• 한국세라믹학회지
• /
• 제38권3호
• /
• pp.261-266
• /
• 2001

적색 CaTiO$_3$:Pr 형광체 막을 졸-겔법으로 제조하고 형광체의 결정상 및 발광특성에 미치는 열처리 조건 및 Pr 첨가량의 영향에 대하여 연구하였다. CaTiO$_3$:Pr sol로부터 제조된 CaTiO$_3$:Pr 분말은 30~60nm 크기의 입자들이 0.3~0.5$mu extrm{m}$ 크기로 응집된 상태를 나타내었으며, 한편 sol을 borosilicate 기판 위에 4000rpm의 속도로 3회 스핀 코팅하고 열처리하였을 경우 두께 1.2$\mu\textrm{m}$의 CaTiO$_3$:Pr 박막이 형성되었다. CaTiO$_3$:Pr gel 분말을 여러 온도에서 열처리한 경우, $600^{\circ}C$ 이하에서는 비정질이지만, 온도가 증가하면서 erovskite 결정상이 생성되기 시작하여 90$0^{\circ}C$에서는 우수한 perovskite 결정상이 발달되었다. 반면, 박막의 경우에는 80$0^{\circ}C$의 열처리 온도에서는 결정성이 우수한 perovskite 상이 관찰되었으며 이러한 온도는 기존의 분말법의 소결온도에 비하여 300~40$0^{\circ}C$나 낮은 것이다. 0.2 mol% Pr이 첨가되고 90$0^{\circ}C$로 열처리된 분말시편은 최적의 Photoluminescence (PL) 특성을 나타낸 반면, 박막의 경우에는 80$0^{\circ}C$에서 열처리된 시편이 최적의 PL 특성을 나타내었다. 제조된 CaTiO$_3$:Pr 박막에 대하여 Cathodoluminescence (CL) 분석을 행한 결과, 6100$\AA$에서 폭이 좁고 강도가 큰 스펙트럼을 나타냄으로서, 본 실험에서 제조된 박막이 FED(field emission display)등의 적색형광체로 사용될 수 있음을 확인하였다.

• Macromolecular Research
• /
• 제15권3호
• /
• pp.221-224
• /
• 2007

A silica-magnesium bisupport (SMB) was prepared by a sol-gel method for use as a support for a metal-locene/Ziegler-Natta hybrid catalyst. The prepared $rac-Et(Ind)_2ZrCl_2/TiCl_4$/MAO(methylaluminoxane)/SMB catalyst was applied to the copolymerization of ethylene with l-hexene using a variable triethylaluminum (TEA)/transition-metal (Ti) ratio and fixed MAO/transition-metal (Zr) ratio. The effect of the Al(TEA)/Ti ratio on the physical properties and chemical composition distributions (CCDs) of the ethylene-hexene copolymers produced by the hybrid catalyst was investigated. In the ethylene-hexene copolymers, two melting temperatures attributed to the metal-locene and Ziegler-Natta catalysts were clearly observed. The number of CCD peaks was increased from six to seven and the temperature region in which the peaks for the short chain branches of the ethylene-hexene copolymer were distributed became lower as the Al(TEA)/Ti ratio was increased from 300 to 400. Furthermore, the temperature regions corresponding to the lamellas in the copolymer became lower and those corresponding to the small lamellas in the copolymer became higher as the Al(TEA)/Ti ratio was increased from 300 to 400. In the copolymer produced with Al(TEA)/Ti = 500, however, only four CCD peaks were observed and the short chain branches were poorly distributed.

