• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1037-1041
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• 2001

Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{\circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${\mu}{\textrm}{m}$/h to maximum 10.1${\mu}{\textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${\mu}{\textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1150-1154
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• 2001

Silicon oxynitride (SiON) thick films using the core layer of silica optical waveguide have been deposited on Si wafer by PECVD at low temperature (32$0^{\circ}C$) were obtained by decomposition of appropriate mixture of (SiH$_4$+$N_2$O+$N_2$) gaseous mixtures under RF power and SiH$_4$/($N_2$O+$N_2$) ratio deposition condition. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4663 to 1.5496. A high SiH$_4$/($N_2$O+$N_2$) of 0.33 and deposition power of 150 W leads to deposition rates of up to 8.67 ${\mu}{\textrm}{m}$/h. With decreasing SiH$_4$/($N_2$O+$N_2$) ratio, the SiON layer become smooth from 41$\AA$ to 6$\AA$.

• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.35-39
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• 2023

Silicon oxide thin films have been deposited by plasma-enhanced chemical vapor deposition in SiH4 and N2O plasma along the variation of the gas flow ratio. Optical emission spectroscopy was employed to monitor the plasma and ellipsometry was employed to obtain refractive index of the deposited thin film. The atomic ratio of Si, O, and N in the film was obtained using XPS depth profiling. Fourier Transform Infrared Spectroscopy was used to analyze structures of the films. RI decreased with the increase in N2O/SiH4 gas flow ratio. We noticed the increase in the Si-O-Si bond angles as the N2O/SiH4 gas flow ratio increased, according to the analysis of the Si-O-Si stretching peak between 950 and 1,150 cm-1 in the wavenumber. We observed a correlation between the optical emission intensity ratio of (ISi+ISiH)/IO. The OES intensity ratio is also related with the measured refractive index and chemical composition ratio of the deposited thin film. Therefore, we report the added value of OES data analysis from the plasma related to the thin film characteristics in the PECVD process.

• Journal of the Korean Ceramic Society
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• v.26 no.1
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• pp.31-36
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• 1989

In order to synthesize AlN-polytypes from AlN-SiO2-Al2O3 system, composition A (AlN/SiO2/Al2O3=1/0.3/0.05, mole ratio) and composition B(AlN-SiO2-Al2O3=1/0.2/0.05, mole ratio) were used. AlN-polytypes were produced by nitriding the mixture at 175$0^{\circ}C$~190$0^{\circ}C$ under N2 atmosphere. For lower reaction temperature, 15R phase was produced and in the case of higher reaction temperature, AlN phase was only produced. As each composition was heated at 185$0^{\circ}C$ in N2 atmosphere, produced main phases were 15R phase for composition A and 21R phase for composition B respectively. The fracture surfaces of produced reactants showed porous skeleton structure.

• Journal of the Korean Ceramic Society
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• v.30 no.2
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• pp.85-92
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• 1993

Oxynitride glasses in Na-Ca-Si-O-N system were prepared by melting at 135$0^{\circ}C$ for 2 hours in N2 gas. The effects of Si/Na mole ratio and the various Si3N4 contents were investigated. Stable oxynitride glasses can be obtained up to 9wt.% Si3N4 content in case the Si/Na mole ratio was 2.12 and 1.62, but $\beta$-Si3N4 was precipitated at 9wt.% Si3N4 content in case the Si/Na mole rtio was 1.12. Density (p), chemical durability, hardness (Hv), and fracture toughness (KIC) increased with increasing Si3N4 content. In cae the Si/Na mole ratio was 1.12, the increment of properties was remarkable but hardness and fracture toughness did not increase no longer owing to precipitation of $\beta$-Si3N4.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.2
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• pp.471-475
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• 1999

The metal plasma-etch damage immunity of nMOSFET with $N{_2}O$ gate oxide is found to be improved comparing to that with regular pure oxide of similar thickness. With increasing the antenna ratio (AR), the characteristics of nMOSFETs with $N{_2}O$ oxide shows tighter initial distribution and smaller degradation under constant field stress, which is explained by the effect of the nitrogen at the substrate $Si/SiO_2$ interface. Also, if $N{_2}O$ gate oxide is used, the maximum allowable size of metal AAR and PAR may be increased to the much larger values. These improvements of nMOSFETs with $N{_2}O$ gate oxide are attributed to the effect of the interface hardness improved by the nitrogen included at the substrate-Si/$N{_2}O$-oxide interface.

