• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.846-850
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• 2003

Thin film $SnO_2$ Gas Sensor was fabricated by using ion beam sputtering and ultra thin film Pt catalyst of $45{\AA}$ was deposited on $SnO_2$ thin film. The effects of annealing temperature on the structural properies of $SnO_2$ were investigated using the X-ray diffraction. Using SEM, microstructures of thin film were investigated. The good gas sensitivity is shown when annealing condition is $650^{\circ}C$, 5hr and ultra thin film Pt catalyst thickness is $45{\AA}$.

• 반도체공학회 논문지
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• 제1권1호
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• pp.9-13
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• 2023

본 연구에서는 SnO₂ 나노입자와 Pd 금속의 이중층으로 구성된 촉매층을 갖는 AlGaN/GaN 이종접합 기반의 상온동작 수소센서를 제작하여 해당 센서의 안정성 개선 연구를 수행하였다. 제작된 센서를 고온 환경이 아닌 상온에서 수소에 노출 및 차단을 반복하며 동작 시켰을 때 시간에 따라 대기전류가 감소하는 불안정한 전류 드리프트 (current drift) 현상이 발생하였지만, 자외선 (UV) 조사를 함께 진행하면서 반복 측정을 하였을 때 해당 불안정성의 가시적인 개선 효과를 이루었다.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.294-299
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• 2000

For practical application as a humidity sensor SnO$_2$thick films devices were fabricated on the refresh type electrode by screen printing method and their material and humidity sensing properties were investigated. As a function of Sb$_{2}$/O$_{3}$ addition rate grain size was increased while porosity and initial resistance were rapidly decreased. And the area of resistance variation according to relative humidity was decreased with increasing heat treatment temperature. SnO$_2$thick film device heat treated at 95$0^{\circ}C$ and contained 0.05mole% Sb$_{2}$/O$_{3}$ had a best humidity sensing properties. From this result it is conformed that humidity sensing properties of SnO$_2$thick film devices could be approved by very small amount of Sb$_{2}$/O$_{3}$ addition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.942-945
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• 2003

Nerve gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas was dimethylmethylphosphonate($C_3H_9O_3P$, DMMP) that is simulant gas of nerve gas. Sensing material was $SnO_2$ added ${\alpha}-Al_2O_3$ with $4{\sim}20wt.%$ and was physically mixed. And then it was deposited by screen printing method on alumina substrate. Sensor device was consisted of sensing electrode with interdigit(IDT) type in front and heater in back side. Total size of device was $7{\times}10{\times}0.6mm^3$. Crystallite size of fabricated $SnO_2$ were characterized by X-ray diffraction(XRD, Rigaku) and morphology of the $SnO_2$ powders was observed by a scanning electron microscope(SEM, Hitachi). Fabricated sensor was measured as flow type and sensor resistance change was monitored real time using LabVIEW program. The best conditions as added $Al_2O_3$ amounts and operating temperature changes were 4wt.% and $300^{\circ}C$ in DMMP 0.5ppm, respectively. The sensitivity was over 75%. Response and recovery times were about 1 and 3 min., respectively. Repetition measurement was very good with ${\pm}3%$ in full scale.

• 센서학회지
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• 제17권5호
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• pp.361-368
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• 2008

Nanosized $SnO_2$ particles were synthesized by homogeneous precipitation method using tin chloride ($SnCl_4{\cdot}5H_{2}O$) and urea ($CO(NH_2)_2$). The powders were heated at $500^{\circ}C$ and $600^{\circ}C$ for 2h. The crystal structure, microstructure, thermal behavior, specific surface area were analyzed using XRD, FE-SEM, TGA and BET, respectively. The initial resistance and the $H_2$ sensing properties were measured as a function of ${Sb_2}{O_3}$ and Pd doping concentrations. The resistance was decreased with the addition of ${Sb_2}{O_3}$ and the sensitivity for $H_2$ gas was increased with the addition of Pd. Thus, the optimum $H_2$ gas sensing property was obtained in the 0.25.mol% ${Sb_2}{O_3}$ and 1.w% added $SnO_2$ powders.

