• Anxiety and mood
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• v.6 no.2
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• pp.119-124
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• 2010

Objective : The reliability and validity of the Korean version of the Patient Health Questionnaire-9 (PHQ- 9) was examined in Korean patients with depressive symptoms. Methods : Eighty six outpatients diagnosed as major depressive disorder or depressive episode of bipolar I disorder according to the DSM-IV criteria were assessed with the PHQ-9, Hamilton Depression Rating Scale (HDRS), the Quick Inventory of Depressive Symptomatology Self Report (QIDS-SR), and the Center for Epidemiologic Studies Depression Scale (CES-D). Results : The Cronbach's alpha coefficient from the PHQ-9 was 0.81. And the correlations of each item with the total score were statistically significant (r=0.28-0.70, p<0.01). The test-retest correlation coefficient (r=0.89, p<0.01) was relatively high and correlations of the PHQ-9 with the HDRS, QIDS-SR and CES-D were 0.70, 0.81, and 0.81 respectively. Conclusion : These results demonstrated that the Korean version of PHQ-9 could be a reliable and valid tool for the screening and assessment of depressive patients. The Korean version of PHQ-9 will be a useful tool for screening depressive symptoms in Korea.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.9-12
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)$ thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using RF magnetron sputtering method. With increasing post-annealing temperature from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}C/cm^{2}$] 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of $750[^{\circ}C]$ is $1.01{\times}10^{-8}A/cm^2$ at 100[kV/cm]

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.22-25
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• 2000

Polycrystalline SBTN layered ferroelectric thin film with various Nb mole ratios were prepared by sol-gel method Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperature and characterized in terms of phase and microstructure. The films were crystallized with a high (105) diffraction intensity and had rodike structure, SBTN films fired at 800$^{circ}C$ revealed standard hysteresis loops with no fatigue for up to 10$^{10}$ cycles. At an applied voltage of 5V the dielectric constant($varepsilon$) , dissipation factor (tan $delta$), remanent polarization(ZPr) and coercive field(Ec) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$) $O_{9+}$$alpha$/ thin film(x=0.1) prepared on Pt/ $SiO_2$/Si (100) were about 277.7, 0.042, 3.74$mu$C/$textrm{cm}^2$, and 24.8kv/cm respectively.ly.y. respectively.ly.y.y..

• Nuclear Engineering and Technology
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• v.52 no.1
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• pp.109-114
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• 2020

This work presents the results of laboratory scale tests of the CARBOFLUOREX (CARBOnate FLUORide EXtraction) process - a novel technology for the recovery of U and Pu from the solid fluorides residue (fluorination ash) of Fluoride Volatility Method (FVM) reprocessing of spent nuclear fuel (SNF). To study the oxidative leaching of U from the fluorination ash (FA) by Na₂CO₃ or Na₂CO₃-H₂O₂ solutions followed by solvent extraction by methyltrioctylammonium carbonate in toluene and purification of U from the fission products (FPs) impurities we used a surrogate of FA consisting of UF₄ or UO₂F₂, and FPs fluorides with stable isotopes of Ce, Zr, Sr, Ba, Cs, Fe, Cr, Ni, La, Nd, Pr, Sm. Purification factors of U from impurities at the solvent extraction refining stage reached the values of 10⁴-10⁵, and up to 10⁶ upon the completion of the processing cycle. Obtained results showed a high efficiency of the CARBOFLUOREX process for recovery and separating of U from FPs contained in FA, which allows completing of the FVM cycle with recovery of U and Pu from hardly processed FA.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1546-1548
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2$/ $SiO_2$/Si) using RF magnetron sputtering method. With increasing annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], Bi-layered perovskite phase was crystallized above 650[$^{\circ}C$]. The dielectric constant is 213 at annealing temperature of 750[$^{\circ}C$] and dielectric loss have a stable value within 0.1. Leakage current density is $1.01{\times}10^{-8}A/cm^2$ at annealing temperature of 750[$^{\circ}C$].

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.415-423
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• 1996

Thin film technologies for fabricating SQUIDs involve etching and deposition procedures with the proper substrate materials and $YBa_2Cu_3O_{7-d}$ (YBCO) as the high $T_c$ superconductor. YBCO were prepared on various substrates of MgO, $SrTiO_3$, and $LaAlO_3$ by using off-axis magnetron sputtering methods and annealing in-situ. The parameters of film fabrication processes had been optimized to yield good quality films in terms of the critical temperature $T_c$ and the critical current density $J_c$. The optimized processes yielded $T_C$>90K along with $J_c$>$10_6A$$extrm{cm}^2$ at 77K and>$2\times10_7A/Cm^2$ at 5K. We fabricated step-edge type dc-SQUIDs and directly coupled magnetometers, producing step edges on MgO(100) substrates by etching with Ar-ion beam, depositing YBCO material on them, then patterning them by using ion-milling technique. Circuitizing washer-shape SQUIDs to possess a pair of step-edge junctions of 2-5$\mu$ line width with a high angle>$50^{\circ}C$ , we examined their I-V characteristics thoroughly and Shapiro steps clearly as we irradiate microwaves of 8-20 GHz frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.174-174
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• 2008

