• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.128-132
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• 1998

2/65/35 PLZT stock solution prepared by Sol-Gel processing was spin-coated on ITO coated glass and annealed by RTA(Rapid Thermal Annealing). The crystal structure of films was reported based on the observation of crystallization process and microstructure of the film fabricated at different fabrication condition. Films were crystallized into rhombohedral structure by annealing at $750^{\circ}C$ for 5 min. As the annealing temperature increased, the size of rosette structure of the films was grown up from $2.4{\mu}m$ to $15{\mu}m$, dielectric constant was increased, coercive field was decreased 33.82 kV/cm, remnant polarization was increased to 39.84 ${\mu}C/cm^2$ and Optical transmittance was decreased.

• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.983-988
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• 1997

We investigated the structural and dielectric properties of PZT(20/80)/PZT(80/20) heterolayered thin films that fabricated by the alkoxide-based Sol-Gel method. PZT(20/80)/PZT(80/20) heterolayered thin films were spin-coated on the Pt/Ti/SiO$_2$/Si substrate with PZT(20/80) film of tetragonal structure and PZT(80/20) film of rhombohedral structure by turns. Each layers were dried to remove the organic materials at 30$0^{\circ}C$ for 30min and sintered at $650^{\circ}C$ for 1hr. This procedure was repeated several times to form PZT(20/80)/PZT(80/20) heterolayered films and thickness of the film obtained by one-times of drying/sintering process was approximately 80-90nm. PZt-1, 3, 5 films with top layer of PZT(20/80) film of tetragonal structure showed fine grain structure and PZT-2, 4, 6 films with top layer of PZT(80/20) film of rhombohedral structure showed the dense grain microstructure without rosette-type. Dielectric constant and dielectric loss of the PZT-6 film were approximaterly 1385 and 3.3% respectively. Increasing the number of coatings remanent polarization was increased and coercive field was decreased and the values of the PZT-6 film were 8.13$\mu$C/cm$^2$and 12.5kV/cm respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.246-246
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• 2011

졸-겔 스핀코팅(sol-gel spin-coating)법을 이용하여 실리콘 기판에 ZnO 박막을 증착하였다. 증착된 졸 용액을 전열처리(pre-heat treatment) 후, 다른 속도로 상온까지 냉각시켰다. ZnO 박막의 특성 분석을 위하여 atomic force microscopy (AFM), X-ray diffraction (XRD), Raman, photoluminescence (PL)을 이용하였다. 전열처리 후 5$^{\circ}C$/min의 속도로 천천히 냉각시킨 ZnO 박막은 산맥구조(mountain chain structure)로 표면이 매우 거친 반면, 빠르게 냉각시킨 ZnO 박막은 매우 매끄러운 표면을 나타내었다. 빠르게 냉각시킨 ZnO 박막의 c-축 배향성(c-axis preferred orientation)이 느리게 냉각시킨 ZnO 박막의 배향성보다 더 우세하게 나타났고, 결정성도 우수하였다. 뿐만 아니라, 빠르게 냉각시킨 ZnO 박막의 광학적 특성이 느리게 냉각시킨 ZnO 박막의 특성보다 우수하게 나타났다. 후열처리(post-heat treatment)에 의해 ZnO 박막의 구조적 및 광학적 특성이 더욱 향상되었다.

• 한국재료학회지
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• 제28권7호
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• pp.411-416
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• 2018

Tungsten oxide($WO_3$) films with uniform surface morphology are fabricated using a spin-coating method for applications of electrochromic(EC) devices. To improve the EC performances of the $WO_3$ films, we control the heating rate of the annealing process to 10, 5, and $1^{\circ}C/min$. Compared to the other samples, the $WO_3$ films fabricated at a heating rate of $5^{\circ}C/min$ shows superior EC performances for transmittance modulation(49.5 %), response speeds(8.3 s in a colored state and 11.2 s in a bleached state), and coloration efficiency($37.3cm^2/C$). This performance improvement is mainly related to formation of a uniform surface morphology with increased particle size without any cracks by an optimized annealing heating rate, which improves the electrical conductivity and electrochemical activity of the $WO_3$ films. Thus, the $WO_3$ films with a uniform surface morphology prepared by the optimized annealing heating rate can be used as a potential candidate for performance improvement of the EC devices.

