• 제목/요약/키워드: $SiO_{x}F_{y}$/a-Si

검색결과 124건 처리시간 0.025초

철 기반 촉매의 Fischer-Tropsch 합성에서 γ-Al2O3/SiO2 혼합 지지체 조성의 영향 (Effect of Composition of γ-Al2O3/SiO2 Mixed Support on Fischer-Tropsch Synthesis with Iron Catalyst)

  • 민선기;노성래;유성식
    • Korean Chemical Engineering Research
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    • 제55권3호
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    • pp.436-442
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    • 2017
  • Fischer-Tropsch 합성(F-T 합성)은 석탄, 바이오매스, 천연가스 등을 개질하여 얻은 합성 가스(CO, $H_2$)를 촉매를 이용하여 탄화수소로 전환 하는 기술이다. Fischer-Tropsch 합성에 이용되는 촉매는 활성 금속, 조촉매, 지지체로 구성되는데 이들의 종류와 조성은 반응의 활성 및 생성물 선택도에 영향을 미친다. 본 연구에서는 ${\gamma}-Al_2O_3$$SiO_2$ 혼합 지지체의 조성이 Fiscsher-Tropsch 반응의 활성과 생성물 선택도에 미치는 영향을 알아 보기위해, ${\gamma}-Al_2O_3/SiO_2$ 혼합 지지체를(100/0 wt%, 75/25 wt%, 50/50 wt%, 25/75 wt%, 0/100 wt%) 이용하여 함침(impregnation)법으로 철 촉매를 제조하였다. 촉매의 물리적 특성은 질소 물리 흡착 법과 X-선 회절 분석법을 통해 분석 하였고, 고정층 반응기에서 Fischer-Trosch 반응을 $300^{\circ}C$, 20bar에서, 60시간 동안 수행 하였다. 촉매의 물리적 특성 분석 결과 촉매의 BET 표면적은 ${\gamma}-Al_2O_3$의 조성이 감소함에 따라 감소하였으며, 촉매 기공의 부피 및 평균 크기는 지지체 조성이 ${\gamma}-Al_2O_3/SiO_2$ (50/50 wt%)인 경우를 제외 하고 증가하는 경향을 보였다. 또한, X-선 회절 분석법을 통해 ${\alpha}-Fe_2O_3$의 입자 크기를 계산한 결과 ${\gamma}-Al_2O_3$의 조성이 감소함에 따라 입자 크기가 감소 하였다. Fischer-Tropsch 합성 결과 ${\gamma}-Al_2O_3$의 조성이 감소함에 따라 CO 전환율은 감소 하였으며, C1-C4의 선택도는 ${\gamma}-Al_2O_3$의 조성이 25 wt%일 때 까지 감소하였으며 이와 반대로, C5+의 선택도는 ${\gamma}-Al_2O_3$의 조성이 25 wt%일 때 까지 증가 하였다.

트렌티 식각시 식각 방지막의 형성과 이들이 결함 생성에 미치는 영향 (Formation of Passivation Layer and Its Effect on the Defect Generation during Trench Etching)

  • 이주욱;김상기;김종대;구진근;이정용;남기수
    • 한국재료학회지
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    • 제8권7호
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    • pp.634-640
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    • 1998
  • HBr을 이용한 트렌치 식각시 식각 방지막의 형성과 이들이 결함 생성 및 분포에 미치는 영향을 고분해능 투과전자현미경을 이용하여 연구하였다. $O_2$ 및 다른 첨가 가스로 $SiO_xF_y$, $SiO_xBr_y$ 등의 식각 방지막을 표면에 형성시켜 벽면 undercut을 방지하고 표면의 거칠기를 감소할 수 있었으며, 이후의 트렌치 채움 공정에서 void 가 없는 잘 채원진 구조를 얻을 수 있었다. 형성된 식각 방지막은 격자 결함의 생성 및 이들의 분포에 영향을 미쳤다. 대부분의 식각 유도 결함들은 트렌치 바닥의 가장자리에서 $10\AA$ 이내의 깊이로 분포하였으며, 잔류막의 두께에 의존하였다. 두꺼운 잔류막층 아래로는 결함들이 거의 사라졌으며, 결함층의 깊이와 잔류막 두께는 대체로 반비례하는 것을 나타났다. 기판 내에 존재하는 결정학적인 결함들은 식각종의 입사각이나 에너지에 의존하는 반면에,식각된 표면에서 관찰되는 결함들은 트렌치 식각동안 형성되는 이러한 잔류막의 두께에 크게 의존하는 것으로 나타났다.

