• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.245-250
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• 1996

$Y_2O_3$ thin film on si(100) was successfully grown by ionized cluster beam(ICBD) technique at substrate temperature of around $500^{\circ}C$ and pressure of ~$10^{-5}$Torr.To prevent the oxidation of Si substrae, a very thin yttrium layer was deposited on Si before reactive depositing of oxygen and yttrium source. In asdeposited stage, b.c.c and h.c.p strucutres of $Y_2O_3$ were observed from S-ary analysis. From the observation of spots and ring patterns in selected area diffractin(SAD) patterns. crystallane formation and growth could be proceeded during the deposition. $Y_2O_3$/mixed layer/$SiO_2=170\AA/50\AA/10\AA$ structure were verified by high resolution transmition electron imcroscopy(HRTEM) image, and the formation of amorphous layer of SiO2 was discussed . Electricla charateristics of the film were also investigated . In as-deposited Pt/$Y_2O_3$/Si sturcuture, leakage current was less than $10^{-6}$A/$\textrm{cm}^2$ at 7MV/cm strength.

• Applied Chemistry for Engineering
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• v.9 no.6
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• pp.878-883
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• 1998

The methane combustion reaction was conducted over Pb-ZSM-5 catalysts. ZSM-5 synthesized at low temperature and atomospheric pressure was used as a support. The change of methane conversion with $SiO_2/Al_2O_3$ molar ratio was tested. The methane conversions of the synthesized Pb-ZSM-5 catalyst was compared with those of a commercial Pd-ZSM-5(PQ Co.) and $PdO/{\gamma}-Al_2O_3$. The methane conversion increased with the decrease in $SiO_2/Al_2O_3$ molar ratio. The combustion rate of methane also increased with the decrease in $SiO_2/Al_2O_3$ molar ratio. The synthesized Pb-ZSM-5 showed better methane conversion than that of the commercial one. It is found that a crucial factor in methane combustion reaction is oxygen adsorption strength on the catalysts.

• Korean Journal of Materials Research
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• v.5 no.3
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• pp.324-332
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• 1995

전자빔 증착법을 사용하여 Ti과 Co를 Si(100) 단결정, 다결정 Si 및 Si$O_{2}$기판에 증착한 후 90$0^{\circ}C$에서 20초 급속 열처리하여, Co/Ti 이중박막으로부터의 실리사이드화 반응을 조사하였다. 단결정 시편의 경우 Ti의 두께를 5~6mm로 최소화함으로서 두께가 균일하고 기판과의 계면이 평탄하며 비저항이 낮고 열적 안정성이 높은 Co$Si_{2}$ 에피박막을 형성할 수 있었다. 그러나 다결정 시편에는 두께와 계면이 불균일하고 열적으로도 불안정한 다결정의 Co$Si_{2}$와 그 위에 두개의 Co-Ti-Si혼합층이 형성되었다. 한편 Si$O_{2}$ 우에 증착된 Co/Ti은 열처리를 하여도 확산하지 않고 그대로 남아 있어서, Co/Ti 이중박막의 Si$O_{2}$와의 반응성이 미약함을 보여 주었다.

• Korean Journal of Materials Research
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• v.8 no.10
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• pp.956-960
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• 1998

The interfacial reaction between the CoINb bilayer and the $SiO_2$ substrate in the temperature range of $330^{\circ}C$-$800^{\circ}C$ in a vacuum has been investigated by X-ray photoelectron spectroscopy, glancing angle XRD, Auger Electron Spectroscopy and Atomic force microscopy. The Co and Nb were actively interdiffused at $600^{\circ}C$, and the layer inversion completed at $700^{\circ}C$. NbO was formed by interfacial reaction between the Nb interlayer and the $SiO_2$ substrate, while $Nb_20_5$ was formed on the surface by reaction of Nb with oxygen in the ambients. Free Si atoms obtained by the reaction between Nb and $SiO_2$ formed silicides like CoSi and $Nb_5Si_3$ by reacting with Co and Nb remnants. The sheet resistance of the Co/Nb bilayer increased substantially after annealing at $800^{\circ}C$. which is due to the agglomeration of the Co layer to reduce its surface energy.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.189-194
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• 1999

Crystallization of glasses in the system (Ca, Sr, Ba)$O-Al_2O_3-B_2O_3-SiO_2-TiO_2$ and dielectric properties of crystallized glasses were investigated. As increasing B2O3 content and decreasing SiO2 content in the glass, the major crystalline phase changed from $(Sr, Ba)_2TiSi_2O_8$ to (Ca, Sr, Ba)TiO3, the dielectric constant of crystallized glasses increased and the Temperature Coefficient of Capacitance (TCC) changed to negative. The dielectric constant and TCC was estimated for (Sr, Ba)2TiSi2O8 phase as 18 and -440 $ppm/^{\circ}C$, respectively and for (Ca, Sr, Ba)TiO3 phase as 307 and -1900 $ppm/^{\circ}C$, respectively. The dielectric properties of (Ca, Sr, Ba)TiO3 phase (in this study) were similar to those of (Ca, Ba) TiO_3 solid-solution^12)$, but $(Sr, Ba)_2TiSi_2O_8$ phase (in this study) and $Sr_2TiSi_2O_\;8^4$ showed the different properties.

