• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.642-647
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• 2012

$TiO_2$ thin films for a pulse power capacitor were deposited by RF magnetron sputtering. The effects of the deposition gas ratio and thickness on the crystallization and electrical properties of the $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on Si substrates at room temperature changed to the anatase from the rutile phase with an increase in the oxygen partial pressure. Also, the crystallinity of the $TiO_2$ films was enhanced with an increase in the thickness of the films. However, $TiO_2$ films deposited on a PET substrate showed an amorphous structure, unlike those deposited on a Si substrate. An X-ray photoelectron spectroscopy(XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of the $TiO_2$ films as a function of the frequency was significantly changed with the thickness of the films. The films showed a dielectric constant of 100~110 at 1 kHz. However, the dissipation factors of the films were relatively high. Films with a thickness of about 1000nm showed a breakdown strength that exceeded 1000 kV/cm.

• Journal of Magnetics
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• v.14 no.4
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• pp.161-164
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• 2009

Iron-doped $Sn_{1-x}Fe_xO_2$ (x = 0.0, 0.05, 0.1, 0.2, 0.33) thin films on Si(100) substrates and powders were prepared by a chemical solution process. The x-ray diffraction (XRD) patterns of the $Sn_{1-x}Fe_xO_2$ thin films and powders showed a polycrystalline rutile tetragonal structure. Thermo gravimetric (TG) - differential thermal analysis (DTA) showed the final weight loss above $430{^{\circ}C}$ for all powder samples. According to XRD Rietveld refinement of the powders, the lattice parameters and unit cell volume decreased with increasing Fe content. The magnetic properties were characterized using a vibrating sample magnetometer (VSM) and M$\ddot{o}$ssbauer spectroscopy. The thin film samples with x = 0.1 and 0.2 showed paramagnetic properties but thin films with x = 0.33 exhibited ferromagnetic properties at room temperature. Mossbauer studies revealed the $Fe^{3+}$ valence state in the samples. The ferromagnetism in the samples can be interpreted in terms of the direct ferromagnetic coupling of ferric ions via an electron trapped in a bridging oxygen deficiency, which can be explained using the F-center exchange model.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.126-133
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• 1997

In order to apply for the gas sensing layer and the piezoelectric thin film devices, we studied the effects of magnetron sputtering conditions and annealing temperature on the electrical and structual characteristics of the ZnO thin film. The optimal deposition conditions, in order to obtain a c axis of the ZnO (002) phase thin film which is perpendicular to SiO$_{2}$/Si substrate, were like these ; substrate temperature 150.deg. C, chamber pressure 2 mtorr, R.F. power 300 watts, gas flow ratio 0.4[O$_{2}$(Ar + $O_{2}$)]. When the ZnO thin film was annealed in 600.deg. C, $O_{2}$ gas ambient for 1 hr, the resistivity was 2.6 x 10$^{2}$.ohm.cm and the grain size of ZnO thin film was less than 1 .mu.m. So the ZnO thin film acquired from above conditions can apply for the gas sensing layer which require a c axis perpendicular to the substrate surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.81-83
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• 1992

The superconducting thin films deposited on $SiO_x$ substrate by R.F magnetron sputter using $YBa_2Cu_3O_x$ single target have been made and annealed at $940^{\circ}C$ for 30 min. The thickness of films were 1000-2000${\AA}$ with a rate of 20-25${\AA}/min$ and superconducting properties of thin films depended on the compositions of pre-annealed the thin films. It has been analyzed by SEM photo-analysis and X-ray diffraction patterns of these samples obtained under the various conditions of this sputtering methods. and recognized the supperconducting thin films by electric properties.

• Journal of the Mineralogical Society of Korea
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• v.13 no.4
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• pp.221-230
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• 2000

