• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
• /
• pp.236-236
• /
• 2004

• 한국환경과학회:학술대회논문집
• /
• 한국환경과학회 2018년도 정기학술대회 발표논문집
• /
• pp.165-165
• /
• 2018

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.196-196
• /
• 2008

We have investigated that the effect of post annealing on the structural and electrical properties of $Ba_{0.5}Sr_{0.5}TiO_3$ thin films. The BST thin films were deposited on n-type 4H-silicon carbide(SiC) using pulsed laser deposition (PLD). The deposition was carried out in oxygen ambient 100mTorr for 5 minutes, which results in about 300nm-thick BST films. For the BST/4H-SiC, 200nm thick silver was deposited on the BST films bye-beam evaporation. The X-ray diffraction patterns of the BST films revealed that the crystalline structure of BST thin films has been improved after post-annealing at $850^{\circ}C$ for 1 hour. The root mean square (RMS) surface roughness of the BST film measured by using a AFM was increased after post-annealing from 5.69nm to 11.49nm. The electrical properties of BST thin film were investigated by measuring the capacitance-voltage characteristics of a silver/BST/4H-SiC structure. After the post-annealing, dielectric constant of the film was increased from 159.67 to 355.33, which can be ascribed to the enhancement of the crystallinity of BST thin films.

• 대한환경공학회지
• /
• 제27권6호
• /
• pp.651-656
• /
• 2005

톨루엔은 섬유산업 공정에서 발생하는 주요한 유해성 대기 오염원으로 간주된다. 본 연구에서는 ${\gamma}-Al_2O_3$를 지지체로 한 전이 금속 산화물 촉매(Cu, Mn, V, Cr, Co, Ni, Ce, Sn, Fe, Sr, Cs, Mo, La, W, Zn)를 제조하여 톨루엔 완전 산화 반응을 조사하였다. XRD, FE-SEM, BET와 TPR 기법을 사용하여 금속 촉매의 특성을 조사하였다. 촉매 가운데 Cu/${\gamma}-Al_2O_3$ 촉매가 가장 우수한 활성을 보여주었다. BET결과 촉매 활성의 증가는 비표면적과는 관련이 적은 것으로 나타났으며, X선 회절 분석에서 대부분의 촉매들이 무정형으로 존재함이 관찰되었다. FE-SEM을 관찰한 결과, 전이금속 산화물 촉매 중 구리산화물 촉매가 지지체 표면에 고르게 분산되어 있음을 확인할 수 있었다. 톨루엔 산화반응에 따른 촉매활성 효과는 ${\gamma}-Al_2O_3$ 지지체 위에 전이금속 산화물 촉매가 고르게 분산된 점과 촉매 표면의 우수한 환원 특성에 기인하는 것으로 설명할 수 있었다.

• 분석과학
• /
• 제13권3호
• /
• pp.309-314
• /
• 2000

리튬 용융염($LiC+Li_2O$) 내에 미량으로 존재하는 핵분열생성물을 유도결합 플라스마 원자방출분광기(ICP-AES)를 이용하여 분석하였다. 분석대상 원소 중 감도가 가장 좋은 파장을 선택해 이들 파장에서 리튬 500, 1,000, 2,000 mg/L에 따른 분광학적 간섭 여부를 확인한 결과, 분석원소중 0.1 mg/L 이하의 Y, Nd, Sr, La, Eu의 방출세기는 리튬의 농도가 2,000 mg/L까지 증가시켜도 분광학적 간섭을 받지 않은 반면, Mo, Ba, Ru, Pd, Rh, Zr, Ce는 10% 에서 50% 이상 분광학적 간섭과 매트릭스에 의한 스펙트럼 방해가 나타났다. 리튬 매질로부터 미량 금속원소들을 군분리하기 위하여 모의 용융염 용액을 조제해 암모니아수를 가한 후 분리하고 다시 산처리하여 얻은 용액을 ICP-AES로 회수율을 측정하였다. 분석원소 중 Ru, Y, Rh, Zr, Nd, Ce, La, Eu의 회수율은 90% 이상인 반면 Mo, Ba, Pd, Sr는 낮은 회수율을 보여주었으며, 가해준 암모니아수 양이 증가할수록 회수율이 증가하는 경향을 보였다.

