• 자원환경지질
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• 제38권4호
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• pp.481-492
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• 2005

이 연구에서는 광주지역 하상퇴적물에 대한 지질집단별 지구화학적 특성에 대해 규명 하고자 한다. 이를 위해 물이 흐르고 있는 1차 수계를 대상으로 하상퇴적물시료 104개를 채취하였고, 실험실에서 자연건조 시켰다. 화학분석을 위한 시료는 알루미나 몰타르를 이용하여 200메쉬 이하로 분쇄하였고, XRF ICP-AES, NAA분석을 실시하였다. 연구지역 하상퇴적물에 대해, 지질집단별 지구화학적 특성 비교와 기존 암석에 대한 연구에서 얻어진 암석화학적인 특성과의 비교를 위해, 선캠브리아기 화강편마암 지역, 쥬라기 화강암 지역, 백악기 화순안산암 지역으로 분리하였다 광주지역 하상퇴적물의 주성분원소 함량은 $SiO_2\;51.89\~70.63\;wt.\%,\;Al_2O-3\;12.91\~21.95\;wt.\%,\;Fe_2O_3\;3.22\~9.89\;wt.\%,\;K_2O\;1.85\~4.49\;wt.\%,\;MgO\;0.68\~2.90\;wt.\%,\;Na_2O\;0.48\~2.34\;wt.\%,\;CaO\;0.42\~6.72\;wt.\%,\;TiO_2\;0.53\~l.32\;wt.\%,\;P_2O_5\;0.06~0.51\;wt.\%\;and\;MnO\;0.05\~0.69\;wt.\%.$이다. 하상퇴적물과 암석에 대한 AMF 삼각도에서, 암석은 칼크-알칼리계열에 도시되는데 비하여, 하상퇴적물은 솔레아이트 계열과 칼크-알칼리계열의 경계부위에 도시된다. 이는 $Fe_2O_3$ 함량이 암석에서보다 하상퇴적물에 더 많이 함유되어 있는 것과 관련이 있는 것으로 보인다. $SiO_2$에 대한 $K_2O+Na_2O$의 비교그림에서, 하상퇴적물은 암석에서와 같이 subalkaline 계열에 점시된다. 하상퇴적물의 미량성분원소 및 희토류 원소 함량은 $Ba 590\~2170ppm$, Be$1\~2.4$ppm, Cu $13\~179ppm$, Nb $20\~34ppm$, Ni$10\~50ppm$, Pb $17\~30$ppm, Sr $70\~1025$ ppm, V$42\~135$ ppm, Zr$45\~171$ ppm, Li$19\~77$ppm, Co$4.3\~19.3$ppm, Cr$28\~131$ppm, Cs$3.1\~17.6$ ppm, Hf $5\~27.6$ ppm, Rb $388\~202$ ppm, Sb$0.2\~l.2$ ppm, Sc$6.4\~17$ ppm, Zn $47\~389$ ppm, Pa $8.8\~68.8$ ppm, Ce$62\~272$ppm, Eu$1\~2.7$ppm and Yb$0.9\~6$ppm의 범위를 보인다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.120-120
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• 2016

Ti-6Al-4V alloy have been used for dental implant because of its excellent biocompatibility, corrosion resistance, and mechanical properties. However, the integration of such implant in bone was not in good condition to achieve improved osseointergraiton. For solving this problem, calcium phosphate (CaP) has been applied as coating materials on Ti alloy implants for hard tissue applications because its chemical similarity to the inorganic component of human bone, capability of conducting bone formation and strong affinity to the surrounding bone tissue. Various metallic elements, such as strontium (Sr), magnesium (Mg), zinc (Zn), sodium (Na), silicon (Si), silver (Ag), and yttrium (Y) are known to play an important role in the bone formation and also affect bone mineral characteristics, such as crystallinity, degradation behavior, and mechanical properties. Especially, Zn is essential for the growth of the human and Zn coating has a major impact on the improvement of corrosion resistance. Plasma electrolytic oxidation (PEO) is a promising technology to produce porous and firmly adherent inorganic Zn containing $TiO_2(Zn-TiO_2)$coatings on Ti surface, and the a mount of Zn introduced in to the coatings can be optimized by altering the electrolyte composition. In this study, corrosion behavior of Ti-6Al-4V alloy after plasma electrolytic oxidation in solutions containing Ca, P and Zn were studied by scanning electron microscopy (SEM), AC impedance, and potentiodynamic polarization test. A series of $Zn-TiO_2$ coatings are produced on Ti dental implant using PEO, with the substitution degree, respectively, at 0, 5, 10 and 20%. The potentiodynamic polarization and AC impedance tests for corrosion behaviors were carried out in 0.9% NaCl solution at similar body temperature using a potentiostat with a scan rate of 1.67mV/s and potential range from -1500mV to +2000mV. Also, AC impedance was performed at frequencies ranging from 10MHz to 100kHz for corrosion resistance.