• Bulletin of the Korean Chemical Society
• /
• 제16권2호
• /
• pp.138-143
• /
• 1995

Substituted 3-phenyl-1-silabutanes, 3-chlorophenyl-1-silabutane (1), 3-tolyl-1-silabutane (2), and 3-phenoxyphenyl-1-silabutane (3), were prepared in 68-98% yield by reduction of the corresponding substituted 3-phenyl-1,1-dichloro-1-silabutanes with LiAlH4. The dehydrogenative homopolymerization and copolymerization of the silanes were performed with Cp2MCl2/Red-Al (M=Ti, Hf) catalyst system. The molecular weights of the resulting polymers were in the of range 600 to 1100 (vs polystyrene) with degree of polymerization (DP) of 5 to 8 and polydispersity index (PDI) of 1.6 to 3.8. The monomer silanes underwent the dehydrogenative polymerization with Cp2TiCl2/Red-Al catalyst to produce somewhat higher molecular weight polysilanes compared with Cp2HfCl2/Red-Al catalyst.

• Carbon letters
• /
• 제22권
• /
• pp.48-59
• /
• 2017

This study synthesized pure anatase carbon doped $TiO_2$ photocatalysts supported on a stainless steel mesh using a sol-gel solution of 8% polyacrylonitrile (PAN)/dimethylformamide (DMF)/$TiCl_4$. The influence of the pyrolysis temperature and holding time on the morphological characteristics, particle sizes and surface area of the prepared catalyst was investigated. The prepared catalysts were characterized by several analytical methods: high resolution scanning electron microscopy (HRSEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET), and X-ray photoelectron spectroscopy (XPS). The XRD patterns showed that the supported $TiO_2$ nanocrystals are typically anatase, polycrystalline and body-centered tetragonal in structure. The EDS and XPS results complemented one another and confirmed the presence of carbon species in or on the $TiO_2$ layer, and the XPS data suggested the substitution of titanium in $TiO_2$ by carbon. Instead of using calcination, PAN pyrolysis was used to control the carbon content, and the mesoporosity was tailored by the applied temperature. The supported $TiO_2$ nanocrystals prepared by pyrolysis at 300, 350, and $400^{\circ}C$ for 3 h on a stainless steel mesh were actual supported carbon doped $TiO_2$ nanocrystals. Thus, $PAN/DMF/TiCl_4$ offers a facile, robust sol-gel related route for preparing supported carbon doped $TiO_2$ nanocomposites.

• 한국환경과학회지
• /
• 제29권10호
• /
• pp.943-949
• /
• 2020

In this work, we prepared a heterojunction anode with a surface layer of SnO₂-Sb-Ni (SSN) on a Ti/IrO₂ electrode by thermal decomposition to improve the electrochemical activity of the Ti/IrO₂ electrode. The Ti/IrO₂-SSN electrode showed significantly improved electrochemical activity compared with Ti/IrO₂. For the 0.1 M NaCl and 0.1 M Na₂SO₄ electrolytes, the onset potential of the Ti/IrO₂-SSN electrode shifted in the positive direction by 0.1 V_SCE and 0.4 V_SCE, respectively. In 2.0-2.5 V voltages, the concentration in Ti/IrO₂-SSN was 2.59-214.6 mg/L Cl₂, and Ti/IrO₂ was 0.55-49.21 mg/L Cl₂. Moreover, the generation of the reactive chlorine species and degradation of Eosin-Y increased by 3.79-7.60 times and 1.06-2.15 times compared with that of Ti/IrO₂. Among these voltages, the generation of the reactive chlorine species and degradation of Eosin-Y were the most improved at 2.25 V. Accordingly, in the Ti/IrO₂-SSN electrode, it can be assumed that the competitive reaction between chlorine ion oxidation and water oxidation is minimized at an applied voltage of 2.25V.

• 한국응용과학기술학회지
• /
• 제21권1호
• /
• pp.76-88
• /
• 2004

The catalytic oxidation reaction of several cycloolefins in $CH_2Cl_2$ have been investigated using non-redox metalloporphyrin(M = Ga(III), In(III) and TI(III) complexes as a catalyst and sodium hypochlorite as a terminal oxidant. Porphyrins were $(p-CH_3O)$TPP, $(p-CH_3)$TPP, TPP, (p-F)TPP, (p-Cl)TPP and $(F_{20})$TPP (TPP=5,10,15,20-tetraphenyl-21H,23H-porphyrin) and olefins were cyclopentene, cyclohexene, cycloheptene and cyclooctene, The substrate conversion yield(%) was investigated according to the radius effect of non-redox metal ion, substituent effect and hindrance effect of metalloporphyrin. The conversion yield of cycloolefin was in the following order : $C_5$ < $C_6$ < $C_7$ = $C_8$.