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Formation and Characteristics of the Fluorocarbonated SiOF Film by $O_2$/FTES-Helicon Plasma CVD Method

  • Kyoung-Suk Oh;Min-Sung Kang;Chi-Kyu Choi;Seok-Min Yun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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    • pp.77-77
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    • 1998
  • Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

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CF4/O2 Gas Chemistry에 의해 식각된 Ru 박막의 표면 반응 (Surface Reaction of Ru Thin Films Etched in CF 4/O2 Gas Chemistry)

  • 임규태;김동표;김경태;김창일;최장현;송준태
    • 한국전기전자재료학회논문지
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    • 제15권12호
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    • pp.1016-1020
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    • 2002
  • Ru thin films were etched using CF/$_4$O$_2$ plasma in an ICP (inductively coupled plasma etching) system. The maximum etch rate of Ru thin films was 168 nm/min at a CF$_4$/O$_2$ gas mixing ratio of 10 %. The selectivity of SiO$_2$ over Ru was 1.3. From the OES (optical emission spectroscopy) analysis, the optical emission intensity of the O radical had a maximum value at 10% CF$_4$ gas concentration and drcrease with further addition of CF4 gas, but etch slope was enhanced. From XPS (x-ray photoelectron spectroscopy) analysis, the surface of the etched Ru thin film in CF$_4$/O$_2$ chemistry shows Ru-F bonds by the chemical reaction of Ru and F. RuF$_{x}$ compounds were suggested as a surface passivation layer that reduces the chemical reactions between Ru and O radicals. From a FE-SEM (field emission scanning electron microscope) micrograph, we had an almost perpendicular taper angle of 89$^{\circ}$.>.

유도 결합 플라즈마를 이용한 $CeO_2$ 박막의 식각 메카니즘 (The Etching Mechanism of $CeO_2$ Thin Films using Inductively Coupled Plasma)

  • 오창석;김창일
    • 한국전기전자재료학회논문지
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    • 제14권9호
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    • pp.695-699
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    • 2001
  • Cerium dioxide (CeO$_2$) was used as the intermediate layer between the ferroelectric thin film and Si substrate in a metal-ferroelectric-semiconductor field effect transistor (MFSFET), to improve the interface property by preventing the interdiffusion of the ferroelectric material and the Si substrate. In this study, CeO$_2$ thin films were etched with a CF$_4$/Ar gas combination in inductively coupled plasma (ICP). The maximum etch rate of CeO$_2$ thin films was 270$\AA$/min under CF$_4$/(CF$_4$+Ar) of 0.2, 600 W/-200V, 15 mTorr, and $25^{\circ}C$. The selectivities of CeO$_2$ to PR and SBT were 0.21, 0.25, respectively. The surface reaction in the etching of CeO$_2$ thin films was investigated with x-ray photoelectron spectroscopy (XPS). There is a chemical reaction between Ce and F. Compounds such as Ce-F$_{x}$ remains on the surface of CeO$_2$ thin films. Those products can be removed by Ar ion bombardment. The results of secondary ion mass spectrometry (SIMS) were consistent with those of XPS. Scanning electron microscopy (SEM) was used to examine etched profiles of CeO$_2$ thin films. The etch profile of over-etched CeO$_2$ films with the 0.5${\mu}{\textrm}{m}$ line was approximately 65$^{\circ}$.>.

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(1-x)$BiNbO_4-(x)ZnNb_2O_6$ 세라믹스의 저온 소결 및 유전 특성 (Low-temperature sintering and dielectric properties of the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ ceramics)

  • 김윤한;윤상옥;김신;김관수;김경주;박종국
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.284-284
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    • 2007
  • In this study, the microwave dielectric property variations of (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites (x=0.3, 0.5 and 0.7) with 10wt% zinc borosilicate(ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying thes system to LTCC technology. The all composition addition of 10wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, a small amount of $Bi_2SiO_5$ as the secondary phase was observed in the all composition. The substitution of $ZnNb_2O_6$ on the $BiNbO_4$ composites increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the high sintering temperature and low dielectric constant of $ZnNb_2O_6\;than\;BiNbO_4$ ceramics. The increasing of $ZnNb_2O_6$ content from 0.3 to 0.7 in the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites with 10wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 28.1~15.6 in the dielectric constant$({\varepsilon}_r)$, 5,500~8,700GHz in the $Q{\times}f$ value.

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Synthesis and Crystal Structure of Lead Iodide in the Sodalite Cavities of Zeolite A (LTA)

