• 동력기계공학회지
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• 제21권2호
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• pp.14-19
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• 2017

The corrosion characteristics of Al-Si-Mg alloy were investigated in $O_2$ and $H_2S/H_2$ environments at high temperature. The weight gain and the reaction rate constant of the Al-Si-Mg alloy were measured in the oxygen and hydrogen sulfide environments at 773K. The weight gain of Al-Si-Mg alloy was showed parabolic increase in the oxygen and hydrogen sulfide environments. The reaction rate constants were confirmed to be $1.45{\times}10^{-4}mg^2cm^{-4}sec^{-2}$ in the oxygen environment and $6.19{\times}10^{-4}mg^2cm^{-4}sec^{-2}$ in the hydrogen sulfide environment respectively. As a result of XPS analysis on the specimen surface, $Al_2O_3$ and MgO compounds were detected in oxygen environment and $Al_2(SO_4)_3$ sulfate was detected in the hydrogen sulfide environment. Corrosion rate of Al-Si-Mg alloy was about 4.3 times faster in hydrogen sulfide environment than oxygen environment.

• 한국세라믹학회지
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• 제43권9호
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• pp.582-587
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• 2006

Decomposition behavior of $ferro-Si_3N_4$was investigated with varying temperature and holding time in mud components for high temperature refractory applications. Porosities gradually increased with increasing temperature and holding time due to the carbothermal reduction of $Si_3N_4\;and\;SiO_2$. Silicon monoxide (SiO) as a intermediate resulted from evaporation of $Si_3N_4\;and\;SiO_2$ reacted with C sources to generate needle-like ${\beta}-SiC$ and Fe in $Si_3N_4$ acted as a catalyst in order to enhance growth of SiC grain with the preferred orientation. SiC generation yield increased with increasing holding time, all of the $Si_3N_4\;and\;SiO_2$ affected on SiC formation up to 2h. However, SiC generation was only dependent on residual $SiO_2$ over 2h, because the carbothermal reduction reaction of $Si_3N_4$ was no longer possible at that time.

• 한국세라믹학회지
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• 제28권2호
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• pp.130-140
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• 1991

The powders of the system Si3N4-Y2O3-AlN were prepared using Si(OC2H5)4 and YCl3.6H2O together with commercial AlN powder. $\alpha$-Si3N4 was prepared by the carbothermal reduction and nitridation of the hydrolyzed gel at 135$0^{\circ}C$ for 10h in N2 atmosphere. YCl3.6H2O was observed to be changed to Y2O3 during the reaction. $\alpha$-Sialon(X=0.2, 0.4, 0.6) ceramics were obtained by hot-pressing the Si3N4-Y2O3-AlN mixture at 178$0^{\circ}C$ for 1h under 30 MPa. The content of $\alpha$-Sialon increased with increasing metal solubility(x value) and $\alpha$-Sialon single phase was obtained at the metal solubility of 0.6. With increasing metal solubility, flexural strength, fracture toughness and thermal shock resistence were decreased, while the microhardness was increased. Large elongated $\beta$-Si3N4 grains were mainly observed at lower metal solubility. Mechanical prorerties of the sintered ceramics with X=0.2 were measured as follows : flexural strength ; 650 MPa, fracture toughness ; 3.63 MN/m3/2, hardness ; 14.7 GPa, thermal shock resistence temperature ; 58$0^{\circ}C$.

• 한국진공학회지
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• 제17권5호
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• pp.426-434
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• 2008

고밀도 유도결합 플라즈마 장치의 $SiH_4/O_2/Ar$방전에 대한 공간 평균 시뮬레이터를 제작하였다. 제작된 시뮬레이터는 $SiH_4/O_2/Ar$ 플라즈마 방전에서 발생되는 전자, 양이온, 음이온, 중성종, 그리고 활성종들에 대해 공간 평균한 유체 방정식을 기반으로 하고 있으며, 전자가열 모델은 anomalous skin effect를 고려한 파워 흡수 모델을 적용하여 전자가 흡수하는 고주파 파워량을 결정하였다. 완성된 시뮬레이터에서 RF-파워와 압력 변화에 대한 하전입자, 중성종, 활성종들의 밀도 변화 및 전자 온도 의존성을 계산하였다.