• 한국대기환경학회지
• /
• 제20권6호
• /
• pp.783-792
• /
• 2004

In this study, a thick-film semiconductor odor gas sensor for the detection of $CH_3$SH was developed using SnO$_2$ as the main substrate and was investigated in terms of its sensitivity and reaction time. In the process of manufacturing the sensor, Taguchi's design of experiment (DOE) was applied to analyze the effects of a variety of parameters, including the substrate, the additives and the fabrication conditions, systematically and effectively. Eight trials of experiments could be possible using the 27 orthogonal array for the seven factors and two levels of condition, which originally demands 128 trials of experiments without DOE. The additives of Sb$_2$O$_{5}$ and PdCl$_2$ with the H$_2$PtCl$_{6}$ ㆍ6$H_2O$ catalyst were appeared to be important factors to improve the sensitivity, and CuO, TiO$_2$, V$_2$O$_{5}$ and PdO were less important. In addition, TiO$_2$, V$_2$O$_{5}$ and PdO would improve the reaction time of a sensor, and CuO, Sb$_2$O$_{5}$, PdCl$_2$ and H$_2$PtCl$_{6}$ㆍ6$H_2O$ were negligible. Being evaluated simultaneously in terms of both sensitivity and reaction time, the sensor showed the higher performance with the addition of TiO$_2$ and PdO, but the opposite results with the addition of CuO, V$_2$O$_{5}$, Sb$_2$O$_{5}$ and PdCl$_2$. The amount of additives were superior in the case of 1% than 4%. H$_2$PtCl$_{6}$ㆍ6$H_2O$ would play an important role for the increase of sensor performance as a catalyst.nce as a catalyst.

• 한국결정성장학회지
• /
• 제16권2호
• /
• pp.49-52
• /
• 2006

저손실 Ti:$LiNbO_3$ 광도파로 기판에 외부전계 인가법을 사용하여 주기적으로 도메인을 반전시켰다. $LiNbO_3$의 -Z 면에 Ti 패턴 형성 후 약 $1060^{\circ}C$에서 열처리 과정을 통해 광도파로를 형성하였으며, 제작된 광도파로의 광전송 손실은 ${\sim}0.1dB/cm$ 였다. 도메인 반전을 위해 +Z면에 주기적인 전극 패턴을 형성하였으며, 외부전계의 균일한 인가를 위해 LiCl 전해 용액을 사용하여 도메인을 반전 시켰다. 선택적 화학식각을 통해, 약 $16{\mu}m$의 도메인 반전 주기를 확인 할 수 있었으며, 주기적 도메인 반전구조를 갖는 Ti : $LiNbO_3$ 도파로의 비선형 특성을 측정하였다.

• Corrosion Science and Technology
• /
• 제12권3호
• /
• pp.119-124
• /
• 2013

Nano-multilayered, crystalline AlTiSiN thin films were deposited on WC-TiC-Co substrates by the cathodic arc plasma deposition. The deposited film consisted of wurtzite-type AlN, NaCl-type TiN, and tetragonal $Ti_2N$ phases. Their oxidation characteristics were studied at 800 and $900^{\circ}C$ for up to 20 h in air. The WC-TiC-Co oxidized fast with large weight gains. By contrast, the AlTiSiN film displayed superior oxidation resistance, due mainly to formation of the ${\alpha}-Al_2O_3$-rich surface oxide layer, below which an ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale existed. Their oxidation progressed primarily by the outward diffusion of nitrogen, combined with the inward transport of oxygen that gradually reacted with Al, Ti, and Si in the film.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.45-48
• /
• 2000

High dielectric (Ba,Sr)TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$ increases in Cl$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystalliility of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$ only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.