이성분 희토류 원소로 치환된 4종류의 합성불화인회석(synthetic fluorapatite) (Ap49: La+Gd, Ap50:Ce+Dy, Ap51: Pr+Er, Ap54: Eu+Lu; $Ca{10-x-2y}$ $Na_{y}$ $REE_{x+y}$($P_{1-x}$ //$Si_{x}$ $_{4}$)$_{6}$ $F_{2}$, x=0.13~0.12, y=0.26~0.42)을 대상으로 X-선 회절분석을 통해 얻어진 자료를 이용하여 리트벨트 구조분석을 실시하고 치환된 희토류원소의 거동을 단결정법으로 구해진 결과와 비교.분석하였다. 리트벨트 구조분석결과 합성불화인회석은 공간군 $P6_3$/m, 단위포는 평균하여 a=9.3906(1) $\AA$, c=6.8924(1) $\AA$, V=527.36 $\AA^3$의 값을 갖는다. 구조의 정밀도를 나타내는 R 지수를 보면 $R_{B}$ / 값은 17.29~18.80이고 S(GofF)값은 1.44~1.68로 계산되었다. 불화인회석은 9개의 산소를 배위하는 Ca1자리와 6개의 산소와 하나의 불소가 배위하는 Ca2자리가 있으며 Ca1-O의 평균거리는 2.563 $\AA$이고 Ca2-O의 평균거리는 $2.460 \AA$으로 Ca1자리가 Ca2자리보다 다소 크다. 구조자리 치환식에서는 $Ca^{2+}$ / 자리를 치환하는 $REE^{3+ }$ 로 인하여 전하균형을 맞춰주기 위해서 인과규소가 함께 참여하였다. ($REE^{3}$+Si$^{ 4+}$ $2Ca^{2+}$ : Ca1) 계산된 희토류원소의 자리점유율(REE-Ca2/REE-Cal)은 원자번호가 증가함에 따라 일정하게 감소하는 경향을 보여주며 이는 희토류원소의 거동이 LREE는 크기가 상대적으로 작은 Ca2 자리에 우선 치환되고 HREE는 크기가 큰 Ca1자리에 우선 치환되는 경향을 지시한다.

• Journal of the Korean institute of surface engineering
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• v.25 no.3
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• pp.126-132
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• 1992

Recent VLSI requires materials with high dielectric constant in order to reduce their storage capacitor areas. Thin TaOx film was formed from Ta(OCH3)5 by photo-CVD method at a low temperature. The result shows that the film obtained by photo-CVD method is this study has good step coverage, high dielectric constant (20-25) and low leakage current. The high strong peaks from Ta(4f), Ta(4d), and O(ls) levels were observed by XPS analysis. From the diffraction pattern and TEM prcture analysis, the TaOx thin film was observed to be amorphous. This kind of the deposition method could be considered to be a very promising method applied to VLSI.

• Korean Journal of Materials Research
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• v.9 no.7
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• pp.701-706
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• 1999

The crystal structure and magnetic properties of magnetic oxide system (F $e_2$ $O_3$)$_{5}$(A $l_2$ $O_3$)$_{4-x}$(G $a_2$ $O_3$)$_{x}$)SiO has been studied using X-ray diffraction and Mossbauer spectroscopy The changes of magnetic structure by the Ga ion substitution and the temperature variation have been investigated using Mossbauer spectroscopy, and the results are compared with those of the SQUIB measurements. Results of X-ray diffraction indicated that the crystal structures of the system change from a cubic spinel type to an orthorhombic via the intermediate region. This magnetic oxide system seems to be new kind of spinel type ferrites containing high concentration of cation vacancies. Various and complicated Mossbauer spectra were observed in the samples (x>0.2) at temperatures lower than room temperature. This result could be explained by freezing of the superparamagnetic dusters. On cooling and substitution, magnetic states of the system show various and multicritical properties. Unexpected dip in magnetization curves below 50K was observed in SQUID measurements. It was interpreted as an effect of spin canting including spin freezing or collective spin behavior.ior.r.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.1
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• pp.31-36
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• 1993

Na-Fe Tourmalene ($NaFe_3Al_6B_3Si_6O_{27}F_4$)single crystals were grown by FZ method. The Growth conditions are counter rotation 20~30rpm, growth rate 1~5mm/hr in the atmospheric environment. The transition elements as Fe(in this research), Mn, Co, etc, are exist in the theoretical fomulae so that dopants were not added. The feed rod was sintered between $1000^{\circ}C$ and $1l00^{\circ}C$, but at higher temperature, it was difficult to manufacture the feed rod because of evaporation of the elements such as F. As grown crystals had a black color and the length of 50~60mm, the diameter of 5~6mm. X-ray powder diffraction pattern indicated that the composition of the feed rod was right to the Tourmaline composition. By FT-IR spectra, the state of bonding of each element was charaterized.

