• Bulletin of the Korean Chemical Society
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• 제29권12호
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• pp.2325-2326
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• 2008

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.290-294
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• 2001

In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.126-133
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• 1997

In order to apply for the gas sensing layer and the piezoelectric thin film devices, we studied the effects of magnetron sputtering conditions and annealing temperature on the electrical and structual characteristics of the ZnO thin film. The optimal deposition conditions, in order to obtain a c axis of the ZnO (002) phase thin film which is perpendicular to SiO$_{2}$/Si substrate, were like these ; substrate temperature 150.deg. C, chamber pressure 2 mtorr, R.F. power 300 watts, gas flow ratio 0.4[O$_{2}$(Ar + $O_{2}$)]. When the ZnO thin film was annealed in 600.deg. C, $O_{2}$ gas ambient for 1 hr, the resistivity was 2.6 x 10$^{2}$.ohm.cm and the grain size of ZnO thin film was less than 1 .mu.m. So the ZnO thin film acquired from above conditions can apply for the gas sensing layer which require a c axis perpendicular to the substrate surface.

• 한국전기전자재료학회논문지
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• 제20권2호
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• pp.156-161
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• 2007

This paper describes the characteristics of polycrystalline ${\beta}$ or 3C (cubic)-SiC (silicon carbide) thin films heteroepitaxailly grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC film was deposited by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane: $Si_{2}(CH_{3}_{6})$ single precursor. The deposition was performed under various conditions to determine the optimized growth conditions. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_{2}$ were measured by SEM (scanning electron microscope). Finally, depth profiling was invesigated by GDS (glow discharge spectrometer) for component ratios analysis of Si and C according to the grown 3C-SiC film thickness. From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therfore, the poly 3C-SiC thin film is suitable for extreme environment, Bio and RF MEMS applications in conjunction with Si micromaching.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.1024-1027
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• 2005

By using $45^{\circ}$ obliqued evaporation method with electron beam system, uniformly vertical liquid crystal (LC) alignment was achieved. And a high pretilt angles of about $2.5^{\circ}$ were measured. Also, it was verified that there are no variations of pretilt angle as a function of $SiO_x$ thin film thickness 20 nm and 50 nm. A good LC alignment states were observed at annealing temperature of $250^{\circ}C$. Consequently, the high pretilt angle and the good thermal stability of LC alignment by $45^{\circ}$ obliqued electron beam evaporation method on the $SiO_x$ thin film can be achieved.

• 센서학회지
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• 제8권3호
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• pp.274-282
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• 1999

암모니아가스에 민감한 In이 도핑된 ZnO(ZnO:In) 박막을 In 박막($100\;{\AA}$) 및 ZnO박막($3000\;{\AA}$)의 연속적인 증착과 열처리공정을 통하여 제조하였다. 기판은 $1000\;{\AA}$의 산화막이 열적으로 성장되어 있는 Si 기판을 사용하였다. In/ZnO 박막 이중층의 열처리온도에 따른 구조적 및 전기적 특성을 X-선회절기, 주사전자현미경 및 4점측정시스템을 통하여 조사하였다. 이들 막에 대하여 열처리온도에 따른 암모니아가스에 대한 감도, 선택성 및 시간응답특성을 구하였다. 열처리온도 $400^{\circ}C$, 동작온도 $300^{\circ}C$에서 100 ppm의 암모니아가스를 주입한 결과 140%의 최대감도를 나타내었으며 CO, $NO_x$ 가스에 대한 감도는 아주 낮은 것으로 나타났다.

• 한국진공학회지
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• 제22권5호
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• pp.245-249
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• 2013

MOSFET 구조의 차세대 Oxide 박막으로 주목받고 있는 $HfO_X$박막을 rf magnetron sputter를 이용하여 Si(100) 기판 위에 증착하였다. 증착시 산소의 유량을 5, 10, 15 sccm으로 변화를 주며 증착하였고 이후 furnace에서 400부터 $800^{\circ}C$까지 질소분위기로 열처리 하였다. 실험결과 $HfO_X$ 박막의 전기적 특성은 산소유량 증가에 따라 누설전류 특성이 향상되었으나, 열처리 온도가 증가함에 따라서는 감소하였다. 특히, 이 논문에서는 Nano-indenter와 AFM으로 $HfO_X$ 박막의 nanomechanics 특성을 측정하였다. 측정 결과에 의하면 열처리 온도가 증가함에 따라 최대 압입력을 기준으로 최대 압입 깊이가 24.9 nm에서 38.8 nm로 증가하였으며 특히 $800^{\circ}C$ 열처리된 박막에서 압입 깊이가 급격하게 증가하였다. 이러한 압입 깊이의 급격한 증가는 박막내 응력 완화에 의한 스트레스 변화로 예상되며, 그 원인으로 증착시 박막내 포함된 산소가 열처리 조건에 의해 빠져나감에 의한 것으로 판단된다.

• 한국전기전자재료학회논문지
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• 제27권6호
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• pp.350-355
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• 2014

Bottom-gate tin oxide ($SnO_2$) thin film transistors (TFTs) were fabricated on $N^+$ Si wafers used as gate electrodes. 60-nm-thick $SnO_2$ thin films acting as active layers were sputtered on $SiO_2/Al_2O_3$ films. The $SiO_2/Al_2O_3$ films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the $SnO_2$ thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of $SnO_2$ TFTs was measured as a function of the flow ratio of oxygen to argon ($O_2/Ar$). The mobility variation with $O_2/Ar$ was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of $SnO_2$ films. The mobility decreased with increasing $O_2/Ar$. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of $SnO_2$ films.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.63.2-64
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• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• 한국재료학회지
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• 제22권10호
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• pp.526-530
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• 2012

Silica-based ceramic-matrix composites have shown promise as advanced materials for many applications such as chemical catalysts, ceramics, pharmaceuticals, and electronics. $SiO_2$-CuO-$CeO_2$ multi-component powders and their thin film, using an oxalic acid template as a chelating agent, have larger surface areas and more uniform pore size distribution than those of inorganic acid catalysts. $SiO_2$-CuO-$CeO_2$ composite powders were synthesized using tetraethylorthosilicate, copper (II) nitrate hemi (pentahydrate), and cerium (III) nitrate hexahydrate with oxalic acid as template or pore-forming agent. The process of thermal evolution, the phase composition, and the surface morphology of these powders were monitored by thermogravimetry-differential thermal analysis (TG-DTA), X-ray diffractometry (XRD), field-emission scanning electron microscopy (FE-SEM), and energy dispersive X-ray spectrometry (EDXS). The mesoporous property of the powders was observed by Brunner-Emmett-Teller surface (BET) analysis. The improved surface area of this powder template with oxalic acid was $371.4m^2/g$. This multi-component thin film on stainless-steel was prepared by sol-gel dip coating with no cracks.