• /
• pp.127-131
• /
• 2021

Based on its good compatibility with high-temperature environments, the Ti-48Al-2Cr-2Nb alloy is used for high-temperature materials of industrial equipment. In this study, a Ti-48Al-2Cr-2Nb alloy turbocharger turbine wheel was fabricated by a vacuum centrifugal casting method. The conditions that prevent misrun defects of the turbocharger turbine wheel blade from centrifugal casting using alumina molds were investigated. The microstructure of the alloy prepared by vacuum centrifugal casting was studied by means of optical microscopy (OM), with a micro-Vickers hardness analyzer (HV), by X-ray diffraction (XRD) and by SEM-EDS. The HV and SEM-EDS examinations of the as-cast Ti-48Al-2Cr-2Nb alloy showed that the thickness of the oxide layer (α-case) was typically less than 50 ㎛. At a high preheating temperature of 1,100℃, a moderate RPM of 260, and with an alumina mold with a large gate size, there were almost no misrun defects. Therefore, it was confirmed that a Ti-48Al-2Cr-2Nb alloy turbocharger turbine wheel with fewer misrun defects could be achieved through a high preheating temperature, a moderate RPM, a large gate size and an alumina mold to suppress the formation of alpha-case components.

• Journal of Power System Engineering
• /
• v.7 no.4
• /
• pp.55-60
• /
• 2003

This paper is to investigate the fatigue crack growth of plasma-sprayed coating steels according to heat treatments. The experimental materials are carbon steels(substrate: S45C) with plasma-sprayed coating layers of Ni-4.5%Al and $TiO_2$. The fatigue test is conducted on compact tension specimen by a servo-hydraulic fatigue testing machine. The specimens are heat-treated at $400^{\circ}C\;and\;800^{\circ}C$, respectively. Loading condition is a constant amplitude sinusoidal wave with a frequency of 10Hz and a load ratio of 0.1. The fatigue crack growth length is automatically measured by a compliance method. In the case of non-heat treated specimens, the fatigue crack growth rates of both substrate and coating specimen are almost same. The crack growth rates of substrates and coating steels by heat treatment are larger than those of the non-heat treated one, because the ductile property increase by heat treatment. In ${\Delta}K<18MPa{\cdot}m^{1/2}$, the crack growth rates of the heat-treated specimens are slightly taster than non-heat treated one. But the both heated and non-heated one are almost same in ${\Delta}K>18MPa{\cdot}m^{1/2}$.

• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.3
• /
• pp.31-36
• /
• 2018

This research scrutinizes the reason of failure after pressure cooker test (PCT) for DRAM device. We use the physical inspecting tools, such as microscope, SEM and TEM, and finally find the discolor phenomenon, corrosion of Al and delamination of inter-metal dielectric (IMD) in the failed devices after PCT. Furthermore, we discover the abnormal $Al_XO_Y$ layer on Al through the careful additional measurements. To find the reason, we evaluate the effect of package ball size and pinhole in passivation layer. Unfortunately, those aren't related to the problems. We also estimate halide effect of Al. The halogens such like Cl are contained within EMC material. Those result in the slight improving of PCT characteristics but do not perfectly solve the problems. We make a hypothesis of Galvanic corrosion. We can find the residue of Ti at the edge of pad open area. We can see the improving the PCT characteristics by the time split of repair etch. The possible mechanism of the PCT failure can be deduced as such following sequence of reactions. The remained Ti reacts on the pad Al by Galvanic corrosion. The ionized Al is easily react with the $H_2O$ supplied under PCT environment, and finally transfers to the abnormal $Al_XO_Y$ layer.

