• Korean Journal of Metals and Materials
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• v.47 no.9
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• pp.573-579
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• 2009

Titanium/aluminum/stainless steel(Ti/Al/STS) clad materials have received much attention due to their high specific strength and corrosion-resisting properties. However, it is difficult to fabricate these materials, because titanium oxide is easily formed on the titanium surface during heat treatment. The aim of the present study is to derive optimized cladding conditions and thereupon obtain the stable quality of Ti/Al/STS clad materials. Ti sheets were prepared with and without pre-heat treatment and Ti/Al/STS clad materials were then fabricated by cold rolling and a post-heat treatment process. Microstructure of the Ti/Al and STS/Al interfaces was observed using a Scanning Electron Microscope(SEM) and an Energy Dispersed X-ray Analyser(EDX) in order to investigate the effects of Ti pre-heat treatment on the bond properties of Ti/Al/STS clad materials. Diffusion bonding was observed at both the Ti/Al and STS/Al interfaces. The bonding force of the clad material with non-heat treated Ti was higher than that with pre-heat treated Ti before the cladding process. The bonding force decreased rapidly beyond $400^{\circ}C$, because the formed Ti oxide inhibited the joining process between Ti and Al. Bonding forces of STS/Al were lower than those of Ti/Al, because brittle $Fe_3Al$, $Al_3Fe$ intermetallic compounds were formed at the interface of STS/Al during the cladding process. In addition, delamination of the clad material with pre-heat treated Ti was observed at the Ti/Al interface after a cupping test.

• Corrosion Science and Technology
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• v.12 no.1
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• pp.50-55
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• 2013

The purpose of this study was to investigate corrosion characteristics of Ti-xTa alloys with Ta contents. Ti-xTa alloys used as samples (x=30, 40%) were arc-melted under argon atmosphere of 99.9% purity. Ti-xTa alloys were homogenized for 12hr at $1000^{\circ}C$ and then water quenched. The surface characteristics of Ti-xTa alloys were investigated using optical microscopy (OM) and X-ray diffractometer (XRD). The anodic corrosion behaviors of the specimens were examined through potentiodynamic, potentiostatic and galvanostatic test in 0.9 % NaCl solution at $36.5{\pm}1^{\circ}C$. After corrosion test, the surface characteristics of Ti-xTa alloys were investigated using OM. The microstructure of Ti-Ta alloy showed the beta structure with Ta content. The corrosion resistance of Ti alloy was improved by increasing Ta content and the corrosion morphology of Ti-Ta alloy showed that the site attacked by chloride ion decreased from the active to passive region with Ta content. Potential of Ti-40Ta alloy increased as time increased, whereas, current density of Ti-40Ta alloy decreased as time increased compared to Ti-30 alloy.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.227.1-227.1
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• 2015

산업이 발달하면서 다양한 화학물질이 배출되고 이로 인하여 환경이 오염되고 있으며, 특히, 대부분의 유기 화합물은 대기오염에 많은 영향을 주는 물질로 알려져 있다. 최근 유기 화합물을 제거하기 위해서 UV와 가시광에서 반응하는 광촉매 연구가 진행되고 있다. 본 연구에서는 밴드갭에 변화를 주는 doped $TiO_2$와 가시광에서 반응하는 조촉매를 이용하여 광촉매의 특성을 향상시키는 coupled $TiO_2$를 제조하였다. Doped $TiO_2$를 제조하기 위해서 비금속 물질인 질소(nitrogen)을 사용하였고, coupled $TiO_2$는 graphine oxide(GO)를 환원하여 $TiO_2$-RGO 촉매를 제조하였다. N-$TiO_2$와 $TiO_2$-RGO의 광학 특성을 평가하기 위해서 UV/Vis 분광광도계를 사용하였다. Methylene blue(MB)와 methyl orange(MO)가 분해되는 반응을 통해서 N-$TiO_2$와 $TiO_2$-RGO의 광촉매 특성을 평가하였다. 또한, MB와 MO 분해 테스트에 395 nm long pass filter를 이용하여 가시광에서의 광촉매 활성을 평가하였다.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.338-343
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• 2010

As an alternative to the W plug used in MOSFETs, a Cu plug with a NiSi contact using Ta / TaN as a diffusion barrier is currently being considered. Conventionally, Ni was first deposited and then NiSi was formed, followed by the barrier and Cu deposition. In this study, Ti was employed as a barrier material and simultaneous formation of the NiSi contact and Cu plug / Ti barrier was attempted. Cu(100 nm) / Ti / Ni(20 nm) with varying Ti thicknesses were deposited on a Si substrate and annealed at $4000^{\circ}C$ for 30 min. For comparison, Cu/Ti/NiSi thin films were also formed by the conventional method. Optical Microscopy (OM), Scanning Probe Microscopy (SPM), X-Ray Diffractometry (XRD), and Auger Electron Microscopy (AES) analysis were performed to characterize the inter-diffusion properties. For a Ti interlayer thicker than 50 nm, the NiSi formation was incomplete, although Cu diffusion was inhibited by the Ti barrier. For a Ti thickness of 20 nm and less, an almost stoichiometric NiSi contact along with the Cu plug and Ti barrier layers was formed. The results were comparable to that formed by the conventional method and showed that this alternative process has potential as a formation process for the Cu plug/Ti barrier/NiSi contact system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.19-19
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• 2009

