• Title/Summary/Keyword: $TiO_2$/$SiO_2$

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Properties of SiC-Ti $B_2$ Electroconductive Ceramic Composites by Pressureless Annealing (무가압 Annealing한 $SiC-TiB_2$전도성 세라믹 복합체의 특성)

  • 신용덕;주진영;최광수;오상수;윤양웅
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.2
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    • pp.80-84
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    • 2003
  • The mechanical and electrical properties of the hot-pressed and pressureless annealed SiC-Ti $B_2$electroconductive ceramic composites were investigated as functions of the liquid additives of $Al_2$ $O_3$+ $Y_2$ $O_3$. The result of phase analysis for the SiC-Ti $B_2$ composites by XRD revealed $\alpha$-SiC(6H), Ti $B_2$, and YAG(A $l_{5}$ $Y_3$ $O_{12}$ ) crystal phase. The relative density of SiC-Ti $B_2$ composites was increased with increased $Al_2$ $O_3$+ $Y_2$ $O_3$ contents. The fracture toughness showed the highest value of 6.04 Mpa $m^{\frac{1}{2}}$ for composites added with l2wt% A1$_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity showed the lowest value of 6.2$\times$10$^{-3}$ $\Omega$ㆍcm for composite added with l6wt% $Al_2$ $O_3$+ $Y_2$ $O_3$ additives at room temperature. The electrical resistivity of the SiC-Ti $B_2$ composites was all positive temperature cofficient resistance(PTCR) in the temperature ranges from $25^{\circ}C$ to $700^{\circ}C$.

Preparation and Property. of $TiO_2-SiO_$ Optical Thin Films with the Mixture Ratio (혼합비에 따른 $TiO_2-SiO_$ 광학 박막의 제작 및 특성)

  • 이학준;안영욱;윤영진;김의정;한성홍
    • Proceedings of the Optical Society of Korea Conference
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    • 2002.07a
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    • pp.196-197
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    • 2002
  • 졸-겔법은 비정질이나 결정질의 산화물 박막을 제작하는 유용한 방법중 하나이다.(1) 또한 졸-겔법은 제작하고자 하는 특성의 시편을 비교적 쉽게 구현할 수 있다는 장점이 있다. TiO$_2$와 SiO$_2$ 박막은 비교적 큰 굴절률 차이를 갖고 있어 혼합비에 따라 넓고 완만한 굴절률 분포를 가진다.(2) 이것은 박막이 원하는 광학적 특성을 가지게 하여 광학이나 촉매 분야에 응용할 수 있는 가능성이 크다는 것을 의미한다. (중략)

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Preparation of Glass-Ceramics in $Li_2O-Al_2O_3-TiO_2-SiO_2$ System by Sol-Gel Technique : (I) Preparation of Porous Monolithic Gel in $Li_2O-Al_2O_3-TiO_2-SiO_2$ System by Sol-Gel Method (Sol-Gel법에 의한 $Li_2O-Al_2O_3-TiO_2-SiO_2$계 다공성 결정화 유리의 제조 : (I) Sol-Gel 방법에 의한 $Li_2O-Al_2O_3-TiO_2-SiO_2$계 다공성 겔체의 제조)

  • 조훈성;양중식;권창오;이현호
    • Journal of the Korean Ceramic Society
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    • v.30 no.7
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    • pp.535-542
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    • 1993
  • It was investigated in this study that a preparation method, activation energy, surface area, pore volume, pore size distribution and DTA analysis of the dry gel in process of producing monolithic porous gel in Li2O-Al2O3-TiO2-SiO2 system by the sol-gel technique using metal alkoxides. Activation energy for gellation according to the variation of water concentration and the kind of catalysts ranged from 10 to 20kcal/mole. Monolithic dry gels were prepared after drying at 9$0^{\circ}C$ when the amount of water for gellation was 4~8 times more than the stoichiometric amount, that was necessary for the full hydrolysis of the mixed metal alkoxide. The specific surface area, the pore volume, the average pore radius of the dried gel at 18$0^{\circ}C$ according to the various kinds of catalyst were about 348~734$m^2$/g, 0.35~0.70ml/g and 10~35$\AA$, respectively. It showed that the dry gels were porous body. As a result ofthe analysis of DTA, it was confirmed that the exothermaic peaks at 715$^{\circ}C$ and 77$0^{\circ}C$ was clue to the crystallization of dried gel.