• Journal of the Korean Ceramic Society
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• v.24 no.1
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• pp.23-32
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• 1987

Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

• Journal of the Korean Ceramic Society
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• v.42 no.1
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• pp.16-21
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• 2005

The effect of additive composition, using AlN and $Er_{2}O_{3}$ as sintering additives, on the mechanical properties of liquid-phase-sintered, and subsequently annealed SiC ceramics was investigated. The microstructures developed were quantitatively analyzed by image analysis. The average thickness of SiC grains increased with increasing the $Er_{2}O_{3}/(AlN + Er_{2}O_{3})$ ratio in the additives whereas the aspect ratio decreased with increasing the ratio. The mechanical properties versus $Er_{2}O_{3}/(AlN + Er_{2}O_{3})$ ratio curve had a maximum; i.e., there was a small composition range at which optimum mechanical properties were realized. The best results were obtained when the ratio ranged from 0.4 to 0.6. The flexural strength and fracture toughness of the SiC ceramics were $550\~650\;MPa$ and $5.5\~6.5$ MPa${\cdot}m^{1/2}$, respectively.

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.837-842
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• 1992

SiC and Si mixtures dispersed by 0.5~10.0 wt% of Al2O3 and reinforced by SiC whisker were sintered to Si3N4 bonded SiC bodies at 140$0^{\circ}C$ in a N2 gas atmosphere, and the nitridation and mechanical properties of sintered bodies were investigated. From these observation, it is concluded that relative density and bending strength increased with the rising of nitridation and the highest nitridation ratio was obtained for a specimen having 1.5 wt% Al2O3. On the other hand, the amount of $\beta$-Si3N4 in the specimens containing Al2O3 more than 5.0 wt% was increased abruptly and the best in fracture toughness was sintered for a composits having 30 wt% SiC whiskers.

• Korean Journal of Soil Science and Fertilizer
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• v.32 no.1
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• pp.39-46
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• 1999

This study was performed to examine the effect of initial composition ratio and various reaction conditions on CEC and crystallinity of the product in hydrothermal synthesis of zeolitic materials from fly ash. Na-P1 zeolite was formed from the mixture with $SiO_2/Al_2O_3$ ratio above 2.55, however from the mixture with $SiO_2/Al_2O_3$ ratio below 2.25 hydroxy sodalite was formed. The CEC of reaction product(Na-P1 zeolite) treated with 3N-NaOH, $Na_2O/Al_2O_3$ ratio 2.55 and $SiO_2/Al_2O_3$ ratio 2.0 for 12 hours at $103^{\circ}C$ was about $285cmol^+kg^{-1}$, which was higher than those of the products of other reaction condition. The crystallinity of Na-P1 zeolite as high as 45.1% was attained at the optimum reaction condition of 2N-NaOH, $SiO_2/Al_2O_3$ ratio 2.55, $Na_2O/Al_2O_3$ ratio 1.5 for 12 hours at $103^{\circ}C$. The XRD peak of the reaction product could be measured at 7.16, 5.04, 4.12, 3.18, $2.69{\AA}$ and tetragonal pillar shape observed by SEM image be characteristic for Na-P1 zeolite. Judging from the result, it should be considered the optimum synthesis condition for Na-P1 zeolite from fly ash was 2~3N NaOH, $SiO_2/Al_2O_3$ ratio 2.55 and $Na_2O/Al_2O_3$ ratio 1.5~2.0 for 12 hours at $80{\sim}103^{\circ}C$.