• 한국지구과학회:학술대회논문집
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• 한국지구과학회 2005년도 추계학술발표회 논문집
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• pp.136-141
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• 2005

The K Ar ages, whole rock geochemistry and Sr Nd Pb isotopes have been determined for the submarine basalts dredged from the P2 and P3 segments of the Antarctic-Phoenix Ridge (APR), Drake Passage, Antarctica, for better understanding on temporal variation of magma chemistry in association with extinction of seafloor spreading. The fossilized APR is distant from the known hot spots, and consists of older N-MORB prior to extinction of spreading and younger E-MORB after extinction. The older N-MORB (3.5-6.4 Ma) occur in the southeast flank of the P3 segment (PR3) and the younger E-MORB (1.4-3.1 Ma) comprise a huge seamount at the P3 segment (SPR) and a big volcanic edifice at the P2 segment (PR2). The N-type PR3 basalts have higher Mg#, K/Ba, and CaO/Al2O3 and lower Zr/Y, Sr, and Na8.0 with slight enrichment in incompatible elements and almost flat REE patterns. The E-type SPR and PR2 basalts are highly enriched in incompatible elements and LREE. The extinction of spreading occurring at 3.3 Ma seems to have led to a temporal magma oversupply with E-MORB signatures. Geochemical signatures such as Ba/TiO2, Ba/La, and Sm/La suggest heterogeneity of upper mantle and formation of E-MORB by higher contribution of enriched materials to mantle melting, compared to N-MORB environment. E-MORB magmas beneath the APR seem to have been produced by low melting degree (up to 1% or more) at deeper low-temperature regime, where metasomatized veins consisting of pyroxenites have preferentially participated in the melting. The occurrence of E-MORB at the APR is a good example to better understand what kinds of magmatism would occur in association with extinction of spreading.

• 한국결정성장학회지
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• 제9권5호
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• pp.470-474
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• 1999

We have successfully grown <111>-oriented $(La,Sr)(Al,Ta)O_{3}\;(LSAT)$ mixed-perovskite single crystals and <0001>-oriented ${Ca_{8}La_{2}(PO_{4})}_{6}O_2$ (CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they are promising as new substrates for the growth of high quality GaN epitaxial layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.144-150
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• 2008

Recently, there has been growing interest in low loss and low dielectric constant material for LTCC application, as the frequency range for electronic devices increases. This study was designed to evaluate the effect of cordierite filler for low dielectric constant LTCC material. From the previous experiments, two glass compositions of B-Si-Al-Zn-Ba-Ca-O and B-Si-Al-Sr-Ca-O system, were chosen. Each powder of two glass compositions was sintered respectively with commercial cordierite powder in temperature range from $800^{\circ}C\;to\;900^{\circ}C$. Crystalline cordierite and glass peaks were affected only with two factors of composition and sintering temperature among various factors. With the optimized condition of two cordierite/glass compositions, obtained dielectric constant was below 5.5 and quality factor was above 1,000. Closed pore of sintered body was controled by sintering temperature and sintering time. When cordierite/glass composite with ratio of 5.5:4.5 was sintered at $900^{\circ}C$, densification was sufficient with good dielectric characteristics of ${\epsilon}_r<5.1,\;Q{\ge}1,000$. Residual fine closed pores could be reduced with control of sintering temperature and time. 3 point bending strength and chemical durability were evaluated to obtain feasibility for substrate material.