Non-volatile memories using ferroelectric-gate field-effect transistors (Fe-FETs) with a metal/ferroelectric/semiconductor gate stack (MFS-FETs) make non-destructive read operation possible. In addition, they also have features such as high switching speed, non-volatility, radiation tolerance, and high density. However, the interface reaction between ferroelectric materials and Si substrates, i.e. generation of mobile ions and short retention, make it difficult to obtain a good ferroelectric/Si interface in an MFS-FET's gate. To overcome these difficulties, Fe-FETs with a metal/ferroelectric/insulator/semiconductor gate stack (MFIS-FETs) have been proposed, where insulator as a buffer layer is inserted between ferroelectric materials and Si substrates. We prepared $SrBi_2Ta_2O_9$ (SBT) film as a ferroelectric layer and $LaZrO_x$ (LZO) film as a buffer layer on p-type (100) silicon wafer for making the MFIS-FET devices. For definition of source and drain region, phosphosilicate glass (PSG) thin film was used as a doping source of phosphorus (P). Ultimately, the n-channel ferroelectric-gate FET using the SBT/LZO/Si Structure is fabricated. To examine the ferroelectric effect of the fabricated Fe-FETs, drain current ($I_d$) versus gate voltage ($V_g$) characteristics in logarithmic scale was measured. Also, drain current ($I_d$) versus drain voltage ($V_d$) characteristics of the fabricated SBT/LZO/Si MFIS-FETs was measured according to the gate voltage variation.

• Nuclear Engineering and Technology
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• v.55 no.5
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• pp.1734-1741
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• 2023

This work presents the synthesis and preparation of a new glass system described by the equation of (70-x) B₂O₃-5TeO₂ -20SrCO₃-5ZnO -xBi₂O₃, x = 0, 1, 5, 10, and 15 mol. %, using the melt quenching technique at a melting temperature of 1100 ℃. The photon-shielding characteristics mainly the linear attenuation coefficient (LAC) of the prepared glass samples were evaluated using Monte Carlo (MC) simulation N-particle transport code (MCNP-5) at gamma-ray energy extended from 59 keV to 1408 keV emitted by the radioisotopes Am-241, Ba-133, Cs-137, Co-60, Na-22, and Eu-152. Furthermore, we observed that the Bi₂O₃ content of the glasses had a significantly stronger impact on the LAC at 59 and 356 keV. The study of the lead equivalent thickness shows that the performance of fabricated glass sample with 15 mol.% of Bi₂O₃ is four times less than the performance of pure lead at low gamma photon energy while it is enhanced and became two times lower the perforce of pure lead at high energy. Therefore, the fabricated glasses special sample with 15 mol.% of Bi₂O₃ has good shielding properties in low, intermediate, and high energy intervals.

• Transactions of the Korean Society of Automotive Engineers
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• v.10 no.3
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• pp.93-100
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• 2002

For natural gas and LPG fuel, measurements on the concentrations of individual exhaust hydrocarbon species have been made as a function of air-fuel ratio in a 2-liter four-cylinder engine using a gas chromatography. NMHC in addition to the species of HC, other emissions such as CO$_2$, CO and NOx were examined for natural gas and LPG at 1800rpm far two compression ratios (8.6 and 10.6). Fuel conversion efficiencies were also investigated together with emissions to study the effect of engine parameters on the combustion performances in gas engines especially under the lean bum conditions. It was found that CO$_2$ emission decreased with smaller C value of fuel, leaner mixture strength and the higher compression ratio. HC emissions from LPG engine consisted primarily of propane (larger 60%), ethylene and propylene, while main emissions from natural gas were mothane (larger than 60%), ethane, ethylene and propane on the average. The natural gas was proved to give the less ozone formation than LPG fuel. This was accomplished by reducing the emissions of propylene, which has relatively high MIR factor, and propane that originally has large portion of LPG. In addition, natural gas shows a benefit in other emissions (i.e. NMHC,NOx, CO$_2$and CO), SR and BSR values except fuel conversion efficiency.

• Journal of the Korean Ceramic Society
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• v.54 no.5
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• pp.395-399
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• 2017

The thermal properties and crystallization behavior of calcium phosphate glass fabricated using eggshell were examined. Nature eggshell has several impurities in the main component of $CaCO_3$. To manufacture calcium phosphate glass, washed eggshell was dissolved in aqua-regia while adding a solution of isopropyl alcohol, D. I. water and phosphoric acid. The calcined precursor was melted at $1000^{\circ}C$, and the glass ($T_g$ : $540^{\circ}C$) was crystallized at $620{\sim}640^{\circ}C$, which temperature range is relatively low compared to the crystallization temperature of other general types of calcium phosphate glass. The calcium phosphate glass using eggshell was successfully crystallized without any additional nucleating agents due to the multiple effects of impurities such as $Fe_2O_3$, $Al_2O_3$, SrO and $SiO_2$ in the eggshell. The main crystalline phase was ${\beta}-Ca(PO_3)_2$ and a biocompatible material, hydroxyapatite, was also observed. The crystallization process was completed under the condition of a holding time of only 1 h at the low temperature.