• Current Photovoltaic Research
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• v.8 no.1
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• pp.33-38
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• 2020

Single-phased SnS thin films have been prepared by RF magnetron sputtering at various deposition pressures. The effect of deposition pressure on the structural and optical properties of polycrystalline SnS thin films was studied using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometer. The XRD analysis revealed the orthorhombic structure of the SnS thin films oriented along the (111) plane direction. As the deposition pressure was increased from 5 mTorr to 15 mTorr, the intensity of the peak on the (111) plane increased, and the intensity decreased under the condition of 20 mTorr. The binding energy difference at the Sn 3d_5/2 and S 2p_3/2 core levels was about 324.5 eV, indicating that the SnS thin film was prepared as a pure Sn-S phase. The optical properties of the SnS thin films indicate the presence of direct allowed transitions with corresponding energy band gap in the rang 1.47-1.57 eV.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.636-641
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• 2000

The effects of Fe and V content on the characteristics of $\beta$ to $\alpha$ phase transformation for Zr-0.8Sn alloys were studied by optical and transmission electron microscopy. With increasing V content, $\beta{\rightarrow}\alpha+\beta$ transformation temperature decreased, thus allowing the width of $\alpha$-lath to be fine air-cooled Zr-0.8Sn-xV alloys. The width of $\alpha$-lath, however, was slightly increased with Fe content. While the $\beta$ to $\alpha$ transformed microstructures of water-quenched Zr-0.8Sn, Zr-0.8Sn-0.1Fe, Zr-0.8Sn-0.2Fe, Zr-0.8Sn-0.4Fe, Zr-0.8Sn-0.1V and Zr-0.8Sn-0.2V were mainly slipped martensite, that of water-quenched Zr-0.8Sn-0.4V was predominantly twinned martensite. The transition of slipped martensite to twinned martensite in Zr-0.8Sn-Xv was thought to be due to the decrease of $M_S$ temperature.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.716-722
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• 1996

Effect of Film thickness on the sensing behavior of thin-film-type ags sensor has been analyzed by deriving an equation form a simple model, and the equation was applied to the sensing behavior of ${SnO}_{2}$ and CuO-${SnO}_{2}$ thin-film sensors. It was revealed, from the equation,that the gas sensing property was closely related to gas diffusivity into the film which was a function of film thickness, reactivity of the gas detected with sensing material, operating temperature, etc. The equation derived was well consistent with the experimental results from ${SnO}_{2}$ and CuO-${SnO}_{2}$ thin-film sensors and explained their different ${H}_{2}S$ sensing behaviors. Finally, a medel was suggested, explainning the effect of gas diffusivity on sensing be havior of oxide semiconductor sensor.

• Journal of the Korean Ceramic Society
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• v.49 no.2
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• pp.155-160
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• 2012

This paper reported a simple deposition-precipitation method, introducing the metal (Ni, Ag and Sn) and $Na_2S{\cdot}5H_2O$ to preparedispersion metal sulfide nanoparticles on the surface of the Multi-walled carbon nanotube for synthesis of CNT-$M_xS_y$ ($NiS_2$, $Ag_2S$, SnS) composite photocatalysts. The characterization of the prepared CNT-$M_xS_y$ ($NiS_2$, $Ag_2S$, SnS) composites was performed by X-ray diffraction, scanning electron microscopy with energy dispersive X-ray analysis and BET analysis. Furthermore, the MB degradation rate constant for CNT-SnS composite was $5.68{\times}10^{-3}$ under visible light irradiation, which was much higher than the corresponding values for other samples. The detailed formation and photocatalytic mechanism are also provided here.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.82-89
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• 2013