• Economic and Environmental Geology
• /
• v.28 no.4
• /
• pp.351-367
• /
• 1995

The elemental geochemistry and oxygen isotopes of illite/smectite (I/S) have been studied in relationship to the mineralogical trend in the Reindeer D-27 well, Beaufort-Mackenzie Basin. The increase in concentrations of $K_2O$, Rb and rare earth elements (REE), the decrease in concentrations of tetrahedral elements such as Mg, Ti, Sc, Zn and Zr, and the increase in concentrations of tetrahedral elements such as Be and V can be related to I/S compositions that vary systematically with depth. Layer formulae of S- and I-layers are estimated as $[Al_{1.57}Fe_{.19}Mg_{.31}Ti_{.07}][Si_{3.84}Al_{.16}]O_{10}(OH)_2$ and $[Al_{1.84}Mg_{.16}][Si_{3.33}Al_{.67}]O_{10}(OH)_2$, respectively. The mobilization of REE appears to occur during illitization. The increase in concentrations of REE, especially La and Ce, with depth is probably linked to incorporation of ions with high valency (e.g. $V^{5+}$) in tetrahedral sites. The excess valency due to V is partly counter-balanced by ions with low valency (e.g. $Be^{2+}$) and, in turn, the local valency deficiency caused by $Be^{2+}$ could be compensated by high-charge interlayer cations such as REE (＋3). ${\delta}^{18}O$ values of I/S range from 2.91 to 15.72‰ (SMOW), and increase with depth, contrasting to trends observed in the Gulf Coast and elsewhere. The increase in ${\delta}^{18}O$ of I/S results from the rapid increase in ${\delta}^{18}O$ of pore water that overcomes the decrease in temperature-dependent fractionation values with increasing burial depth (${\delta}^{18}O_{pore\;water}>-d{\Delta}/_{I/S-water};\;d{\delta}^{18}O_{I/S}>0$). Calculated ${\delta}^{18}O$ values of pore water in equilibrium with I/S suggest that the original water was probably meteoric water. The stratification of pore water is postulated from the presence of an isotopically light interval, about 450m thick. The depth range of the isotopically light zone overlaps, but does not coincide with the interval of lowered I-content and $K_2O$ concentrations, suggesting that oxygens may have been exchanged independently of mineralogical and geochemical reactions.

• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.4
• /
• pp.49-53
• /
• 2011

High-speed Cu filling into a through-silicon-via (TSV) and simplification of bumping process by electroplating for three dimensional stacking of Si dice were investigated. The TSV was prepared on a Si wafer by deep reactive ion etching, and $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to increase the filling rate of Cu into the via, a periodic-pulse-reverse wave current was applied to the Si chip during electroplating. In the bumping process, Sn-3.5Ag bumping was performed on the Cu plugs without lithography process. After electroplating, the cross sections of the vias and appearance of the bumps were observed by using a field emission scanning electron microscope. As a result, voids in the Cu-plugs were produced by via blocking around via opening and at the middle of the via when the vias were plated for 60 min at -9.66 $mA/cm^2$ and -7.71 $mA/cm^2$, respectively. The Cu plug with a void or a defect led to the production of imperfect Sn-Ag bump which was formed on the Cu-plug.

• Korean Journal of Materials Research
• /
• v.8 no.7
• /
• pp.621-627
• /
• 1998

The formation of Co-silicide between Co/Zr bilayer on the amorphous and crystalline Si substrates has been investigated. The films of Zr(50$\AA$) and Co(l50$\AA$) were deposited with e-beam evaporation system and were heattreated with the rapid thermal annealing system at the temperatures between 50$0^{\circ}C$ and 80$0^{\circ}C$ with 10$0^{\circ}C$ increments for 30 seconds. The phase identification of Co-silicide was carried out by XRD and the chemical analysis was examined by AES and RBS. The interface morphologies of Co/Zr bilayer films were investigated by cross sectional TEM and HRTEM. $CoSi_2$ was formed epitaxially on the crystalline Si substrate above $700^{\circ}C$ while polycrystalline $CoSi_2$ was grown on the amorphous Si substrate. The formation temperature of Co-silicide on the amorphous Si substrate was about 100 C lower than that on the crystalline Si. The COzSi phase was not identified on the both Si substrates. The formation temperature of first phase of Co-silicide on ColZr bilayer was higher than that on Co mono layer. CoSizlayer formed on the amorphous Si substrate exhibits better uniformity compared to the CoSiz formed on the crystalline substrate. The sheet resistance of CoSiz layer on crystalline Si was lower than that on the amorphous Si at high temperatures.tures.