• Title/Summary/Keyword: $SnO_2-Sb$

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Effects of Additives on the DMMP Sensing Behavior of SnO2 Nanoparticles Synthesized by Hydrothermal Method

  • Kim, Hong-Chan;Hong, Seong-Hyeon;Kim, Sun-Jung;Lee, Jong-Heun
    • Journal of Sensor Science and Technology
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    • v.20 no.5
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    • pp.294-299
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    • 2011
  • $SnO_2$ nanoparticles were synthesized by a hydrothermal method and gas sensors were fabricated using nanoparticles to detect dimethyl methylphosphonate(DMMP) gas. The prepared $SnO_2$ nanoparticles exhibited a high response(72 at $500^{\circ}C$) to 5 ppm DMMP gas compared to commercial $SnO_2$ nanopowders, but their recovery was relatively poor. Various metals(Ni, Sb, Nb) were added to the $SnO_2$ nanoparticles to improve their recovery properties. The focus of this study was to investigate the effects of metal oxide additives on DMMP sensing behavior in $SnO_2$ nanoparticles.

Synthesis and Characterization of Derivatives of Dibutyl Sn(IV)-Ti(IV)-μ-Oxoisopropoxide with Schiff Bases

  • Kumar, Rajesh;Sharma, H.K.
    • Journal of the Korean Chemical Society
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    • v.56 no.1
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    • pp.54-57
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    • 2012
  • New Schiff base derivatives of organoheterobimetallic-${\mu}$-oxoisopropoxide $[Bu_2SnO_2Ti_2(OPr^i)_6]$ have been synthesized by the thermal condensation ${\mu}$-oxoisopropoxide compound with Schiff bases in different molar ratios (1:1-1:4) yielded the compounds of the type $[Bu_2SnO_2Ti_2(OPr^i)_{6-n}(SB)_n]$ (where n is 1-4 and SB=Schiff base anion) respectively. The ${\mu}$-oxoisopropoxide derivatives have been characterized by elemental, spectral analysis (IR, $^1H$, $^{13}C$, $^{119}Sn$ NMR) and molecular weight measurement The studies reveal that the derivative compounds show monomeric nature. Further these are found less susceptible to hydrolysis as compared to parent compound and may prove excellent precursors for the mixed metal oxides.

Effect of ($\textrm{B}_{2}\textrm{O}_{3}$.$\textrm{Li}_{2}\textrm{O}$) on the Microwave Dielectric Properties of the ($\textrm{Zr}_{0.8}\textrm{Sn}_{0.2}$)$\textrm{TiO}_{4}$ Ceramics (($\textrm{Zr}_{0.8}\textrm{Sn}_{0.2}$)$\textrm{TiO}_{4}$ 세라믹스의 마이크로파 유전특성에 미치는 ($\textrm{B}_{2}\textrm{O}_{3}$.$\textrm{Li}_{2}\textrm{O}$)의 영향)

  • An, Il-Seok;Yun, Gi-Hyeon;Kim, Eung-Su
    • Korean Journal of Materials Research
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    • v.9 no.10
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    • pp.1041-1046
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    • 1999
  • (Zr(sub)0.8Sn(sub)0.2)$TiO_4$세라믹스와 소결조제로서 ($B_2$$O_3$.Li$_2$O)의 첨가에 따른 마이크로파 유전특성 및 미세구조에 미치는 영향에 대하여 연구하였다. 1.0 mol.% $Sb_2$O(sub)5를 첨가하고 130$0^{\circ}C$에서 5시간 소결한 (Zr(sub)0.8Sn(sub)0.2)$TiO_4$세라믹스의 경우 ($B_2$$O_3$.Li$_2$O)첨가량 증가에 따라 치밀화 및 결정립 성장에 의해 유전상수와 Q.f값은 증가하여 첨가량이 0.35wt.%에서 최대값인 38과 59,000을 각각 나타내었으며, 0.50wt.% 이상 첨가한 경우에서는 제 2상의 생성으로 인하여 감소하였다. 1.0 mol% Sb$_2$O(sub)5와 0.35wt.% ($B_2$$O_3$.$Li_2$O)를 첨가한 (Zr(sub)0.8Sn(sub)0.2)TiO$_4$세라믹스를 125$0^{\circ}C$와 135$0^{\circ}C$에서 5시간 소결한 경우에는 각각 미반응 TiO$_2$의 존재와 과대입자성장에 의한 결정립내기공의 생성으로 인하여 마이크로파 유전특성은 저하되었다.