• Bulletin of the Korean Chemical Society
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• v.30 no.3
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• pp.543-550
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• 2009

The single-crystal structure of largely ammonium-exchanged zeolite Y dehydrated at room temperature (293 K) and 1 ${\times}\;10^{-6}$ Torr. has been determined using synchrotron X-radiation in the cubic space group $Fd\overline{3}m\;(a=24.9639(2)\AA)$ at 294 K. The structure was refined to the final error index $R_1$ = 0.0429 with 926 reflections where $F_o>4\sigma(F_o)$; the composition (best integers) was identified as |$(NH_4)_{60}Na_{11}$|[$Si_{121}Al_{71}O_{384}$]-FAU. The 11 $Na^{+}$ ions per unit cell were found at three different crystallographic sites and 60 ${NH_4}^{+}$ ions were distributed over three sites. The 3 $Na^{+}$ ions were located at site I, the center of the hexagonal prism ($Na-O\;=\;2.842(5)\;\AA\;and\;O-Na-O\;=\;85.98(12)^{\circ}$). The 4 $Na^{+}$ and 22 ${NH_4}^{+}$ ions were found at site I' in the sodalite cavity opposite the double 6-rings, respectively ($Na-O\;=\;2.53(13)\;\AA,\;O-Na-O\;=\;99.9(7)^{\circ},\;N-O\;=\;2.762(11)\;\AA,\;and\;O-N-O =\;89.1(5)^{\circ}$). About 4 $Na^{+}$ ions occupied site II ($(Na-O\;=\;2.40(4)\;\AA\;and\;O-Na-O\;=\;108.9(3)^{\circ}$) and 29 ${NH_4}^{+}$ ions occupy site II ($N-O\;=\;2.824(9)\;\AA\;and\;O-N-O\;=\;87.3(3)^{\circ}$) opposite to the single 6-rings in the supercage. The remaining 9 ${NH_4}^{+}$ ions were distributed over site III' ($N-O\;=\;2.55(3),\;2.725(13)\;\AA\;and\;O-N-O\;=\;94.1(13),\;62.16(15),\;155.7(14)^{\circ}$).

• Bulletin of the Korean Chemical Society
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• v.30 no.6
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• pp.1285-1292
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• 2009

Large single crystals of zeolite, |$Na_{75}$|[$Si_{117}Al_{75}O_{384}$]-FAU (Na-Y, Si/Al = 1.56), were synthesized from gels with composition of 3.58Si$O_2$ : 2.08NaAl$O_2$ : 7.59NaOH : 455$H_2$O : 5.06TEA : 2.23TCl. One of these, a colorless single-crystal was ion exchanged by allowing aqueous 0.02 M CsOH to flow past the crystal at 293 K for 3 days, followed by dehydration at 673 K and 1 ${\times}\;10^{-6}$ Torr for 2 days. The crystal structure of fully dehydrated partially $Cs^+$-exchanged zeolite Y, |$Cs_{45}Na_{30}$|[$Si_{117}Al_{75}O_{384}$]-FAU per unit cell (a = 24.9080(10) $\AA$) was determined by single-crystal X-ray diffraction technique in the cubic space group Fd $\overline{3}$ m at 294(1) K. The structure was refined using all intensities to the final error indices (using only the 877 reflections with $F_o\;>\;4{\sigma}(F_o))\;R_1$ = 0.0966 (Based on F) and $R_2\;=\;0.2641\;(Based\;on\;F^2$). About forty-five $Cs^+$ ions per unit cell are found at six different crystallographic sites. The 2 $Cs^+$ ions occupied at site I, at the centers of double 6-ring (D6Rs, Cs-O = 2.774(10) $\AA$ and O-Cs-O = 88.9(3) and 91.1(3)$^o$). Two $Cs^+$ ions are found at site I’ in the sodalite cavity; the $Cs^+$ ions were recessed 2.05 $\AA$ into the sodalite cavity from their 3-oxygen plane (Cs-O = 3.05(3) $\AA$ and O-Cs-O = 77.4(13)$^o$). Site-II’ positions (opposite single 6-rings in the sodalite cage) are occupied by 7 $Cs^+$ ions, each of which extends 2.04 $\AA$ into the sodalite cage from its 3-oxygen plane (Cs-O = 3.067(11) $\AA$ and O-Cs-O = 80.1(3)$^o$). The 26 $Cs^+$ ions are nearly three-quarters filled at site II in the supercage, being recessed 2.34 $\AA$ into the supercage (Cs-O = 3.273(8) $\AA$ and O-Cs-O = 74.3(3)$^o$). The 4 $Cs^+$ ions are found at site III deep in the supercage (Cs-O = 3.321(19) and 3.08(3) $\AA$), and 4 $Cs^+$ ions at another site III’ (Cs-O = 2.87(4) and 3.38(4) $\AA$). About 30 $Na^+$ ions per unit cell are found at one crystallographic site; The $Na^+$ ions are located at site I’ in the sodalite cavity opposite double 6-rings (Na-O = 2.578(11) $\AA$ and O-Na-O = 97.8(4)$^o$).