• 한국세라믹학회지
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• 제48권2호
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• pp.127-133
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• 2011

Non-Alkali multicomponent $La_2O_3-Al_2O_3-SiO_2$ glasses has been designed and analyzed on the basis of a mixture design experiment with constraints. Fitted models for thermal expansion coefficient, glass transition temperature, Young's modulus, Shear modulus and density are as follows: ${\alpha}(/^{\circ}C)=8.41{\times}10^{-8}x_1+5.72{\times}10^{-7}x_2+2.13{\times}10^{-7}x_3+1.09{\times}10^{-7}x_4+1.10{\times}10^{-7}x_5+1.15{\times}10^{-7}x_6+2.72{\times}10^{-8}x_7+2.41{\times}10^{-7}x_8-1.08{\times}10^{-8}x_1x_2+4.28{\times}10^{-8}x_3x_7-2.02{\times}10^{-8}x_3x_8-1.60{\times}10^{-8}x_4x_5-2.71{\times}10^{-9}x_4x_8-2.19{\times}10^{-8}x_5x_6-3.89{\times}10^{-8}x_5x_7$ $T_g(^{\circ}C)=7.36x_1+15.35x_2+20.14x_3+8.97x_4+13.85x_5+4.22x_6+28.21x_7-1.44x_8-0.84x_2x_3-0.45x_2x_5-1.64x_2x_7+0.93x_3x_8-1.04x_5x_8-0.48x_6x_8$ $E(GPa)=2.04x_1+14.26x_2-1.22x_3-0.80x_4-2.26x_5-1.67x_6-1.27x_7+3.63x_8-0.24x_1x_2-0.07x_2x_8+0.14x_3x_6-0.68x_3x_8+0.29x_4x_5+1.28x_5x_8$ $G(GPa)=0.35x_1+1.78x_2+1.35x_3+1.87x_4+9.72x_5+29.16x_6-0.99x_7+3.60x_8-0.48x_1x_6-0.50x_2x_5+0.08x_3x_7-0.66x_3x_8+0.94x_5x_8$ ${\rho}(g/cm^3)=0.09x_1+0.51x_2-4.94{\times}10^{-3}x_3-0.03x_4+0.45x_5-0.07x_6-0.10x_7+0.07x_8-9.60{\times}10^{-3}x_1x_2-8.20{\times}10^{-3}x_1x_5+2.17{\times}10^{-3}x_3x_7-0.03x_3x_8+0.05x_5x_8$ The optimal glass composition similar to the thermal expansion coefficient of Si based on these fitted models is $65.53SiO_2{\cdot}25.00Al_2O_3{\cdot}5.00La_2O_3{\cdot}2.07ZrO_2{\cdot}0.70MgO{\cdot}1.70SrO$.

• 한국초전도ㆍ저온공학회논문지
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• 제13권4호
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• pp.22-25
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• 2011

A single-coat $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) film of high critical currents ($I_c$) could be successfully fabricated by optimizing the viscosity of the coating solution in the metal-organic deposition (MOD) process. From a Ba-deficient coating solution (Y: Ba: Cu = 1: 1.5: 3) having the viscosity of 212 $mPa{\cdot}sec$, 0.9 ${\mu}m$-thick single coat YBCO film with the $I_c$ value of 289 A/cm-width ($J_c$ = 3.2 MA/$cm^2$) at 77 K was achievable on the $SrTiO_3$ (STO) substrate, which was superior to that of our previous report for 0.8 ${\mu}m$-thick single coat YBCO film from a stoichiometric coating solution (Y: Ba: Cu = 1: 2: 3) on the $LaAlO_3$ (LAO) substrate. This result might be attributed to denser and more homogeneous microstrcuture in the case of the YBCO film from the Ba-deficient coating solution.