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Electrical and Optical Properties of Sb-Doped SnO2 Transparent Conductive Films Fabricated by Using Electrospinning (전기방사법을 이용하여 제조된 Sb-Doped SnO2 투명전도막의 전기적 및 광학적 특성)

  • An, Ha-Rim;Koo, Bon-Ryul;Ahn, Hyo-Jin;Lee, Tae-Kum
    • Korean Journal of Materials Research
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    • v.25 no.4
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    • pp.177-182
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    • 2015
  • Sb-doped $SnO_2$(ATO) thin films were prepared using electrospinning. To investigate the optimum properties of the electrospun ATO thin films, the deposition numbers of the ATO nanofibers(NFs) were controlled to levels of 1, 2, 4, and 6. Together with the different levels of deposition number, the structural, chemical, morphological, electrical, and optical properties of the nanofibers were investigated. As the deposition number of the ATO NFs increased, the thickness of the ATO thin films increased and the film surfaces were gradually densified, which affected the electrical properties of the ATO thin films. 6 levels of the ATO thin film exhibited superior electrical properties due to the improved carrier concentration and Hall mobility resulting from the increased thickness and surface densification. Also, the thickness of the samples had an effect on the optical properties of the ATO thin films. The ATO thin films with 6 deposited levels displayed the lowest transmittance and highest haze. Therefore, the figure of merit(FOM) considering the electrical and optical properties showed the best value for ATO thin films with 4 deposited levels.

Element Dispersion by the Wallrock Alteration of Janggun Lead-Zinc-Silver Deposit (장군 연-아연-은 광상의 모암변질에 따른 원소분산)

  • Yoo, Bong Chul
    • Economic and Environmental Geology
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    • v.45 no.6
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    • pp.623-641
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    • 2012
  • The Janggun lead-zinc-silver deposit is hydrothermal-metasomatic deposit. We have sampled wallrock, hydrother-maly-altered rock and lead-zinc-silver ore vein to study the element dispersion during wallrock alteration. The hydrothermal alteration that is remarkably recognized at this deposit consists of rhodochrositization and dolomitization. Wallrock is dolomite and limestone that consisit of calcite, dolomite, quartz, phlogopite and biotite. Rhodochrosite zone occurs near lead-zinc-silver ore vein and include mainly rhodochrosite with amounts of calcite, dolomite, kutnahorite, arsenopyrite, pyrite, chalcopyrite, sphalerite, galena and stannite. Dolomite zone occurs far from lead-zinc-silver ore vein and is composed of mainly dolomite and minor calcite, rhodochrosite, pyrite, sphalerite, chalcopyrite, galena and stannite. The correlation coefficients among major, trace and rare earth elements during wallrock alteration show high positive correlations(dolomite and limestone = $Fe_2O_3(T)$/MnO, Ga/MnO and Rb/MnO), high negative correlations(dolomite = MgO/MnO, CaO/MnO, $CO_2$/MnO, Sr/MnO; limestone = CaO/MnO, Sr/MnO). Remarkable gain elements during wallrock alteration are $Fe_2O_3(T)$, MnO, As, Au, Cd, Cu, Ga, Pb, Rb, Sb, Sc, Sn and Zn. Remarkable loss elements are CaO, $CO_2$, MgO and Sr. Therefore, elements(CaO, $CO_2$, $Fe_2O_3(T)$, MgO, MnO, Ga, Pb, Rb, Sb, Sn, Sr and Zn) represent a potential tools for exploration in hydrothermal-metasomatic lead-zinc-silver deposits.

Electrical and Optical Properties of Solution-Based Sb-Doped SnO2 Transparent Conductive Oxides Using Low-Temperature Process (저온 공정을 이용한 용액 기반 Sb-doped SnO2 투명 전도막의 전기적 및 광학적 특성)

  • Koo, Bon-Ryul;Ahn, Hyo-Jin
    • Korean Journal of Materials Research
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    • v.24 no.3
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    • pp.145-151
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    • 2014
  • Solution-based Sb-doped $SnO_2$ (ATO) transparent conductive oxides using a low-temperature process were fabricated by an electrospray technique followed by spin coating. We demonstrated their structural, chemical, morphological, electrical, and optical properties by means of X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, atomic force microscopy, Hall effect measurement system, and UV-Vis spectrophotometry. In order to investigate optimum electrical and optical properties at low-temperature annealing, we systemically coated two layer, four layer, and six layers of ATO sol-solution using spin-coating on the electrosprayed ATO thin films. The resistivity and optical transmittance of the ATO thin films decreased as the thickness of ATO sol-layer increased. Then, the ATO thin films with two sol-layers exhibited superb figure of merit compared to the other samples. The performance improvement in a low temperature process ($300^{\circ}C$) can be explained by the effect of enhanced carrier concentration due to the improved densification of the ATO thin films causing the optimum sol-layer coating. Therefore, the solution-based ATO thin films prepared at $300^{\circ}C$C exhibited the superb electrical (${\sim}7.25{\times}10^{-3}{\Omega}{\cdot}cm$) and optical transmittance (~83.1 %) performances.

