• Progress in Superconductivity and Cryogenics
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• v.15 no.3
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• pp.1-4
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• 2013

We investigated the effect of Nb substitution for Ru on the structural and magnetic properties of $(Ru_{1-x}Nb_x)\;Sr_2(Sm_{1.4}Ce_{0.6})Cu_2O_z$ Samples. X-ray diffraction measurements indicated that nearly single-phase samples are formed in the range from x = 0 to 1.0. The superconducting transition temperature determined from the inflection in the field-cooled magnetic susceptibility decreased only slightly from $T_c$ = 25 K for x = 0 to $T_c$ = 22 K for x = 1.0, in consistent with the change in room temperature thermopower of the samples. However, the Nb substitution for Ru above x = 0.25 significantly suppressed the weak ferromagnetic component of the field-cooled magnetic susceptibility. It was also found that the Nb substitution for Ru results in an enhanced diamagnetic susceptibility with Nb content above x = 0.5 in both zero field-cooled and field-cooled magnetization measurements, in contrast to the behavior of the samples with $x{\leq}0.5$ in which the diamagnetic susceptibility decreases as the Nb content increases.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.11a
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• pp.29-30
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• 1998

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1529-1534
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• 2018

We used in-situ synchrotron X-ray scattering to investigate phase transformations of octahedral tilted monoclinic $SrRuO_3$ (MSRO) and tetragonal SRO (TSRO) thin films on $SrTiO_3$ (STO) substrates. The octahedral tilted MSRO thin films were highly crystalline and the monoclinic distortion angle was $0.45^{\circ}$. The phase transition temperature from the MSRO to TSRO phase occurred at approximately $200^{\circ}C$ as a second order transition. Conversely, no phase transformations of the TSRO thin film occurred within the range from RT to $250^{\circ}C$. The octahedral $RuO_6$ rotation was strongly affected by the phase transformation in the SRO thin films.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.6
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• pp.543-549
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• 2013

In this study, $La_{0.9}Sr_{0.1}Cr_{0.7}M_{0.3}O_{3{\pm}{\delta}}$ (M=Mn, Ru, Fe, Ni) were prepared by sol-gel method and water gas shift reaction with simulated coal-derived syngas between $400{\sim}650^{\circ}C$ was conducted to evaluate the catalytic activity of prepared catalysts. Physico-chemical properties were characterized by XRD, BET, SEM-EDS and TPR. The formation of perovskite crystallite, $LaCrO_3$ was confirmed and the highest surface area was measured with $La_{0.9}Sr_{0.1}Cr_{0.7}Mn_{0.3}O_{3{\pm}{\delta}}$. Equilibrium conversion of CO above $550^{\circ}C$ was achieved except $La_{0.9}Sr_{0.1}Cr_{0.7}Fe_{0.3}O_{3{\pm}{\delta}}$. and methanation reaction was carried out as side reaction of water gas shift reaction with $La_{0.9}Sr_{0.1}Cr_{0.7}Ni_{0.3}O_{3{\pm}{\delta}}$ and $La_{0.9}Sr_{0.1}Cr_{0.7}Ru_{0.3}O_{3{\pm}{\delta}}$. Conclusively, $La_{0.9}Sr_{0.1}Cr_{0.7}M_n{0.3}O_{3{\pm}{\delta}}$ was the most suitable catalyst of water gas shift reaction above $500^{\circ}C$ for CO conversion and hydrogen production.

• Journal of Magnetics
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• v.13 no.2
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• pp.61-64
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• 2008

We studied the effect of the variation of the lattice constant on the electrical properties of $SrRuO_3$ thin films. In order to obtain films with different volumes, we varied the substrate temperature and oxygen pressure during the growth of the films on $SrTiO_3$ (001) substrates. The films were grown using a pulsed laser deposition method. The X-ray diffraction patterns of the grown films at low temperature and low oxygen pressure indicated the elongation of the c-axis lattice constant compared to that of the films grown at a higher temperature and higher oxygen pressure. The in-plane strain states are maintained for all of the films, implying the expansion of the unit-cell volume by the oxygen vacancies. The variation of the electrical resistance reflects the temperature dependence of the resistivity of the metal, with a ferromagnetic transition temperature inferred form the cusp of the curve being observed in the range from 110 K to 150 K. As the c-axis lattice constant decreases, the transition temperature linearly increases.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.263-268
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• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

• Proceedings of the Korean Magnestics Society Conference
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• 2006.11a
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• pp.12-13
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• 2006

• Proceedings of the Korean Magnestics Society Conference
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• 2011.06a
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• pp.15-16
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• 2011

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.124.2-124.2
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• 2000

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.650-652
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• 2003