• Journal of the Korean Ceramic Society
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• v.46 no.3
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• pp.323-329
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• 2009

Influences of ceramic filler types and dose on the sintering, phase evolution, and dielectric properties of ceramic/CaO-$Al_2O_3-SiO_2$ glass composites were investigated. All of the specimens were sintered at $900^{\circ}C$ for 2 h, which conditions are required by the lowtemperature co-firing ceramic (LTCC) technology. Ceramic fillers of $Al_2O_3,\;SiO_2$, kaolin, and wollastonite were used. The addition of $Al_2O_3$ filler yielded the crystalline phases of alumina and wollastonite, and the densification over 95% of the relative density was achieved up to 50 wt% addition of the filler. For the cases of the fillers of $SiO_2$, kaolin, and wollastonite, crystalline phases of quartz, mullite, and wollastonite formed, while the densification decreased monotonically with the filler addition. In overall, all the investigated fillers with 10 wt% addition resulted in a reasonable sintering (over 95 %) and low dielectric constants (less than 6), demonstrating the feasibility of the investigated composites for application to a LTCC substrate material with a low dielectric constant.

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.223-228
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• 1998

Glass films of $SiO_2-TiO_2-M_xO_y$ (M = Co, Cr or Cu) have been prepared on soda-lime-silica slide glasses by the chemical solution method using a spin-coating technique. Commercially available tetraethyl orthosilicate, titanium trichloride, and cobalt-, chromium- and copper-nitrates were used as starting materials. No crystalline segregations of $Co_3O_4$, $Cr_2O_3$ and CuO were observed by X-ray diffraction ${\theta}-2{\theta}$ scans. From the optical transmission analysis, cobalt existed as $ Co^{2+}$ in tetrahedral coordination, chromium as $Cr^{6+}$ in tetrahedral symmetry and copper as $Cu^{2+}$ in octahedral coordination. Films with a crack-free and no texture exhibited homogeneous interfaces between the films and the substrates along the cross-section.

• Resources Recycling
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• v.21 no.5
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• pp.65-71
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• 2012

The equilibrium distribution of bismuth and lead between molten PbO-$SiO_2$ slag and bismuth phase was studied in the temperature range of $775^{\circ}C$ to $850^{\circ}C$ in a MgO crucible. The oxygen partial pressure of atmosphere was controlled by $P_{CO2}/P_{CO}$ ratio. The value of $(%PbO)_{slag}/[%Pb]_{metal}$ increased with increasing $SiO_2$ content of slag, and the value of $(%Bi_2O_3)_{slag}/[%Bi]_{metal}$ decreased with increasing $SiO_2$ content of slag. The concentration of Pb in metal increased with increasing temperature. These experimental results agreed well with the thermodynamic prediction.

• Journal of the Korean Chemical Society
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• v.53 no.3
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• pp.233-243
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• 2009

We have investigated the infrared spectra for CO adsorbed on silica supported nickel(Ni-Si$O_2$), silica supported copper(Cu-Si$O_2$), silica supported nickel-copper alloys(Ni/Cu-Si$O_2$) of several compositions with varying CO pressures(0.2 $torr{\sim}$50 torr) at room temperature and on pumping to vacumn at room temperature within the frequency range of 1500 $cm^{-1}{\sim}2500\;cm^{-1}$. Four bands(2059.6 $cm^{-1},\;{\sim}$2036.5 $cm^{-1},\;{\sim}$ 1868.7 $cm^{-1},\;{\sim}$ 1697.1 $cm^{-1}$) were observed for Ni-Si$O_2$, two bands($\sim$2115.5 $cm^{-1},\;{\sim}$1743.0 $cm^{-1}$) were observed for Cu-Si$O_2$ and five bands(${\sim}2123.2\;cm^{-1}$, 2059.6 $cm^{-1},\;{\sim}$2036.4 $cm^{-1},\;{\sim}$1899.5 $cm^{-1},\;{\sim}$1697.1 $cm^{-1}$) were observed for Ni/Cu-Si$O_2$. These absorption bands correspond with those of the previous reports approximately. The bands below 1800 $cm^{-1}$ were only observed with Ni metal or Ni/Cu alloy crystal plane containing step at room temperature and the ${\sim}1697.1\;cm^{-1}$ bands observed with Ni-Si$O_2$ and Ni/Cu-Si$O_2$ may be ascribed to CO molecule adsorbed on the adsorption sites near step. The bands below 2000 $cm^{-1}$ were rarely observed with Cu metal crystal plane at room temperature and the 1743.0 $cm^{-1}$ bands may be ascribed to CO molecule adsorbed on the adsorption sites near step. The band shifts of adsorbed CO with varing Cu contents from 0 to 0.5 mole fraction at the same CO pressure or at the same pumping time to vacumn were below 21 $cm^{-1}$. and comparatively small than those with other ⅠB metal addition. It may means ligand effect of Cu d electron is small.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.394-399
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• 2016

The silicon dioxide ($SiO_2$) was deposited using various gas as oxygen and nitrous oxide ($N_2O$) in nowadays. In order to improve electrical characteristics and the interface state density ($D_{it}$) in low temperature, It was deposited with carbon dioxide ($CO_2$) and silane ($SiH_4$) gas by inductively coupled plasma chemical vapor deposition (ICP-CVD). Each $D_{it}$ of $SiO_2$ using $CO_2$ and $N_2O$ gas was $1.30{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$ and $3.31{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$. It showed $SiO_2$ using $CO_2$ gas was about 2.55 times better than $N_2O$ gas. After 10 years when the thin film was applied to metal/insulator/semiconductor(MIS)-nonvolatile memory(NVM), MIS NVM using $SiO_2$($CO_2$) on tunneling layer had window memory of 2.16 V with 60% retention at bias voltage from +16 V to -19 V. However, MIS NVM applied $SiO_2$($N_2O$) to tunneling layer had 2.48 V with 61% retention at bias voltage from +20 V to -24 V. The results show $SiO_2$ using $CO_2$ decrease the $D_{it}$ and it improves the operating voltage.