• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.161-161
• /
• 2012

질화티타늄(Titanium Nitride, TiN)은 화학적 안정성이 우수하고, N/Ti 원소 비율에 따라 열전도성 및 전기전도성이 변화하는 특성을 가지고 있어서 Metal Insulator Silicon (MIS) 나 Metal Insulator Metal (MIM) capacitor의 metal electrode 물질로 적용되고 있다. $TiCl_4$와 $NH_3$ gas를 이용하여 $500^{\circ}C$ 이상의 고온 조건에서 Chemical Vapor Deposition (CVD) 법으로 TiN 박막을 증착하는 방식이 가장 널리 사용되고 있으나, TiN 박막 내의 Chlorine (Cl) 원소가 SiO2 두께와 누설전류 밀도를 증가시키는 요인으로 작용하므로 Cl의 거동 및 함량 제어를 통한 전기적인 특성의 향상 평가가 요구되고 있다[1-3]. 본 실험에서는 $SiO_2$ 위에 TiN을 적층 한 구조에서 magnetic sector type의 Secondary Ion Mass Spectrometry (SIMS)를 이용하여 Cl 원소의 검출도 개선 방법을 연구하였다. 일반적인 $Cs^+$ 이온을 이용하여 $Cl^-$ 이온을 검출할 경우에는 TiN 하부에 $SiO_2$가 존재함에 따른 charging effect와 mass interference가 발생되는 문제점이 관찰되었다. 이를 개선하기 위해 Cl과 Cs 원소가 결합된 $ClCs^+$ cluster ion을 검출하는 방법을 시도하였으나, Cl- 이온 검출 방식에 비해 오히려 낮은 검출도를 나타내었으나 Cl 원소가 속하는 halogen 족 원소의 높은 전자 친화도 특성을 이용한 $ClCs_2^+$ cluster ion을 검출하는 방법[4]을 적용한 경우에는 $ClCs^+$ 방식에 비해 검출도가 3order 개선되는 결과를 확보하였으며, 이 결과를 토대로 Cl dose ($atoms/cm^2$) 와 Rs (ohm/sq) 간의 상관 관계에 대해 고찰하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.396-396
• /
• 2012

산업 분야에서 TiN, CrN, CrAl-N, TiAl-N과 같은 Hard 코팅들은 기계적 특성이 우수하여 절삭 공구, 기계 부품분야에서 많이 사용되고 있다. 최근 연구 동향을 살펴보면 기존에 하나 또는 두가지 합금상태의 Hard 코팅을 넘어서 제3원소, 제4원소를 첨가하여 미세 구조적 변화를 통해 기존의 우수한 특성에 고온안정성, 내식성, 내산화성 등 다양한 기능성을 부여하는 다기능성 연구가 활발히 진행 중이다. 본 연구에서는 마그네트론 스퍼터를 이용하여 고경도 코팅인 Ti-Al계열에 Si, Cu, Cr, B을 첨가함에 따른 내식특성을 확인해보았다. 성분이 균일한 코팅을 만들기 위해 Ti-Al, Ti-Al-Si, Ti-Al-Cu, Ti-Al-Cr, Ti-Al-B 단일합금타겟을 제조하여 실험을 진행하였다. 기본 물성을 확인하기 위해 경도 측정과 SEM XRD 등을 분석하였다. 내식성 평가는 동전위 테스트와 염수분무 테스트를 진행하였고 전해질은 염수와 동일한 5%-NaCl로 진행하였다. 그 결과 Ti-Al-Cr이 내식성에 강한 것으로 나타났고 염수분무 실험에서도 1200시간 이상 지속되는 성과를 보였다.

• Korean Journal of Materials Research
• /
• v.9 no.11
• /
• pp.1129-1136
• /
• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1996.05a
• /
• pp.55-55
• /
• 1996

• Journal of the Korean Ceramic Society
• /
• v.43 no.6 s.289
• /
• pp.362-368
• /
• 2006

Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$ (BSTO) thin films have been grown on TiN buffered Si (001) substrates by Pulsed Laser Deposition (PLD) method and the effects of substrate temperature and oxygen partial pressure during the deposition on their dielectric properties and crystallinity were investigated. The crystal orientation, epitaxy nature, and microstructure of oxide thin films were investigated using X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). Thin films were prepared with laser fluence of $4.2\;J/cm^2\;and\;3\;J/cm^2$, repetition rate of 8 Hz and 10 Hz, substrate temperatures of $700^{\circ}C$ and ranging from $350^{\circ}C\;to\;700^{\circ}C$ for TiN and oxide respectively. BSTO thin-films were grown on TiN-buffered Si substrates at various oxygen partial pressure ranging from $1{\times}10^{-4}$ torr to $1{\times}10^{-5}$ torr. The TiN buffer layer and BSTO thin films were grown with cube-on-cube epitaxial orientation relationship of $[110](001)_{BSTO}{\parallel}[110](001)_{TiN}{\parallel}[110](001)_{Si}$. The crystallinity of BSTO thin films was improved with increasing substrate temperature. C-axis lattice parameters of BSTO thin films, calculated from XRD ${\theta}-2{\theta}$ scans, decreased from 0.408 m to 0.404 nm and the dielectric constants of BSTO epitaxial thin films increased from 440 to 938 with increasing processing oxygen partial pressure.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.9 no.3
• /
• pp.576-581
• /
• 2005