• 자원환경지질
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• 제23권2호
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• pp.245-259
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• 1990

Petrochemical analyses of granitic rocks including trace element, REE and oxygen isotope were carried out to understand petrogenesis of plutonic rocks from the Chungju, Wolaksan and Jecheon granite batholiths, which might be related with tungsten-base metal-fluorite mineralization in the Hwanggangri metallogenic province. Different geochemical characteristics such as major and trace elements were found between Jurassic Daebo granitic rocks (Chungju, Jecheon, Wonju, and Boeun granitic rocks) and Cretaceous Bulgugsa granitic rocks (Wolaksan, Muamsa and Sokrisan granitic rocks). Cretaceous granitoids are characterized by high $SiO_2$and $K_2O$ contents and low $TiO_2$, $Al_2O_3$, MgO and CaO contents. They also have relatively high contents of trace elements(Zn, V, Co, Cr, Sr, and Ba) in comparison with the Jurassic granitoids. (Eu)/($Eu^*$) and $(La/Lu)_{CN}$ ratios of Jurassic plutons vary from 0.78 to 1.13 and from 26.02 to 30.5, respectively, while the ratios of Cretaceous ones range from 0.22 to 0.28 and from 4.42 to 14.2, respectively. The REE patterns of the Cretaceous and Jurassic granitic rocks have quite different Eu anomalies: large negative Eu anomaly in the former, and mild or absent Eu anomaly in the latter. The large Eu negative of Cretaceous granitic rocks are interpreted as a differentiated product of fractional crystallization of granitic magma deduced by Rayleigh fractionation model(Tsusue et al., 1987). Oxygen isotopic compositions of quartz for Daebo and Bulgugsa granitic rocks range from 9.98 to 10.51‰ and from 8.26 to 9.56‰, respectively. The Daebo granitic rocks enriched in $^{18}0$ suggest that the magma be undergone different partial melting processes from the Bulgugsa ones. Of the Bulgugsa granitoids, Wolaksan and Sokrisan mass have different contents of trace elements and ${\delta}\;^{18}0$ values of the silicate minerals, which indicate that they are not from the identical source of magma. Many mineral deposits are distributed in and/or near the Wolaksan and Muamsa granitic rocks, but a few mineral deposits are found in and near the Chungju and Jecheon granite batholiths. It might be depend on geochemisty of the related igneous rocks which have low contents of Ba, Sr, Co, V, Cr, Ni, Zn and high contents of Nb and Y, and on lithology of country rocks such as cabonate and noncarbonate rocks.

• 센서학회지
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• 제22권4호
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• pp.244-248
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• 2013

The discovery of a two-dimensional electron gas (2DEG) in $LaAlO_3$ (LAO)/$SrTiO_3$ (STO) heterostructure has stimulated intense research activity. We suggest a new structure model based on $KNbO_3$ (KNO) material. The KNO thin films were grown on $TiO_2$-terminated STO substrates as a p-type structure ($NbO_2/KO/TiO_2$) to form a two-dimensional hole gas (2DHG). The STO thin films were grown on KNO/$TiO_2$-terminated STO substrates as an n-type structure to form a 2DEG. Oxygen pressure during the deposition of the KNO and STO thin films was changed so as to determine the effect of oxygen vacancies on 2DEGs. Our results showed conducting behavior in the n-type structure and insulating properties in the p-type structure. When both the KNO and STO thin films were deposited on a $TiO_2$-terminated STO substrate at a low oxygen pressure, the conductivity was found to be higher than that at higher oxygen pressures. Furthermore, the heterostructure formed at various oxygen pressures resulted in structures with different current values. An STO/KNO heterostructure was also grown on the STO substrate, without using the buffered oxide etchant (BOE) treatment, so as to confirm the effects of the polar catastrophe mechanism. An STO/KNO heterostructure grown on an STO substrate without BOE treatment did not exhibit conductivity. Therefore, we expect that the mechanics of 2DEGs in the STO/KNO heterostructures are governed by the oxygen vacancy mechanism and the polar catastrophe mechanism.