• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.441-448
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• 1993

The Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ by rf magnetron sputtering method have individual preferential orientations as a function of composition (X=0, 0.25, 0.5, 0.75, 1) due to the stress relief interactions among the intrinsic compressive stress, thermal tensile stress adn extrinsic compressive stress (compressive stress in case of BaTiO3(Tc=12$0^{\circ}C$) and Ba0.75Sr0.25TiO3(Tc=57$^{\circ}C$)). This behavior also appears on the (BaSr)TiO3 thin films (X=0.5) deposited on ITO-coated glass substrate at deposition temperature between 35$0^{\circ}C$ and 55$0^{\circ}C$. The composition of Ba1-xSrxTiO3 thin films deposited on ITO-coated glass substrate at 55$0^{\circ}C$ is close to stoichiometry (1.009~1.089 in A/B ratio), but the compositional deviation from a stoichiometry is larger as SrTiO3 is added. The morphology of Ba1-xSrxTiO3 thin films is very similar for over all substrate temperatures, and the roughness due to the differences of cluster size is the smallest at X=0.25.

• Journal of the Korean Ceramic Society
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• v.33 no.2
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• pp.177-182
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• 1996

strontium titanate (SrTiO3) thin films deposited on Pt/MgO were prepared by Plasma Enhanced Metal Orgainc Chemical vapor Deposition (Pe-MOCVD). The crystallinity of SrTiO3 thin films increased with increasing depo-sition temperature and SrF2 second phase disappeared at 55$0^{\circ}C$ The films showed a dielectric constant of 177 and a dissipation factor of 0.0195 at 100 kHz. The variation of capacitance of the films with applied voltage was small showing paraelectric properties. The charge storage density and leakage current density were 40fC/${\mu}{\textrm}{m}$2 and 3.49$\times$10-7 A/cm2 at 0.25 MV/cm, respectively.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.49-51
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• 1997

New complex perovskite compounds (Na0.5Sr0.5)(Ti0.5Nb0.5)O3, (Na0.5Sr0.5)(Zr0.5Ti0.5)O3 and (Na0.5Sr0.5)(Ti0.5Ta0.5)O3 have been prepared. The crystal structures of these compounds were determined by powder X-ray Rietveld analysis. The crystal structure of (Na0.5Sr0.5)(Ti0.5Nb0.5)O3 and (Na0.5Sr0.5)(Zr0.5Ta0.5)O3 was Pmmn, and that of (Na0.5Sr0.5)(Ti0.5Nb0.5)O3 was I4/mmm. All these compounds showed the superstructure due to the oxygen octahedron distortion. The selected bond distances and bond angles were calculated by the OFFER. The octahedron distortion for each sample, which was measured from the bond distances and bond angles, showed the following order: (Na0.5Sr0.5)(Z0.5Ta0.5)O3> (Na0.5Sr0.5)(Ti0.5Nb0.5)O3 > (Na0.5Sr0.5)(Ti0.5Ta0.5)O3. Dielectric properties were measured for the samples. In this study, the crystal structure and dielectric properties of the new complex perovskite structures and discussed.

• Journal of the Korean Chemical Society
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• v.25 no.4
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• pp.236-245
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• 1981

The electrical conductivities of oxidized pure and Ni-doped $SrTiO_3$ single crystals were measured as a function of the oxygen partial pressure($Po_2$) at temperature from 700 to $1200^{\circ}C$ and $Po_2$ of $10^{-8}$ to $10^{-1}$ atm. Plots of log ${\sigma}$ vs. 1/T at constant $Po_2$ were found to be linear, and the activation energies obtained from the slopes of these plots have an average value of 1.34 eV for oxidized pure and 1.06 eV for oxidized Ni-doped $SrTiO_3$ single crystals at $Po_2$'s between $10^{-8}$ to $10^{-1}$ atm. The log ${\sigma}$ vs. log $Po_2$ curves at constant temperature were found to be linear with an average slope of ${\frac{-1}{5.6}}\;{\sim}\;{\frac{-1}{6.2}}$ in the $Po_2$ ranges. From the agreement between experimental and theoretically predicted values for the electrical conductivity dependences on $Po_2$, an oxygen vacancy defect model was found applicable to oxidized pure and Ni-doped $SrTiO_3$ single crystals over the temperature range, 700~$1200^{\circ}C$. Conduction mechanisms were proposed to explain the dependences of electrical conductivity on temperature and $Po_2$.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.201-204
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• 2009