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The Influence of Support on Gas Mask Cobalt Catalysts for Low Temperature CO Oxidation (방독마스크용 코발트 촉매의 저온 일산화탄소 산화반응에서 지지체의 영향)

  • Kim, Deog-Ki;Kim, Bok-Ie;Shin, Chae-Ho;Shin, Chang-Sub
    • Journal of the Korean Society of Safety
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    • v.21 no.2 s.74
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    • pp.35-45
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    • 2006
  • Cobalt catalysts for gas mask loaded on various supports such as $Al_{2}O_{3},\;TiO_{2}$, AC(activated carbon) and $SiO_{2}$ were used to examine influences of calcination temperatures and reaction temperatures for CO oxidation. $Co(NO_{3})_2{\cdot}6H_{2}O$ was used as cobalt precursor and the catalysts were prepared by incipient wetness impregnation. The catalysts were characterized using XRD, TGA/DTA, TEM, $N_{2}$ sorption, and XPS. For the catalytic activity, support was in the order of ${\gamma}-Al_{2}O_{3}>TiO_{2}>SiO_{2}>AC\;and\;Al_{2}O_{3}$. The catalytic activity at lower temperature than $80^{\circ}C$ showed that with the increase of reaction temperature, cobalt catalysts on ${\gamma}-Al_{2}O_{3},\;TiO_{2},\;AC\$ has the negative activation energy but that of $SiO_{2}$ was positive.

Crystallization of $K_2O-SiO_2-TiO_2$ Glasses ($K_2O-SiO_2-TiO_2$ 계 유리의 결정화)

  • 김성식;박현수
    • Journal of the Korean Ceramic Society
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    • v.22 no.2
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    • pp.44-50
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    • 1985
  • The crystallization behavior of $K_2O-SiO_2$ glasses with added $TiO_2$ and the effect of $TiO_2$ on internal nuleation at temperature in the range of 875 to 121$0^{\circ}C$ have been investigated by means of X-ray diffractometry optical microscopy and scanning electron microscopy. The crystalline phase of these glasses identified by X-ray diffractometry is cristbalite. The scanning electron microspcopy reveals a two-phase layer of dendritic crystals and intersitial melt which grow from the surface at a constant rate, The observed crystallization rates are consistent with a diffusion-controlled mechanism. An equation relating viscosity and undercooling to growth rate is presented.

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α-case Interfacial Reaction Behavior of Al2O3 Mold Containing Interstitial and Substitutional Compounds for Titanium Investment Casting (침입형 및 치환형 화합물을 함유한 Ti 정밀주조용 Al2O3 주형의 α-case 계면반응 거동)

  • Choi, Bong-Jae;Lee, Seul;Kim, Young-Jig
    • Korean Journal of Metals and Materials
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    • v.49 no.7
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    • pp.577-582
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    • 2011
  • The newly developed ${\alpha}-case$ controlled mold material for Ti investment castings was suggested in this research. The $Al_2O_3$ mold containing interstitial $TiO_2$ and substitutional $Ti_3Al$ was manufactured by the reaction between $Al_2O_3$ and Ti. It is obvious that as the $TiO_2$ and $Ti_3Al$ content in the mold surface were increased, the depth of the interfacial reaction was significantly reduced. In addition, substitutional $Ti_5Si_3$ in the mold surface owing to the reaction between Ti and $SiO_2$ from the binder was effective for ${\alpha}-case$ reduction. Therefore, the ${\alpha}-case$ reduction was accomplished by the diffusion barrier effect of interstitial $TiO_2$, substitutional $Ti_3Al$ and $Ti_5Si_3$.