TiNxOy/TiNx multilayer thin films with a high resistance (~ k$Omega$) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by dc and rf magnetron sputtering, respectively. TiNxOy/TiNx multilayer has been developed to control temperature coefficient of resistance (TCR) by the incorporation of TiNx layer (positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multilayer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multilayer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700 oC for 1 min exhibit a good TCR value and a stable high resistivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.60-63
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• 2000

The $0.94MgTiO_3-0.06SrTiO_3$ ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. According to the X-ray diffraction patterns of the $0.94MgTiO_3-0.06SrTiO_3$ ceramics, the cubic $SrTiO_3$ and hexagonal $MgTiO_3$ structures were coexisted. Increasing the sintering temperature from $1325^{\circ}C$ to $1400^{\circ}C$, average grain size was increased from $5.026{\mu}m$ to $8.377{\mu}m$. In the case of the $0.94MgTiO_3-0.06SrTiO_3$ ceramics sintered at $1325^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 21.66, 2,522(at 7.34GHz), $+71ppm/^{\circ}C$, respectively.

• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.314-318
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• 2001

SiC-TiC composites have been fabricated by using a mechanochemical processing of a mixture of Si, Ti, and C at room temperature and subsequent hot pressing. TiC powders have been obtained by the mechanochemical processing of a mixture of Ti and C whereas SiC powders has not been obtained from a mixture of Si and C. By using the exothermic reaction between Ti and C, SiC-TiC powder could be obtained from the mixture of Si, Ti, and C using the mechanochemical processing for more than 12h. The X-ray diffraction analysis has shown that the powder subjected to the mechanochemical processing consisted of the particles having crystallite size below 10nm. Fully densified SiC-TiC composites have been obtained by hot-pressing of the powder at 1850$\^{C}$ for 3h and it has shown comparable mechanical properties to those of the SiC-TiC composites prepared from the commercially available SiC and TiC powders. Flexural strength of 560 MPa and fracture toughness of 4.8 MP$.$am$\_$1/2/ have been shown for the SiC-TiC composites with composition corresponding to 0.75:0.25:1 mole ratio of Si:Ti:C.

• Journal of Korean Ophthalmic Optics Society
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• v.9 no.1
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• pp.161-166
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• 2004

In this research, TiN films has been grown to the stainless steel substrate by ion beam assisted deposition. TiN film was grown to the nitrogen atmosphere of around $10^{-15}$ Torr with Arion bombardment. The chemical composition, color and adhesion of TiN films were examined as a variation of En(ion energy per atom). The N/Ti ratio increased linearly as the increase of En and saturated around 1.2 at high En. As a results, the bright golden color was obtained when En reached a certain value of Ecn. As a results, the N/Ti ratio is about 0.9.

• Journal of Industrial Technology
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• v.24 no.B
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• pp.133-138
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• 2004

The photodegradation of phenol and toluene with the $TiO_2$-coated polyethylene (PE) particles were investigated in the slurry type photocatalytic reactor, changing the $TiO_2$ particle sizes, initial phenol and toluene concentrations, and the oxygen flow rate. The nano-sized $TiO_2$ photocatalyst particles were prepared by the diffusion flame reactor and they were coated onto PE particles by using the hybridization system for the efficient recollection of $TiO_2$-coated particles after photodegradation experiments. The degradation efficiencies of phenol and toluene with the $TiO_2$-coated PE particles were more than 90% after photodegradation of 80 minutes for most cases. The efficiencies of photodegradation with the $TiO_2$-coated PE particles were found to be lower than those by the pure $TiO_2$ particles by 50%, because of the decrease in specific surface area of $TiO_2$ particles in PE particles.

• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.510-516
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• 1993

$PbTiO_3$ thin films have been formed by rapid thermal annealing(RTA) of $TiO_2$/Pb/$TiO_2$ multilayer films deposited on Si wafers by RF sputtering. Based on the optimal depositon conditions of TiO2 and Pb, $TiO_2$/Pb/$TiO_2$ three layers were deposited for 900$\AA$ each. These films were subjected to RTA process at the temperatures ranging from $400^{\circ}C$ to $900^{\circ}C$ for 30 seconds in air, and were analyzed by X-ray diffraction and transmission electron microscopy to investigate the phases and the microstructures. As a result, perovskite $PbTiO_3$ phases was obtained above $500^{\circ}C$ with the trace of unreacted $TiO_2$. RBS analysis revealed the anisotropic behavior of diffusion that the diffusivity of Pb to the bottom $TiO_2$ layer was faster than that of Pb to the top $TiO_2$ layer. The amorphous Pb-silicate was formed between film and Si substrate due to the diffusion of Pb, but Pb-silicate existed locally at the interface and the amount of that phase was very small. Therefore the effect of bottom $TiO_2$ layer as a diffusion barrier was confirmed. $PbTiO_3$ films formed by current technique showed a relative dielectric constant of 60, and the maximum breakdown field reached 170kV/cm.