$Cu_2ZnSnS_4$ thin film have been fabricated by rapid thermal annealing of dc-sputtered metal precursor with Cu/ZnSn/Cu stack in sulfur ambient. A CZTS film with a good uniformity was formed at $560^{\circ}C$ in 6 min. $Cu_2SnS_3$ and $Cu_3SnS_4$ secondary phases were present at $540^{\circ}C$ and a trace amount of $Cu_2SnS_3$ secondary phase was present at $560^{\circ}C$. Single-phase large-grained CZTS film with rough surface was formed at $560^{\circ}C$. Solar cell with best efficiency of 4.7% ($V_{oc}=632mV$, $j_{sc}=15.8mA/cm^2$, FF = 47.13%) for an area of $0.44cm^2$ was obtained for the CZTS absorber grown at $560^{\circ}C$ for 6 min. The existence of second phase at lower-temperature annealing and rough surface at higher-temperature annealing caused the degradation of cell performance. Also poor back contact by void formation deteriorated cell performance. The fill factor was below 0.5; it should be increased by minimizing voids at the CZTS/Mo interface. Our results suggest that CZTS absorbers can be grown by rapid thermal annealing of metallic precursors in sulfur ambient for short process times ranging in minutes.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.91-97
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• 2014

With Pb-free solder joints containing Sn-Ag-Cu-based ternary alloys (Sn-1.0 wt.%Ag-0.5Cu and Sn-4.0Ag-0.5Cu) and Sn-Ag-Cu-In-based quaternary alloys (Sn-1.0Ag-0.5Cu-1.0In, Sn-1.2Ag-0.5Cu-0.4In, Sn-1.2Ag-0.5Cu-0.6In, and Sn-1.2Ag-0.7Cu-0.4In), fracture-mode change, shear strengths, and fracture energies were observed and measured under a high-speed shear test of 500 mm/s. The samples in each composition were prepared with as-reflowed ones or solid-aged ones at $125^{\circ}C$ to 500 h. As a result, it was observed that ductile or quasi-ductile fracture modes occurs in the most of Sn-Ag-Cu-In samples. The happening frequency of a quasi-ductile fracture mode showed that the Sn-Ag-Cu-In joints possessed ductile fracture properties more than that of Sn-3.0Ag-0.5Cu in the high-speed shear condition. Moreover, the Sn-Ag-Cu-In joints presented averagely fracture energies similar to those of Sn-Ag-Cu joints. While maximum values in the fracture energies were measured after the solid aging for 100 h, clear decreases in the fracture energies were observed after the solid aging for 500 h. This result indicated that reliability degradation of the Sn-Ag-Cu-In solder joints might accelerate from about that time.

• 한국만화애니메이션학회:학술대회논문집
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• 2011.05a
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• pp.23-30
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• 2011

지금, 세계는 바야흐로 'Social Network Service(이하 SNS)의 시대' 이다. SNS란 '일련의 관계에 의해 모인 사람들 간의 관계망을 특정 체계를 통해 대중에게 제공하는 것' 이라고 할 수 있다. 과거 향우회, 동문회처럼 오프라인에서 존재했던 이러한 관계망이 온라인으로 도입된 것이 현재 SNS라고 일컫는 서비스이다. SNS가 큰 인기를 끌고 정보 사회가 발전함에 따라 SNS의 서비스와 형태도 점차 다양해져 왔다. 특히나 그림 영상 등의 시각적인 요소를 사용한 의사소통과 정보의 공유가 과거 그 어떤 매체보다도 손쉽고 빠르게 이루어지고 있다. 인간의 거의 모든 문화 사회적 활동에 컴퓨터가 기반이 됨으로써, 우리는 점차 텍스트, 사진, 영화, 음악, 가상환경 등과 같은 문화 데이터와 더욱 밀접한 관계에 놓이게 되었으며 이것은 SNS에서도 예외가 아니다. 우리는 더 이상 컴퓨터를 마주하는 것이 아니라 디지털 형식으로 기호화된 문화와 마주하고 있으며, 그 중심에는 시각적인 요소들, 즉 '이미지'가 있다. 이러한 점에 착안하여 본 연구는 'SNS'와 그 이미지들의 특성에 대한 이해를 선행한 뒤, 최근 국내에서 가장 활발한 성장세를 나타내고 있는 SNS인 미투데이 페이스북 이상의 두 서비스의 사례를 분석할 것이다. SNS의 이미지의 정체성, 이미지 표현의 특징과 양상이 어떠한지를 분석하고 SNS에서 사용되는 이미지와 그 의미를 보다 심층적인 관점에서 이해해 보는 것은 SNS를 중심으로 형성되어 있는 관련 업계와 학계에 유의미한 내용을 제공할 것으로 기대된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.956-960
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• 2010

