• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.45-45
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.799-804
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• 1999

Composites of SiC-Si3N4 consisted of uniformly distributed elongated $\beta$-Si3N4 grains and equiaxed $\beta$-SiC grains were fabricated with $\beta$-SiC,. $\alpha$-Si3N4 Al2O3 and Y2O3 powders. By hot-pressing and subsequent annelaing elongated $\beta$-Si3N4 grains were grown via$\alpha$longrightarrow$\beta$ phase transformation and equiaxed $\beta$-Si3N4 composites increased with increasing the Si3N4 content owing to the reduced defect size and enhanced crack deflection by elongated $\beta$-Si3N4 grains and the grain boundary strengthening by nitrogen incorporation. Typical flexural strength and fracture toughness of SiC-40 wt% Si3N4 composites were 783 MPa and 4.2 MPa.m1/2 respectively.

• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.67-73
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• 1986

SiC and $SiC-Si_3N_4$ powder were synthesized via the carbiding and carbiding-nitriding reaction of Jecheon quartz respectively using graphite as a reducing agent. $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ composite was obtained by the carbiding-nitriding reaction of Jecheon quartz-graphite mixture at 1, 35$0^{\circ}C$ in $H_2$ atmosphere. $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ composite was obtained by the carbidint-nitriding reaction of Jecheon quartz-graphite mixture at 1, 35$0^{\circ}C$ in $N_2-H_2$ atmosphere. The ratio of $\beta$-SiC+($\alpha$+$\beta$)-$Si_3N_4$ content in a produced composite could be controlled by adjusting the reaction time and gaseous mixture.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.280-287
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• 2000

Adsorption behavior and amount of phenolic resin followed silica (SiO2) formation onto silicon nitride(Si3N4) surface were investigated using electrokinetic sonic amplitude (ESA) technique and with UV spectrometer, to fabricate Si3N4/SiC nano-composite based on reaction between SiO2 formed and phenolic resin absorbed onto Si3N4 particle. The amount of SiO2 formed and carbon from phenolic resin absorbed onto Si3N4 surface were calculated quantitatively to adjust the reaction between SiO2 and phenolic resin, resulting in no residual SiO2 and carbon. As a result, pre-heated tempeature for optimized reaction was below 25$0^{\circ}C$, in which there was no residual SiO2 and carbon.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.732-736
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• 2006

This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.15-23
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• 2009

Saturation-coverage silyl, $-SiH_3(a)$, overlayers were prepared from $Si_2H_6$ adsorption on three comparative surfaces: clean unmodified; D-precovered; and atomically roughened Si(100). Together with its precursor-mediated adsorption behavior, the surface reactivity of $Si_2H_6$ was found to be the highest on the unmodified Si(100)-$2{\times}1$ surface. This was correlated with its dissociative adsorption mechanism, in which both the $H_3Si-SiH_3$ bond scission and the dual surface $Si-SiH_3(a)$ bond formation require a surface dangling bond 'pair'. The unusually high thermal stability of $-SiH_3(a)$ on the unmodified surface was ascribed to a nearly close-packed $-SiH_3(a)$ coverage of ${\sim}0.9$ monolayer and the consequent lack of dangling bonds on the silyl-packed surface.

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.188-192
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• 2006

The microstructures and mechanical properties of continuously porous $SiC-Si_3N_4$composites fabricated by multi-pass extrusion were investigated at different Si levels added. Si-powder with different weight percentages (0%, 5%, 10%, 15%, 20%) was added to the SiC powder to make the raw mixture powders, with $6wt%Y_2O_3-2wt%Al_2O_3$ as sintering additives, carbon ($10-15{\mu}m$) as a pore-forming agent, ethylene vinyl acetate as a binder and stearic acid ($CH_3(CH_2)_{16}COOH$) as a lubricant. In the continuously porous $SiC-Si_3N_4$ composites, $Si_3N_4$ whiskers like the hairs of nostrils were frequently observed on the wall of the pores. In this study, the morphology of the $Si_3N_4$ whiskers was investigated with the silicon addition content. In the composites containing of 10 wt% Si, a large number of $Si_3N_4$ whiskers was found at the continuous pore regions. In the sample to which 15 wt% Si powder was added, maximum values of about 101 MPa bending strength and 57.5% relative density were obtained.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.392-398
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• 2014

$Al_2O_3$-SiC composites reinforced with SiC whisker ($SiC_w$) were fabricated using three different methods. In the first, $Al_2O_3-SiC_w$ starting materials were used. In the second, $Al_2O_3-SiC_w$-SiC particles ($SiC_p$) were used, which was intended to enhance the mechanical properties by $SiC_p$ reinforcement. In the third method, reaction-sintering was used with mullite-Al-C-$SiC_w$ starting materials. After hot-pressing at $1750^{\circ}C$ and 30 MPa for 1 h, the composites fabricated using $Al_2O_3-SiC_w$ and $Al_2O_3-SiC_w-SiC_p$ showed strong mechanical properties, by which the effects of reinforcement by $SiC_w$ and $SiC_p$ were confirmed. On the other hand, the mechanical properties of the composite fabricated by reaction-sintering were found to be inferior to those of the other $Al_2O_3$-SiC composites owing to its relatively lower density and the presence of ${\gamma}-Al_2O_3$ and ${\gamma}-Al_{2.67}O_4$. The greatest hardness and $K_{1C}$ were 20.37 GPa for the composite fabricated using $Al_2O_3-SiC_w$, and $4.9MPa{\cdot}m^{1/2}$ using $Al_2O_3-SiC_w-SiC_p$, respectively, which were much improved over those from the monolithic $Al_2O_3$.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.217-221
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• 2002

Si and ${\alpha}-Si_3N_4$ powder mixtures added with 3 wt% $Y_2O_3$ were reacted under 5 MPa nitrogen pressure. The reaction products contained ${\alpha}-Si_3N_4$ particles with elongated shapes. Length and width of the elongated grains were the maximum when the starting powder mixture of 50 wt% Si - 47 wt% ${\alpha}-Si_3N_4$ and 3 wt% $Y_2O_3$ was used. Aspect ratio of the elongated grains were between 4.4 and 5. When the starting powder mixture contained 70 wt% Si, large particles with irregular shapes appeared. Meanwhile, the reaction did not proceed when the starting powder mixture contained 30 wt% Si and less. The SHS product was easy to crush and the elongated particles obtained from the starting powder mixtures of 40 wt% Si - 57 wt% ${\alpha}-Si_3N_4$ - 3 wt% $Y_2O_3$ and 50 wt% Si - 47 wt% ${\alpha}-Si_3N_4$ - 3 wt% $Y_2O_3$ were good candidates for the seeds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.357-358
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• 2007

Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 m poly 3C-SiC grown at 1180 C occurred at 794.4 and $965.7\;cm^{-1}$. Their FWHMs (full width half maximum) were used to investigate the stress and the disorder of 3C-SiC. The broad FWHM can explain that the crystallinity of 3C-SiC grown at 1180 C becomes poly crystalline instead of the disordered crystal. The ratio of intensity $I_{(LO)}/I_{(TO)}$ 1.0 means that the crystal defect of 3C-SiC/$SiO_2$/Si is small. The biaxial stress of poly 3C-SiC was obtained as 428 MPa. In the interface of 3C-SiC/$SiO_2$, the phonon mode of C-O bonding appeared at $1122.6\;cm^{-1}$. The phonon modes related to D and G bands of C-C bonding were measured at 1355.8 and $1596.8\;cm^{-1}$ respectively.