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http://dx.doi.org/10.4313/JKEM.2005.18.11.1024

Liquid Crystal Alignment Effects on SiOx Thin Film by Electron Beam Evaporation Method  

Kang, Hyung-ku (연세대학교 전기전자공학과)
Han, Jin-Woo (연세대학교 전기전자공학과)
Kang, Soo-Hee (연세대학교 전기전자공학과)
Kim, Jong-Hwan (연세대학교 전기전자공학과)
Kim, Young-Hwan (연세대학교 전기전자공학과)
Hwang, Jeoung-Yeon (연세대학교 전기전자공학과)
Seo, Dae-Shik (연세대학교 전기전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.11, 2005 , pp. 1024-1027 More about this Journal
Abstract
By using $45^{\circ}$ obliqued evaporation method with electron beam system, uniformly vertical liquid crystal (LC) alignment was achieved. And a high pretilt angles of about $2.5^{\circ}$ were measured. Also, it was verified that there are no variations of pretilt angle as a function of $SiO_x$ thin film thickness 20 nm and 50 nm. A good LC alignment states were observed at annealing temperature of $250^{\circ}C$. Consequently, the high pretilt angle and the good thermal stability of LC alignment by $45^{\circ}$ obliqued electron beam evaporation method on the $SiO_x$ thin film can be achieved.
Keywords
LC alignment; Pretilt angle; Annealing; Thermal stability;
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