$BaTiO_3/SrTiO_3$ and $PbTiO_3/PbZrO_3$ superlattice thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the pulsed laser deposition process. The morphologies and physical properties of deposited films were characterized by using X-ray diffractometer, HR-SEM, and Impedance Analyzer. XRD data and SEM images of the films indicate that each layer was well deposited alternatively in the superlattice structure. The dielectric constant of $BaTiO_3/SrTiO_3$ superlattice thin film was higher than that of individual $BaTiO_3$ or $SrTiO_3$ film. Same result was obtained in the $PbTiO_3/PbZrO_3$system. The dielectric constant of a superlattice film was getting higher as the number of layer is increased.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.74-74
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• 1999

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.2
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• pp.11-19
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• 1992

$SrTiO_3$powders were synthesized from the chloride and the nitrate aqueous solution by spray pyrolysis method using ultrasonic vibrator. The concentration of mother solution was prepared 0.05M and O.lM. The carrier gas flow rate was 0.5cm/sec and 1.5cm/sec, respectively. The formation processing was investigated in the 0.05M and 0.05cm/sec. The $SrTiO_3$powders could not be synthesized from chloride aqueous solution. The prepared powders from nitrate aqueous solution was SrTi03 with cubic structure and nearly sphere particle for all samples. Mean particle size was increased from $0.49{\mu}m$ to $0.67{\mu}m$ by changing the carrier gas flow rate from O.5cm/sec to 1.5cm/sec. Also, mean particle size increased from $0.49{\mu}m$to $0.55{\mu}m$by changing the concentration of mother solution from O.05M to O.1M. Atomizing droplet size was $14.3{\mu}m$. The shape of particles was very porous by evaporation of solvent at the initial step. But through the each step upwards, shape of particles was formed themselves into a nearly roundish.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1466-1468
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• 1994

In this paper Dielectric and strain properties of (1-x-y)PMN-yPT-xST Ceramics have been investigated as a function of the amount of $SrTiO_3(ST)$. The $SrTiO_3$ content is ranged from 0.01-0.06(wt%). As the amount of ST is increased, dielectric constant has a maximum value at 0.05 mol composition. The Curie temperature is decreased linearly with increasing ST composition and Polarization properties have been investigated. Coercive field and ramnant polarization has a maximum value at 0.01mol composition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.5-8
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• 1994

In this paper, Dielectric and strain properties of (1-x-y)PMN-yPT-xST Ceramics hale been investigated as a function of the amount of SrTiO$_3$(ST). The SrTiO$_3$ content is ranged from 0.01-0.05(wt%). As the amount of ST is increased, dielectric constant has a maximun value at 0.05 mol% composition. The Curie temperature is decreased linearly with increasing ST composition and Polarization properties have been investigated. Coercive field and remnant polarization has a maximum value at 0.01mo1% composiion.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.138-144
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• 1995

It is commonly believed that high permittivity materials will be necessary for future high density Gbit DRAMs. In a first part, we explain the choice of SrTiO3 by ECR MOCVD for Gbit-scale DRAMs. In a second part, after describing the ECR MOCVD system and presenting the requirements SrTiO3 thin films should meet for use in Gbit-scale DRAMs, the physical and electrical properties of srTiO3 thi film prepared by ECR MOCVD are then studied. A stacked capacitor technology, suitable for use in 1 Gbit DRAM, and comprising high permittivity SrTiO3 thin films prepared by ECR MOCVD at $450^{\circ}C$ on electron beam and RIE patterned RuO2/TiN storage nodes is finally described.