In this paper. the a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. High k gate dielectric is required for on-current, threshold voltage and breakdown characteristics of TFT Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_3N_4$. Ferroelectric increases on-current and decreases threshold voltage of TFT and also ran improve breakdown characteristics.$SrTiO_4$ thin film is deposited by e-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C\~600^{\circ}C$. Dielectric constant of ferroelectric is about 60-100 and breakdown field is about IMV/cm. In this paper, the TFT using ferroelectric consisted of double layer gate insulator to minimize the leakage current. a-SiN:H, a-Si:H (n-type a-Si:H) are deposited onto $SrTiO_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. In this paper, TFR using ferroelectric has channel length of$8~20{\mu}m$ and channel width of $80~200{\mu}m$. And it shows that drain current is $3.4{\mu}A$at 20 gate voltage, $I_{on}/I_{off}$ is a ratio of $10^5\~10^8,\;and\;V_{th}$ is$4\~5\;volts$, respectively. In the case of TFT without having ferroelectric, it indicates that the drain current is $1.5{\mu}A$ at 20gate voltage and $V_{th}$ is $5\~6$ volts. If properties of the ferroelectric thin film are improved, the performance of TFT using this ferroelectric thin film can be advanced.

• Journal of the Korean Ceramic Society
• /
• v.49 no.4
• /
• pp.333-336
• /
• 2012

The study to give electrical conductivity by dispersing carbon nanotubes (CNT) into silicon nitride ($Si_3N_4$) ceramics has been carried out in recent years. However, the density and the strength of $Si_3N_4$ ceramics were degraded and CNTs disappeared after firing at high temperatures because CNTs prevent $Si_3N_4$ from densification and there is a possibility that CNTs react with $Si_3N_4$ or $SiO_2$. In order to suppress the reaction and the disappearance of CNTs, lower temperature densification is needed. In this study, $HfO_2$ and $TiO_2$ was added to $Si_3N_4-Y_2O_3-Al_2O_3$-AlN system to fabricate CNT-dispersed $Si_3N_4$ ceramics at lower temperatures. $HfO_2$ promotes the densification of $Si_3N_4$ and prevents CNT from disappearance. As a result, the sample by adding $HfO_2$ and $TiO_2$ fired at lower temperatures showed higher electrical conductivity and higher bending strength. It was also shown that the mechanical and electrical properties depended on the quantity of the added CNTs.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.15 no.3
• /
• pp.104-107
• /
• 2005

[ $TiN_x$ ] powder have been fabrication by making of reaction between titanium powder and $Si_3N_4$ bowl during a planetary milling. Milling times were maintained for 1 hour, 5 hours, and 10 hours, respectively. The XRD result showed existence of non-stoichiometric compound of $TiN_{0.26}$ after 5 hours milling and coexistence of TiN with $TiN_{0.26}$ after 10 hours milling. Particle size distribution was investigated by particle size analyzer and microstructure was analyzed by FE-SEM. The size of titanium was decreased with increasing the milling time and the mean size of $TiN_x$ after 10 hours milling was increased by 200 nm.

• Journal of the Korean Ceramic Society
• /
• v.36 no.8
• /
• pp.835-842
• /
• 1999

Si3N4 -Si3N4 joints were made using Ag-Cu-Ti and Ag-Cu-In-Ti via brazing method and the change in joint strength was investigated after heat treatment at $400^{\circ}C$ or $650^{\circ}C$ for up to 2000h. The initial strength of as-brazed joints with Ag-Cu-In-Ti was lower but the reduction of the strength was less dramatic than that with Ag-Cu-Ti. The joints made of a new brazing alloy Au-Ni-Cr-Mo-Fe which is developed for high temperature applications were heat-treated at $650^{\circ}C$ for 1000h. As the heat treatment time increased the bond strength increased. The results of the joining system with Mo or Cu interlayer showed that the strength of the joint with Mo interlayer was higher but the system incurred problems in joint production Also it was found from oxidation experiment that Ti and In affected the oxidation resistance of brazing alloy.

• Journal of the Korean institute of surface engineering
• /
• v.56 no.5
• /
• pp.335-340
• /
• 2023

Quinary component of 3㎛ thick Ti-Al-Si-Cu-N films were deposited onto WC-Co and Si wafer substrates by using an arc ion plating(AIP) system. In this study, the influence of copper(Cu) contents on the mechanical properties and microstructure of the films were investigated. The hardness of the films with 3.1 at.% Cu addition exhibited the hardness value of above 42 GPa due to the microstructural change as well as the solid-solution hardening. The instrumental analyses revealed that the deposited film with Cu content of 3.1 at.% was a nano-composites with nano-sized crystallites (5-7 nm in dia.) and a thin layer of amorphous Si₃N₄ phase.