• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1410-1412
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• 2003

PTC 자기발열기판을 사용해서 저전력 방폭형 CO센서를 제작하고 그 특성을 고찰하였다. CO가스센서의 감지특성을 향상시키기 위하여 Pt가 island 형상을 갖는 다층 Pt/$SnO_2$ 박막구조를 도입하였으며, 이와 같은 구조는 Pt/$SnO_2$ 위에 다시 $SnO_2$ 및 Pt cluster 층들을 연속적으로 증착함으로서 제작되었다. 200ppm의 CO가스농도에서 측정된 다층 $Pt/SnO_2$박막 센서의 감도는 1.72($R_{air}/R_{CO}$)로, 단충 Pt/$SnO_2$ 박막 센서의 최대감도(1.23)보다 훨씬 더 높았다 이것은 Pt와 $SnO_2$사이의 계면적 증대에 기인하는 것으로 생각된다. 제작된 Pt/$SnO_2$ 가스센서의 평균 소비전력은 38.5mW이며, 측정농도범위($30{\sim}1,000ppm$)에서 매우 양호한 감지특성을 나타내었다.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.79-81
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• 2004

$TiO_2-SnO_2$ thin films are fabricated using sol-gel method. The thickness of thin films increase about $0.03{\sim}0.04{\mu}m$ every a dipping. The permittivity and dissipation factor of $TiO_2-SnO_2$ thin films decrease with increasing frequency. Thin films show semiconductive characteristics above $400^{\circ}C$.

• Korean Journal of Materials Research
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• v.24 no.3
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• pp.152-158
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• 2014

We report the effect of the fabric of the surface microstructure on the CO gas sensing properties of $SnO_2$ thin films deposited on self-assembled Au nanodots ($SnO_2$/Au) that were formed on $SiO_2/Si$ substrates. We characterized structural and morphological properties, comparing them to those of $SnO_2$ thin films deposited directly onto $SiO_2/Si$ substrates. We observed a significant enhancement of CO gas sensing properties in the $SnO_2$/Au gas sensors, specifically exhibiting a high maximum response at $200^{\circ}C$ and quite a low detection limit of 1 ppm level in dry air. In particular, the response of the $SnO_2/Au$ gas sensor was found to reach the maximum value of 32.5 at $200^{\circ}C$, which is roughly 27 times higher than the response (~1.2) of the $SnO_2$ gas sensor obtained at the same operating temperature of $200^{\circ}C$. Furthermore, the $SnO_2/Au$ gas sensors displayed very fast response and recovery behaviors. The observed enhancement in the CO gas sensing properties of the $SnO_2/Au$ sensors is mainly ascribed to the formation of a nanostructured morphology in the active $SnO_2$ layer having a high specific surface-reaction area by the insertion of a nanodot form of Au nucleation layer.

• Journal of the Korean institute of surface engineering
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• v.23 no.2
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• pp.18-23
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• 1990

Thin films of tin oxide were prepared by chemical vapor deposition (C.V>D) using the hydrolysis reaction of SnCl4, Deposition rate increased with the increase of temperature up to $500^{\circ}C$and then decreased at $700^{\circ}C$, Deposition rate with SnCl4 partial pressure showed RidealEley behavir. It was found that SnO2 thin film deposited at the temperature above $400^{\circ}C$ had(110) and (301) plane preferred orientation with crystallinity of rutite structure. Electrical resisvity of SnO2 thin film decreased with increase increase of deposition temperature and showed minimum value of 10-3 ohm at $500^{\circ}C$and than largely increased increased with further increase of deposition temperture.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.289-297
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• 2001

Highly-porous $SnO_2$thin films were prepared for recognizing and detecting of the inflammable gases, like butane, propane, LPG, carbon monoxide. To obtain sensing films, Sn, Pt/Sn, Au/Sn, and Pt,Au/Sn films were deposited employing a thermal evaporator for Sn film and a sputter for novel metals of Pt or/and Au. These films were annealed for 2 h at $700^{\circ}C$ to form $SnO_2$-based thin films. The films showed the tetragonal structure and also exhibited many defects and porosity, which could give high sensitivity to thin films. The thin films showed high sensitivity and reproductivity to the tested gases(butane, propane, LPG, and carbon monoxide) to even to low gas concentrations in range of workplace environmental standards. Especially, Pt/$SnO_2$film showed the highest sensitivity to butane, LPG, and carbon monoxide. And pure $SnO_2$ film manifested the highest sensitivity to propane. By using the sensing patterns from the films, we could reliably recognize the kinds and the quantities of the tested inflammable gases within the range of the threshold limit values(TLV) and the lower explosion limit(LEL) through the principal component analysis(PCA).