• 전기전자학회논문지
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• 제13권4호
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• pp.37-42
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• 2009

본 연구에서는 졸겔법으로 ZnO, 수열합성법으로 $SnO_2$ 나노분말을 제조하고 이들 나노분말에 Pd, Ru 등의 촉매를 첨가하였다. MEMS 기술로 제작된 히터 및 전극 구조 위에 나노 감지 분말을 도포하여 CO and $NO_2$ 가스 센서를 제작하였다. 0.1 wt% Pd 도핑된 $SnO_2$ 가스센서와 Ru 도핑된 ZnO 가스 센서는 각각 CO 30 ppm, $NO_2$ 1 ppm의 낮은 농도에서도 높은 감지 특성을 보였다.

• 센서학회지
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• 제29권5호
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• pp.328-331
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• 2020

In this study, a highly crystalline SnO₂ thin film was formed using a sol-gel process. In addition, a SnO₂ thin-film transistor was successfully fabricated. The fabricated SnO₂ thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm² V^-1 s^-1, an on/off current ratio of 1.2 × 10⁵, and a subthreshold swing of 2.69. The formed SnO₂ had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10^-6 Jones, gain of 1.43 × 10⁷, detectivity of 2.75 × 10^-6 cm Hz^1/2 W^-1, and photosensitivity of 4.67 × 10².

• 센서학회지
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• 제21권3호
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• pp.167-171
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• 2012

Ag- and Pd-loaded $SnO_2$ nanowire network sensors were prepared by the growth of $SnO_2$ nanowires via thermal evaporation, the coating of slurry containing $SnO_2$ nanowires, and dropping of a droplet containing Ag or Pd nanoparticles, and subsequent heat treatment. All the pristine, Pd-loaded and Ag-loaded $SnO_2$ nanowire networks showed the selective detection of $C_2H_5OH$ with low cross-responses to CO, $H_2$, $C_3H_8$, and $NH_3$. However, the relative gas responses and gas selectivity depended closely on the catalyst loading. The loading of Pd enhanced the responses($R_a/R_g$: $R_a$: resistance in air, $R_g$: resistance in gas) to CO and $H_2$ significantly, while it slightly deteriorated the response to $C_2H_5OH$. In contrast, a 3.1-fold enhancement was observed in the response to 100 ppm $C_2H_5OH$ by loading of Ag onto $SnO_2$ nanowire networks. The role of Ag catalysts in the highly sensitive and selective detection of $C_2H_5OH$ is discussed.

• 센서학회지
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• 제20권5호
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• pp.289-293
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• 2011

Networked $SnO_2$ nanowires were uniformly functionalized with Pd nanoparticles via ${\gamma}$-ray radiolysis. The Networked $SnO_2$ nanowires were fabricated through a selective growth method. The sensing properties of the Pd-functionalized $SnO_2$ nanowires were analyzed in terms of their response to $NO_2$ and CO gases. The response time and sensitivity of the sensors were significantly improved for $NO_2$ at lower temperatures by the Pd functionalization. The enhancement in the sensing properties is likely to be due to the spillover effect of the Pd nanoparticles.

• 센서학회지
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• 제11권3호
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• pp.155-162
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• 2002

CO 기체 감지 특성을 향상시키기 위해서 3 mol% ZnO를 첨가한 $SnO_2$와 3mol% $SnO_2$를 첨가한 ZnO의 적층 형태를 변화시켜 연구하였다. 적층 구조는 단일층, 복층, 그리고 이종층 구조로 후막 인쇄법을 사용하여 제작하였다. $SnO_2$-ZnO계에서 제 2상은 발견되지 않았다. 전도성은 $SnO_2$에 ZnO를 첨가하면 감소하고, ZnO에 $SnO_2$를 첨가하면 증가하였다. 측정 온도증가와 CO 기체 유입으로 전도성은 증가하였다. 단층 및 복층의 후막센서 구조의 감도 향상은 없었으나, $SnO_2$ 3ZnO-ZnO $3SnO_2$/substrate 구조의 이종층 센서의 감도는 향상되었다. 센서 구조에 관계없이 I-V 변화는 모두 직선성을 나타내서 Ohmic 접합 특성을 이루고 있었다.