• Bulletin of the Korean Chemical Society
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• 제16권11호
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• pp.1015-1019
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• 1995

The electronic structures and properties of the neutral and multiply charged C60n ions (n=2+ to 6-) with spin states have been investigated by semi-empirical MNDO calculations. In the ground state, C601- has the lowest total energy and the highest binding energy. The neutral C60 ion is supposed to have a high ionization potential and a high electron affinity. The HOMO and LUMO positions are lower in the cationic C60 than in the anionic C60. The LUMO energy becomes increasingly positive from C601- to C606- and the HOMO energy becomes increasingly negative from C602+ to C60. The HOMO-LUMO gap of the neutral C60 ion is higher than that of the multiply charged C60 ions. From the HOMO-LUMO gap, it seems reasonable to expect that electrons of the multiply charged C60 ions will be more polarizable than those of the neutral C60 ion. The HOMO and LUMO energies increase as the negative charge increases.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.305-309
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• 2002

We have successfully fabricated a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure using Bi$\sub$4-x/La$\sub$x/Ti$_3$O$\sub$12/ (BLT) ferroelectric thin film and SiO$_2$/Nitride/SiO$_2$ (ONO) stacked buffer layers for single transistor type ferroelectric nonvolatile memory applications. BLT films were deposited on 15 nm-thick ONO buffer layer by sol-gel spin-coating. The dielectric constant and the leakage current density of prepared ONO film were measured to be 5.6 and 1.0 x 10$\^$-8/ A/$\textrm{cm}^2$ at 2MV/cm, respectively, It was interesting to note that the crystallographic orientations of BLT thin films were strongly effected by pre-bake temperatures. X-ray diffraction patterns showed that (117) crystallites were mainly detected in the BLT film if pre-baked below 400$^{\circ}C$. Whereas, for the films pre-baked above 500$^{\circ}C$, the crystallites with preferred c-axis orientation were mainly detected. From the C-V measurement of the MFIS capacitor with c-axis oriented BLT films, the memory window of 0.6 V was obtained at a voltage sweep of ${\pm}$8 V, which evidently reflects the ferroelectric memory effect of a BLT/ONO/Si structure.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.80-83
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• 2011

We have fabricated phosphorescent white organic light-emitting devices (WOLEDs) with a spin-coated poly(Nvinylcarbazole) [PVK] host layer. Iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic), tris(2-phenylpyridine)iridium(III) [$Ir(ppy)_3$], and tris(2-phenyl-1-quinoline)iridium(III) [$Ir(phq)_3$], were used as the blue, green, and red guest materials, respectively. The PVK was mixed with FIrpic, $Ir(ppy)_3$, and $Ir(phq)_3$ molecules in a chlorobenzene solution and spin-coated in order to prepare the emission layer; 3-(4-biphenylyl)-4-phenyl-5-(4-tertbutylphenyl)-1,2,4-triazole (TAZ) was used as an electron transport material. The resultant device structure was ITO/PVK:FIrpic:$Ir(ppy)_3:Ir(phq)_3$/TAZ/LiF/Al. The electroluminescence, efficiency, and electrical conduction characteristics of the WOLEDs based on the doped PVK host layer were investigated. The maximum current efficiency of the three wavelength WOLED with the doped PVK host was 19.2 cd/A.