A Study on the Transmittance, Heat-Resistance, and Mechanical Properties of SiO2, TiO2 Anti-Reflective Single Layers Deposited on Sapphire Substrate by MOCVD (금속유기화학증착법으로 사파이어 기판에 증착된 단층 SiO2, TiO2 저반사막의 광 투과율, 내열성, 기계적 특성에 관한 연구)

  • Shim, Gyu-In;Eom, Hyengwoo;Kang, Hyung;Choi, Se-Young
    • Journal of the Korea Institute of Military Science and Technology
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    • v.17 no.5
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    • pp.672-679
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    • 2014
  • To improve sensing capability of infrared, heat-resistance and mechanical properties, the $SiO_2$ and $TiO_2$ anti-reflective layers were coated on sapphire substrate by MOCVD. The standard wavelength was 4,600nm, and the thickness of anti-reflective layers were 379 and 758nm in case of ${\lambda}/4$ and ${\lambda}/2$ of incident angle($65^{\circ}$), respectively. The $SiO_2$ and $TiO_2$ anti-reflective layers were coated 12.6 and 9.7nm/min of deposition rates by increasing oxygen pressure to set the ideal refractive index of 1.283. In case of $SiO_2({\lambda}/2)$ coating, the transmittance increased from 55.0 to 62.7%. The transmittance of $TiO_2({\lambda}/2)$ anti-reflective layer also increased from 55.0 to 64.8%. The flexural strength of $SiO_2({\lambda}/2)$ and $TiO_2({\lambda}/2)$ layer coated sapphire increased from 337.8 to 362.9 and 371.8MPa, respectively. The flexural strength at $500^{\circ}C$ of these materials also increased respectively to 304.5, 358.2MPa from 265.9MPa. From these results, we confirmed these materials can be used as transmission window of infrared light.

Preparation of $SrTiO_3$ Thin Film by RF Magnetron Sputtering and Its Dielectric Properties (RF 마그네트론 스퍼터링법에 의한 $SrTiO_3$박막제조와 유전특성)

  • Kim, Byeong-Gu;Son, Bong-Gyun;Choe, Seung-Cheol
    • Korean Journal of Materials Research
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    • v.5 no.6
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    • pp.754-762
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    • 1995
  • Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.

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Optical Coating for SHG device by RF Sputtering Method (RF 스퍼터링방법에 의한 제2고조파소자의 광학박막 제작)

  • Kim, Yong-Hun;Lee, Seong-Guk;Ma, Dong-Jun;Han, Jae-Yong;Park, Seong-Su;Lee, Sang-Hak
    • Korean Journal of Materials Research
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    • v.6 no.6
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    • pp.636-643
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    • 1996
  • 공진기형 제 2고조파소자(SHG)는 레이저 빔의 에너지 밀도가 높아 고내구성 박막이 필요하다. 본 연구에서는 광학박막 재료로 고융점 산화물인 ZrO2, TiO2, SiO2를 사용하였다. 반응성 스퍼터링 방법으로 제작한 ZrO2, TiO2, SiO2 박막을 XRD, SAM을 사용하여 분석하였고, 박막의 광학적 특성을 평가하였다. SHG 소자의 KTP 및 Nd:YAG 결정의 반사방지막(A/R 코팅)구성은 ZrO2와 SiO2를 사용하여 컴퓨터로 계산하였는데 기본파인 1064nm와 제 2고조파인 532nm에서 각각 0.1%, 0.5%이하의 반사율을 갖도록 하였다. 또한 고반사막(H/R 코팅)의 경우 1064nm에서 99.9%의 반사율을 갖도록 TiO2와 SiO2로 디자인하였다. 제작한 광학박막의 광학적 특성, 레이저 내구성(laser damage threshold), 온습도 안정성 실험 등을 통해 광학박막을 평가하였다.

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