• Ocean and Polar Research
• /
• 제26권2호
• /
• pp.231-243
• /
• 2004

Sequential extraction was carried out on twenty two subsamples of three ferromanganese crusts from three seamounts (Lemkein, Lomilik, and Litakpooki) near the Marshall Islands in the western Pacific. The extraction was designed to fractionate Fe-Mn crust forming elements into low defined groups: (1) exchangeable and carbornate, (2) Mn-oxide, (3) Fe-oxyhyd.oxide, and (4) residual fraction. X-ray diffraction result shows that target material were well removed by each extraction step except for CFA in phosphatized crusts generation. According to chemical analysis of each leachate, most of elements in the Fe-Mn crusts are bound with two major phases. Mn, Ba, Co, Ni, Zn, (Fe, Sr, Cu, and V) are strongly bounded with Mn-oxide $({\delta}-MnO_2)$ phase, whereas Fe, Ti, Zr, Mo, Pb, Al, Cu,(V, P, and Zn) show chemical affinity with Fe-oxyhydroxide phase. This result indicates that significant amount of Al, Ti, and Zr can not be explained by detrital origin. Ca, Mg, K, and Sr mainly occur as exchangeable elements and/or carbonate phase. Outermost layer 1 and inner layer 2 which are both young crusts generations are similar in chemical speciations of elements. However, some of Fe-oxyhydroxide bounded elements (Pb, Y, Mo, Ba, Al, and V) in phosphatized innermost layer 3 are released during phosphatization and incorporated into phosphate (Pb, Y, Mo, and Ba) or Mn-oxide phase (Al and V). Our sequential extraction results reveal that chemical speciations of elements in the hydrogenetic crusts are more or less different from interelemental relationship calculated by statistical method based on bulk chemistry.

• Korean Chemical Engineering Research
• /
• 제59권4호
• /
• pp.557-564
• /
• 2021

페로브스카이트 구조를 갖는 Sr_0.92Y_0.08Ti_1-xV_xO_3-δ (SYTV)는 고체산화물 연료 전지(Solid oxide fuel cell, SOFC)에서 H₂S를 포함하는 연료를 사용하기 위한 대체 연료극으로 연구되었다. Sr_0.92Y_0.08TiO_3-δ (SYT)의 전기화학적 성능을 향상시키기 위해 페로브스카이트의 B-사이트에 위치한 티타늄을 바나듐으로 치환하였다. 페치니법을 통해 합성된 SYTV는 작동 온도 조건에서 추가적인 부산물의 형성 없이 YSZ(yttria-stabilized zirconia) 전해질과 화학적으로 안정했다. 바나듐의 치환량이 증가함에 따라 산소 공공 결함(Oxygen vacancy)이 증가하였으며, 생성된 산소 공공 결함으로 인해 연료극의 이온 전도도가 증가했다. 전지 성능은 850 ℃ 순수한 H₂ 연료 조건에서 바나듐 치환 정도에 따라 1 mol.%의 바나듐이 치환된 경우 19.30 mW/cm² 이고 7 mol.%의 바나듐이 치환된 경우 34.87 mW/cm²이다. 1000 ppm의 H₂S를 포함하는 H₂ 연료조건에서 cell의 최대 전력밀도는 1 mol.%의 경우 22.34 mW/cm²이고 7 mol.%의 경우 73.11 mW/cm²로 증가하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제50권11호
• /
• pp.539-543
• /
• 2001

ln this paper, the $Sr_{l-x}Ca_xTiO_3(0\leqx\leq0.2)-based$ grain boundary layer ceramics were fabricated to measure dielectric properties with the sintering temperature and the thermal treatment time. The sintering temperature and time were $1420~15206{\circ}C$, 4hours, and the thermal treatment temperature and time of the specimen were $l150^{\circ}C$, 1, 2, 3hours, respectively. The structural and the dielectric properties were investigated by SEM, X-ray, HP4194A and K6517. The average grain size was increased with increasing the sintering temperature, but it decreased up to 15mo1% with increasing content of Ca. X-ray diffraction analysis results showed that all specimens were the cubic structure, and the main peaks were moved to right and the lattice constant were decreased with increasing content of Ca. The appropriate thermal treatment time and temperature of CuO to obtain dielectric properties of $\varepsilon_r>50000,\; tan \delta<0.05\; and \;\DeltaC<\pm10%$ were 2hrs and $l150^{\circ}C$, respectively.

• Nuclear Engineering and Technology
• /
• 제41권3호
• /
• pp.319-326
• /
• 2009

This study was carried out to investigate the high-acidity co-separation of Am and RE from a simulated radwaste solution by a solvent extraction using a mixture of Dimethyldibutyltetradecylmalonamide (DMDBTDMA, as an extractant) and dihexyl octanamide (DHOA, as a phase modifier) diluted with n-dodecane (NDD). All the experiments were conducted as a batch type. First, the environmentally friendly DMDBTDMA and DHOA composed of only CHON atoms were self-synthesized. Then, the conditions for the prevention of a third phase, generated in the organic phase were examined. In addition, the effects of the concentration of nitric acid, DHOA, oxalic acid and $H_2O_2$ on the co-extraction of Am and RE were elucidated. Consequently, the optimum condition of (0.5M DMDBTDMA+0.5M DHOA)/NDD-0.3M $C_2H_2O_4-4.5M$ $HNO_3$ and O/A=2 was obtained through experimental work. Under this condition, the extraction yields were found to be about 80% for Am, more than 70% for RE such as La, Eu, Nd, Ce, etc., 3% for Cs and Sr, 69% for Fe and less than 11% for Mo and Ru. For the co-extraction of Am and RE, Fe should be removed in advance or prevented from a co-extraction with Am by controlling the different extraction rates of Am and Fe. About 95% of the Am and RE in the organic phase were stripped using a 0.5M $HNO_3$.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제8권1호
• /
• pp.66-79
• /
• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.