  • Kim, Seok-Han;Lim, Woo-Taik;Kim, Ghyung-Hwa;Lee, Heung-Soo;Heo, Nam-Ho
    • Bulletin of the Korean Chemical Society
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    • 제27권5호
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    • pp.679-686
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    • 2006
  • The positions of $PbI _2$ molecule synthesized into the molecular-dimensioned cavities of $\mid K_6 (Pb _4I_2)(PbI_2) _{0.67}-(H_2O)_2\mid [Si _{12}Al _{12}O _{48}]$-LTA have been determined. A single crystal of $\mid Pb _6\mid [Si _{12}Al _{12}O _{48}]$-LTA, prepared by the dynamic ion-exchange of $\mid Na _{12}\mid [Si _{12}Al _{12}O _{48}]$-LTA with aqueous 0.05 M $Pb _(NO _3)_2$ and washed with deionized water, was placed in a stream of flowing aqueous 0.05 M KI at 294 K for three days. The resulting crystal structure of the product $( \mid K_6 (Pb _4I_2)(PbI_2) _{0.67}(H_2O)_2\mid [Si _{12}Al _{12}O _{48}]$-LTA, a = 12.353(1) $\AA$) was determined at 294 K by single-crystal X-ray diffraction in the space group Pm3 m. It was refined with all measured reflections to the final error index $R_1$ = 0.062 for 623 reflections which $F_o$ > 4$\sigma$($F_o$). 4.67 $Pb ^{2+}$ and six $K^+$ ions per unit cell are found at three crystallographically distinct positions: 3.67 $Pb ^{2+}$ and three $K^+$ ions on the 3-fold axes opposite six-rings in the large cavity, three $K^+$ ions off the plane of the eight-rings, and the remaining one $Pb ^{2+}$ ion lies opposite four-ring in the large cavity. 0.67 $Pb ^{2+}$ ions and 1.34 $I^-$ ions per unit cell are found in the sodalite units, indicating the formation of a $PbI _2$ molecule in 67% of the sodalite units. Each $PbI _2$ (Pb-I = 3.392(7) $\AA$) is held in place by the coordination of its one $Pb ^{2+}$ ion to the zeolite framework (a $Pb ^{2+}$ cation is 0.74 $\AA$ from a six-ring oxygens) and by the coordination of its two $I^-$ ions to $K^+$ ions through six-rings (I-K = 3.63(4) $\AA$). Two additional $I^-$ ions per unit cell are found opposite a four-ring in the large cavity and form $Pb _2K_2I^{5+}$ and $Pb _2K_2I^{3+}$ moieties, respectively, and two water molecules per unit cell are also found on the 3-fold axes in the large cavity.

Electrical and Chemical Properties of ultra thin RT-MOCVD Deposited Ti-doped $Ta_2O_5$

  • Lee, S. J.;H. F. Luan;A. Mao;T. S. Jeon;Lee, C. h.;Y. Senzaki;D. Roberts;D. L. Kwong
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권4호
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    • pp.202-208
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    • 2001
  • In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

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$Fe_{76-x} Cu_1Mo_xSi_14B_9(x=2, 3)$ 초미세 결정합금의 자기적 특성 (Magnetic Properties of Nanocrystalline $Fe_{76-x}Cu_1Mo_xSi_{14}B_9$(x=2,3) Alloys)

  • 피우갑;노태환;김희중;강일구
    • 한국자기학회지
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    • 제1권1호
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    • pp.12-16
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    • 1991
  • F $e_{76-x}$ C $u_{1}$M $o_{x}$S $i_{14}$ $B_{9}$(x=2, 3)비정질합금의 열처리에 따른 자기적특성과 미세구조의 변화에 대해 조사하였다. 이들합금을 500 .deg. C에서 1시간 열처리한 경우, 결정화에 의해 약 20mm의 입경을 갖는 .alpha. -Fe의 초미세결정립 조직으로 변태하였으며, 이때 얻어진 합금의 실효투자율은 8~9*$10^{3}$, 보자력은 3~4A/m정도이었다. 초미세결정합금의 연자기특성을 크게 좌우하는 요소중의 하나가 입경의 크기이며, 우수 한 자성특성을 얻기위해서는 결정립의 미세화가 요구되는 것으로 알려져 있다. 이에 따라 Fe-Cu-Mo-Si-B계 합금의 경우보다 우수한 연자기특성을 얻기 위하여 2단 열처리를 행하였다. 즉, 400 .deg. C에서 1~3시간 저온 열처리 후 500 .deg. C에서 1시간 고온열처리를 하면 입경이 10nm이하로 감소하였으며, 이때 얻어진 합금의 실효투자율은 1.2~ 1.7*$10^{4}$이고 보자력은 ~2A/m이었다. 이와 같은 연자기특성의 향상은 .alpha. -Fe(Si)결정립의 미세화에 따른 평균결정자기이방성 의 감소에 기인하는 것으로 믿어진다.

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스핀코팅법으로 성장 된 F-ZnO 막의 도핑농도와 열처리 온도에 따른 효과 (Effects of Doping Concentrations and Thermal Annealing on F-ZnO thin films Grown by Spin-coating Method)

  • 윤현식;남기웅;박형길;김소아람;임재영
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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    • pp.142-143
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    • 2012
  • ZnO는 전기적, 광학적 특성으로 인해 여러 연구 분야에서 주목을 받고 있으며, F의 도핑농도에 따른 특성을 알아보기 위해 Si 기판 위에 스핀코팅법으로 F-ZnO 막을 성장 시켰다. 도핑 농도와 열처리 온도에 따른 구조적 및 광학적 특성을 조사하기 위해 scanning electron microscopy, X-ray diffraction (XRD), 그리고 photoluminescence (PL)를 이용하였다. PL 측정 결과 도핑농도가 3%일 때, NBE 피크가 가장 큰 세기를 보였으며, 열처리가 증가함에 따라서 피크의 세기가 증가하였다.

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