• 반도체디스플레이기술학회지
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• 제22권2호
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• pp.35-39
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• 2023

Silicon oxide thin films have been deposited by plasma-enhanced chemical vapor deposition in SiH4 and N2O plasma along the variation of the gas flow ratio. Optical emission spectroscopy was employed to monitor the plasma and ellipsometry was employed to obtain refractive index of the deposited thin film. The atomic ratio of Si, O, and N in the film was obtained using XPS depth profiling. Fourier Transform Infrared Spectroscopy was used to analyze structures of the films. RI decreased with the increase in N2O/SiH4 gas flow ratio. We noticed the increase in the Si-O-Si bond angles as the N2O/SiH4 gas flow ratio increased, according to the analysis of the Si-O-Si stretching peak between 950 and 1,150 cm-1 in the wavenumber. We observed a correlation between the optical emission intensity ratio of (ISi+ISiH)/IO. The OES intensity ratio is also related with the measured refractive index and chemical composition ratio of the deposited thin film. Therefore, we report the added value of OES data analysis from the plasma related to the thin film characteristics in the PECVD process.

• 한국세라믹학회지
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• 제40권2호
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• pp.167-171
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• 2003

기계적 방법으로 합성된 CeO$_2$분말을 연마입자로 하여 STI용 CMP 슬러리를 제조하였다. 연마입자는 정전기적 방법과 입체적 방법으로 수계에서 안정화시킬 수 있었으며, 장기 안정성을 위해서는 입체적 방법에 의한 안정화가 유효하였다. 50$0^{\circ}C$와 $700^{\circ}C$에서 합성된 CeO$_2$를 이용하여 CMP 슬러리를 제조하고, SiO$_2$와 Si$_3$N$_4$가 블랭킷 형태로 증착된 웨이퍼를 연마한 결과 연마능률과 선택비는 연마입자의 합성조건과 분산 안정성, 슬러리의 pH 등에 의해 영향을 받았다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권7호
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• pp.293-297
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• 2003

Silicon dioxide (SiO$_2$) layers were fabricated on Si$_3$N$_4$/SiO$_2$/Si layer structures by low pressure chemical vapor deposition (LPCVD). Potassium and aluminum were then coimplanted by implanting potassium ions with the energy of 100 ［keY］ and dose of 5x10$^{16}$ [cm￣$^2$］ and 1x10$^{17}$ [cm￣$^2$］ into an aluminum buffer layer on the SiO$_2$Si$_3$N4/SiO$_2$/Si structure. The pH, pNa, and pK ion sensitivities of the resulting layers were investigated and compared to those of as-deposited silicon dioxide layer. The pK-sensitivity of the silicon dioxide was enhanced by the K and Al coimplantation. On the contrary, the pH and pNa-sensitivities of the coimplanted silicon dioxides were quite lower than that of the as-deposited silicon dioxide.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.91-95
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• 2012

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

• 한국세라믹학회지
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• 제20권1호
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• pp.3-12
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• 1983

In the present study an attempt was made to synthesize the $Al_2O_3$.$2SiO_2$ glass in which atomic ratio is Al:Si=1:1 by sol-gel process. And at such a low temperature as 55$0^{\circ}C$ clear amorphous gel derived glass with Si-O-Al bonding was obtained. $Si(OC_2H_5)_4$ and $Al(NO_3)_3$.$9H_2O$ were used as the precursor and among the mutual solvents only n-butanol gave good results for the synthesis of the gel derived glass. Partial hydrolysis of TEOS with one-fold mol of $H_2O$ prior to the reaction with aluminum nitrate gave the better results., Total oxide content to the total reactants by weight was affective to the results.

• 한국세라믹학회지
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• 제31권8호
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• pp.934-940
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• 1994

Fibers of ZrO2-SiO2 system were prepared from the hydrolysis and condensation of Si(OC2H5)4 and Zr(OnC3H7)4 with different H2O/alkoxide molar ratios. It was found that fibers could be drawn in the viscosity range of 1~100 poise from HCl catalyzed solutions with lower water contents of the mole ratio H2O/alkoxide, r 2. The fibrous gels were converted into the corresponding oxide glass fibers by heating at 80$0^{\circ}C$. Mechanical test was performed on E, A and 20ZrO2-80SiO2 glass fibers reinforced cement in order to investigate the flexural strength. The flexural strength value of 20ZrO2-80SiO2 glass fibers reinforced cement was greater than those of E and A. The chemical durability of the fibers in alkaline solutions increased with ZrO2 content. The weight loss due to the corrosion by 2N-NaOH solutions at $25^{\circ}C$ for 160 hours was about 0.31$\times$10-2 mg/dm2 for the 20ZrO2-80SiO2 glass fibers, which was superior to that of Vycor glass.