• Journal of Magnetics
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• 제14권1호
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• pp.18-22
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• 2009

The shape anisotropy effect of a giant magnetoresistance-spin valves (GMR-SV) device with a glass/NiO/NiFe/CoFe/Cu/CoFe/NiFe layered structure for use in the detection of magnetic property of molecules within a cell was investigated. The patterned device was given uniaxial anisotropy during the sputtering deposition and vacuum post-annealing, which was performed at $200^{\circ}C$ under a 300 Oe magnetic field. The pattern size of the device, which was prepared through the photolithography process, was $2{\times}15\;{\mu}m^2$. The experimental results confirmed that the best design for a GMR-SV device to be used as a biosensor is to have both the axis sensing current and the easy axis of the pinned NiO/NiFe/CoFe triple layer oriented in the direction of the device's width, while the easy axis of the free CoFe/NiFe bilayer should be pointed along the long axis of the device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.135-135
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• 2010

In Mn-Ge equilibrium phase diagram, many Mn-Ge intermetallic phases can be formed with difference structures and magnetic properties. The MnGe has the cubic structure and antiferromagnetic(AFM) with Neel temperature of 197 K. The calculation predicted that the $MnGe_2$ with $Al_2Cu$-type is hard to separate between the paramagnetic(PM) states and the AFM states because this compound displays PM and AFM configuration swith similar energy. Mn-doped Ge showed the FM with Currie temperature of 285 K for bulk samples and 116 K for thin films. In addition, the $Mn_5Ge_3$ compound has hexagonal structure and FM with Curie temperature around 296K. The $Mn_{11}Ge_8$ compound has the orthorhombic structure and Tc is low at 274 K and spin flopping transition is near to 140 K. While the bulk $Mn_3Ge_2$ exhibited tetragonal structure ($a=5.745{\AA}$;$c=13.89{\AA}$) with the FM near to 300K and AFM below 150K. However, amorphous $Mn_3Ge_2$ ($a-Mn_3Ge_2$) was reported to show spin glass behavior with spin-glass transition temperature (Tg) of 53 K. In addition, the transition of crystalline $Mn_3Ge_2$ shifts under high pressure. At the atmospheric pressure, $Mn_3Ge_2$ undergoes the magnetic phase transition from AFM to FM at 158 K. The pressure dependence of the phase transition in $Mn_3Ge_2$ has been determined up to 1 GPa. The transition was found to occur at 1 GPa and 155 K with dT/dP=-0.3K/0.1 GPa. Here report that Ferromagnetic $Mn_3Ge_2$ thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. Our result revealed that the substrate facilitates to modify magnetic and electrical properties due to tensile/compressive strain effect. The spin-flopping transition around 145 K remained for samples grown on GaSb(001) while it completely disappeared for samples grown on GaAs(001). The antiferromagnetism below 145K changed to ferromagnetism and remained upto 327K. The saturation magnetization was found to be 1.32 and $0.23\;{\mu}B/Mn$ at 5 K for samples grown on GaAs(001) and GaSb(001), respectively.

• 한국자기학회지
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• 제14권5호
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• pp.169-173
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• 2004

$\alpha$-F $e_2$ $O_3$, 나노 입자를 균일한 크기로 제조하여 Morin 전이 온도( $T_{M}$)를 전 후로 스핀의 변화에 관하여 연구하였다. X-선 회절 분석과 입도분포 측정을 통하여 입자는 80nm정도의 매우 군일한 크기 분포를 하고 있음을 확인하였다. Mossbauer 분광기를 통하여 4.2K에서부터 실내온도까지 여러 온도 범위에 걸쳐 측정한 결과 입자의 크기에 따라 $T_{M}$온도가 변화되었고 스핀의 상태 역시 달라졌다. $T_{M}$은 $b_{ulk}$상태에서 265 K의 값을 가지고 있으나 입자의 크기가 작아질수록 낮아지고, 임계 크기 이하에서는 전이가 전혀 일어나지 않는다. 80nm크기의 입자에서, 스핀의 방향은 $T_{M}$ 이상의 온도에서는 정상적으로 hexagonal구조의 c축에 90$^{\circ}$ 이루고 있으나 $T_{M}$ 이하의 온도에서는 c 축에 나란하지 않고 일정한 각(28$^{\circ}$～29$^{\circ}$)을 유지하는데, 이 방향은 rhombohedral구조의 [110]에 해당하는 것으로 지금까지 알려진 0$^{\circ}$와 90$^{\circ}$사이의 스핀 전이와는 다른 모습을 보여주고 있다.