A Study on the P.T.C.R-N.T.C.R. Ceramic Resister (P.T.C.R.-N.T.C.R. 자기를 이용한 저항체에 관한 연구)

  • 안영필;이병하;김일기
    • Journal of the Korean Ceramic Society
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    • v.18 no.2
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    • pp.119-125
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    • 1981
  • The thermostable resistor was made by using P.T.C.R-N.T.C.R. ceramics. In this study $BaTiO_3$ type P.T.C.R. ceramics and $SnO_2-Sb_2O_3$ type N.T.C.R. ceramics were cocrystallized in one body and electrical resistance was stable under the temperature variation between $25^{\circ}C$-40$0^{\circ}C$. The ceramics showed the most stable electrical resistance for the mal variation when the composition was 0.6P.T.C.R. $BaTiO_3$,$ 0.4SnO_2$ and 0.01 $Sb_2O_3$.

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Effects of Sb doping on the Characteristis of $SnO_2$ Transparent Electrodes ($SnO_2$ 수용전극특성에 미치는 Sb첨가의 영향)

  • 이정한
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.13 no.3
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    • pp.16-21
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    • 1976
  • Transparent eloctroaes of polycrystalline till-oxide films doped with antimony are prepared on the substrate of microscopic cover g1ass by modified spray method and from SnCl4 Solution. Their electrical and optical properties are investigated in relation to the surface temperature of the substrate glass and to antimony concentration in the starting materials. The sheet.resiststrace of the film electrodes and transmittance for incandescent light depen on tile antimony concentration and surface temperature of substrates at the time of making films. The transmittance increases with decrease of sheet resistance of the film. The optimum sheet.resistance was obtianed in the case of the antimony concentration 0.6(%) approximately , and the max. transmittance was 93(%).

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Electrical properties of 0.05pb($Sn_{0.5}Sb_{0.5}O_3-xPbTiO_3-yPbZrO_3$ PZT System With variation Of PT/PZ (0.05pb($Sn_{0.5}Sb_{0.5}O_3-xPbTiO_3-yPbZrO_3$계에서 PT/PZ비 변화에 따른 전기적 특성)

  • 황학인;박준식;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.4
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    • pp.589-598
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    • 1997
  • The effects of PT/PZ ratio variations in a modified PZT system on crystal structure and electrical properties were studied. $0.05Pb(Sn_{0.5}Sb_{0.5})O_3+xPbTiO_3+yPbZrO_3$+0.4Wt% $MnO_2$(=0.55PSS+0.11PT+0.84PZ+0.4wt%$MnO_2$ ; x+y=0.95) systems with variations of PT/PZ from 0.50/0.45 to 0.l1/0.84 were sintered at $1250^{\circ}C$ for 2 hr, and then sintering density, crystal structure, dielctric, piezoelectric, pyroelectic and voltage responsity to infrared were investigated. Sintering density was increased from 7.52g/$\textrm {cm}^3$ to 7.82g/$\textrm {cm}^3$ with increasing PZ content. Dielectric constants at 1 KHz were decreased from 1147 to 193 with variation of PT/PZ from 0.50/0.45 to 0.l1/0.84 after poling of $4 KV_{DC}$/mm at $140^{\circ}C$ for 20 minutes. All Dielectric losses at 1 KHz were less than 1 % in all specimens. $K_{p}$ was increased near to 1 of PT/PZ, and maximun value of 48.2 % was .at 0.45/0.50. Pyroelectric coefficient of PT/PZ with 0.l1/0.84 was maximun value, 0.0541 C/$\m^2$K, and voltage responsity to infrared was 1.5 V.

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Fabrication and Characteristics of High-performance Doped-$SnO_2$ Thin Films for Explosive Gas Sensor

  • Chwa, Sang-Ok;Park, Hee-Chan;Kim, Kwang-Ho
    • The Korean Journal of Ceramics
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    • v.2 no.2
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    • pp.83-88
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    • 1996
  • Long term stability, sensitization in air, and gas sensing behaviors of tin oxide films were investigated with doping of antimony and palladium. The tin oxide films were prepared on a Corning glass by reactive rf sputtering method and tested for detection of hydrogen gas. Sb-doping improved a long-term stability in the base resistance of $SnO_2$ film sensor. A small amount of Pd doping caused the optimum sensor operating temperature to reduce and also enhanced the gas sensitivity, compared with the undoped $SnO_2$ film. Gas sensitivity depended largely on the film thickness. The important sensitization reactions for sensor operating were $(O_{2ads})+e^-\;{\rightarrow}\;2(O_{ads})^-$ on the surface of $SnO_2$ film at elevated temperature in air and a followed reaction of hydrogen atoms with $(O_{ads})^-$ ions.

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