• Journal of the Korean Ceramic Society
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• v.23 no.3
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• pp.53-61
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• 1986

A gas sensor which has been made by wet process had fabricated by coating each of the mixture on alumina tube and firing at 85$0^{\circ}C$ for 3hrs. A gas concentration such $H_2$, CO, $C_3H_8$, $C_2H_2$ and $CH_4$ vs its detection voltage characteristics has been in-vestigated on $SnO_2-In_2O_3-MgO$ system doped with PdO, $La_2O_3$, $ThO_2$, NiO and $Nb_2O_5$ The optimum sensitivity composition for various gases were 90w/o $SnO_2$-9w/o $In_2O_3$-1w/o MgO for $H_2$, $C_2H_2$ CO and $C_3H_8$ and 95w/o $SnO_2$-4w/o $In_2O_3$-1w/o MgO for $CH_4$. The sample which has been made by wet process than dry process had predominated sensitivity for each gases and particle size of the sample coprecipitated with PH=9 was 0.1${\mu}{\textrm}{m}$ The $SnO_2$-In2_O_3-MgO$ system doped with 2w/o $Nb_2O_5$ and NiO was the most sensitive for $H_2$ and $C_2H_2$ gas. In $SnO_2$-In2_O_3-MgO$ system doped with $ThO_2$ the sensitivity of $H_2$ gas was decreased but CO gas was in-creased when dopant con was increased.

• Journal of Powder Materials
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• v.29 no.5
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• pp.357-362
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• 2022

The low-temperature sinterability of TiO₂-CuO systems was investigated using a solid solution of SnO₂. Sample powders were prepared through conventional ball milling of mixed raw powders. With the SnO₂ content, the compositions of the samples were Ti_1-xSn_xO₂-CuO(2 wt.%) in the range of x ≤ 0.08. Compared with the samples without SnO₂ addition, the densification was enhanced when the samples were sintered at 900℃. The dominant mass transport mechanism seemed to be grain-boundary diffusion during heat treatment at 900℃, where active grain-boundary diffusion was responsible for the improved densification. The rapid grain growth featured by activated sintering was also obstructed with the addition of SnO₂. This suggested that both CuO as an activator and SnO₂ dopant synergistically reduced the sintering temperature of TiO₂.

• Journal of the Korean institute of surface engineering
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• v.40 no.6
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• pp.258-261
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• 2007

Relationships between the electrical resistivity and the growth characteristic of $SnO_2$ thin films were investigated. $SnO_2$ thin films with thickness from 64 nm to 91 nm were made by controlling the RF deposition energy from 80 to 150 W. These $SnO_2$ thin films were annealed at $200^{\circ}C{\sim}700^{\circ}C$ temperature range of $100^{\circ}C$ interval in the $O_2$ gas condition. After annealing treatments, the microstructures of the $SnO_2$ thin films were changed mixed structure(amorphous & crystalline) to lamina columnar crystalline structure. Both the film thickness and the grain size were increased with increasing the local crystallization of $SnO_2$ microstructure of thin films by annealing treatment. Their electrical resistivity increased up to the annealing temperature of $400^{\circ}C$, and then slowly decreased.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.155.2-155
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• 2000

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.27-32
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• 2001

The effect of $V_2O_5$, a donor-type dopant on the degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was compared with Ta$_2$O$_{5}$ doped ($Zr_{0.8}, Sn_{0.2})TiO_4$ in terms of microstructure, electrical conductivity, and oxidation state of the dopant. It is well known that the addition of the donor type species such as $Ta_2O_5,Nb_2O_5, Sb_2O_5, WO_{3}$, increases the quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$due to decrease the oxygen vacancy concentration. Unlike other dopants, however, the addition of $V_2O_5$ decreased the quality factor. The degradation of quality factor of ($Zr_{0.8}, Sn_{0.2})TiO_4$was resulted from the formation of grain boundary phase and $V_2O_5$rich fiber shaped secondary phase, and the increasing the oxygen vacancy concentration due to unstability of oxidation state of vanadium ions in ($Zr_{0.8}, Sn_{0.2})TiO_4$ceramic.c.