CuO doped $WO_3-SnO_2$ thick film gas sensors were fabricated by screen printing method on alumina substrates and heat-treated at $350^{\circ}C$ in air. The effects of mixing ratio of $WO_3$ with $SnO_2$ on the structural and morphological properties of $WO_3-SnO_2$ were investigated X-ray diffraction and Scanning Electron Microscope. The structural properties of the $WO_3-SnO_2$:CuO thick film by XRD showed that the monoclinic of $WO_3$ and the tetragonal of $SnO_2$ phase were mixed. Nano CuO was coated on the $WO_3-SnO_2$ surface and then the surface of $WO_3$ was coated with $SnO_2$ particles with $1\sim1.5{\mu}m$ in diameters, as confirmed form the SEM image. The sensitivity of the $WO_3-SnO_2$:CuO sensor to 2000 ppm $CO_2$ gas and 50 ppm $H_2S$ gas for the various ratio of $WO_3$ and $SnO_2$ was investigated. The 4 wt% CuO doped $WO_3-SnO_2$(75:25) tkick films showed the highest sensitivity to $CO_2$ gas and $H_2S$ gas.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.198-198
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• 2010

산화물 반도체는 넓은 밴드갭을 가지고 있어 가시광에서 투명하며 높은 이동도로 디스플레이 구동 회로 집적에 유리하다. 또한 가격 및 공정 측면에서도 기존의 Si 기판 소자에 비해 여러 장점을 가지고 있어 차세대 디스플레이의 핵심 기술로 산화물반도체에 대한 관심이 높아지고 있다. 본 연구는 RF 동시 스퍼터링법을 이용하여 Zn-Sn-O 박막을 제조하고, 그 전기적, 광학적, 구조적 특성에 대해 조사하였다. 일정한 증착 온도($100^{\circ}C$)에서 ZnO와 $SnO_2$ 타켓의 인가 파워를 조절하여 Sn/(Zn+Sn) 성분비가 약 40~85%인 Zn-Sn-O 박막을 제조하였다. Sn 함량이 증가할수록 박막의 비저항은 약 $2{\times}10^{-1}$ (Sn 45%)에서 약 $2\;{\times}\;10^{-2}\;{\Omega}{\cdot}cm$ (Sn 67%)까지 감소하다가 다시 증가하는 경향을 보였다. 이 때 캐리어 농도는 $3\;{\times}\;10^{18}$에서 $4\;{\times}\;10^{19}\;cm^{-3}$으로 증가하였으며, 이동도는 11에서 $8\;cm^2/V{\cdot}s$로 약간 감소하였다. XRD분석결과, 제조된 모든 Zn-Sn-O 박막은 비정질 구조를 가짐을 확인하였다. 투과율은 박막 내 Sn함량 증가에 따라 감소하나 모든 시편이 약 70%이상의 투과도를 나타내었다. Zn-Sn-O 박막의 Ga 도핑 영향을 확인하기 위해 ZnO 타켓 대신 갈륨이 5.7 wt.% 도핑된 GZO 타켓을 사용하여 동일한 공정조건에서 박막을 제조하였다. Ga이 첨가된 Zn-Sn-O 박막은 구조적 특성과 광학적 특성에서는 큰 차이를 보이지 않았으나, 전기적 특성의 뚜렷한 변화가 관찰되었다. Sn 함량이 45%인 Zn-Sn-O 박막의 경우, 캐리어 농도가 $3.1\;{\times}\;10^{18}$에서 Ga 도핑 효과로 인해 $1.7\;{\times}\;10^{17}\;cm^{-3}$으로 크게 감소하고 이동도는 11에서 $20\;cm^2/V{\cdot}s$로 증가하였다. 따라서 본 연구는 Zn-Sn-O 비정질 박막에 Ga을 도핑함으로써 산화물 반도체재료로서 요구되는 물성을 만족시킬 수 있다는 가능성을 제시하였다.